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    • 5. 发明申请
    • TECHNIQUES TO IMPROVE RELIABILITY IN CU INTERCONNECTS USING CU INTERMETALLICS
    • 利用CU INTERMETALLICS提高CU互连可靠性的技术
    • WO2018002737A1
    • 2018-01-04
    • PCT/IB2017/052728
    • 2017-05-10
    • INTERNATIONAL BUSINESS MACHINES CORPORATIONIBM UNITED KINGDOM LIMITEDIBM (CHINA) INVESTMENT COMPANY LIMITED
    • HU, Chao-KunLAVOIE, ChristianROSSNAGEL, StephenSHAW, Thomas, McCarroll
    • H01L21/768H01L23/532
    • Techniques for improving reliability in Cu interconnects using Cu intermetallics are provided. In one aspect, a method of forming a Cu interconnect in a dielectric (114) over a Cu line (112) includes the steps of: forming at least one via (116) in the dielectric (114) over the Cu line (112); depositing a metal layer (118) onto the dielectric (114) and lining the via (116) such that the metal layer (118) is in contact with the Cu line (112) at the bottom of the via (116), wherein the metal layer (118) comprises at least one metal that can react with Cu to form a Cu intermetallic; annealing the metal layer (118) and the Cu line (112) under conditions sufficient to form a Cu intermetallic barrier (120) at the bottom of the via (116); and plating Cu (122) into the via (116) to form the Cu interconnect, wherein the Cu interconnect is separated from the Cu line (112) by the Cu intermetallic barrier (120). A device structure is also provided.
    • 提供了使用Cu金属间化合物提高Cu互连的可靠性的技术。 在一个方面,一种在Cu线(112)上的电介质(114)中形成Cu互连的方法包括以下步骤:在Cu线(112)上的电介质(114)中形成至少一个通孔(116) ; 将金属层(118)沉积到电介质(114)上并对通孔(116)进行衬里,使得金属层(118)与通孔(116)的底部处的Cu线(112)接触,其中 金属层(118)包含至少一种可与Cu反应以形成Cu金属间化合物的金属; 在足以在通孔(116)的底部形成Cu金属间势垒(120)的条件下退火金属层(118)和Cu线(112); 以及将Cu(122)电镀到通孔(116)中以形成Cu互连,其中Cu互连通过Cu金属间阻挡层(120)与Cu线(112)分离。 还提供设备结构。