专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US4551742A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4551742A
公开(公告)日：1985-11-05
申请号：US640570
申请日：1984-08-14
申请人： Iwao Takemoto , Shiya Ohba , Masakazu Aoki , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Masao Tamura , Masanobu Miyao
发明人： Iwao Takemoto , Shiya Ohba , Masakazu Aoki , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Masao Tamura , Masanobu Miyao
IPC分类号： H01L27/14 , H01L27/146 , H01L31/14 , H04N5/335 , H04N5/359 , H04N5/374 , H04N9/07
CPC分类号： H01L27/14654
摘要： A solid-state imaging device is provided with picture elements which are each composed of a photoelectric conversion element and a MOS transistor as a switching element and which are arranged in the form of a matrix. A scanning mechanism sequentially scans the picture elements to sequentially read out photoelectric conversion signals. To eliminate smear and reduce parasitic capacitance, a high-impurity-concentration diffusion layer serving as an output terminal of the MOS transistor constituting the picture element is formed on an insulator layer for isolating the elements.
摘要翻译：固态成像装置具有由光电转换元件和MOS晶体管作为开关元件构成并以矩阵形式配置的像素。扫描机构顺序地扫描像素以顺序地读出光电转换信号。为了消除污迹并降低寄生电容，在用于隔离元件的绝缘体层上形成用作构成像素的MOS晶体管的输出端的高杂质浓度扩散层。

2. 发明授权

US4621291A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4621291A
公开(公告)日：1986-11-04
申请号：US462763
申请日：1983-02-01
申请人： Iwao Takemoto , Shinya Ohba , Masakazu Aoki , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Takuya Imaide
发明人： Iwao Takemoto , Shinya Ohba , Masakazu Aoki , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Takuya Imaide
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/365 , H04N5/372 , H04N5/374 , H04N5/378 , H04N3/14
CPC分类号： H04N3/1568
摘要： This invention relates to an area imaging device having an array of picture elements formed of photodiodes and insulated-gate MOSTs which is vertically scanned by a shift register and horizontally scanned by a charge transfer device (CTD). The solid-state imaging device according to this invention has a transfer MOST provided between a vertical signal output line and a horizontal switch MOST, a resetting MOST connected to the junction between said transfer MOST and the horizontal switch MOST, and a mechanism for setting the vertical signal line at a reference potential just before signal transfer. The transfer MOST connected between the junction of the horizontal switch MOST and the resetting MOST and the vertical signal line is a double-gate MOST formed of a series connection of a transfer gate and another transfer gate. Therefore, the charges under the gate of the transfer MOST can be removed for fixed noise to be greatly reduced.
摘要翻译：本发明涉及一种具有由光电二极管和绝缘栅极MOST形成的像素阵列的区域成像装置，其由移位寄存器垂直扫描并由电荷转移装置（CTD）水平扫描。根据本发明的固态成像装置具有设置在垂直信号输出线和水平开关MOST之间的转移MOST，连接到所述传输MOST和水平开关MOST之间的连接处的复位MOST，以及用于设置在信号传输之前的垂直信号线处于参考电位。连接在水平开关MOST和复位MOST的连接点与垂直信号线之间的传输MOST是由传输门和另一个传输门的串联连接形成的双栅极MOST。因此，为了降低固定噪声，可以去除传输MOST的栅极下的电荷。

3. 发明授权

US4349743A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4349743A
公开(公告)日：1982-09-14
申请号：US206865
申请日：1980-11-14
申请人： Shinya Ohba , Shoji Hanamura , Toshifumi Ozaki , Masaharu Kubo , Masaaki Nakai , Kenji Takahashi , Masakazu Aoki , Iwao Takemoto , Haruhisa Ando , Ryuichi Izawa
发明人： Shinya Ohba , Shoji Hanamura , Toshifumi Ozaki , Masaharu Kubo , Masaaki Nakai , Kenji Takahashi , Masakazu Aoki , Iwao Takemoto , Haruhisa Ando , Ryuichi Izawa
IPC分类号： H01L27/14 , H01L27/146 , H04N3/14 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/372 , H04N5/374 , H04N5/378
CPC分类号： H01L27/14643 , H04N3/1512 , H04N3/1568
摘要： A solid-state imaging device wherein a MOS sensor is employed for a photosensor part, a CTD shift register is employed for a read-out circuit, first and second transfer gates are connected between vertical signal output lines and the CTD, and a reset gate is connected between a juncture of the first and second transfer gates and a reset voltage line. A method is adopted in which signal outputs of a plurality of rows are transferred to the CTD in a horizontal blanking period, and signals of a plurality of rows are simultaneously read out in a horizontal scanning period. At the signal transfer, bias charges are dumped into the vertical signal output lines from the CTD, and mixed charges consisting of the bias charges and signal charges are transferred to the CTD. Thereafter, the signals are read out.
摘要翻译：一种固态成像装置，其中MOS传感器用于光电传感器部分，CTD移位寄存器用于读出电路，第一和第二传输门连接在垂直信号输出线和CTD之间，复位门连接在第一和第二传输门的接合点与复位电压线之间。采用在水平消隐期间将多行的信号输出传送到CTD的方法，并且在水平扫描期间同时读出多行的信号。在信号传输中，偏置电荷从CTD倾倒到垂直信号输出线路中，由偏置电荷和信号电荷组成的混合电荷转移到CTD。此后，读出信号。

4. 发明授权

US4532549A Solid-state imaging device with high quasi-signal sweep-out efficiency and high signal charge transfer efficiency 失效
标题翻译：具有高准信号扫频效率和高信号电荷转移效率的固态成像装置
公开(公告)号：US4532549A
公开(公告)日：1985-07-30
申请号：US473865
申请日：1983-03-10
申请人： Toshifumi Ozaki , Shinya Ohba , Iwao Takemoto , Masaaki Nakai , Haruhisa Ando , Shusaku Nagahara , Takuya Imaide , Kenji Takahashi , Toshiyuki Akiyama
发明人： Toshifumi Ozaki , Shinya Ohba , Iwao Takemoto , Masaaki Nakai , Haruhisa Ando , Shusaku Nagahara , Takuya Imaide , Kenji Takahashi , Toshiyuki Akiyama
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/378 , H04N5/30
CPC分类号： H01L27/14643
摘要： Disclosed is a solid-state imaging device wherein optical information of a number of photo-electric conversion elements arranged in a matrix is read into vertical signal lines by a vertical shift register and then the optical information on the vertical signal lines is horizontally scanned by a horizontal register of a charge transfer device. Bias charge storage means and quasi-signal sweep-out drains are disposed between the horizontal register and the vertical signal lines, and a bias charge input means is arranged in the horizontal register. In order to ensure high efficiency in transferring signals between the vertical lines to the storage means, the sweep-out drains and the charge transfer device, it is arranged for bias charges to be provided at each stage of transfer. Thus, bias charges supplied from the storage means are used to transfer charges from the vertical lines to the storage means. Similarly bias charges directly injected from the quasi-signal sweep-out drains are used to sweep out quasi-signals from the storage means to the quasi-signal sweep-out drains. Finally bias charges supplied from the bias charge input means of the charge transfer device are used to read signals from the storage means into the charge transfer device. By virtue of this, the sweep-out efficiency of the quasi-signals from the capacitances which supply the bias charges and a read-out efficiency of the signal charges are enhanced and a high quality of video signal is produced.
摘要翻译：公开了一种固态成像装置，其中以矩阵形式布置的多个光电转换元件的光学信息被垂直移位寄存器读入垂直信号线，然后垂直信号线上的光信息被水平扫描电荷转移装置的水平寄存器。偏置电荷存储装置和准信号扫除漏极设置在水平寄存器和垂直信号线之间，偏置电荷输入装置布置在水平寄存器中。为了确保在垂直线之间向存储装置，扫除漏极和电荷转移装置传输信号的高效率，布置为在每个转移阶段提供偏置电荷。因此，使用从存储装置提供的偏置电荷将电荷从垂直线传送到存储装置。类似地，从准信号扫除漏极直接注入的偏置电荷用于将准信号从存储装置扫除到准信号扫除漏极。最后，从电荷转移装置的偏置电荷输入装置提供的偏置电荷用于从存储装置读取信号到电荷转移装置中。由此，来自提供偏置电荷的电容的准信号的扫除效率和信号电荷的读出效率被增强，并且产生高质量的视频信号。

5. 发明授权

US4577231A High sensitivity solid-state imaging device 失效
标题翻译：高灵敏度固态成像装置
公开(公告)号：US4577231A
公开(公告)日：1986-03-18
申请号：US476415
申请日：1983-03-17
申请人： Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Koichi Seki , Kenji Takahashi , Toshiyuki Akiyama , Iwao Takemoto , Takuya Imaide , Akihide Okuda , Masaharu Kubo
发明人： Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Toshifumi Ozaki , Koichi Seki , Kenji Takahashi , Toshiyuki Akiyama , Iwao Takemoto , Takuya Imaide , Akihide Okuda , Masaharu Kubo
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/359 , H04N5/365 , H04N5/372 , H04N3/14
CPC分类号： H04N3/1512 , H01L27/14643
摘要： Disclosed is a two-dimensionally arrayed solid-state imaging device for a television camera having a photodiode array arranged at a photo-sensing section and a readout horizontal register constructed by a charge transfer device (CTD) such as a BCD, CCD or BBD. An inverter circuit is provided for each of the vertical signal lines. An input of the inverter circuit is connected to a vertical signal line drain of at least one transfer transistor arranged between the vertical signal line and the CTD, and an output of the inverter circuit is connected to a gate of the transfer transistor. Transfer efficiency is improved by the insertion of the inverter circuit and fixed pattern noise is substantially reduced by supplying bias currents.
摘要翻译：公开了一种用于电视摄像机的二维阵列固态成像装置，其具有布置在感光部分的光电二极管阵列和由诸如BCD，CCD或BBD的电荷转移装置（CTD）构成的读出水平寄存器。为每条垂直信号线提供一个反相器电路。逆变器电路的输入端连接在布置在垂直信号线和CTD之间的至少一个传输晶体管的垂直信号线漏极，反相器电路的输出端连接到转移晶体管的栅极。通过插入逆变器电路来提高转移效率，并且通过提供偏置电流大大减少固定图案噪声。

6. 发明授权

US4295055A Circuit for generating scanning pulses 失效
标题翻译：用于产生扫描脉冲的电路
公开(公告)号：US4295055A
公开(公告)日：1981-10-13
申请号：US46028
申请日：1979-06-06
申请人： Iwao Takemoto , Norio Koike , Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Syoji Hanamura , Ryuichi Izawa , Masaharu Kubo , Masakazu Aoki , Shuhei Tanaka
发明人： Iwao Takemoto , Norio Koike , Shinya Ohba , Haruhisa Ando , Masaaki Nakai , Syoji Hanamura , Ryuichi Izawa , Masaharu Kubo , Masakazu Aoki , Shuhei Tanaka
IPC分类号： G11C19/00 , G11C19/18 , G11C19/28 , H01L27/146 , H01L31/10 , H03K5/15 , H04N3/14
CPC分类号： H03K5/15093 , G11C19/184 , G11C19/28
摘要： A circuit for generating scanning pulses comprising a plurality of stages of basic circuits connected in series, said each basic circuit comprising first, second and third insulated gate field-effect transistors (MISTs) each of which has first and second terminals each being either of source and drain terminals and a gate terminal, said first terminal of said first MIST being used as a clock pulse-applying terminal, said gate terminal of said first MIST being used as an input terminal, said second terminal of said first MIST and said first terminal and said gate terminal of said second MIST being connected and used as a scanning pulse output terminal, said second terminal of said second MIST and said first terminal of said third MIST being connected and used as an output terminal, said second terminal of said third MIST being used as a ground terminal, said gate terminal of said third MIST being used as a feedback input terminal.
摘要翻译：一种用于产生扫描脉冲的电路，包括串联连接的多级基本电路，所述每个基本电路包括第一，第二和第三绝缘栅极场效应晶体管（MIST），每个绝缘栅场效应晶体管的第一和第二端子均为源极所述第一MIST的所述第一端子用作时钟脉冲施加端子，所述第一MIST的所述栅极端子用作输入端子，所述第一MIST的所述第二端子和所述第一端子的所述第一端子并且所述第二MIST的所述栅极端子被连接并用作扫描脉冲输出端子，所述第二MIST的所述第二端子和所述第三MIST的所述第一端子被连接并用作输出端子，所述第三MIST的所述第二端子被用作接地端子，所述第三MIST的所述栅极端子用作反馈输入端子。

7. 发明授权

US4599133A Method of producing single-crystal silicon film 失效
标题翻译：制造单晶硅膜的方法
公开(公告)号：US4599133A
公开(公告)日：1986-07-08
申请号：US491544
申请日：1983-05-04
申请人： Masanobu Miyao , Makoto Ohkura , Iwao Takemoto , Masao Tamura
发明人： Masanobu Miyao , Makoto Ohkura , Iwao Takemoto , Masao Tamura
IPC分类号： C01B33/02 , C30B1/02 , C30B11/00 , C30B13/34 , C30B29/06 , H01L21/208 , H01L21/31 , C30B13/24
CPC分类号： C30B13/34 , C30B11/003 , Y10S117/904 , Y10S117/905
摘要： On a semiconductor substrate surface, a plurality of polycrystalline or amorphous silicon films and a plurality of insulator films which are substantially transparent to an irradiating energy beam and each of which has an opening are formed so as to be alternately stacked. Thereafter, the plurality of polycrystalline or amorphous silicon films are turned into a single crystal by irradiating them with the energy beam.
摘要翻译：在半导体衬底表面上形成多个多晶或非晶硅膜以及对照射能量束基本透明并且每个具有开口的多个绝缘膜，以便交替堆叠。此后，通过用能量束照射多个多晶或非晶硅膜将其变成单晶。

8. 发明授权

US4267469A Solid-state imaging device having a clamping circuit for drawing out excess charge 失效
标题翻译：具有用于抽出多余电荷的钳位电路的固态成像装置
公开(公告)号：US4267469A
公开(公告)日：1981-05-12
申请号：US066880
申请日：1979-08-16
申请人： Shinya Ohba , Iwao Takemoto , Masaaki Nakai , Haruhisa Ando , Masaharu Kubo
发明人： Shinya Ohba , Iwao Takemoto , Masaaki Nakai , Haruhisa Ando , Masaharu Kubo
IPC分类号： H01L27/146 , H03K3/42 , H01L27/14 , H01L29/78 , H01L31/00
CPC分类号： H04N5/335 , H01L27/14654 , H04N5/3591
摘要： In a solid-state imaging device having on an identical semiconductor substrate a plurality of photodiodes which are arrayed in two dimensions, vertical and horizontal switching MOSFETs which select the positions of the photodiodes, and vertical and horizontal scanning circuits which provide scanning pulses for controlling the operations of the vertical and horizontal switching MOSFETs; the improvement therein comprising a clamping circuit which is made up of a diode, a MOSFET or the like and which is disposed between the photodiode and a vertical scanning line of the succeeding stage, so that excess charges overflowing the photodiode are drawn out from the vertical scanning line through the clamping circuit, whereby the blooming can be prevented.
摘要翻译：在具有相同半导体衬底的固态成像器件中，排列有二维排列的多个光电二极管，选择光电二极管的位置的垂直和水平开关MOSFET以及提供扫描脉冲的垂直和水平扫描电路，用于控制垂直和水平开关MOSFET的工作; 其改进在于包括由二极管，MOSFET等组成并且设置在光电二极管和后级的垂直扫描线之间的钳位电路，使得溢出光电二极管的过量电荷从垂直线扫描线通过钳位电路，从而可以防止起霜。

9. 发明授权

US4413283A Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US4413283A
公开(公告)日：1983-11-01
申请号：US332933
申请日：1981-12-21
申请人： Masakazu Aoki , Haruhisa Ando , Shinya Ohba , Iwao Takemoto
发明人： Masakazu Aoki , Haruhisa Ando , Shinya Ohba , Iwao Takemoto
IPC分类号： H04N9/07 , H04N9/04 , H04N3/14
CPC分类号： H04N9/045 , H04N3/1512
摘要： A solid-state imaging device comprises a plurality of photodiodes arranged in a matrix form in the same semiconductor substrate, horizontal and vertical switching elements for selecting the photodiodes, horizontal and vertical shift registers for supplying scan pulses to the horizontal and vertical switching elements, and an interlace circuit for simultaneously selecting two vertical gate lines to simultaneously read two picture element rows. A buffer circuit is inserted between the interlace circuit and the vertical gate lines for changing a potential level of one of the two selected vertical gate lines from a high level to a low level prior to changing the potential level of the other vertical gate line.
摘要翻译：固态成像装置包括在同一半导体衬底中以矩阵形式布置的多个光电二极管，用于选择光电二极管的水平和垂直开关元件，用于向水平和垂直开关元件提供扫描脉冲的水平和垂直移位寄存器，以及用于同时选择两条垂直栅极线以同时读取两个像素行的隔行电路。在隔行电路和垂直栅极线之间插入缓冲电路，用于在改变另一垂直栅极线的电位电平之前将两个所选择的垂直栅极线之一的电位电平从高电平改变为低电平。

10. 发明授权

US4392158A Interlaced solid-state imaging device 失效
标题翻译：隔行固态成像装置
公开(公告)号：US4392158A
公开(公告)日：1983-07-05
申请号：US257461
申请日：1981-04-24
申请人： Masakazu Aoki , Haruhisa Ando , Shinya Ohba , Shoji Hanamura , Iwao Takemoto , Ryuichi Izawa
发明人： Masakazu Aoki , Haruhisa Ando , Shinya Ohba , Shoji Hanamura , Iwao Takemoto , Ryuichi Izawa
IPC分类号： H01L27/146 , H04N5/335 , H04N5/341 , H04N5/355 , H04N5/359 , H04N5/374 , H04N3/14
CPC分类号： H04N3/1512 , H01L27/14643
摘要： In a solid-state imaging device having a plurality of photodiodes which are arrayed in two dimensions on an identical semiconductor body, a group of horizontal switching elements and a group of vertical switching elements which pick up the photodiodes, and a horizontal scanning circuit and a vertical scanning circuit which impress scanning pulses on the horizontal and vertical switching elements respectively, and having an interlaced scanning mechanism which picks up a plurality of vertical scanning lines by means of interlace switching elements so as to permit horizontal scanning of scanning lines of a plurality of rows; a solid-state imaging device characterized in that said interlaced scanning mechanism includes insulated-gate field effect transistors for recovering voltage levels of the scanning pulses having undergone voltage drops due to the interlace switching elements.
摘要翻译：在具有在相同的半导体主体上二维排列的多个光电二极管的固态成像装置中，一组水平切换元件和一组拾取光电二极管的垂直开关元件，以及水平扫描电路和垂直扫描电路，其分别在水平和垂直开关元件上施加扫描脉冲，并且具有隔行扫描机构，其通过隔行扫描开关元件拾取多条垂直扫描线，以允许水平扫描多条扫描线的扫描线行一种固态成像装置，其特征在于，所述隔行扫描机构包括绝缘栅场效应晶体管，用于恢复由于交错开关元件而经历电压降的扫描脉冲的电压电平。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式