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1. 发明授权

US08981482B2 ESD protection structure 有权
标题翻译： ESD保护结构
公开(公告)号：US08981482B2
公开(公告)日：2015-03-17
申请号：US13241079
申请日：2011-09-22
申请人： Xiang Gao
发明人： Xiang Gao
IPC分类号： H01L29/772 , H01L27/02 , H01L29/08 , H01L29/10 , H01L29/74 , H01L29/06 , H01L29/749 , H01L29/78
CPC分类号： H01L27/027 , H01L29/0649 , H01L29/0834 , H01L29/1016 , H01L29/7436 , H01L29/749 , H01L29/7835
摘要： A device used as an ESD protection structure, which is a modified N-type LDMOS device is disclosed. A conventional LDMOS includes only one N-type heavily doped region as a drain in an N-type lightly doped region (11), while the device of the invention includes a P-type heavily doped region (22) in an N-type lightly doped region (11), dividing the N-type heavily doped region into two N-type heavily doped regions (21, 23) unconnected and independent to each other. The N-type heavily doped region (21) close to the gate (14) has no picking-up terminal. The N-type heavily doped region (23) away from the gate (14) together with the P-type heavily doped region (22) is picked up and connected to an input/output bonding pad.
摘要翻译：公开了一种用作ESD保护结构的器件，其是修改的N型LDMOS器件。常规LDMOS在N型轻掺杂区域（11）中仅包括一个N型重掺杂区域作为漏极，而本发明的器件包括N型轻掺杂区域中的P型重掺杂区域（22）掺杂区域（11），将N型重掺杂区域划分成彼此不连接和独立的两个N型重掺杂区域（21,23）。接近栅极（14）的N型重掺杂区域（21）没有拾取端子。与P型重掺杂区域（22）一起离开栅极（14）的N型重掺杂区域（23）被拾取并连接到输入/输出接合焊盘。

2. 发明授权

US08838053B2 Frequency multiplication using self-mixing 有权
标题翻译：使用自动混频进行倍频
公开(公告)号：US08838053B2
公开(公告)日：2014-09-16
申请号：US13449468
申请日：2012-04-18
申请人： Li Lin , Xiang Gao , Chi-Hung Lin
发明人： Li Lin , Xiang Gao , Chi-Hung Lin
IPC分类号： H04B1/18 , H03B19/00
CPC分类号： H03B19/00
摘要： Frequency multipliers having corresponding methods and multifunction radios comprise: N multipliers, wherein N is an integer greater than one; wherein the multipliers are connected in series such that each of the multipliers, except for a first one of the multipliers, is configured to mix a periodic input signal with an output of another respective one of the multipliers; wherein the first one of the multipliers is configured to mix the periodic input signal with the periodic input signal.
摘要翻译：具有相应方法和多功能无线电的频率乘法器包括：N个乘法器，其中N是大于1的整数; 其中所述乘法器串联连接，使得除所述乘法器中的第一乘法器之外的每个乘法器被配置为将周期性输入信号与所述乘法器中的另一相应乘法器的输出混合; 其中所述乘法器中的所述第一乘法器被配置为将所述周期性输入信号与所述周期性输入信号混合。

3. 发明申请

US20130006539A1 MEASUREMENT OF COMPOSITION FOR THIN FILMS 有权
标题翻译：薄膜组合物的测定
公开(公告)号：US20130006539A1
公开(公告)日：2013-01-03
申请号：US13524053
申请日：2012-06-15
申请人： Ming Di , Torsten R. Kaack , Qiang Zhao , Xiang Gao , Leonid Poslavsky
发明人： Ming Di , Torsten R. Kaack , Qiang Zhao , Xiang Gao , Leonid Poslavsky
IPC分类号： G06F19/00 , G01J3/02
CPC分类号： G01N21/211 , G01N21/8422 , G01N2021/213
摘要： The present invention includes generating a three-dimensional design of experiment (DOE) for a plurality of semiconductor wafers, a first dimension of the DOE being a relative amount of a first component of the thin film, a second dimension of the DOE being a relative amount of a second component of the thin film, a third dimension of the DOE being a thickness of the thin film, acquiring a spectrum for each of the wafers, generating a set of optical dispersion data by extracting a real component (n) and an imaginary component (k) of the complex index of refraction for each of the acquired spectrum, identifying one or more systematic features of the set of optical dispersion data; and generating a multi-component Bruggeman effective medium approximation (BEMA) model utilizing the identified one or more systematic features of the set of optical dispersion data.
摘要翻译：本发明包括生成多个半导体晶片的实验（DOE）的三维设计，DOE的第一维度是薄膜的第一分量的相对量，DOE的第二维度是相对的量的第二分量，DOE的第三维度是薄膜的厚度，获取每个晶片的光谱，通过提取实数分量（n）和产生一组光散射数据用于识别所述光学色散数据集合中的一个或多个系统特征的每个所获取的光谱的复折射率的虚分量（k）; 以及使用所述一组或多个光学色散数据的一个或多个系统特征来生成多分量Bruggeman有效中等近似（BEMA）模型。

4. 发明申请

US20120154003A1 SPUR REDUCTION TECHNIQUE FOR SAMPLING PLL'S 有权
标题翻译：用于采样PLL的减少技术
公开(公告)号：US20120154003A1
公开(公告)日：2012-06-21
申请号：US12973353
申请日：2010-12-20
申请人： Xiang Gao , Ahmad Bahai , Mounir Bohsali , Ali Djabbari , Eric Klumperink , Bram Nauta , Gerard Socci
发明人： Xiang Gao , Ahmad Bahai , Mounir Bohsali , Ali Djabbari , Eric Klumperink , Bram Nauta , Gerard Socci
IPC分类号： H03L7/091
CPC分类号： H03L7/091 , H03L7/07 , H03L7/0802 , H03L7/0812
摘要： Control circuitry and method of controlling for a sampling phase lock loop (PLL). By controlling the duty cycle of a sampling control signal, in accordance with the PLL reference and output signals, spurious output signals from the sampling PLL being controlled can be reduced.
摘要翻译：控制电路和控制采样锁相环（PLL）的方法。通过控制采样控制信号的占空比，根据PLL参考和输出信号，可以减少来自被控制的采样PLL的杂散输出信号。

5. 发明申请

US20110278644A1 GROUP III-NITRIDE ENHANCEMENT MODE FIELD EFFECT DEVICES AND FABRICATION METHODS 有权
标题翻译：第III类氮化物增强模式场效应器件和制造方法
公开(公告)号：US20110278644A1
公开(公告)日：2011-11-17
申请号：US12778011
申请日：2010-05-11
申请人： Xiang Gao , Shiping Guo
发明人： Xiang Gao , Shiping Guo
IPC分类号： H01L29/778 , H01L21/335
CPC分类号： H01L29/7786 , H01L29/0891 , H01L29/2003 , H01L29/42316 , H01L29/66462
摘要： Structures and fabrication processes are described for group III-nitride enhancement mode field effect devices in which a two-dimensional electron gas is present at or near the interface between a pair of active layers that include a group III-nitride barrier layer and a group III-nitride semiconductor layer. The barrier layer has a band gap wider than the band gap of the adjacent underlying semiconductor layer. The two-dimensional electron gas is induced by providing one or more layers disposed over the barrier layer. A gate electrode is in direct contact with the barrier layer. Ohmic contacts for source and drain electrodes are in direct contact either with the barrier layer or with a semiconductor nitride layer disposed over the barrier layer.
摘要翻译：对于III族氮化物增强型场效应器件描述了结构和制造工艺，其中在包括III族氮化物阻挡层和III族氮化物阻挡层的一对有源层之间的界面处或附近存在二维电子气氮化物半导体层。阻挡层具有比相邻的下层半导体层的带隙宽的带隙。通过提供设置在阻挡层上方的一个或多个层来诱导二维电子气。栅电极与阻挡层直接接触。用于源电极和漏电极的欧姆接触件与阻挡层或设置在阻挡层上的半导体氮化物层直接接触。

6. 发明授权

US08022495B2 PIN diode structure with zinc diffusion region 失效
标题翻译： PIN二极管结构与锌扩散区
公开(公告)号：US08022495B2
公开(公告)日：2011-09-20
申请号：US12420213
申请日：2009-04-08
申请人： Xiang Gao , Alex Ceruzzi , Linlin Liu , Stephen Schwed
发明人： Xiang Gao , Alex Ceruzzi , Linlin Liu , Stephen Schwed
IPC分类号： H01L31/06
CPC分类号： H01L31/105
摘要： A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, and a first type window layer disposed over the intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer is disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.
摘要翻译： PIN光电二极管，其具有基板，设置在基板上的第一类型电极层，设置在第一类型电极层的一部分上的第一本征材料层，以及设置在本征层上的第一类型窗口层。本征材料的岛状区域设置在窗口层上方，并且电介质层设置在岛状区域和至少所述岛状区域的周边部分上，从而在岛状区域中形成开口。掺杂剂通过开口扩散，以便形成延伸到本征材料的第一层中的PN结。

7. 发明申请

US20100181584A1 LASER LIFT-OFF WITH IMPROVED LIGHT EXTRACTION 审中-公开
标题翻译：激光提升与改进的光提取
公开(公告)号：US20100181584A1
公开(公告)日：2010-07-22
申请号：US12304533
申请日：2006-07-11
申请人： Xiang Gao , Hari S. Venugopalan , Michael Sackrison , Ivan Eliashevich
发明人： Xiang Gao , Hari S. Venugopalan , Michael Sackrison , Ivan Eliashevich
IPC分类号： H01L33/00 , H01L31/00
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/62 , H01L33/64 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.
摘要翻译：发光器件包括限定发光pn结的半导体层的叠层和设置在半导体层堆叠上的电介质层。电介质层的折射率基本上与半导体层叠层的折射率相匹配。电介质层具有远离半导体层堆叠的主表面。远端主表面包括图案化，粗糙化或纹理化，其被配置为促进在半导体层堆叠中产生的光的提取。

8. 发明申请

US20100178699A1 MULTI-CHAIN LIPOPHILIC POLYAMINES 有权
标题翻译：多链多糖聚酰胺
公开(公告)号：US20100178699A1
公开(公告)日：2010-07-15
申请号：US12597858
申请日：2008-04-30
申请人： Xiang Gao , Nianke Wang
发明人： Xiang Gao , Nianke Wang
IPC分类号： C12N5/02 , C07C211/13 , C07C237/04
CPC分类号： C07C237/06 , A61K9/1272 , C07C211/21 , C07C217/28 , C12N15/88
摘要： There are provided multi-chain lipophilic polyamine compounds and derivatives thereof, pharmaceutical formulations comprising the same, method of making and using said compounds or formulations.
摘要翻译：提供了多链亲脂性多胺化合物及其衍生物，包含其的药物制剂，制备和使用所述化合物或制剂的方法。

9. 发明授权

US07439599B2 PIN photodiode structure and fabrication process for reducing dielectric delamination 有权
标题翻译： PIN光电二极管结构和减少介电分层的制造工艺
公开(公告)号：US07439599B2
公开(公告)日：2008-10-21
申请号：US11079708
申请日：2005-03-14
申请人： Xiang Gao , Alex Ceruzzi , Steve Schwed , Linlin Liu , Mark Gottfried
发明人： Xiang Gao , Alex Ceruzzi , Steve Schwed , Linlin Liu , Mark Gottfried
IPC分类号： H01L31/00
CPC分类号： H01L31/02161 , H01L31/105
摘要： A PIN photodiode, and a method of manufacturing a PIN photodiode that reduces dielectric delamination and increases device reliability. The process proceeds by forming an first type electrode layer on the substrate; forming an intrinsic layer of the first type electrode layer; forming a second type electrode layer on the intrinsic layer; etching the second type electrode layer to define a mesa shaped structure; and depositing a passivation material over the mesa shaped structure.
摘要翻译： PIN光电二极管，以及制造PIN光电二极管的方法，该光电二极管减少了介质分层并提高了器件的可靠性该工艺通过在衬底上形成第一类型电极层而进行; 形成第一类型电极层的本征层; 在本征层上形成第二类型的电极层; 蚀刻第二类型电极层以限定台面形结构; 以及在所述台面形结构上沉积钝化材料。

10. 发明申请

US20080121902A1 Small footprint high power light emitting package with plurality of light emitting diode chips 审中-公开
标题翻译：具有多个发光二极管芯片的小尺寸大功率发光封装
公开(公告)号：US20080121902A1
公开(公告)日：2008-05-29
申请号：US11517053
申请日：2006-09-07
申请人： Michael Sackrison , Xiang Gao , Srinath K. Aanegola , Hari S. Venugopalan
发明人： Michael Sackrison , Xiang Gao , Srinath K. Aanegola , Hari S. Venugopalan
IPC分类号： H01L33/00
CPC分类号： H01L25/0756 , H01L25/0753 , H01L33/0079 , H01L2924/0002 , H01L2924/00
摘要： A light emitting package includes a support (12, 112, 212) defining a support surface (14). A first light emitting diode chip (20, 120, 220) is secured to the supporting surface and is configured to emit light having a first spectral distribution. A second light emitting diode chip (22, 122, 123, 222) is secured to the first light emitting diode chip. The second light emitting diode chip is configured to emit light having a second spectral distribution different from the first spectral distribution. Optionally, a third light emitting diode chip (223) is disposed on the second light emitting diode chip (222).
摘要翻译：发光包装包括限定支撑表面（14）的支撑件（12,112,212）。第一发光二极管芯片（20,120,220）固定到支撑表面并且被配置为发射具有第一光谱分布的光。第二发光二极管芯片（22,122,123,222）固定到第一发光二极管芯片。第二发光二极管芯片被配置为发射具有与第一光谱分布不同的第二光谱分布的光。可选地，第三发光二极管芯片（223）设置在第二发光二极管芯片（222）上。

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