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    • 10. 发明专利
    • PRODUCTION OF COMPOUND SEMICONDUCTOR CRYSTAL AND DEVICE THEREFOR
    • JPH08301696A
    • 1996-11-19
    • JP10768795
    • 1995-05-01
    • SEMICONDUCTOR RES FOUNDTOHOKU STEEL
    • NISHIZAWA JUNICHIEHATA TAKASHISAWAFUJI YUTAKA
    • C30B11/00C30B29/40H01L21/208
    • PURPOSE: To inexpensively obtain a high-purity and high-quality III-V group compound polycrystal by cooling a crucible after the amount of a group V raw material in a vapor pressure control part is decreased in a specific state by an amount to form a compound with a group III raw material in a crucible. CONSTITUTION: A vapor pressure in a sealed tube is gradually raised while heating a melt in a crucible so as not to raise the temperature at the wall of the sealed quartz tube too high more than a temperature for maintaining the vapor pressure of the group V raw material in the sealed tube at a fixed pressure. Then, synthetic reaction is promoted by making the vapor pressure in the sealed tube into a proper pressure higher than the equilibrium vapor pressure of a group V element in a compound. After the melt of the compound is formed, it is solidified from the lower end of the crucible at a proper rate to give the objective semiconductor polycrystal. Since the temperature at the wall of the sealed quartz tube can be reduced to a mush lower temperature than the softening point of crucible in the production method, Si contamination is extremely lessened and the sealed tube will not cause plastic deformation even if difference in pressure between the inside and outside of the sealed tube is generated.