专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130149806A1 METHODS OF FORMING PHOTO DETECTORS 有权
标题翻译：形成图像检测器的方法
公开(公告)号：US20130149806A1
公开(公告)日：2013-06-13
申请号：US13612736
申请日：2012-09-12
申请人： Sang Hoon KIM , Gyungock KIM , In Gyoo KIM , JiHo JOO , Ki Seok JANG
发明人： Sang Hoon KIM , Gyungock KIM , In Gyoo KIM , JiHo JOO , Ki Seok JANG
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , G02B6/12004 , G02B6/131 , H01L31/02327 , H01L31/103 , H01L31/1037 , H01L31/109 , Y02E10/547 , Y02P70/521
摘要： Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.
摘要翻译：提供了形成光电检测器的方法。该方法包括在衬底上提供半导体层，在半导体层中形成沟槽，在沟槽中使用选择性单晶生长工艺形成第一单晶层和第二单晶层，以及使第一和第二单晶层和半导体层以形成第一单晶图案，第二单晶图案和光波导。

2. 发明申请

US20130156057A1 SEMICONDUCTOR LASER DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体激光器件及其制造方法
公开(公告)号：US20130156057A1
公开(公告)日：2013-06-20
申请号：US13545889
申请日：2012-07-10
申请人： In Gyoo KIM , Gyungock KIM , Sang Hoon KIM , JiHo JOO , Ki Seok JANG
发明人： In Gyoo KIM , Gyungock KIM , Sang Hoon KIM , JiHo JOO , Ki Seok JANG
IPC分类号： H01S5/028 , H01L33/58
CPC分类号： H01S5/021 , H01S3/0637 , H01S5/0205 , H01S5/026 , H01S5/028 , H01S5/1032 , H01S5/125 , H01S5/2272 , H01S5/3027
摘要： The inventive concept provides semiconductor laser devices and methods of fabricating the same. According to the method, a silicon-crystalline germanium layer for emitting a laser may be formed in a selected region by a selective epitaxial growth (SEG) method. Thus, surface roughness of both ends of a Fabry Perot cavity formed of the silicon-crystalline germanium layer may be reduced or minimized, and a cutting process and a polishing process may be omitted in the method of fabricating the semiconductor laser device.
摘要翻译：本发明构思提供了半导体激光器件及其制造方法。根据该方法，可以通过选择性外延生长（SEG）法在选择的区域中形成用于发射激光的硅晶锗层。因此，可以减少或最小化由硅晶锗层形成的法布里珀罗腔的两端的表面粗糙度，并且在制造半导体激光器件的方法中可以省略切割工艺和抛光工艺。

3. 发明申请

US20120148244A1 OPTICAL NETWORK STRUCTURES FOR MULTI-CORE CENTRAL PROCESSOR UNIT 有权
标题翻译：多核心中央处理器单元的光网络结构
公开(公告)号：US20120148244A1
公开(公告)日：2012-06-14
申请号：US13302371
申请日：2011-11-22
申请人： Sahnggi PARK , Gyungock KIM , In Gyoo KIM , Jeong Woo PARK , Sang Hoon KIM , Do Won KIM
发明人： Sahnggi PARK , Gyungock KIM , In Gyoo KIM , Jeong Woo PARK , Sang Hoon KIM , Do Won KIM
IPC分类号： H04J14/02
CPC分类号： H04J14/028 , G02B6/12007 , H01S5/026 , H01S5/1032 , H01S5/4087 , H04J14/02 , H04J14/0201
摘要： Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed.
摘要翻译：提供了一种光网络结构。为了在CPU中配置数百个或更多个核心之间的光网络结构，不会发生波导之间的交叉，因此，光网络结构在所有核心之间实现双向通信，而光交换机不设置在交叉点。本发明使得能够使用硅光子学光学元件的单芯片光网络，并且可以开发配置有数百或数千个核的CPU芯片。

4. 发明申请

US20120156369A1 METHOD OF FORMING OPTICAL COUPLER 审中-公开
标题翻译：形成光耦合器的方法
公开(公告)号：US20120156369A1
公开(公告)日：2012-06-21
申请号：US13289743
申请日：2011-11-04
申请人： In Gyoo KIM , Sang Hoon KIM , Gyungock KIM
发明人： In Gyoo KIM , Sang Hoon KIM , Gyungock KIM
IPC分类号： G02B6/26
CPC分类号： G02B6/1228 , G02B6/12002 , G02B6/305
摘要： Provided are methods of forming an optical coupler. The method includes forming a first waveguide and an in-plane tapered layer on a silicon layer, forming a mask with first and second openings. The first opening is formed between the in-plane tapered layer and the second opening, and the second opening extends from the first opening with a gradually narrowing width. Thereafter, a planar waveguide and a three-dimensional tapered layer are simultaneously formed in the first and second openings, respectively. The planar waveguide has a substantially uniform thickness, and the three-dimensional tapered layer has a thickness gradually increasing with a decrease of the width thereof.
摘要翻译：提供了形成光耦合器的方法。该方法包括在硅层上形成第一波导和面内锥形层，形成具有第一和第二开口的掩模。第一开口形成在平面内锥形层和第二开口之间，第二开口从第一开口以逐渐变窄的宽度延伸。此后，分别在第一和第二开口中同时形成平面波导和三维锥形层。平面波导具有大致均匀的厚度，并且三维锥形层的厚度随着其宽度的减小而逐渐增加。

5. 发明申请

US20110133306A1 SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US20110133306A1
公开(公告)日：2011-06-09
申请号：US12788542
申请日：2010-05-27
申请人： In Gyoo KIM , Dae Seo Park , Jun Taek Hong , Gyungock Kim
发明人： In Gyoo KIM , Dae Seo Park , Jun Taek Hong , Gyungock Kim
IPC分类号： H01L29/06 , H01L21/762
CPC分类号： H01L21/7624 , H01L21/76243 , H01L21/76264 , H01L29/0657
摘要： Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.
摘要翻译：提供半导体器件及其形成方法。根据该方法，在半导体衬底中局部地形成第一掩埋氧化物层，并且通过在第一衬底上图案化半导体层来形成线形式的芯半导体图案，一对锚半导体图案和支撑半导体图案埋入氧化物层以暴露第一掩埋氧化物层。一对锚半导体图案分别接触芯半导体图案的两端，并且支撑半导体图案接触芯半导体图案的一个侧壁，去除芯半导体图案下方的第一掩埋氧化物层。此时，保留在半导体图案的每一个下面的第一掩埋氧化物层的一部分和位于载体半导体图案之下的第一掩埋氧化物层的一部分。形成第二掩埋氧化物层以填充在芯半导体图案之下的第一掩埋氧化物层的区域。

6. 发明申请

US20080151956A1 INTERBAND TUNNELING INTERSUBBAND TRANSITION SEMICONDUCTOR LASER 有权
公开(公告)号：US20080151956A1
公开(公告)日：2008-06-26
申请号：US11952408
申请日：2007-12-07
申请人： Gyungock KIM , In Gyoo KIM , Junghyung PYO , Ki Seok CHANG
发明人： Gyungock KIM , In Gyoo KIM , Junghyung PYO , Ki Seok CHANG
IPC分类号： H01S5/323
CPC分类号： H01S5/34 , B82Y20/00 , H01S5/3407 , H01S5/3416 , H01S5/3419 , H01S5/3422 , H01S5/34306
摘要： An interband resonant tunneling intersubband transition laser is disclosed, and includes a semiconductor substrate, and a first cladding layer, an active region structure layer and a second cladding layer formed on the semiconductor substrate. The active region structure layer includes quantum well layers and quantum barrier layers that are alternately stacked and have a broken energy bandgap. Thus, the interband resonant tunneling intersubband transition laser operates in a cascade mode in which an intersubband radiative transition and interband tunneling of carriers consecutively and repetitively occur in the active region structure layer, and thus can achieve a high output from a simple, compact structure.
摘要翻译：公开了一种带间谐振隧穿带间过渡激光器，并且包括半导体衬底和形成在半导体衬底上的第一覆层，有源区结构层和第二覆层。有源区结构层包括量子阱层和量子势垒层，其交替堆叠并具有破坏的能带隙。因此，带间共振隧穿带间过渡激光器以级联模式工作，其中载流子系统中的子带间辐射跃迁和带间隧穿在连续重复地发生在有源区结构层中，从而可以通过简单紧凑的结构实现高输出。

7. 发明申请

US20110136318A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING OPTICAL DEVICES 有权
标题翻译：制造具有光学器件的半导体器件的方法
公开(公告)号：US20110136318A1
公开(公告)日：2011-06-09
申请号：US12783216
申请日：2010-05-19
申请人： In Gyoo KIM , Dae Seo Park , Jun Taek Hong , Gyungock Kim
发明人： In Gyoo KIM , Dae Seo Park , Jun Taek Hong , Gyungock Kim
IPC分类号： H01L21/31
CPC分类号： G02B6/136 , G02B6/132 , G02F1/2257 , G02F2001/212 , G02F2203/15 , H01L27/1203
摘要： Provided is a method of manufacturing a semiconductor device. According to the method, a first buried oxide layer is formed in the semiconductor substrate in a first region, such that a first semiconductor layer is defined on the first buried oxide layer. An active portion is defined by forming a trench in the semiconductor substrate in a second region. A capping semiconductor pattern is formed on a top surface and an upper portion of a sidewall of the active portion. An oxide layer is formed by oxidizing the capping semiconductor pattern and an exposed lower portion of the sidewall of the active portion, such that the oxide layer surrounds a non-oxidized portion of the active portion. The non-oxidized portion of the active portion is a core and one end of the core is connected to a first optical device formed at the first semiconductor.
摘要翻译：提供一种制造半导体器件的方法。根据该方法，在第一区域中的半导体衬底中形成第一掩埋氧化物层，使得第一半导体层被限定在第一掩埋氧化物层上。通过在第二区域中在半导体衬底中形成沟槽来限定有源部分。在有源部分的侧壁的顶表面和上部形成封盖半导体图案。通过氧化覆盖半导体图案和有源部分的侧壁的暴露下部来形成氧化物层，使得氧化物层包围有源部分的未氧化部分。有源部分的未氧化部分是芯，并且芯的一端连接到形成在第一半导体处的第一光学器件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式