专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060033098A1 Organic semiconductor devices having low contact resistance 失效
标题翻译：具有低接触电阻的有机半导体器件
公开(公告)号：US20060033098A1
公开(公告)日：2006-02-16
申请号：US10914676
申请日：2004-08-10
申请人： Ishiang Shih , Yi Chen , Chunong Qiu , Cindy Qiu , Steven Xiao
发明人： Ishiang Shih , Yi Chen , Chunong Qiu , Cindy Qiu , Steven Xiao
IPC分类号： H01L35/24
CPC分类号： H01L51/105 , H01L51/0021 , H01L51/0541 , H01L51/0545 , Y02E10/549
摘要： Organic semiconductor-based devices such as thin film transistors, organic light emitting devices and solar cells have potential in low cost electronic and optoelectronic applications. The performance of these organic semiconductor-based devices is often limited by the large resistance between the organic semiconductors and counter electrodes. This invention provides device structures and methods to reduce the unwanted resistance.
摘要翻译：有机半导体器件如薄膜晶体管，有机发光器件和太阳能电池具有低成本电子和光电子应用的潜力。这些基于有机半导体的器件的性能通常受到有机半导体和对电极之间的大电阻的限制。本发明提供了减少不需要的电阻的器件结构和方法。

2. 发明申请

US20050275038A1 Indium oxide-based thin film transistors and circuits 有权
标题翻译：氧化铟基薄膜晶体管和电路
公开(公告)号：US20050275038A1
公开(公告)日：2005-12-15
申请号：US10866267
申请日：2004-06-14
申请人： Yi-Chi Shih , Cindy Qiu , Ishiang Shih , Chunong Qiu
发明人： Yi-Chi Shih , Cindy Qiu , Ishiang Shih , Chunong Qiu
IPC分类号： H01L29/76 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/78633 , H01L29/78645 , H01L29/78648
摘要： In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.
摘要翻译：在电子显示器或成像单元中，通过晶体管阵列来实现像素的控制。这些晶体管是薄膜形式并且被布置成二维配置以形成开关电路，驱动电路或甚至读出电路。在本发明中，提供了具有氧化铟基沟道层的薄膜晶体管和电路。这些薄膜晶体管和电路可以在各种基板上的低温下制造，并具有高电荷载流子迁移率。除了传统的刚性衬底之外，本发明的薄膜晶体管和电路特别适用于用于电子显示和成像应用的柔性和透明衬底上的制造。提供了制造具有基于氧化铟的通道的薄膜晶体管的方法。

3. 发明申请

US20050046523A1 Tunable photonic band gap structures for microwave signals 有权
标题翻译：微波信号的可调光子带隙结构
公开(公告)号：US20050046523A1
公开(公告)日：2005-03-03
申请号：US10652460
申请日：2003-09-02
申请人： Jay Wu , Chunong Qiu , Cindy Qiu , Ishiang Shih
发明人： Jay Wu , Chunong Qiu , Cindy Qiu , Ishiang Shih
IPC分类号： H01P1/20 , H01P1/203
CPC分类号： H01P1/2039 , H01P1/2005
摘要： Photonic Band Gap (PBG) structures are utilized in microwave components as filters to suppress unwanted signals because they have the ability to produce a bandstop effect at certain frequency range depending on the structural dimensions. The unique property of PBG structures is due to the periodic change of the dielectric permittivity so interferences are created with the traveling electromagnetic waves. Such periodic arrangement could exist either inside of the dielectric substrate or in the ground plane of a microstrip transmission line structure. This invention provides tunable or switchable planar PBG structures, which contains lattice pattern of periodic perforations inside of the ground plane. The tuning or switching of the bandstop characteristics is achieved by depositing a conducting island surrounded by a layer of controllable thin film with variable conductivities. The controllable thin film layer could be photoconductive or temperature sensitive that allows change in its conductivity to occur by means of light illumination or temperature variation. Instead of depositing the controllable thin film with variable conductivity, freestanding thin film such as MEMS structures can also be utilized as the medium between the conducting islands and the ground plane. According to this invention, bandstop characteristics of the planar PBG structure are switched off when the controllable thin film is conductive or the freestanding thin film is in contact with the conducting islands and the ground plane. Meanwhile the bandstop characteristics are switched on when the controllable thin film is resistive or the freestanding thin film is not in contact with the conducting islands. At the end, switching uniplanar-compact PBG (UC-PBG) structures with photoconductive or temperature sensitive material, which is deposited inside of the gaps located in the ground plane, is also described.
摘要翻译：光子带隙（PBG）结构用于微波部件作为滤波器以抑制不期望的信号，因为它们具有根据结构尺寸在特定频率范围产生带阻效应的能力。 PBG结构的独特性质是由于介电常数的周期性变化，因此随行进电磁波产生干扰。这种周期性布置可以存在于电介质基板的内部或微带传输线结构的接地平面内。本发明提供了可调谐或可切换的平面PBG结构，其包含接地平面内的周期性穿孔的格子图案。通过沉积由具有可变电导率的可控薄膜层包围的导电岛来实现带阻特性的调谐或切换。可控薄膜层可以是光导或温度敏感的，其允许通过光照或温度变化发生其导电性的变化。代替沉积具有可变电导率的可控薄膜，也可以使用诸如MEMS结构的独立薄膜作为导电岛和接地平面之间的介质。根据本发明，当可控薄膜导电或独立薄膜与导电岛和接地平面接触时，平面PBG结构的阻带特性被切断。同时，当可控薄膜是电阻性的或独立的薄膜不与导电岛接触时，阻带特性被接通。最后，还介绍了沉积在位于接地平面中的间隙内的光导或温敏材料的开关单面紧凑型PBG（UC-PBG）结构。

4. 发明申请

US20160126355A1 Thin film transistors with metal oxynitride active channels for electronic displays 审中-公开
标题翻译：具有用于电子显示器的金属氮氧化物活性通道的薄膜晶体管
公开(公告)号：US20160126355A1
公开(公告)日：2016-05-05
申请号：US14121896
申请日：2014-11-03
申请人： Ishiang Shih , Andy Shih , Cindy Qiu , Julia Qiu , Yi-Chi Shih , Chunong Qiu
发明人： Ishiang Shih , Andy Shih , Cindy Qiu , Julia Qiu , Yi-Chi Shih , Chunong Qiu
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/1251 , H01L27/3262 , H01L29/78696
摘要： In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active channel layer is provided for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and minimize unwanted power dissipation in the backplane circuit.Another embodiment of the invention provides a high electron mobility thin film transistor structure with a plurality of metal oxynitride active channel layers and a gate insulating layer for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and to minimize unwanted power dissipation in the backplane circuit.In yet another embodiment of the invention a high electron mobility thin film transistor structure with a plurality of gate insulating layers and a plurality of metal oxynitride active channel layers for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layers and to minimize unwanted power dissipation in the backplane circuit.
摘要翻译：在本发明的一个实施例中，提供具有多个栅极绝缘层和金属氧氮化物有源沟道层的高电子迁移率薄膜晶体管，用于形成用于电子显示器中的像素切换的背板电路，以减少不需要的导通状态串联电阻在金属氮氧化物有源沟道层中，并且使背板电路中的不需要的功率消耗最小化。本发明的另一个实施例提供了具有多个金属氧氮化物有源沟道层的高电子迁移率薄膜晶体管结构和用于形成用于电子显示器中的像素切换的背板电路的栅极绝缘层，以减少在电子显示器中的不需要的导通状态串联电阻金属氧氮化物有源沟道层，并最大限度地减少背板电路中的不需要的功耗。在本发明的另一个实施例中，具有多个栅极绝缘层和多个金属氧氮化物有源沟道层的高电子迁移率薄膜晶体管结构，用于形成用于电子显示器中的像素切换的背板电路，以减少不需要的导通状态系列金属氮氧化物有源沟道层中的电阻，并且使背板电路中的不需要的功率消耗最小化。

5. 发明授权

US09324739B1 Thin film transistors with metal oxynitride active channels for electronic displays 有权
公开(公告)号：US09324739B1
公开(公告)日：2016-04-26
申请号：US14121896
申请日：2014-11-03
申请人： Ishiang Shih , Andy Shih , Cindy Qiu , Julia Qiu , Yi-Chi Shih , Chunong Qiu
发明人： Ishiang Shih , Andy Shih , Cindy Qiu , Julia Qiu , Yi-Chi Shih , Chunong Qiu
IPC分类号： H01L27/12 , H01L29/786 , H01L27/32
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/1251 , H01L27/3262 , H01L29/78696
摘要： In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active channel layer is provided for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and minimize unwanted power dissipation in the backplane circuit.Another embodiment of the invention provides a high electron mobility thin film transistor structure with a plurality of metal oxynitride active channel layers and a gate insulating layer for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and to minimize unwanted power dissipation in the backplane circuit.In yet another embodiment of the invention a high electron mobility thin film transistor structure with a plurality of gate insulating layers and a plurality of metal oxynitride active channel layers for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layers and to minimize unwanted power dissipation in the backplane circuit.

6. 发明申请

US20060036065A1 Soluble aniline-thiophene copolymers 失效
标题翻译：苯胺 - 噻吩共聚物
公开(公告)号：US20060036065A1
公开(公告)日：2006-02-16
申请号：US10918804
申请日：2004-08-16
申请人： Steven Xiao , Chunong Qiu , Cindy Qiu
发明人： Steven Xiao , Chunong Qiu , Cindy Qiu
IPC分类号： C08G75/00 , C08L81/00
CPC分类号： C08G73/0273
摘要： The present invention discloses soluble copolymers of aniline and thiophene having a general formula I. Wherein: m and n each independently represents an integer, with m≧1 and n≧2. R1, R2, R3, R4, R5, R6 and R7 each independently represents, hydrogen atom, or a liner or branched or cyclo aliphatic group having from 1 to 20 carbon atoms, or an aromatic group having from 5 to 30 carbon atoms, or any other functional group, but at least one among R1, R2, R3, R4, R5, R6, and R7 is not a hydrogen atom. The present invention also teaches methods for the synthesis, characterization and application of the disclosed copolymers.
摘要翻译：本发明公开了具有通式I的苯胺和噻吩的可溶性共聚物。其中m和n各自独立地表示整数，其中m≥1且n> = 2。 R 1，R 2，R 3，R 4，R 5，R 6和R 7各自独立地表示氢原子或具有1至20个碳原子的直链或支链或环状脂族基团或具有5至30个碳原子的芳族基团，或任何其它官能团，但R 1，R 2，R 3，R 4，R 5，R 6和R 7中的至少一个不是氢原子。本发明还教导了所公开的共聚物的合成，表征和应用的方法。

7. 发明申请

US20050019976A1 Non-vacuum methods for the fabrication of organic semiconductor devices 失效
标题翻译：用于制造有机半导体器件的非真空方法
公开(公告)号：US20050019976A1
公开(公告)日：2005-01-27
申请号：US10624003
申请日：2003-07-22
申请人： Steven Xiao , Chunong Qiu , Cindy Qiu
发明人： Steven Xiao , Chunong Qiu , Cindy Qiu
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0021 , H01L51/0006 , H01L51/0022 , H01L51/0024 , H01L51/0037 , H01L51/0038 , H01L51/424 , H01L51/441 , H01L51/442 , H01L51/5203 , Y02E10/549
摘要： This invention discloses methods for the fabrication of organic semiconductor material-based devices under non-vacuum environment. In one embodiment, electrodes are formed by electrodeposition from an electrolyte containing ions or complexes of the electrode materials to be deposited. In another embodiment, electrodes are formed by solution processing from a solution (or ink) containing nano-particle of the electrode materials or the precursor of electrode materials to be deposited. In addition, two different modes, either layer by layer or layer to layer, are disclosed for the fabrication of organic semiconductor material-based devices, wherein all semiconductor organic materials required by the function of the desired device are deposited under an non-vacuum environment.
摘要翻译：本发明公开了在非真空环境下制造基于有机半导体材料的器件的方法。在一个实施例中，电极通过从包含待沉积的电极材料的离子或络合物的电解质电沉积形成。在另一个实施方案中，通过溶液处理从含有电极材料的纳米颗粒或待沉积的电极材料的前体的溶液（或油墨）形成电极。另外，为了制造基于有机半导体材料的器件，公开了分层或层到层的两种不同的模式，其中所需器件功能所需的所有半导体有机材料在非真空环境下沉积。

8. 发明授权

US07208756B2 Organic semiconductor devices having low contact resistance 失效
标题翻译：具有低接触电阻的有机半导体器件
公开(公告)号：US07208756B2
公开(公告)日：2007-04-24
申请号：US10914676
申请日：2004-08-10
申请人： Ishiang Shih , Yi Chen , Chunong Qiu , Cindy X. Qiu , Steven Shuyong Xiao
发明人： Ishiang Shih , Yi Chen , Chunong Qiu , Cindy X. Qiu , Steven Shuyong Xiao
IPC分类号： H01L29/08
CPC分类号： H01L51/105 , H01L51/0021 , H01L51/0541 , H01L51/0545 , Y02E10/549
摘要： Organic semiconductor-based devices such as thin film transistors, organic light emitting devices and solar cells have potential in low cost electronic and optoelectronic applications. The performance of these organic semiconductor-based devices is often limited by the large resistance between the organic semiconductors and counter electrodes. This invention provides device structures and methods to reduce the unwanted resistance.
摘要翻译：有机半导体器件如薄膜晶体管，有机发光器件和太阳能电池具有低成本电子和光电子应用的潜力。这些基于有机半导体的器件的性能通常受到有机半导体和对电极之间的大电阻的限制。本发明提供了减少不需要的电阻的器件结构和方法。

9. 发明申请

US20050045874A1 ORGANIC SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION 失效
标题翻译：有机半导体器件及其制造方法
公开(公告)号：US20050045874A1
公开(公告)日：2005-03-03
申请号：US10652959
申请日：2003-09-02
申请人： Steven Xiao , Chunong Qiu , Cindy Qiu
发明人： Steven Xiao , Chunong Qiu , Cindy Qiu
IPC分类号： H01L35/24 , H01L51/00 , H01L51/30 , H01L29/08
CPC分类号： H01L51/0575 , H01L51/0037 , H01L51/0038 , H01L51/4246 , Y02E10/549
摘要： The present invention discloses a vertical junction structure with multi-PN channels, which provides a maximum interface between p-type and n-type materials in order to assist the charge separation, and offers continuous phases in both p- and n-type materials for charge transport in opposite directions. The present invention also provides methods for constructing the device structures. The main steps include 1) assembling a porous structure or a framework with semiconductor materials of one conduction type on a first electrode, 2) filling pores or coating the framework made from the materials in step 1 with semiconductors or precursors of conducting polymer of a opposite conduction type, 3) chemically and physically treating the system to form closed packed multi-PN channels.
摘要翻译：本发明公开了一种具有多PN通道的垂直结结构，其提供p型和n型材料之间的最大界面，以协助电荷分离，并且在p型和n型材料中提供连续相电荷运输在相反的方向。本发明还提供了构造装置结构的方法。主要步骤包括：1）在第一电极上组装一种导电类型的半导体材料的多孔结构或框架，2）用步骤1中的材料填充孔或涂覆由该材料制成的框架，导电类型，3）化学和物理处理系统以形成封闭多PN通道。

10. 发明申请

US20060036097A1 Oxadiazole metallic complexes and their electronic and opto-electronic applications 有权
标题翻译：恶二唑金属络合物及其电子和光电应用
公开(公告)号：US20060036097A1
公开(公告)日：2006-02-16
申请号：US10917474
申请日：2004-08-13
申请人： Chunong Qiu , Steven Xiao , Cindy Qiu
发明人： Chunong Qiu , Steven Xiao , Cindy Qiu
IPC分类号： C07D271/10 , C09K11/06 , H05B33/14
CPC分类号： C09K11/06 , C07D271/10 , C07F15/0033 , C09K2211/1029 , C09K2211/1048 , C09K2211/185 , H01L51/0085 , H01L51/5016 , H05B33/14 , Y02E10/549 , Y10S428/917
摘要： The present invention relates to oxadiazole metallic complexes. More specifically it relates to the synthesis and electronic and opto-electronic applications of oxadiazole metallic complexes having a general Formula I, wherein each of variables is defined herein.
摘要翻译：本发明涉及恶二唑金属络合物。更具体地，本发明涉及具有通式I的恶二唑金属络合物的合成和电子和光电应用，其中每个变量在本文中定义。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式