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1. 发明授权

US09324739B1 Thin film transistors with metal oxynitride active channels for electronic displays 有权
公开(公告)号：US09324739B1
公开(公告)日：2016-04-26
申请号：US14121896
申请日：2014-11-03
申请人： Ishiang Shih , Andy Shih , Cindy Qiu , Julia Qiu , Yi-Chi Shih , Chunong Qiu
发明人： Ishiang Shih , Andy Shih , Cindy Qiu , Julia Qiu , Yi-Chi Shih , Chunong Qiu
IPC分类号： H01L27/12 , H01L29/786 , H01L27/32
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/1251 , H01L27/3262 , H01L29/78696
摘要： In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active channel layer is provided for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and minimize unwanted power dissipation in the backplane circuit.Another embodiment of the invention provides a high electron mobility thin film transistor structure with a plurality of metal oxynitride active channel layers and a gate insulating layer for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and to minimize unwanted power dissipation in the backplane circuit.In yet another embodiment of the invention a high electron mobility thin film transistor structure with a plurality of gate insulating layers and a plurality of metal oxynitride active channel layers for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layers and to minimize unwanted power dissipation in the backplane circuit.

2. 发明申请

US20160126355A1 Thin film transistors with metal oxynitride active channels for electronic displays 审中-公开
标题翻译：具有用于电子显示器的金属氮氧化物活性通道的薄膜晶体管
公开(公告)号：US20160126355A1
公开(公告)日：2016-05-05
申请号：US14121896
申请日：2014-11-03
申请人： Ishiang Shih , Andy Shih , Cindy Qiu , Julia Qiu , Yi-Chi Shih , Chunong Qiu
发明人： Ishiang Shih , Andy Shih , Cindy Qiu , Julia Qiu , Yi-Chi Shih , Chunong Qiu
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/1251 , H01L27/3262 , H01L29/78696
摘要： In one embodiment of the invention, a high electron mobility thin film transistor with a plurality of gate insulating layers and a metal oxynitride active channel layer is provided for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and minimize unwanted power dissipation in the backplane circuit.Another embodiment of the invention provides a high electron mobility thin film transistor structure with a plurality of metal oxynitride active channel layers and a gate insulating layer for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layer and to minimize unwanted power dissipation in the backplane circuit.In yet another embodiment of the invention a high electron mobility thin film transistor structure with a plurality of gate insulating layers and a plurality of metal oxynitride active channel layers for forming a backplane circuit for pixel switching in an electronic display, to reduce unwanted ON state series resistance in the metal oxynitride active channel layers and to minimize unwanted power dissipation in the backplane circuit.
摘要翻译：在本发明的一个实施例中，提供具有多个栅极绝缘层和金属氧氮化物有源沟道层的高电子迁移率薄膜晶体管，用于形成用于电子显示器中的像素切换的背板电路，以减少不需要的导通状态串联电阻在金属氮氧化物有源沟道层中，并且使背板电路中的不需要的功率消耗最小化。本发明的另一个实施例提供了具有多个金属氧氮化物有源沟道层的高电子迁移率薄膜晶体管结构和用于形成用于电子显示器中的像素切换的背板电路的栅极绝缘层，以减少在电子显示器中的不需要的导通状态串联电阻金属氧氮化物有源沟道层，并最大限度地减少背板电路中的不需要的功耗。在本发明的另一个实施例中，具有多个栅极绝缘层和多个金属氧氮化物有源沟道层的高电子迁移率薄膜晶体管结构，用于形成用于电子显示器中的像素切换的背板电路，以减少不需要的导通状态系列金属氮氧化物有源沟道层中的电阻，并且使背板电路中的不需要的功率消耗最小化。

3. 发明申请

US20200036364A1 Tunable surface acoustic wave resonators and SAW filters with digital to analog converters 审中-公开
公开(公告)号：US20200036364A1
公开(公告)日：2020-01-30
申请号：US15998270
申请日：2018-07-27
申请人： Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Julia Qiu , Andy Shih , Yi-Chi Shih
发明人： Cindy X. Qiu , Ishiang Shih , Chunong Qiu , Julia Qiu , Andy Shih , Yi-Chi Shih
IPC分类号： H03H9/64 , H03H9/02 , H03H9/145 , H03H9/25 , H03M1/66 , H01L41/107
摘要： Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. The present invention provides tunable surface acoustic wave (SAW) IDT structures with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters (DACs). The DAC converts an input digital signal to an output DC voltage and provide DC bias voltages to the SAW IDTs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the SAW IDTs.

4. 发明申请

US20160308067A1 Metal oxynitride transistor devices 审中-公开
标题翻译：金属氮氧化物晶体管器件
公开(公告)号：US20160308067A1
公开(公告)日：2016-10-20
申请号：US14545285
申请日：2015-04-17
申请人： Ishiang Shih , Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Chunong Qiu , Julia Qiu
发明人： Ishiang Shih , Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Chunong Qiu , Julia Qiu
IPC分类号： H01L29/786 , H01L29/423 , H01L29/417
CPC分类号： H01L29/78696 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/7869
摘要： A thin film transistor with a first metal oxynitride channel layer or a first metal oxide channel layer is provided to have controlled channel doping concentrations in a bottom surface region, a central channel region and a top surface region so that doping concentration ratios between the bottom surface region and the central channel region and between the top surface region and the central channel region are greater than a first threshold doping ratio and less than a second threshold doping ratio in order to retain more uniform charge carrier mobility values in the first channel layer and to improve the performance of the thin film transistor devices.
摘要翻译：提供了具有第一金属氧氮化物沟道层或第一金属氧化物沟道层的薄膜晶体管，以在底表面区域，中心沟道区域和顶表面区域中具有受控的沟道掺杂浓度，使得底表面区域和中心沟道区域之间以及顶表面区域和中心沟道区域之间的区域大于第一阈值掺杂比并且小于第二阈值掺杂比，以便在第一沟道层中保持更均匀的载流子迁移率值，并且提高薄膜晶体管器件的性能。

5. 发明授权

US10636916B2 High electron mobility thin film transistors 有权
公开(公告)号：US10636916B2
公开(公告)日：2020-04-28
申请号：US15999949
申请日：2018-09-05
申请人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
IPC分类号： H01L29/778 , H01L29/786 , H01L29/66
CPC分类号： H01L29/78696 , H01L29/6656 , H01L29/7782 , H01L29/7869 , H01L29/78618 , H01L29/78633
摘要： Structures of high electron mobility thin film transistors (HEM-TFTs) are provided in this invention. In one embodiment, HEM-TFTs with a single heterojunction structure are disclosed to have a substrate, a first metal oxide channel layer, a first spacer layer, a first doped layer, a first barrier layer, a source, a drain and a gate. In another embodiment, HEM-TFTs with a double heterojunction structure are provided to have a substrate, a second barrier layer, a second doped layer, a second spacer layer, a first metal oxide channel layer, a second spacer layer, a second doped layer, a second barrier layer, a source, a drain and a gate. In yet another embodiment, HEM-TFTs with a single heterojunction structure are disclosed to comprise a substrate, a first metal oxynitride channel layer, a first spacer layer, a first doped layer, a first barrier layer, a source, a drain and a gate. In still another embodiment, HEM-TFTs with a double heterojunction structure are provided to include a substrate, a first barrier layer, a first doped layer, a first spacer layer, a first metal oxynitride channel layer, a second spacer layer, a second doped layer, a second barrier layer, a source, a drain and a gate.

6. 发明申请

US20160225915A1 Metal oxynitride transistor devices 审中-公开
标题翻译：金属氮氧化物晶体管器件
公开(公告)号：US20160225915A1
公开(公告)日：2016-08-04
申请号：US14544652
申请日：2015-01-30
申请人： Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Ishiang Shih , Chunong Qiu , Julia Qiu
发明人： Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Ishiang Shih , Chunong Qiu , Julia Qiu
IPC分类号： H01L29/786 , H01L29/49 , H01L29/423 , H01L29/24
CPC分类号： H01L29/78696 , H01L29/1054 , H01L29/24 , H01L29/423 , H01L29/42364 , H01L29/42372 , H01L29/4908 , H01L29/78609 , H01L29/7869
摘要： Transistors with a first metal oxynitride channel layer and a second metal oxynitride barrier layer are provided. The first metal oxynitride channel layer is lightly doped or without intentional doping to achieve high carrier mobility. Impurity atoms are introduced into the second metal oxynitride barrier layer and the donated carriers migrate or drift into the first metal oxynitride channel layer to effect high mobility conduction between source and drain.
摘要翻译：提供具有第一金属氧氮化物沟道层和第二金属氮氧化物阻挡层的晶体管。第一金属氧氮化物沟道层被轻掺杂或没有有意掺杂以实现高载流子迁移率。杂质原子被引入到第二金属氧氮化物阻挡层中，并且所捐赠的载流子迁移或漂移到第一金属氧氮化物沟道层中以实现源极和漏极之间的高迁移率传导。

7. 发明授权

US09324884B1 Metal oxynitride diode devices 有权
标题翻译：金属氮氧化物二极管器件
公开(公告)号：US09324884B1
公开(公告)日：2016-04-26
申请号：US14544752
申请日：2015-02-12
申请人： Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Ishiang Shih , Chunong Qiu , Julia Qiu
发明人： Cindy X. Qiu , Andy Shih , Yi-Chi Shih , Ishiang Shih , Chunong Qiu , Julia Qiu
IPC分类号： H01L29/51 , H01L29/861 , H01L29/24 , H01L29/45 , H01L29/06 , H01L23/31 , H01L23/29
CPC分类号： H01L29/861 , H01L23/291 , H01L23/3171 , H01L29/24 , H01L29/45 , H01L29/66969 , H01L2924/0002 , H01L2924/00
摘要： Metal oxynitride diodes having at least a first metal oxynitride layer of a first conduction type and a second metal oxynitride layer of a second conduction type are provided. The first oxynitride layer is selectively doped or un-intentionally doped and have high carrier mobility. The second oxynitride layer is also selectively doped or un-intentionally doped and have high carrier mobility. A compensated oxynitride drift layer having a low carrier density may be adopted to increase the breakdown voltage of the device.
摘要翻译：提供具有至少第一导电类型的第一金属氧氮化物层和第二导电类型的第二金属氧氮化物层的金属氧氮化物二极管。第一氧氮化物层是选择性掺杂的或非有意掺杂的并且具有高载流子迁移率。第二氧氮化物层也是选择性掺杂或非有意掺杂的并且具有高载流子迁移率。可以采用具有低载流子密度的补偿氮氧化物漂移层来增加器件的击穿电压。

8. 发明申请

US20190393860A1 Tunable film bark acoustic resonators and FBAR filters with digital to analog converters 审中-公开
公开(公告)号：US20190393860A1
公开(公告)日：2019-12-26
申请号：US15998066
申请日：2018-06-25
申请人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
IPC分类号： H03H9/56 , H03H9/17 , H03H9/13 , H03H9/02
摘要： The present invention provides tunable film bulk acoustic resonators (FBARs) with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters which convert an input digital signal to an output DC voltage and provide DC bias voltages to the FBARs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the FBARs. A plurality of the tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying the input digital signals applied to the digital to analog converters.

9. 发明申请

US20170366165A1 Tunable surface acoustic wave resonators and filters 审中-公开
公开(公告)号：US20170366165A1
公开(公告)日：2017-12-21
申请号：US14999711
申请日：2016-06-20
申请人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
IPC分类号： H03H9/64
CPC分类号： H03H9/145 , H03H9/02614 , H03H9/02976 , H03H9/14538 , H03H9/25 , H03H9/64 , H03H2009/02165
摘要： Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. This invention provides tunable surface acoustic wave resonators and filters utilizing semiconducting piezoelectric layers having embedded or elevated electrode doped regions. Both metallization ratio and loading mass are changed by varying a DC biasing voltage to effect a change in the resonant frequency of the tunable SAW devices.

10. 发明申请

US20170085246A1 Tunable surface acoustic wave resonators and filters 审中-公开
公开(公告)号：US20170085246A1
公开(公告)日：2017-03-23
申请号：US14756554
申请日：2015-09-17
申请人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
发明人： Ishiang Shih , Cindy X. Qiu , Chunong Qiu , Andy Shih , Julia Qiu , Yi-Chi Shih
IPC分类号： H03H9/145 , H03H9/25
CPC分类号： H03H9/02574 , H03H9/02834 , H03H9/14541 , H03H2009/02165
摘要： Filters and oscillators are important components for electronic systems especially those for communications. For many portable units operating at 2 GHz or less, surface acoustic wave resonators are used as filters or oscillators, the resonant frequency is determined by the electrode pitch and velocity of the surface acoustic waves. Because of the large number of frequency bands for communications, it is important to have SAW resonators where the resonant frequencies are tunable and adjustable. This invention provides tunable surface acoustic wave resonators utilizing semiconducting piezoelectric layers having embedded or elevated electrode doped regions. Both metallization ratio and loading mass are changed by varying a DC biasing voltage to effect a change in the resonant frequency. A plurality of the present tunable SAW devices may be connected into a tunable and selectable microwave filter for selecting and adjusting of the bandpass frequency or an tunable oscillator by varying the DC biasing voltages.

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