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1. 发明申请

US20050275038A1 Indium oxide-based thin film transistors and circuits 有权
标题翻译：氧化铟基薄膜晶体管和电路
公开(公告)号：US20050275038A1
公开(公告)日：2005-12-15
申请号：US10866267
申请日：2004-06-14
申请人： Yi-Chi Shih , Cindy Qiu , Ishiang Shih , Chunong Qiu
发明人： Yi-Chi Shih , Cindy Qiu , Ishiang Shih , Chunong Qiu
IPC分类号： H01L29/76 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/78633 , H01L29/78645 , H01L29/78648
摘要： In electronic displays or imaging units, the control of pixels is achieved by an array of transistors. These transistors are in a thin film form and arranged in a two-dimensional configuration to form switching circuits, driving circuits or even read-out circuits. In this invention, thin film transistors and circuits with indium oxide-based channel layers are provided. These thin film transistors and circuits may be fabricated at low temperatures on various substrates and with high charge carrier mobilities. In addition to conventional rigid substrates, the present thin film transistors and circuits are particularly suited for the fabrication on flexible and transparent substrates for electronic display and imaging applications. Methods for the fabrication of the thin film transistors with indium oxide-based channels are provided.
摘要翻译：在电子显示器或成像单元中，通过晶体管阵列来实现像素的控制。这些晶体管是薄膜形式并且被布置成二维配置以形成开关电路，驱动电路或甚至读出电路。在本发明中，提供了具有氧化铟基沟道层的薄膜晶体管和电路。这些薄膜晶体管和电路可以在各种基板上的低温下制造，并具有高电荷载流子迁移率。除了传统的刚性衬底之外，本发明的薄膜晶体管和电路特别适用于用于电子显示和成像应用的柔性和透明衬底上的制造。提供了制造具有基于氧化铟的通道的薄膜晶体管的方法。

2. 发明申请

US20160126355A1 Thin film transistors with metal oxynitride active channels for electronic displays 审中-公开
标题翻译：具有用于电子显示器的金属氮氧化物活性通道的薄膜晶体管
公开(公告)号：US20160126355A1
公开(公告)日：2016-05-05
申请号：US14121896
申请日：2014-11-03
申请人： Ishiang Shih , Andy Shih , Cindy Qiu , Julia Qiu , Yi-Chi Shih , Chunong Qiu
发明人： Ishiang Shih , Andy Shih , Cindy Qiu , Julia Qiu , Yi-Chi Shih , Chunong Qiu
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/1251 , H01L27/3262 , H01L29/78696
摘要： In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active channel layer is provided for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and minimize unwanted power dissipation in the backplane circuit.Another embodiment of the invention provides a high electron mobility thin film transistor structure with a plurality of metal oxynitride active channel layers and a gate insulating layer for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and to minimize unwanted power dissipation in the backplane circuit.In yet another embodiment of the invention a high electron mobility thin film transistor structure with a plurality of gate insulating layers and a plurality of metal oxynitride active channel layers for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layers and to minimize unwanted power dissipation in the backplane circuit.
摘要翻译：在本发明的一个实施例中，提供具有多个栅极绝缘层和金属氧氮化物有源沟道层的高电子迁移率薄膜晶体管，用于形成用于电子显示器中的像素切换的背板电路，以减少不需要的导通状态串联电阻在金属氮氧化物有源沟道层中，并且使背板电路中的不需要的功率消耗最小化。本发明的另一个实施例提供了具有多个金属氧氮化物有源沟道层的高电子迁移率薄膜晶体管结构和用于形成用于电子显示器中的像素切换的背板电路的栅极绝缘层，以减少在电子显示器中的不需要的导通状态串联电阻金属氧氮化物有源沟道层，并最大限度地减少背板电路中的不需要的功耗。在本发明的另一个实施例中，具有多个栅极绝缘层和多个金属氧氮化物有源沟道层的高电子迁移率薄膜晶体管结构，用于形成用于电子显示器中的像素切换的背板电路，以减少不需要的导通状态系列金属氮氧化物有源沟道层中的电阻，并且使背板电路中的不需要的功率消耗最小化。

3. 发明授权

US09324739B1 Thin film transistors with metal oxynitride active channels for electronic displays 有权
公开(公告)号：US09324739B1
公开(公告)日：2016-04-26
申请号：US14121896
申请日：2014-11-03
申请人： Ishiang Shih , Andy Shih , Cindy Qiu , Julia Qiu , Yi-Chi Shih , Chunong Qiu
发明人： Ishiang Shih , Andy Shih , Cindy Qiu , Julia Qiu , Yi-Chi Shih , Chunong Qiu
IPC分类号： H01L27/12 , H01L29/786 , H01L27/32
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/1251 , H01L27/3262 , H01L29/78696
摘要： In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active channel layer is provided for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and minimize unwanted power dissipation in the backplane circuit.Another embodiment of the invention provides a high electron mobility thin film transistor structure with a plurality of metal oxynitride active channel layers and a gate insulating layer for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and to minimize unwanted power dissipation in the backplane circuit.In yet another embodiment of the invention a high electron mobility thin film transistor structure with a plurality of gate insulating layers and a plurality of metal oxynitride active channel layers for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layers and to minimize unwanted power dissipation in the backplane circuit.

4. 发明申请

US20200036364A1 Tunable surface acoustic wave resonators and SAW filters with digital to analog converters 审中-公开
公开(公告)号：US20200036364A1
公开(公告)日：2020-01-30
申请号：US15998270
申请日：2018-07-27
申请人： Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Julia Qiu , Andy Shih , Yi-Chi Shih
发明人： Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Julia Qiu , Andy Shih , Yi-Chi Shih
IPC分类号： H03H9/64 , H03H9/02 , H03H9/145 , H03H9/25 , H03M1/66 , H01L41/107
摘要： Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. The present invention provides tunable surface acoustic wave (SAW) IDT structures with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters (DACs). The DAC converts an input digital signal to an output DC voltage and provide DC bias voltages to the SAW IDTs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the SAW IDTs.

5. 发明申请

US20160308067A1 Metal oxynitride transistor devices 审中-公开
标题翻译：金属氮氧化物晶体管器件
公开(公告)号：US20160308067A1
公开(公告)日：2016-10-20
申请号：US14545285
申请日：2015-04-17
申请人： Ishiang Shih , Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Chunong Qiu , Julia Qiu
发明人： Ishiang Shih , Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Chunong Qiu , Julia Qiu
IPC分类号： H01L29/786 , H01L29/423 , H01L29/417
CPC分类号： H01L29/78696 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/7869
摘要： A thin film transistor with a first metal oxynitride channel layer or a first metal oxide channel layer is provided to have controlled channel doping concentrations in a bottom surface region, a central channel region and a top surface region so that doping concentration ratios between the bottom surface region and the central channel region and between the top surface region and the central channel region are greater than a first threshold doping ratio and less than a second threshold doping ratio in order to retain more uniform charge carrier mobility values in the first channel layer and to improve the performance of the thin film transistor devices.
摘要翻译：提供了具有第一金属氧氮化物沟道层或第一金属氧化物沟道层的薄膜晶体管，以在底表面区域，中心沟道区域和顶表面区域中具有受控的沟道掺杂浓度，使得底表面区域和中心沟道区域之间以及顶表面区域和中心沟道区域之间的区域大于第一阈值掺杂比并且小于第二阈值掺杂比，以便在第一沟道层中保持更均匀的载流子迁移率值，并且提高薄膜晶体管器件的性能。

6. 发明授权

US09276131B2 Stress release structures for metal electrodes of semiconductor devices 有权
标题翻译：半导体器件金属电极的应力释放结构
公开(公告)号：US09276131B2
公开(公告)日：2016-03-01
申请号：US13986500
申请日：2013-05-10
申请人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy Xing Qiu , Chunong Qiu , Yi-Chi Shih
IPC分类号： H01L29/66 , H01L29/788 , H01L29/737
CPC分类号： H01L29/788 , H01L29/66234 , H01L29/66242 , H01L29/7371 , H01L29/778 , H01L2924/1305 , H01L2924/13051
摘要： This invention teaches stress release metal electrodes for gate, drain and source in a field effect transistor and stress release metal electrodes for emitter, base and collector in a bipolar transistor. Due to the large difference in the thermal expansion coefficients between semiconductor materials and metal electrodes, significant strain and stresses can be induced in the devices during the fabrication and operation. The present invention provides metal electrode with stress release structures to reduce the strain and stresses in these devices.
摘要翻译：本发明教导了在场效应晶体管中用于栅极，漏极和源极的应力释放金属电极，以及在双极晶体管中用于发射极，基极和集电极的应力释放金属电极。由于半导体材料和金属电极之间的热膨胀系数的差异很大，在制造和操作期间可能会在器件中引起显着的应变和应力。本发明提供具有应力释放结构的金属电极，以减少这些装置中的应变和应力。

7. 发明申请

US20150372096A1 High Electron Mobility Transistors and Integrated Circuits with Improved Feature Uniformity and Reduced defects for Microwave and Millimetre Wave Applications 审中-公开
标题翻译：高电子迁移率晶体管和集成电路具有改进的特征均匀性和减少微波和毫米波应用的缺陷
公开(公告)号：US20150372096A1
公开(公告)日：2015-12-24
申请号：US14120716
申请日：2014-06-20
申请人： Ishiang Shih , Chunong Qiu , Cindy X. Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Chunong Qiu , Cindy X. Qiu , Yi-Chi Shih
IPC分类号： H01L29/20 , H01L29/778 , H01L29/205 , H01L27/06
CPC分类号： H01L29/2003 , H01L21/02378 , H01L21/02381 , H01L21/02395 , H01L21/02458 , H01L21/02463 , H01L21/02499 , H01L21/0254 , H01L21/02546 , H01L21/02664 , H01L21/0274 , H01L21/3065 , H01L21/3083 , H01L21/8252 , H01L27/0203 , H01L27/0605 , H01L27/0629 , H01L27/088 , H01L29/0843 , H01L29/66462 , H01L29/7783 , H01L2924/13064
摘要： High mobility transistors and microwave integrated circuits with an improved uniformity of the width of the smallest of features, an increased lithographic yield and reduced defects in the active components are provided. Before and during fabrication, a first grooving process is performed to partially or completely remove composite epitaxial layers in the field lanes to reduce the initial bow to be smaller than DOF range and to improve the uniformity of the critical dimension. A second grooving process may also be performed to remove composite epitaxial layers in the dicing lanes to further improve the uniformity of the width of the smallest features for the devices and circuits to be made.
摘要翻译：提供了高移动性晶体管和微波集成电路，其具有改进的最小特征的宽度的均匀性，增加的平版印刷产量和减少的有源部件中的缺陷。在制造之前和期间，执行第一个开槽过程以部分地或完全地去除现场通道中的复合外延层，以将初始弓缩小到小于DOF范围并提高临界尺寸的均匀性。还可以执行第二个切槽工艺以去除切割通道中的复合外延层，以进一步提高要制造的器件和电路的最小特征的宽度的均匀性。

8. 发明授权

US10636916B2 High electron mobility thin film transistors 有权
公开(公告)号：US10636916B2
公开(公告)日：2020-04-28
申请号：US15999949
申请日：2018-09-05
申请人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
IPC分类号： H01L29/778 , H01L29/786 , H01L29/66
CPC分类号： H01L29/78696 , H01L29/6656 , H01L29/7782 , H01L29/7869 , H01L29/78618 , H01L29/78633
摘要： Structures of high electron mobility thin film transistors (HEM-TFTs) are provided in this invention. In one embodiment, HEM-TFTs with a single heterojunction structure are disclosed to have a substrate, a first metal oxide channel layer, a first spacer layer, a first doped layer, a first barrier layer, a source, a drain and a gate. In another embodiment, HEM-TFTs with a double heterojunction structure are provided to have a substrate, a second barrier layer, a second doped layer, a second spacer layer, a first metal oxide channel layer, a second spacer layer, a second doped layer, a second barrier layer, a source, a drain and a gate. In yet another embodiment, HEM-TFTs with a single heterojunction structure are disclosed to comprise a substrate, a first metal oxynitride channel layer, a first spacer layer, a first doped layer, a first barrier layer, a source, a drain and a gate. In still another embodiment, HEM-TFTs with a double heterojunction structure are provided to include a substrate, a first barrier layer, a first doped layer, a first spacer layer, a first metal oxynitride channel layer, a second spacer layer, a second doped layer, a second barrier layer, a source, a drain and a gate.

9. 发明授权

US09799686B2 Millimetre wave integrated circuits with thin film transistors 有权
公开(公告)号：US09799686B2
公开(公告)日：2017-10-24
申请号：US13987832
申请日：2013-09-09
申请人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Yi-Chi Shih
IPC分类号： H01L27/13 , H01L21/84 , H01L27/12 , H01L29/423 , H01L21/02 , H01L21/4757 , H01L21/4763 , H01L49/02 , H01L29/24 , H01L29/66
CPC分类号： H01L27/1259 , H01L21/02565 , H01L21/47573 , H01L21/47635 , H01L27/1218 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L28/20 , H01L28/40 , H01L29/24 , H01L29/42384 , H01L29/66969
摘要： MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

10. 发明申请

US20160225915A1 Metal oxynitride transistor devices 审中-公开
标题翻译：金属氮氧化物晶体管器件
公开(公告)号：US20160225915A1
公开(公告)日：2016-08-04
申请号：US14544652
申请日：2015-01-30
申请人： Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Ishiang Shih , Chunong Qiu , Julia Qiu
发明人： Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Ishiang Shih , Chunong Qiu , Julia Qiu
IPC分类号： H01L29/786 , H01L29/49 , H01L29/423 , H01L29/24
CPC分类号： H01L29/78696 , H01L29/1054 , H01L29/24 , H01L29/423 , H01L29/42364 , H01L29/42372 , H01L29/4908 , H01L29/78609 , H01L29/7869
摘要： Transistors with a first metal oxynitride channel layer and a second metal oxynitride barrier layer are provided. The first metal oxynitride channel layer is lightly doped or without intentional doping to achieve high carrier mobility. Impurity atoms are introduced into the second metal oxynitride barrier layer and the donated carriers migrate or drift into the first metal oxynitride channel layer to effect high mobility conduction between source and drain.
摘要翻译：提供具有第一金属氧氮化物沟道层和第二金属氮氧化物阻挡层的晶体管。第一金属氧氮化物沟道层被轻掺杂或没有有意掺杂以实现高载流子迁移率。杂质原子被引入到第二金属氧氮化物阻挡层中，并且所捐赠的载流子迁移或漂移到第一金属氧氮化物沟道层中以实现源极和漏极之间的高迁移率传导。

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