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1. 发明申请

US20150188290A1 INTERBAND CASCADE LASERS WITH ENGINEERED CARRIER DENSITIES 有权
标题翻译： INTERBAND CASCADE激光与工程承运人密度
公开(公告)号：US20150188290A1
公开(公告)日：2015-07-02
申请号：US14308768
申请日：2014-06-19
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , Chul Soo Kim , Mijin Kim , Charles D. Merritt
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , Chul Soo Kim , Mijin Kim , Charles D. Merritt
IPC分类号： H01S5/34 , H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/3401 , H01S5/3407 , H01S5/3422 , H01S5/34313
摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.
摘要翻译：提供了改善II型和I型ICL的性能的方法，特别是在中红外波长范围内。 II型或I型ICL的电子注入器可以被非常n掺杂以增加有源量子阱中的电子与空穴的比例，从而增加有源量子阱中的辐射复合的概率并降低阈值电流密度Jth需要实现激光。对于II型和I型ICL，掺杂应具有低1012范围内的薄片密度。在II型或I型的情况下，在一些实施例中，重掺杂可以集中在电子注入器的中量子阱中，而在其它实施例中，可以向有源量子阱移动掺杂硅。

2. 发明授权

US08879593B2 Epitaxial-side-down mounted high-power semiconductor lasers 有权
标题翻译：外延侧面安装的大功率半导体激光器
公开(公告)号：US08879593B2
公开(公告)日：2014-11-04
申请号：US13802887
申请日：2013-03-14
申请人： Chul Soo Kim , William W. Bewley , Mijin Kim , Charles D. Merritt , Chadwick Lawrence Canedy , Joshua Abell , Igor Vurgaftman , Jerry R. Meyer
发明人： Chul Soo Kim , William W. Bewley , Mijin Kim , Charles D. Merritt , Chadwick Lawrence Canedy , Joshua Abell , Igor Vurgaftman , Jerry R. Meyer
IPC分类号： H01S3/04 , H01S5/024 , H01S5/022 , H01S5/00 , H01S5/183 , H01S5/22
CPC分类号： H01S5/024 , H01S5/005 , H01S5/022 , H01S5/0224 , H01S5/02248 , H01S5/02268 , H01S5/02272 , H01S5/02469 , H01S5/183 , H01S5/22 , H01S2301/176
摘要： A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated with a heat-spreading material layer and are configured so that the maximum height of the posts is about the same as the maximum height of the laser structure. When the laser apparatus is mounted to a heat sink in an epi-down configuration using solder applied to the top of the laser structure and the at least one post, the channels between the at least one post and the laser structure provide a relief flow path for the solder and ensure that the laser structure does not come directly into contact with the solder.
摘要翻译：一种激光装置，其配置为在散热器上外延安装。激光装置包括半导体激光器结构和在基板上的至少一个柱，其中激光器结构和柱通过通道彼此分离。激光结构和柱可选地涂覆有热扩散材料层，并且构造成使得柱的最大高度与激光结构的最大高度大致相同。当使用施加到激光结构的顶部的焊料和至少一个柱将激光装置以外延形式安装到散热器时，至少一个支柱和激光结构之间的通道提供一个释放流动路径用于焊料，并确保激光器结构不会直接与焊料接触。

3. 发明授权

US09059570B1 Interband cascade lasers with engineered carrier densities 有权
标题翻译：具有工程载波密度的带间级联激光器
公开(公告)号：US09059570B1
公开(公告)日：2015-06-16
申请号：US14308768
申请日：2014-06-19
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , Chul Soo Kim , Mijin Kim , Charles D. Merritt
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , Chul Soo Kim , Mijin Kim , Charles D. Merritt
IPC分类号： H01S5/34 , H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/3401 , H01S5/3407 , H01S5/3422 , H01S5/34313
摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.
摘要翻译：提供了改善II型和I型ICL的性能的方法，特别是在中红外波长范围内。 II型或I型ICL的电子注入器可以被非常n掺杂以增加有源量子阱中的电子与空穴的比例，从而增加有源量子阱中的辐射复合的概率并降低阈值电流密度Jth需要实现激光。对于II型和I型ICL，掺杂应具有低1012范围内的薄片密度。在II型或I型的情况下，在一些实施例中，重掺杂可以集中在电子注入器的中量子阱中，而在其它实施例中，可以向有源量子阱移动掺杂硅。

4. 发明申请

US20130243020A1 Epitaxial-Side-Down Mounted High-Power Semiconductor Lasers 有权
标题翻译：外延侧面安装的大功率半导体激光器
公开(公告)号：US20130243020A1
公开(公告)日：2013-09-19
申请号：US13802887
申请日：2013-03-14
申请人： Chul Soo Kim , William W. Bewley , Mijin Kim , Charles D. Merritt , Chadwick Lawrence Canedy , Joshua Abell , Igor Vurgaftman , Jerry R. Meyer
发明人： Chul Soo Kim , William W. Bewley , Mijin Kim , Charles D. Merritt , Chadwick Lawrence Canedy , Joshua Abell , Igor Vurgaftman , Jerry R. Meyer
IPC分类号： H01S5/024 , H01S5/022
CPC分类号： H01S5/024 , H01S5/005 , H01S5/022 , H01S5/0224 , H01S5/02248 , H01S5/02268 , H01S5/02272 , H01S5/02469 , H01S5/183 , H01S5/22 , H01S2301/176
摘要： A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated with a heat-spreading material layer and are configured so that the maximum height of the posts is about the same as the maximum height of the laser structure. When the laser apparatus is mounted to a heat sink in an epi-down configuration using solder applied to the top of the laser structure and the at least one post, the channels between the at least one post and the laser structure provide a relief flow path for the solder and ensure that the laser structure does not come directly into contact with the solder.
摘要翻译：一种激光装置，其配置为在散热器上外延安装。激光装置包括半导体激光器结构和在基板上的至少一个柱，其中激光器结构和柱通过通道彼此分离。激光结构和柱可选地涂覆有热扩散材料层，并且构造成使得柱的最大高度与激光结构的最大高度大致相同。当使用施加到激光结构的顶部的焊料和至少一个柱将激光装置以外延形式安装到散热器时，至少一个支柱和激光结构之间的通道提供一个释放流动路径用于焊料，并确保激光器结构不会直接与焊料接触。

5. 发明授权

US08798111B2 Interband cascade lasers with engineered carrier densities 有权
标题翻译：具有工程载波密度的带间级联激光器
公开(公告)号：US08798111B2
公开(公告)日：2014-08-05
申请号：US13422309
申请日：2012-03-16
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , ChulSoo Kim , Mijin Kim , Charles D. Merritt
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , ChulSoo Kim , Mijin Kim , Charles D. Merritt
IPC分类号： H01S5/34 , H01S5/30
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/3401 , H01S5/3407 , H01S5/3422 , H01S5/34313
摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.
摘要翻译：提供了改善II型和I型ICL的性能的方法，特别是在中红外波长范围内。 II型或I型ICL的电子注入器可以被非常n掺杂以增加有源量子阱中的电子与空穴的比例，从而增加有源量子阱中的辐射复合的概率并降低阈值电流密度Jth需要实现激光。对于II型和I型ICL，掺杂应具有低1012范围内的薄片密度。在II型或I型的情况下，在一些实施例中，重掺杂可以集中在电子注入器的中量子阱中，而在其它实施例中，可以向有源量子阱移动掺杂硅。

6. 发明申请

US20120269221A1 Interband Cascade Lasers with Engineered Carrier Densities 有权
标题翻译：带有工程载波密度的带间级联激光器
公开(公告)号：US20120269221A1
公开(公告)日：2012-10-25
申请号：US13422309
申请日：2012-03-16
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , ChulSoo Kim , Mijin Kim , Charles D. Merritt
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , ChulSoo Kim , Mijin Kim , Charles D. Merritt
IPC分类号： H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/3401 , H01S5/3407 , H01S5/3422 , H01S5/34313
摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.
摘要翻译：提供了改善II型和I型ICL的性能的方法，特别是在中红外波长范围内。 II型或I型ICL的电子注入器可以被非常n掺杂以增加有源量子阱中的电子与空穴的比例，从而增加有源量子阱中的辐射复合的概率并降低阈值电流密度Jth需要实现激光。对于II型和I型ICL，掺杂应具有低1012范围内的薄片密度。在II型或I型的情况下，在一些实施例中，重掺杂可以集中在电子注入器的中量子阱中，而在其它实施例中，可以向有源量子阱移动掺杂硅。

7. 发明授权

US5568496A Laser optics protective device 失效
标题翻译：激光光学保护装置
公开(公告)号：US5568496A
公开(公告)日：1996-10-22
申请号：US351070
申请日：1994-11-30
申请人： Brian L. Justus , Alan L. Huston , Anthony J. Campillo , Charles D. Merritt
发明人： Brian L. Justus , Alan L. Huston , Anthony J. Campillo , Charles D. Merritt
IPC分类号： H01S3/23 , H01S3/10
CPC分类号： H01S3/2308 , H01S3/0064 , Y10S372/703
摘要： A broadband thermal optical limiter disposed between a laser oscillator and laser amplifier system for protecting optical components in the laser oscillator from damage due to amplified optical feedback from the laser amplifier system at all near ultraviolet, visible and near infrared wavelengths is disclosed. The thermal optical limiter comprises: a first lens for focusing the amplified optical feedback to a focal point on an optical axis; a flowing dye cell disposed near the focal point and being responsive to the focused amplified optical feedback for thermally defocusing and aberrating the focused amplified optical feedback into a plurality of rings about the optical axis; a second lens for passing only a small portion of the defocused amplified optical feedback; and a blocking aperture disposed around the second lens for blocking substantially all of the thermally defocused amplified optical feedback from the flowing dye cell and passing therethrough into the second lens only a small portion of the thermally defocused amplified optical feedback from the flowing dye cell.
摘要翻译：公开了一种布置在激光振荡器和激光放大器系统之间的宽带热光学限制器，用于保护激光振荡器中的光学部件免受来自激光放大器系统在所有近紫外，可见光和近红外波长处的光反馈的损害。热光学限制器包括：用于将放大的光学反馈聚焦到光轴上的焦点的第一透镜; 流动的染料单元，设置在焦点附近并且响应于聚焦放大的光学反馈，用于热聚焦并使聚焦的放大的光学反馈异像到围绕光轴的多个环中; 用于仅通过散焦放大光学反馈的一小部分的第二透镜; 以及设置在第二透镜周围的阻挡孔，用于阻挡来自流动的染料单元的基本上所有的热散焦的放大的光学反馈，并将其从第二透镜中流出，只有来自流动的染料单元的热散焦放大的光学反馈的一小部分。

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