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US07667236B2 Optimized contact design for thermosonic bonding of flip-chip devices 有权
标题翻译：优化的倒装芯片器件热键合接触设计
公开(公告)号：US07667236B2
公开(公告)日：2010-02-23
申请号：US10588473
申请日：2004-12-22
申请人： Ivan Eliashevich , Hari Venugopalan , Xiang Gao , Michael J. Sackrison
发明人： Ivan Eliashevich , Hari Venugopalan , Xiang Gao , Michael J. Sackrison
IPC分类号： H01L27/15
CPC分类号： H01L33/382 , H01L33/20 , H01L33/62 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01079 , H01L2924/12041 , H01L2224/05599
摘要： A light emitting device (A) includes a semiconductor die (100). The semiconductor die includes: an epitaxial structure (120) arranged on a substrate (160), the epitaxial structure forming an active light generating region (140) between a first layer (120n) on a first side of the active region and having a first conductivity type, and a second layer (120p) on a second side of the active region and having a second conductivity type, the second side of the active region being opposite the first side of the active region and the second conductivity type being different that the first conductivity type; a first contact (180n) in operative electrical communication with the active region via the first layer in the epitaxial structure, the first contact being arranged on a side of the epitaxial structure opposite the substrate; a second contact (180p) in operative electrical communication with the active region via the second layer in the epitaxial structure, the second contact being arranged on a side of the epitaxial structure opposite the substrate; a first contact trace corresponding to the first contact and defined at a surface thereof distal from the substrate, the first trace including at least one area designated for bonding (320n); and, a second contact trace corresponding the second contact and defined at a surface thereof distal from the substrate, the second trace including at least one area (320p) designated for bonding. Suitably, the first contact trace is substantially enclosed within the second contact trace.
摘要翻译：发光器件（A）包括半导体管芯（100）。所述半导体管芯包括：布置在衬底（160）上的外延结构（120），所述外延结构在所述有源区的第一侧上的第一层（120n）之间形成有源光产生区（140），并且具有第一导电类型和在有源区的第二侧上的第二层（120p），并具有第二导电类型，有源区的第二面与有源区的第一侧相反，第二导电类型不同于第一导电类型; 通过外延结构中的第一层与有源区域电连通的第一接触（180n），第一接触件布置在与衬底相对的外延结构的一侧上; 通过外延结构中的第二层与有源区域电连通的第二触点（180p），第二触点布置在与衬底相对的外延结构的一侧上; 第一接触迹线对应于第一接触并限定在其远离基底的表面，第一迹线包括指定用于接合的至少一个区域（320n）; 以及对应于所述第二接触并限定在其远离所述衬底的表面的第二接触迹线，所述第二迹线包括指定用于接合的至少一个区域（320p）。适当地，第一接触迹线基本上封闭在第二接触迹线内。

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