专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06416820B1 Method for forming carbonaceous hard film 失效
标题翻译：形成碳质硬膜的方法
公开(公告)号：US06416820B1
公开(公告)日：2002-07-09
申请号：US09443995
申请日：1999-11-19
申请人： Isao Yamada , Jiro Matsuo , Teruyuki Kitagawa , Allen Kirkpatrick
发明人： Isao Yamada , Jiro Matsuo , Teruyuki Kitagawa , Allen Kirkpatrick
IPC分类号： C23C1406
CPC分类号： C23C14/5833 , B82Y30/00 , C23C14/0605 , C23C14/58 , H01J2237/0812 , Y10T428/30
摘要： A method for enabling the formation of a carbonaceous hard film having a high hardness, strong adherence to the substrate, a wide range of substrate compatibility, and structural stability, which can be formed at room temperature and may cover a large area. The method includes vapor depositing a hard film of a carbonaceous material onto a substrate under vacuum by depositing a vaporized, hydrogen free carbonaceous material, which may be ionized or non-ionized, onto the substrate surface while irradiating the carbonaceous material with gas cluster ions, generated by ionizing gas clusters to form the film.
摘要翻译：能够形成具有高硬度，对基板的强粘附性，宽范围的基板相容性和结构稳定性的碳质硬膜的方法，其可以在室温下形成并且可以覆盖大面积。该方法包括在真空下通过将气化的不含氢的含碳材料（其可被离子化或非离子化）沉积到基底表面上同时用气体团簇离子辐射碳质材料，将碳质材料的硬膜蒸发沉积到基底上，通过电离气体簇形成膜。

2. 发明授权

US07022545B2 Production method of SiC monitor wafer 有权
标题翻译： SiC监测晶圆的生产方法
公开(公告)号：US07022545B2
公开(公告)日：2006-04-04
申请号：US10502537
申请日：2003-01-10
申请人： Isao Yamada , Jiro Matsuo , Noriaki Toyoda , Kazutoshi Murata , Naomasa Miyatake
发明人： Isao Yamada , Jiro Matsuo , Noriaki Toyoda , Kazutoshi Murata , Naomasa Miyatake
IPC分类号： H01L21/02 , H01L21/205 , B24C1/00 , C30B29/36
CPC分类号： C30B29/36 , C23C16/01 , C23C16/325 , C30B25/02 , C30B33/00 , Y10S438/931
摘要： The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011 atoms/cm2 or less to produce the SiC monitor wafer.
摘要翻译：本发明的目的是获得可以使表面变平的SiC监测晶片，直到可以进行粒子检测。通过CVD（化学气相沉积）法将晶体系统3C的SiC沉积在衬底上，并且将SiC从衬底上分离。在通过单独使用机械抛光或与CMP（Chemo Mechanical Polishing）组合使SiC表面平坦化之后，将GCIB（气体簇离子束）照射到表面，直到表面粗糙度变为Ra = 0.5nm以下，杂质浓度晶片表面变为1×10 11原子/ cm 2或更小，以产生SiC监测晶片。

3. 发明授权

US6013332A Boron doping by decaborane 失效
标题翻译：硼氢化硼由硼烷掺杂
公开(公告)号：US6013332A
公开(公告)日：2000-01-11
申请号：US762853
申请日：1996-12-06
申请人： Kenichi Goto , Masataka Kase , Jiro Matsuo , Isao Yamada , Daisuke Takeuchi , Noriaki Toyoda , Norihiro Shimada
发明人： Kenichi Goto , Masataka Kase , Jiro Matsuo , Isao Yamada , Daisuke Takeuchi , Noriaki Toyoda , Norihiro Shimada
IPC分类号： C23C14/48 , H01L21/265 , C23C14/14
CPC分类号： H01L21/2658 , C23C14/48 , H01L21/26513 , H01J2237/31701 , Y10S438/918
摘要： A method of manufacturing a semiconductor device comprising the steps of: ionizing decaborane; and implanting ionized decaborane into a silicon wafer. Solid decaborane can be vaporized in a reduced pressure atmosphere or by heating. A single decaborane molecule can provide 10 boron atoms while the acceleration energy per each boron atom can be reduced to about 1/10 of the acceleration energy for a decaborane molecule.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：电离十硼烷; 并将离子化的十硼烷注入到硅晶片中。固体十硼烷可在减压气氛或加热下汽化。单个十硼烷分子可以提供10个硼原子，而每个硼原子的加速能量可以降低到十五硼烷分子的加速能的约+ E，fra 1/10 + EE。

4. 发明授权

US06797334B2 Method for forming gas cluster and method for forming thin film 有权
标题翻译：形成气体簇的方法和形成薄膜的方法
公开(公告)号：US06797334B2
公开(公告)日：2004-09-28
申请号：US10648393
申请日：2003-08-27
申请人： Makoto Akizuki , Mitsuaki Harada , Satoru Ogasawara , Atsumasa Doi , Isao Yamada , Jiro Matsuo
发明人： Makoto Akizuki , Mitsuaki Harada , Satoru Ogasawara , Atsumasa Doi , Isao Yamada , Jiro Matsuo
IPC分类号： C23C1400
CPC分类号： B01J37/0215 , B01J37/347 , C07F17/00 , C08F4/65912 , C08F4/65916 , C08F10/02 , C23C14/0031 , C23C14/08 , C23C14/088 , C23C16/405 , C23C16/409 , C23C16/4482 , C23C16/513 , H01J2237/0812 , C08F4/6592
摘要： In order to deopsit a high-grade and extra-thin film without causing damage to the substrate at a relatively low temperature, the present invention provides a method for forming a cluster which is a lumpy group of atoms or molecules of a reactive substance at the room temperature under the atmospheric pressure, irradiating electrons onto clusters, irradiating the resulting cluster ions onto a substrate surface by accelerating by an acceleration voltage, and at the same time or alternately, irradiating one or more component gases of the deposit film onto the substrate surface, thereby depositing a thin film on the substrate surface through reaction.
摘要翻译：为了在较低的温度下对高品位和超薄的膜进行脱模而不会对基材造成损害，本发明提供了一种形成簇的方法，该簇是一组反应物质的原子或分子，在大气压下的室温下照射电子到簇上，通过加速电压加速照射所得到的簇离子到衬底表面，同时或者交替地将沉积膜的一种或多种组分气体照射到衬底表面上从而通过反应在衬底表面上沉积薄膜。

5. 发明授权

US06641937B1 Transparent conductive film and process for producing the film 失效
标题翻译：透明导电膜及其制造方法
公开(公告)号：US06641937B1
公开(公告)日：2003-11-04
申请号：US09710482
申请日：2000-11-09
申请人： Masato Kiuchi , Kensuke Murai , Shigeharu Tamura , Norimasa Umesaki , Jiro Matsuo , Isao Yamada
发明人： Masato Kiuchi , Kensuke Murai , Shigeharu Tamura , Norimasa Umesaki , Jiro Matsuo , Isao Yamada
IPC分类号： B32B1500
CPC分类号： C23C14/0676 , C23C14/0031 , C23C14/086 , C23C30/00 , G02F1/13439 , H01B1/08 , Y10T428/1055
摘要： The present invention is for a transparent conductive film of nitrogen-containing indium tin oxide 5 nm to 100 &mgr;m thick formed on a substrate. The process for producing the transparent film includes exciting the surface of the substrate in a vacuum and depositing vaporized indium tin oxide on the surface of the substrate. The surface may be excited with irradiation with an ion beam. The indium tin oxide may be deposited through vacuum deposition, laser abrasion, ion plating, ion beam deposition, or chemical vapor deposition. Vapor deposition of indium tin oxide may be performed using a sintered product of indium oxide and tin oxide or with indium metal and tin metal.
摘要翻译：本发明是在基板上形成5nm〜100μm厚的含氮铟锡氧化物的透明导电膜。制造透明膜的方法包括在真空中激发衬底的表面并在衬底的表面上沉积蒸发的氧化铟锡。可以用离子束照射激发表面。铟锡氧化物可以通过真空沉积，激光磨蚀，离子镀，离子束沉积或化学气相沉积沉积。铟锡氧化物的气相沉积可以使用氧化铟和氧化锡的烧结产物或铟金属和锡金属进行。

6. 发明申请

US20050042800A1 Production method of sic monitor wafer 有权
标题翻译： sic监测晶圆的生产方法
公开(公告)号：US20050042800A1
公开(公告)日：2005-02-24
申请号：US10502537
申请日：2003-01-10
申请人： Isao Yamada , Jiro Matsuo , Noriaki Toyoda , Kazutoshi Murata , Naomasa Miyatake
发明人： Isao Yamada , Jiro Matsuo , Noriaki Toyoda , Kazutoshi Murata , Naomasa Miyatake
IPC分类号： C23C16/01 , C23C16/32 , C30B25/02 , C30B29/36 , C30B33/00 , C30B33/12 , H01L21/02 , H01L21/205 , H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： C30B29/36 , C23C16/01 , C23C16/325 , C30B25/02 , C30B33/00 , Y10S438/931
摘要： The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011 atoms/cm2 or less to produce the SiC monitor wafer.
摘要翻译：本发明的目的是获得可以使表面变平的SiC监测晶片，直到可以进行粒子检测。通过CVD（化学气相沉积）法将晶体系统3C的SiC沉积在衬底上，并且将SiC从衬底上分离。在通过单独使用机械抛光或与CMP（Chemo Mechanical Polishing）组合使SiC表面平坦化之后，将GCIB（气体簇离子束）照射到表面，直到表面粗糙度变为Ra = 0.5nm以下，杂质浓度晶片表面变为1×1011原子/ cm 2或更小以产生SiC监测晶片。

7. 发明授权

US06486068B2 Method for manufacturing group III nitride compound semiconductor laser diodes 失效
标题翻译：制造III族氮化物半导体激光二极管的方法
公开(公告)号：US06486068B2
公开(公告)日：2002-11-26
申请号：US09004608
申请日：1998-01-08
申请人： Shiro Yamasaki , Seiji Nagai , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano , Isao Yamada , Jiro Matsuo
发明人： Shiro Yamasaki , Seiji Nagai , Masayoshi Koike , Isamu Akasaki , Hiroshi Amano , Isao Yamada , Jiro Matsuo
IPC分类号： H01L21302
CPC分类号： H01S5/0201 , H01S5/0203 , H01S5/32341
摘要： A method for manufacturing a laser diode using Group III nitride compound semiconductor comprising a buffer layer 2, an n+ layer 3, a cladding layer 4, an active layer 5, a p-type cladding layer 61, a contact layer 62, an SiO2 layer 9, an electrode 7 which is formed on the window formed in a portion of the SiO2 layer 9, and an electrode 8 which is formed on a portion of the n+ layer 3 by etching a portion of 4 layers from the contact layer 62 down to the cladding layer 4. One pair of opposite facets S of a cavity is formed by RIBE, and then the facets are etched by gas cluster ion beam etching using Ar gas. As a result, the facets S are flatted and the mirror reflection of the facets S is improved.
摘要翻译：一种使用III族氮化物化合物半导体制造激光二极管的方法，包括缓冲层2，n +层3，包覆层4，有源层5，p型覆层61，接触层62，SiO 2层如图9所示，形成在形成在SiO 2层9的一部分上的窗口上的电极7和通过从接触层62蚀刻4层的一部分而形成在n +层3的一部分上的电极8，通过RIBE形成空腔的一对相对面S，然后通过使用Ar气体的气体簇离子束蚀刻蚀刻该刻面。结果，小面S变平，并且小面S的镜面反射得到改善。

8. 发明授权

US08384807B2 Imaging element, drive device for an imaging element, drive method for an imaging element, image processing device, image processing method, and imaging device 有权
标题翻译：成像元件，成像元件的驱动装置，成像元件的驱动方法，图像处理装置，图像处理方法和成像装置
公开(公告)号：US08384807B2
公开(公告)日：2013-02-26
申请号：US13264094
申请日：2010-09-10
申请人： Isao Yamada
发明人： Isao Yamada
IPC分类号： H04N3/14 , H04N5/335 , H04N9/04
CPC分类号： H04N9/045 , H04N5/3458 , H04N5/37457
摘要： An imaging element includes: a plurality of color filters arranged in a Bayer array; photoelectric conversion elements provided for the respective color filters; a signal adder circuit which carries out additions in each of the unit grids, by (i) adding up signals outputted from two photoelectric conversion elements corresponding to different colors of two color filters out of four color filters, and (ii) adding up signals outputted from two photoelectric conversion elements corresponding to remaining two color filters; and an A/D converter. The imaging element outputs: (i) a first digital image signal where signals of one color out of Ye (yellow) and Cy (cyan), and signals of G, are alternately placed; and (ii) a second digital image signal where signals of an other color out of Ye and Cy, which is different from the one color, and signals of Mg (magenta), are alternately placed.
摘要翻译：成像元件包括：布置在拜耳阵列中的多个滤色器; 为各个滤色器设置的光电转换元件; 信号加法器电路，通过（i）将从两个滤色器中的两个滤色器的不同颜色相对应的两个光电转换元件输出的信号相加，以及（ii）输出的相加信号，在每个单元格栅中执行加法对应于剩余的两个滤色器的两个光电转换元件; 和A / D转换器。成像元件输出：（i）第一数字图像信号，其中Ye（黄色）和Cy（青色）中的一种颜色的信号和G的信号交替放置; 和（ii）第二数字图像信号，其中与一种颜色不同的Ye和Cy中的另一种颜色的信号和Mg（品红色）的信号交替放置。

9. 发明申请

US20100319545A1 CHARGED PARTICLE SEPARATION APPARATUS AND CHARGED PARTICLE BOMBARDMENT APPARATUS 审中-公开
标题翻译：充电颗粒分离装置和充电颗粒物料装置
公开(公告)号：US20100319545A1
公开(公告)日：2010-12-23
申请号：US12818758
申请日：2010-06-18
申请人： MASAKI NARUSHIMA , Koichi Mori , Isao Yamada , Noriaki Toyoda
发明人： MASAKI NARUSHIMA , Koichi Mori , Isao Yamada , Noriaki Toyoda
IPC分类号： B03C3/68 , B03C3/38
CPC分类号： H01J49/421 , H01J27/026 , H01J37/147 , H01J2237/3142 , H01J2237/3151 , H01J2237/31701
摘要： A charged particle separation apparatus that separates ionized gas clusters is disclosed. The charged particle separation apparatus includes three or more electric field applying parts arranged in an incident direction of an ionized gas cluster, wherein each of the electric field applying parts includes a pair of electrodes; an electric power source configured to supply alternating-current electric voltages to the three or more electric field applying parts in such a manner that an alternating-current electric voltage applied across one pair of the electrodes of one of the three or more electric field applying parts is different in phase from an alternating-current voltage applied across another pair of the electrodes of an adjacent one of the three or more electric field applying parts; and a plate including an opening in an extension of the incident direction.
摘要翻译：公开了一种分离离子化气体簇的带电粒子分离装置。带电粒子分离装置包括沿电离气体簇的入射方向配置的三个以上的电场施加部，其中，各电场施加部包括一对电极; 电源，被配置为向三个或更多个电场施加部提供交流电压，使得施加在三个或更多个电场施加部中的一个的一对电极上的交流电压与施加在三个或更多个电场施加部件中相邻一个的另一对电极上的交流电压的相位不同; 以及包括在入射方向的延伸部中的开口的板。

10. 发明申请

US20090250824A1 METHOD AND APPARATUS TO REDUCE PIN VOIDS 审中-公开
标题翻译：减少PIN VOIDS的方法和装置
公开(公告)号：US20090250824A1
公开(公告)日：2009-10-08
申请号：US12098311
申请日：2008-04-04
申请人： Xiwang Qi , Charan K. Gurumurthy , Tamil Selvy Selvamuniandy , Isao Yamada
发明人： Xiwang Qi , Charan K. Gurumurthy , Tamil Selvy Selvamuniandy , Isao Yamada
IPC分类号： H01L23/48 , H01L21/00
CPC分类号： H05K3/3426 , H01L23/49811 , H01L23/49827 , H01L2224/16225 , H01L2224/16235 , H01L2924/01046 , H01L2924/01079 , H01L2924/01087 , H01L2924/01327 , H01L2924/15312 , H05K2201/10318 , H05K2201/10772 , Y02P70/613 , H01L2924/00
摘要： A semiconductor package comprises a substrate that utilizes one or more pins to form external interconnects. The pins are bonded to bonding pads on the substrate by solder. The pins may each has a pin head that may have a bonding surface, wherein the bonding surface may comprises a center portion and a side portion that is tapered away relative to the center portion. In some embodiments, the bonding surface may comprise a round shape. In some embodiments, a gas escape path may be provided by the shape of the bonding surface to increase pin pull strength and/or solder strength. The package may further comprise a surface finish that may comprise a palladium layer with a reduced thickness to reduce the amount of palladium based IMC precipitation into the solder.
摘要翻译：半导体封装包括利用一个或多个引脚形成外部互连的基板。引脚通过焊料与基板上的焊盘接合。销可以各自具有可以具有接合表面的销头，其中接合表面可以包括中心部分和相对于中心部分逐渐变细的侧部部分。在一些实施例中，接合表面可以包括圆形。在一些实施例中，可以通过接合表面的形状提供气体逸出路径，以增加引脚拉伸强度和/或焊接强度。该封装还可以包括表面光洁度，其可以包括具有减小厚度的钯层，以减少基于钯的IMC沉淀到焊料中的量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式