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1. 发明授权

US06835508B2 Large-area membrane mask and method for fabricating the mask 有权
标题翻译：大面积膜掩模和掩模制造方法
公开(公告)号：US06835508B2
公开(公告)日：2004-12-28
申请号：US10215227
申请日：2002-08-08
申请人： Jörg Butschke , Albrecht Ehrmann , Ernst Haugeneder , Frank-Michael Kamm , Florian Letzkus , Hans Löschner , Reinhard Springer
发明人： Jörg Butschke , Albrecht Ehrmann , Ernst Haugeneder , Frank-Michael Kamm , Florian Letzkus , Hans Löschner , Reinhard Springer
IPC分类号： G03F900
CPC分类号： G03F1/20 , G03F1/22
摘要： In order to increase the rigidity of a membrane mask that can be used for ion projection lithography, a second wafer made of the material of the membrane layer is provided in addition to a first wafer. The second wafer is patterned in the same way as the first wafer to form a second carrying ring and is fitted on the membrane layer in a mirror-inverted manner with respect to the first wafer so that the membrane area is arranged between the first and second carrying rings in a centered manner in the direction perpendicular to the membrane plane.
摘要翻译：为了提高可用于离子投影光刻的膜掩模的刚性，除了第一晶片之外还提供由膜层材料制成的第二晶片。以与第一晶片相同的方式对第二晶片进行构图，以形成第二承载环，并以相对于第一晶片的镜像反向的方式装配在膜层上，使得膜区域布置在第一和第二晶片之间以垂直于膜平面的方向以中心方式携带环。

2. 发明授权

US06864182B2 Method of producing large-area membrane masks by dry etching 失效
标题翻译：通过干蚀刻生产大面积膜面膜的方法
公开(公告)号：US06864182B2
公开(公告)日：2005-03-08
申请号：US10185631
申请日：2002-06-28
申请人： Jörg Butschke , Albrecht Ehrmann , Karl Kragler , Florian Letzkus , Christian Reuter , Reinhard Springer
发明人： Jörg Butschke , Albrecht Ehrmann , Karl Kragler , Florian Letzkus , Christian Reuter , Reinhard Springer
IPC分类号： G03F1/20 , G03F1/22 , G03F1/80 , H01L21/302
CPC分类号： G03F1/22 , G03F1/20 , G03F1/80 , Y10S438/928 , Y10S438/942
摘要： Based upon an existing or to be produced multi-layered semiconductor-insulator-semiconductor carrier layer wafer (SOI substrate), irregularity of the etching conditions between the center and the edge region occurring during dry etching can be counteracted by a number of alternative steps, in particular, an additional layer construction compensating for the etching irregularity so that in any event an approximately homogeneous etching removal takes place over the entire area of the wafer to be etched.
摘要翻译：基于现有的或将要制造的多层半导体 - 绝缘体 - 半导体载体层晶片（SOI衬底），在干法蚀刻期间发生的中心和边缘区域之间的蚀刻条件的不规则性可以通过若干替代步骤抵消，特别地，补偿蚀刻不规则性的附加层结构，使得在任何情况下，在待蚀刻晶片的整个区域上发生大致均匀的蚀刻去除。

3. 发明授权

US06696371B2 Method for fabricating positionally exact surface-wide membrane masks 有权
标题翻译：用于制造位置精确的表面膜掩模的方法
公开(公告)号：US06696371B2
公开(公告)日：2004-02-24
申请号：US10163007
申请日：2002-06-05
申请人： Joerg Butschke , Albrecht Ehrmann , Ernst Haugeneder , Florian Letzkus , Reinhard Springer
发明人： Joerg Butschke , Albrecht Ehrmann , Ernst Haugeneder , Florian Letzkus , Reinhard Springer
IPC分类号： H01L21302
CPC分类号： G03F1/20 , Y10S438/942
摘要： The membrane mask is based on an SOI substrate. In an existing or subsequently produced multilayer semiconductor/insulator/semiconductor-carrier-layer substrate, the inhomogeneous mechanical stresses in the semiconductor layer, which lead to undesirable distortions, are converted at least partly into a homogenous state prior to the structuring of the semiconductor layer. In order to accomplish this, either an additional layer structure is provided on an existing SOI substrate, or a modified layer structure is provided in the fabrication of the SOI substrate, or both.
摘要翻译：膜掩模基于SOI衬底。在现有的或随后生产的多层半导体/绝缘体/半导体载体层基板中，导致不期望的失真的半导体层中的不均匀机械应力在半导体层的结构化之前至少部分地转变为均匀状态。为了实现这一点，在现有SOI衬底上提供附加层结构，或者在SOI衬底的制造中提供修改层结构，或者两者。

4. 发明授权

US06773854B2 Method of producing a perforated mask for particle radiation 有权
标题翻译：制造用于粒子辐射的穿孔掩模的方法
公开(公告)号：US06773854B2
公开(公告)日：2004-08-10
申请号：US10210011
申请日：2002-07-31
申请人： Albrecht Ehrmann , Ernst Haugeneder , Frank-Michael Kamm , Alexander Petraschenko , Stefan Schunck
发明人： Albrecht Ehrmann , Ernst Haugeneder , Frank-Michael Kamm , Alexander Petraschenko , Stefan Schunck
IPC分类号： G03F900
CPC分类号： G03F1/20 , H01J2237/0453 , H01J2237/3175
摘要： A method for producing a perforated mask for particle radiation includes calculating values of an elasticity of adjacent cells of a mask with respect to longitudinal and shear stresses in a main plane of the mask on a model of the desired pattern of mask openings. For the respective individual cells, length and direction of all the edge sections of the openings and cross-sectional areas of the openings are determined. Therefrom, statistical parameters are derived, which are used as a variable in preselected empirical functions to determine the elasticity values of the cells analytically. By linking the elasticity values determined with deformation forces to be expected, the vector field of a distortion of the mask to be expected is calculated by FE calculation. For cutting the mask openings into a blank, a pattern is selected that represents the desired pattern with a distortion being the inverse of the previously calculated distortion.
摘要翻译：用于制造用于粒子辐射的穿孔掩模的方法包括在掩模开口的所需图案的模型上相对于掩模的主平面中的纵向和剪切应力计算掩模的相邻单元的弹性值。对于各个单元，确定开口的所有边缘部分和开口的横截面积的长度和方向。因此，导出统计参数，其被用作预选经验函数中的变量，以分析细胞的弹性值。通过将通过预期的变形力确定的弹性值相联系，通过FE计算来计算要预期的掩模的失真的矢量场。为了将掩模开口切割成空白，选择表示期望图案的图案，其中失真是先前计算的失真的倒数。

5. 发明授权

US08212991B2 Optical system of a microlithographic projection exposure apparatus 有权
标题翻译：微光刻投影曝光装置的光学系统
公开(公告)号：US08212991B2
公开(公告)日：2012-07-03
申请号：US12628294
申请日：2009-12-01
申请人： Aurelian Dodoc , Albrecht Ehrmann , Sascha Bleidistel
发明人： Aurelian Dodoc , Albrecht Ehrmann , Sascha Bleidistel
IPC分类号： G03B27/42 , G03B27/68 , G03B27/58
CPC分类号： G02B3/12 , G03F7/70341
摘要： An optical system of a microlithographic projection exposure apparatus contains a module, which can be fitted in the optical system and removed from it as a unit. The module contains a cavity which can be completely filled with a liquid and hermetically sealed, and a concavely curved optical surface which bounds the cavity at the top during operation of the projection exposure apparatus. This makes it possible to fill the module outside the optical system. The module can be tilted there so that no air bubble, which prevents complete filling, can form below the concavely curved optical surface.
摘要翻译：微光刻投影曝光装置的光学系统包含可以安装在光学系统中并作为一个单元从其中移除的模块。该模块包含一个可完全充满液体并密封的空腔，以及在投影曝光设备的操作期间界定顶部空腔的凹曲面的光学表面。这使得可以将模块填充到光学系统外部。模块可以在那里倾斜，从而不会形成阻止完全填充的气泡，可以形成在凹曲面的光学表面之下。

6. 发明授权

US07408652B2 Device and method for the optical measurement of an optical system by using an immersion fluid 有权
标题翻译：通过使用浸液进行光学系统的光学测量的装置和方法
公开(公告)号：US07408652B2
公开(公告)日：2008-08-05
申请号：US11080525
申请日：2005-03-16
申请人： Ulrich Wegmann , Uwe Schellhorn , Joachim Stuehler , Helmut Haidner , Albrecht Ehrmann , Martin Schriever , Markus Gobppert
发明人： Ulrich Wegmann , Uwe Schellhorn , Joachim Stuehler , Helmut Haidner , Albrecht Ehrmann , Martin Schriever , Markus Gobppert
IPC分类号： G01B9/02 , G02B27/40
CPC分类号： G03F7/2041 , G03F7/70341 , G03F7/706
摘要： A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.
摘要翻译：提供了一种用于光学系统，特别是光学成像系统的光学测量的装置。该装置包括布置在光学系统的物体侧或像侧上的至少一个测试光学部件。浸没流体与至少一个测试光学部件相邻。还提供了一种用于该装置的容器，配备有该装置的微光投影曝光机以及可借助该装置进行的方法。该装置和方法通过使用具有剪切或点衍射干涉测量的波前检测或莫尔测量技术来提供具有高数值孔径的微光刻投影物镜的光学测量。

7. 发明申请

US20080170217A1 Optical System of a Microlithographic Projection Exposure Apparatus 审中-公开
标题翻译：微光刻投影曝光装置的光学系统
公开(公告)号：US20080170217A1
公开(公告)日：2008-07-17
申请号：US11911899
申请日：2006-05-13
申请人： Aurelian Dodoc , Albrecht Ehrmann , Sascha Bleidistel
发明人： Aurelian Dodoc , Albrecht Ehrmann , Sascha Bleidistel
IPC分类号： G03B27/54
CPC分类号： G02B3/12 , G03F7/70341
摘要： An optical system of a microlithographic projection exposure apparatus (10) contains a module (50; 150), which can be fitted in the optical system and removed from it as a unit. The module contains a cavity (42; 142) which can be completely filled with a liquid (34; 134) and hermetically sealed, and a concavely curved optical surface (S) which bounds the cavity at the top during operation of the projection exposure apparatus (10). This makes it possible to fill the module outside the optical system, The module can be tilted there so that no air bubble, which prevents complete filling, can form below the concavely curved optical surface.
摘要翻译：微光刻投影曝光装置（10）的光学系统包含可以安装在光学系统中并作为一个单元从其中移除的模块（50; 150）。该模块包括可完全充满液体（34; 134）并气密密封的空腔（42; 142）和在投影曝光设备的操作期间界定顶部空腔的凹曲面光学表面（S）（10）。这使得可以将模块填充到光学系统外部。该模块可以在那里倾斜，使得不会在凹曲面光学表面下方形成防止完全填充的气泡。

8. 发明申请

US20070070316A1 MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS AND MEASURING DEVICE FOR A PROJECTION LENS 审中-公开
标题翻译：投影镜头的微观投影曝光装置和测量装置
公开(公告)号：US20070070316A1
公开(公告)日：2007-03-29
申请号：US11458216
申请日：2006-07-18
申请人： Albrecht Ehrmann , Ulrich Wegmann , Rainer Hoch , Joerg Mallmann , Karl-Heinz Schuster , Ulrich Loering , Toralf Gruner , Bernhard Kneer , Bernhard Geuppert , Franz Sorg , Jens Kugler , Norbert Wabra
发明人： Albrecht Ehrmann , Ulrich Wegmann , Rainer Hoch , Joerg Mallmann , Karl-Heinz Schuster , Ulrich Loering , Toralf Gruner , Bernhard Kneer , Bernhard Geuppert , Franz Sorg , Jens Kugler , Norbert Wabra
IPC分类号： G03B27/42
CPC分类号： G03F7/70341 , G03F7/70591 , G03F7/70691 , G03F7/7085 , G03F7/70875 , G03F7/70891 , G03F7/70991
摘要： A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.
摘要翻译：微光刻投影曝光装置包括配置为浸没操作的投影透镜。为此，将浸没液体引入位于图像侧的投影透镜的最后一个透镜与待曝光的感光层之间的浸没空间中。为了减少由浸没液体内发生的温度梯度引起的折射率的波动，投影曝光装置包括加热或冷却浸没液的部分体积的传热元件，以便达到至少基本均匀或至少基本上旋转对称的温度在浸液中的分布。

9. 发明授权

US08120763B2 Device and method for the optical measurement of an optical system by using an immersion fluid 有权
标题翻译：通过使用浸液进行光学系统的光学测量的装置和方法
公开(公告)号：US08120763B2
公开(公告)日：2012-02-21
申请号：US12489639
申请日：2009-06-23
申请人： Ulrich Wegmann , Uwe Schellhorn , Joachim Stuehler , Albrecht Ehrmann , Martin Schriever , Markus Goeppert , Helmut Haidner
发明人： Ulrich Wegmann , Uwe Schellhorn , Joachim Stuehler , Albrecht Ehrmann , Martin Schriever , Markus Goeppert , Helmut Haidner
IPC分类号： G01B9/00 , G01B9/02 , G03B27/42
CPC分类号： G03F7/2041 , G03F7/70341 , G03F7/706
摘要： A device for the optical measurement of an optical system, in particular an optical imaging system, is provided. The device includes at least one test optics component arranged on an object side or an image side of the optical system. An immersion fluid is adjacent to at least one of the test optics components. A container for use in this device, a microlithography projection exposure machine equipped with this device, and a method which can be carried out with the aid of this device are also provided. The device and method provide for optical measurement of microlithography projection objectives with high numerical apertures by using wavefront detection with shearing or point diffraction interferometry, or a Moiré measuring technique.
摘要翻译：提供了一种用于光学系统，特别是光学成像系统的光学测量的装置。该装置包括布置在光学系统的物体侧或像侧上的至少一个测试光学部件。浸没流体与至少一个测试光学部件相邻。还提供了一种用于该装置的容器，配备有该装置的微光投影曝光机以及可借助该装置进行的方法。该装置和方法通过使用具有剪切或点衍射干涉测量的波前检测或莫尔测量技术来提供具有高数值孔径的微光刻投影物镜的光学测量。

10. 发明申请

US20100141912A1 EXPOSURE APPARATUS AND MEASURING DEVICE FOR A PROJECTION LENS 有权
标题翻译：投影镜头的曝光装置和测量装置
公开(公告)号：US20100141912A1
公开(公告)日：2010-06-10
申请号：US12703068
申请日：2010-02-09
申请人： Albrecht Ehrmann , Ulrich Wegmann , Rainer Hoch , Joerg Mallmann , Karl-Heinz Schuster , Ulrich Loering , Toralf Gruner , Bernhard Kneer , Bernhard Geuppert , Franz Sorg , Jens Kugler , Norbert Wabra
发明人： Albrecht Ehrmann , Ulrich Wegmann , Rainer Hoch , Joerg Mallmann , Karl-Heinz Schuster , Ulrich Loering , Toralf Gruner , Bernhard Kneer , Bernhard Geuppert , Franz Sorg , Jens Kugler , Norbert Wabra
IPC分类号： G03B27/52
CPC分类号： G03F7/70341 , G03F7/70591 , G03F7/70691 , G03F7/7085 , G03F7/70875 , G03F7/70891 , G03F7/70991
摘要： A microlithographic projection exposure apparatus includes a projection lens that is configured for immersion operation. For this purpose an immersion liquid is introduced into an immersion space that is located between a last lens of the projection lens on the image side and a photosensitive layer to be exposed. To reduce fluctuations of refractive index resulting from temperature gradients occurring within the immersion liquid, the projection exposure apparatus includes heat transfer elements that heat or cool partial volumes of the immersion liquid so as to achieve an at least substantially homogenous or at least substantially rotationally symmetric temperature distribution within the immersion liquid.
摘要翻译：微光刻投影曝光装置包括配置为浸没操作的投影透镜。为此，将浸没液体引入位于图像侧的投影透镜的最后一个透镜与待曝光的感光层之间的浸没空间中。为了减少由浸没液体内发生的温度梯度引起的折射率的波动，投影曝光装置包括加热或冷却浸没液的部分体积的传热元件，以便达到至少基本均匀或至少基本上旋转对称的温度在浸液中的分布。

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