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1. 发明公开

EP0433542A2 Optoelectronic devices 失效
标题翻译： Optoelektronische Vorrichtungen。
公开(公告)号：EP0433542A2
公开(公告)日：1991-06-26
申请号：EP90114315.6
申请日：1990-07-26
申请人： International Business Machines Corporation
发明人： Esaki, Leo , Ohno, Hideo , Mendez, Emilio Eugenio
IPC分类号： H01L33/00 , H01L31/0352 , H01S3/19
CPC分类号： H01L33/06 , B82Y20/00 , H01L31/0352 , H01S5/06203 , H01S5/06206 , H01S5/34 , H01S5/3402 , H01S5/3418 , H01S5/3419 , H01S5/3422 , H01S5/34306
摘要： The present invention is directed to novel optoelectronic devices, such as light emitters and detectors, that have a unique combination of semiconductor materials that provides a band arrangement resulting in improved efficiency of carrier injection. The devices are quantum well type devices in which discrete electronic states are formed by size quantization effects in the quantum well region. Electromagnetic radiation of emission and absorption occurs by the transition of electrons from a first energy state to a second energy state in either the conduction band or the valence band of the quantum well layer (12). The bands edges of the layers are offset such that under an appropriate bias, the discrete energy states reside in the bandgap of one of the electrodes (14) and in an allowed region of the other electrode (16), with one state residing in the conduction band of one electrode and the other state residing in the valence band of the other electrode. The wavelength of the emitted or detected light is inversely proportional to the energy difference between the first and second states. Wavelength customization is facilitated by techniques for adjusting the energy difference.
摘要翻译：本发明涉及新型光电器件，例如发光体和检测器，其具有提供带状布置的半导体材料的独特组合，从而提高载流子注入的效率。这些器件是量子阱型器件，其中通过量子阱区域中的尺寸量化效应形成分立的电子状态。发射和吸收的电磁辐射通过电子从量子阱层（12）的导带或价带中的第一能态转变为第二能态而发生。这些层的带边缘被偏移，使得在适当的偏压下，离散能态驻留在电极（14）之一和另一电极（16）的允许区域的带隙中，一个状态驻留在一个电极的导带和另一个电极的价带中的另一个状态。发射或检测到的光的波长与第一和第二状态之间的能量差成反比。通过调整能量差异的技术来促进波长定制。

2. 发明公开

EP0029481A1 Field effect semiconductor structure 失效
标题翻译： Feldeffekt-Halbleiterstruktur。
公开(公告)号：EP0029481A1
公开(公告)日：1981-06-03
申请号：EP80104215.1
申请日：1980-07-18
申请人： International Business Machines Corporation
发明人： Chang, Leroy Li-Gong , Esaki, Leo
IPC分类号： H01L29/10 , H01L29/36 , H01L29/203 , H01L29/80
CPC分类号： H01L29/155 , H01L29/7783
摘要： A metal semiconductor field effect transistor (MESFET) is provided with a laminated channel (8) consisting of alternating layers (9, 10) of two semiconductors, one having a narrow energy gap and light doping and the other having a wide energy gap and heavy doping. GaAs and GaAIAs, respectively, can be used for the alternating layers (9, 10).
摘要翻译：金属半导体场效应晶体管（MESFET）设置有由两个半导体的交替层（9,10）组成的层压沟道（8），一个具有窄能隙和轻掺杂，另一个具有宽的能隙和重的掺杂。 GaAs和GaAlAs分别可用于交替层（9,10）。

3. 发明授权

EP0400263B1 New class of magnetic materials for solid state devices 失效
标题翻译：磁材料的固态器件。
公开(公告)号：EP0400263B1
公开(公告)日：1994-05-11
申请号：EP90100486.1
申请日：1990-01-11
申请人： International Business Machines Corporation
发明人： Chang, Leroy L. , Esaki, Leo , Munekata, Hiro , Ohno, Hideo , von Molnar, Stephan
IPC分类号： H01F1/00 , C30B23/02 , C30B29/40
CPC分类号： C30B23/02 , C30B29/40 , H01F1/401 , H01F1/404 , H01F1/405 , H01F41/14 , H01L43/10 , Y10S438/918

4. 发明公开

EP0212295A3 Monocrystalline semiconductor superlattice structures 失效
标题翻译：单晶半导体超导结构
公开(公告)号：EP0212295A3
公开(公告)日：1988-02-24
申请号：EP86110053
申请日：1986-07-22
申请人： International Business Machines Corporation
发明人： Chang, Leroy Li-Gong , Esaki, Leo
IPC分类号： H01L29/14 , H01L29/76 , H01L29/205
CPC分类号： B82Y10/00 , H01L29/125 , H01L29/151 , H01L29/775
摘要： A semiconductor superlattice (1) is provided with a one-dimensional carrier path (a) at the intersection of low energy level layers (5, 7) of the superlattice. A group of layers in a first crystallographic direction (Y) comprises a low energy level layer (5) bounded by two higher energy level layers (4, 6). A series of layers in a second crystallographic direction (2) different from the first comprises a lower energy level layer (7) immediately adjacent the layers of the group of layers (4, 5, 6). The lower energy layer is bounded by a higher energy level layer (8). The low and higher energy level layers can be formed of Ga 1-x Al x A s where x is larger for higher energy level layers. The lower energy level layer can be formed from GaAs of 10nm thickness. Conductivity modulation through an adjacent exposed surface (11) can then be employed for controlling electron and hole movement in the path to define a quantum pipeline carrier path. Control and contacting electrodes may be positioned on the exposed surfaces.

5. 发明授权

EP0433542B1 Optoelectronic devices 失效
标题翻译：光电器件。
公开(公告)号：EP0433542B1
公开(公告)日：1995-07-05
申请号：EP90114315.6
申请日：1990-07-26
申请人： International Business Machines Corporation
发明人： Esaki, Leo , Ohno, Hideo , Mendez, Emilio Eugenio
IPC分类号： H01L33/00 , H01L31/0352 , H01S3/19
CPC分类号： H01L33/06 , B82Y20/00 , H01L31/0352 , H01S5/06203 , H01S5/06206 , H01S5/34 , H01S5/3402 , H01S5/3418 , H01S5/3419 , H01S5/3422 , H01S5/34306

6. 发明授权

EP0212295B1 Monocrystalline semiconductor superlattice structures 失效
标题翻译： MonolitischeHalbleiterübergitterstruktur。
公开(公告)号：EP0212295B1
公开(公告)日：1993-12-15
申请号：EP86110053.5
申请日：1986-07-22
申请人： International Business Machines Corporation
发明人： Chang, Leroy Li-Gong , Esaki, Leo
IPC分类号： H01L29/14 , H01L29/76 , H01L29/205
CPC分类号： B82Y10/00 , H01L29/125 , H01L29/151 , H01L29/775

7. 发明公开

EP0433542A3 Optoelectronic devices 失效
标题翻译：光电器件
公开(公告)号：EP0433542A3
公开(公告)日：1991-12-27
申请号：EP90114315.6
申请日：1990-07-26
申请人： International Business Machines Corporation
发明人： Esaki, Leo , Ohno, Hideo , Mendez, Emilio Eugenio
IPC分类号： H01L33/00 , H01L31/0352 , H01S3/19
CPC分类号： H01L33/06 , B82Y20/00 , H01L31/0352 , H01S5/06203 , H01S5/06206 , H01S5/34 , H01S5/3402 , H01S5/3418 , H01S5/3419 , H01S5/3422 , H01S5/34306
摘要： The present invention is directed to novel optoelectronic devices, such as light emitters and detectors, that have a unique combination of semiconductor materials that provides a band arrangement resulting in improved efficiency of carrier injection. The devices are quantum well type devices in which discrete electronic states are formed by size quantization effects in the quantum well region. Electromagnetic radiation of emission and absorption occurs by the transition of electrons from a first energy state to a second energy state in either the conduction band or the valence band of the quantum well layer (12). The bands edges of the layers are offset such that under an appropriate bias, the discrete energy states reside in the bandgap of one of the electrodes (14) and in an allowed region of the other electrode (16), with one state residing in the conduction band of one electrode and the other state residing in the valence band of the other electrode. The wavelength of the emitted or detected light is inversely proportional to the energy difference between the first and second states. Wavelength customization is facilitated by techniques for adjusting the energy difference.

8. 发明公开

EP0400263A1 New class of magnetic materials for solid state devices 失效
标题翻译： Magnetische MaterialienfürFestkörpervorrichtungen。
公开(公告)号：EP0400263A1
公开(公告)日：1990-12-05
申请号：EP90100486.1
申请日：1990-01-11
申请人： International Business Machines Corporation
发明人： Chang, Leroy L. , Esaki, Leo , Munekata, Hiro , Ohno, Hideo , von Molnar, Stephan
IPC分类号： H01F1/00 , C30B23/02 , C30B29/40
CPC分类号： C30B23/02 , C30B29/40 , H01F1/401 , H01F1/404 , H01F1/405 , H01F41/14 , H01L43/10 , Y10S438/918
摘要： A new semiconductor material or compound and method for its manufacture is disclosed. The material or compound has the Formula III-V or IV which includes as part of the compound, a transition element or a rare earth element present in an amount sufficient to change the material or compound from a paramagnetic state to a locally ordered magnetic state. The material or compound is made by depositing III, and V or IV and a transition element or a rare earth element onto a substrate at conditions such that the transition element or rare earth element that is deposited on the substrate is not in equilibrium with the material or compound. By employing this technique new semiconductor materials or compounds can be made including Ga 1-x Mn x As and In 1-x Mn x As where Mn is present in an amount greater than about 10²⁰ cm⁻³.
摘要翻译：公开了一种新的半导体材料或其制造方法。该材料或化合物具有式III-V或IV，其包括作为化合物的一部分的过渡元素或稀土元素，其量足以将材料或化合物从顺磁性状态改变为局部有序的磁状态。材料或化合物是通过将III和V或IV和过渡元素或稀土元素沉积在基底上而使沉积在基底上的过渡元素或稀土元素不与材料平衡的条件下制备的或化合物。通过采用这种技术，可以制备新的半导体材料或化合物，其包括Ga1-xMnxAs和In1-xMnxAs，其中Mn以大于约10 -2 cm -3的量存在。

9. 发明公开

EP0212295A2 Monocrystalline semiconductor superlattice structures 失效
标题翻译：单片半导体超晶格结构。
公开(公告)号：EP0212295A2
公开(公告)日：1987-03-04
申请号：EP86110053.5
申请日：1986-07-22
申请人： International Business Machines Corporation
发明人： Chang, Leroy Li-Gong , Esaki, Leo
IPC分类号： H01L29/14 , H01L29/76 , H01L29/205
CPC分类号： B82Y10/00 , H01L29/125 , H01L29/151 , H01L29/775
摘要： A semiconductor superlattice (1) is provided with a one-dimensional carrier path (a) at the intersection of low energy level layers (5, 7) of the superlattice. A group of layers in a first crystallographic direction (Y) comprises a low energy level layer (5) bounded by two higher energy level layers (4, 6). A series of layers in a second crystallographic direction (2) different from the first comprises a lower energy level layer (7) immediately adjacent the layers of the group of layers (4, 5, 6). The lower energy layer is bounded by a higher energy level layer (8). The low and higher energy level layers can be formed of Ga 1-x Al x A s where x is larger for higher energy level layers. The lower energy level layer can be formed from GaAs of 10nm thickness. Conductivity modulation through an adjacent exposed surface (11) can then be employed for controlling electron and hole movement in the path to define a quantum pipeline carrier path. Control and contacting electrodes may be positioned on the exposed surfaces.

10. 发明公开

EP0202383A1 Semiconductor device using holes as charge carriers 失效
标题翻译： Halbleiterbauelement mitLöchernalsLadungsträger。
公开(公告)号：EP0202383A1
公开(公告)日：1986-11-26
申请号：EP85308997.7
申请日：1985-12-11
申请人： International Business Machines Corporation
发明人： Esaki, Leo , Chang, Leroy Li-Gong , Wang, Wen-I
IPC分类号： H01L29/32 , H01L29/36 , H01L29/205 , H01L29/80
CPC分类号： H01L29/7783 , H01L29/205 , H01L29/432
摘要： @ Holes are the charge carriers along a conduction channel in an epitaxial layer (28) of semiconductor material (eg GaSb) formed on a supporting layer - (26) of semiconductor material (eg AISb) which has a lower valance-band energy than that of the material of the epitaxial layer. The material of the epitaxial layer (28) has a lattice spacing when unstrained which is different from the lattice spacing of the material of the supporting layer (26) which is rigid enough to strain the lattice of the material of the epitaxial layer. The material of the epitaxial layer is such that mobile holes are provided in its conduction channel due to the strain put on its lattice by the supporting layer. A further layer (20) of semiconductor material (eg AISb) contiguous with the epitaxial layer (28) is doped to induce the conduction channel in the epitaxial layer and to provide modulation doping.
摘要翻译：孔是沿着形成在半导体材料（例如AlSb）的支撑层（26）上的半导体材料（例如GaSb）的外延层（28）中的导电沟道的电荷载流子，其具有比所述半导体材料外延层的材料。外延层（28）的材料在不受约束条件下具有不同于支撑层（26）的材料的晶格间距的晶格间距，其刚性足以使外延层材料的晶格变形。外延层的材料是由于由支撑层放置在其栅格上的应变，在其导电通道中设置有移动孔。掺杂与外延层（28）邻接的另一层半导体材料（例如AlSb），以引入外延层中的导电沟道并提供调制掺杂。

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