专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH0749085A CRYOPUMP 失效
公开(公告)号：JPH0749085A
公开(公告)日：1995-02-21
申请号：JP19441793
申请日：1993-08-05
申请人： HITACHI LTD , JAPAN ATOMIC ENERGY RES INST
发明人： SAHO NORIHIDE , ISOKAMI HISASHI , KAMIIDE YASUO , YAMASHITA YASUO , OKUMURA YOSHIKAZU , HANADA MASAYA
IPC分类号： F04B37/08
摘要： PURPOSE:To re-cool a cryopanel after regeneration to a very low temperature in a short time by disposing a pressure means for controlling a saturated pressure of a first refrigerant above the atmospheric pressure in a part of a supply or exhaust system of the first refrigerant when gas to be exhausted, which is caught by a cryopanel, is removed. CONSTITUTION:After separation of the inside of a cryopump from the outside by a shutter 14, a flow rate regulating valve 32 regulates a supply flow rate so as to make a liquid surface inside a liquid helium tank 6 constant. Meanwhile, another flow rate regulating valve 33 controls a discharging flow rate so as to keep a pressure inside the liquid helium tank 6 higher than the atmospheric pressure, thus heating a cryopanel. A valve 35 is opened and a pressure inside the cryopump is decreased by a vacuum pump 16 disposed outside the cryopump. Consequently, a quantity of hydrogen equivalent to a pressure difference between the decreased pressure and a hydrogen saturated pressure at a temperature of the cryopanel is removed from the cryopanel. At this time, a heat intruding quantity due to heat conduction of gas remaining in the cryopump cannot be increased so that a temperature at the cryopanel can be kept at a very low value.

2. 发明专利

JP2001077044A MANUFACTURE OF SILICON CRYSTAL THIN PLATE AND MANUFACTURE OF SUBSTRATE FOR PHOTOELECTRIC CONVERSION ELEMENT 失效
公开(公告)号：JP2001077044A
公开(公告)日：2001-03-23
申请号：JP24725599
申请日：1999-09-01
申请人： JAPAN ATOMIC ENERGY RES INST , NISSIN ELECTRIC CO LTD
发明人： HANADA MASAYA , OKUMURA YOSHIKAZU , MIYAKE KOJI , HAYASHI TSUKASA , OGATA KIYOSHI
IPC分类号： H01L31/04 , H01L21/02 , H01L21/265 , H01L27/12
摘要： PROBLEM TO BE SOLVED: To dispense with a pressing of the surface of an implanted layer during the heating process of the manufacturing method of a silicon crystal thin plate. SOLUTION: This manufacturing method of a silicon crystal thin plate is provided with an implantation process A, wherein hydrogen ions 6 are implanted in a silicon-containing silicon crystal substrate 2 to form an implanted layer 8 in the place of a depth R2 of 8 μm or deeper from the surface of the substrate 2, a heating process (B), wherein after the process (A), the substrate 2 is heated to form pores in the layer 8, and a separation process (C), wherein after the process (B), the upper side of the layer 8 formed in the substrate 2 is separated from the layer 8 to obtain a silicon crystal thin plate 16.

3. 发明专利

JPH07174877A CONTROL METHOD FOR CESIUM INTRODUCING DEVICE 失效
公开(公告)号：JPH07174877A
公开(公告)日：1995-07-14
申请号：JP32070893
申请日：1993-12-21
申请人： JAPAN ATOMIC ENERGY RES INST , TOSHIBA CORP , TOSHIBA SYST TECH KK
发明人： OKUMURA YOSHIKAZU , HANADA MASAYA , SAITO FUSAO , SUZUKI YASUO
IPC分类号： G21B1/11 , G21B1/00
摘要： PURPOSE:To automatically control the feed of cesium into a plasma source when the operating parameters of a negative ion source are changed without stopping the operation of the ion source in introducing cesium. CONSTITUTION:Cesium is added to a negative ion generation chamber by a cesium introducing device connected to a plasma source 11 having the negative ion generation chamber in this negative ion source. The cesium introducing device is constituted of a cesium container 12 storing cesium and a cesium introducing valve 13 provided on an introduction path guided from the cesium container 12 to the negative ion generation chamber. The cesium introducing valve 13 is opened or closed by the control instruction from a control device 21 monitoring the operating parameters of the negative ion source to add cesium to the negative ion generation chamber.

4. 发明专利

JPH0749084A CRYOPUMP 失效
公开(公告)号：JPH0749084A
公开(公告)日：1995-02-21
申请号：JP19441693
申请日：1993-08-05
申请人： HITACHI LTD , JAPAN ATOMIC ENERGY RES INST
发明人： SAHO NORIHIDE , ISOKAMI HISASHI , YAMASHITA YASUO , KAMIIDE YASUO , OKUMURA YOSHIKAZU , HANADA MASAYA
IPC分类号： F04B37/08
摘要： PURPOSE:To realize suitable regenerating operation of a cryopump by providing a shutter a drive means moving between a gas inlet surface of the cryopump and the deep portion thereof, on a back or side portion inside the cryopump. CONSTITUTION:In regenerating a cryopump, electric motors 25, 26 are rotated leftward and rightward, respectively, connecting portions 29, 30 of the tips or rods 27, 28 are moved leftward, and a shutter 14 is pushed leftward, thus closing an opening surface 12. Liquid nitrogen inside a cooling nitrogen tank 11 is supplied via a flexible tube 39 for cooling the shutter 14 even when moving. After the inside of the cryopump is separated from the outside by the shutter 14, supplying of liquid helium to a cryopanel is stopped. Consequently, a temperature at the cryopump is increased so that gas to be exhausted, which is coagulated on the cryopanel, is discharged into the cryopump. At this time, a pressure inside the cryopump becomes higher than an outside pressure. Therefore, the shutter 14 is further uniformly pressed at plural points in the center in the longitudinal direction thereof against a seal ring 38.

5. 发明专利

JPH02230644A NEGATIVE ION SOURCE 失效
公开(公告)号：JPH02230644A
公开(公告)日：1990-09-13
申请号：JP5036289
申请日：1989-03-02
申请人： JAPAN ATOMIC ENERGY RES INST
发明人： OKUMURA YOSHIKAZU , INOUE TAKASHI , HANADA MASAYA
IPC分类号： G21K1/00 , G21K5/04 , H01J27/02 , H01J27/08 , H01J37/08 , H05G2/00 , H05H7/08
摘要： PURPOSE:To control the movement of an electron by a magnetic field, to form a homogeneous magnetic field on a wide range, and to prevent deterioration of the yield efficiency of a negative ion without burying a permanent magnet in an accelerating electrode by generating the magnetic field by means of running current from the outside into the electrode for extracting and accelerating the negative ion. CONSTITUTION:Between a cathode 8 of a negative ion source and a discharge container 9, plasma 3 is formed by arc discharge, in which a negative ion 10 is formed. The negative ion 10 is extracted by an electrostatic field applied between accelerating electrodes 5, 5 by an accelerating power source 11, and is accelerated, running current in the accelerating electrode 5 by an exciting power source 12, so as to generate a magnetic field 6 perpendicular to the vicinity of the electrode. The magnetic field 6 suppresses the movement of an electron 7 in plasma 9, increasing yield efficiency of the negative ion 10, and bend and accelerate a trajectory of the electron 7 which is extracted at the accelerating electrodes 5, 5, and is to be accelerated. As the mass of the negative ion 10 is large, it is preferentially accelerated almost without being restricted by the magnetic field 6, so as to increase acceleration efficiency.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式