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1. 发明申请

WO2014020459A1 WATER-DISPERSIBLE ELECTRICALLY CONDUCTIVE FLUORINE-CONTAINING POLYANILINE COMPOSITIONS FOR LITHOGRAPHY 审中-公开
标题翻译：含水电导液含氟聚合物组合物
公开(公告)号：WO2014020459A1
公开(公告)日：2014-02-06
申请号：PCT/IB2013/055097
申请日：2013-06-21
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , SHIN-ETSU CHEMICAL CO,. LTD. , IBM UNITED KINGDOM LIMITED , IBM (CHINA) INVESTMENT COMPANY LIMITED
发明人： SOORIYAKUMARAN, Ratnam , BOZANO, LUISA, Dominica , SUNDBERG, Linda, Karin , SHERWOOD, Mark, Hull , NAGASAWA, Takayuki , WATANABE, Satoshi
IPC分类号： C08L79/02
CPC分类号： G03F7/2059 , C08G73/0266 , C08L25/18 , C08L79/02 , C08L79/08 , C09D179/08 , G03F7/11 , G03F7/38 , H01B1/128
摘要： A water dispersible composition comprises a polyaniline copolymer having a weight average molecular weight of at least 30,000 and a polymeric acid comprising sulfonic acid groups. The polyaniline copolymer comprises i) about 10 mol% to about 15 mol% of a fluorine- containing first aniline repeat unit based on total moles of repeat units in the polyaniline copolymer, and ii) a second aniline repeat unit comprising no fluorine. The sulfonic acid groups of the polymeric acid are present in a molar amount greater than or equal to total moles of repeat units of the polyaniline copolymer. The composition has a conductivity of at least 0.0001 S/cm.
摘要翻译：水分散性组合物包含重均分子量为至少30,000的聚苯胺共聚物和包含磺酸基团的聚合酸。聚苯胺共聚物包括i）基于聚苯胺共聚物中的重复单元的总摩尔数的约10mol％至约15mol％的含氟第一苯胺重复单元，以及ii）不包含氟的第二苯胺重复单元。聚合酸的磺酸基存在的摩尔量大于或等于聚苯胺共聚物的重复单元的总摩尔数。该组合物具有至少0.0001S / cm的电导率。

2. 发明申请

WO2013190406A1 ORGANIC SOLVENT DEVELOPABLE PHOTORESIST COMPOSITION 审中-公开
标题翻译：有机溶剂发展光电组合物
公开(公告)号：WO2013190406A1
公开(公告)日：2013-12-27
申请号：PCT/IB2013/054296
申请日：2013-05-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , IBM (CHINA) INVESTMENT COMPANY LIMITED
发明人： VORA, Ankit , SUNDBERG, Linda, Karin , SOORIYAKUMARAN, Ratnam
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/325 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/0758
摘要： Provided is a hydrophobic negative tone developable (NTD) resist composition comprising (a) a hydrophobic polymer having (i) at least one nonpolar acid-stable group; and (ii) at least one nonpolar acid-labile group, and (b) a photoacid generator (PAG) that may or may not be bound to the polymer, wherein a nonpolar aromatic or aliphatic organic hydrocarbon solvent is used to develop the unexposed regions of the NTD resist film and the resist film is not developable in an aqueous base developer, such as 0.26 N TMAH.
摘要翻译：本发明提供一种疏水性阴离子可显影（NTD）抗蚀剂组合物，其包含（a）疏水性聚合物，其具有（i）至少一种非极性酸稳定基团; 和（ii）至少一个非极性酸不稳定基团，和（b）可以或不结合聚合物的光酸产生剂（PAG），其中使用非极性芳族或脂族有机烃溶剂来显影未曝光区域的NTD抗蚀剂膜和抗蚀剂膜不能在碱性显影液中显影，例如0.26N TMAH。

3. 发明申请

WO2016071785A1 ADHESIVE RESINS FOR WAFER BONDING 审中-公开
标题翻译：用于粘结粘合剂的粘合树脂
公开(公告)号：WO2016071785A1
公开(公告)日：2016-05-12
申请号：PCT/IB2015/057910
申请日：2015-10-15
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , IBM JAPAN LIMITED
发明人： GELORME, Jeffrey , HUNG, Li-Wen , ALLEN, Robert, David , SUNDBERG, Linda, Karin , SOORIYAKUMARAN, Ratnam
IPC分类号： H01L21/304 , C09J5/00 , C09J125/04 , C09J133/00 , H01L21/02
CPC分类号： C09J129/10 , C08F212/08 , C09J125/08 , C09J133/06 , H01L21/50 , H01L21/6835 , H01L2221/68318 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , Y02P20/582 , C08F222/40 , C08F222/06 , C08F2222/402
摘要： A method for adhesive bonding in microelectronic device processing is provided that includes bonding a handling wafer to a front side of a device wafer with an adhesive of hydroxystyrene homo polymer and hydroxystyrene acrylate copolymer, styrene maleimide copolymers, or acrylate copolymer; and thinning the device wafer from the backside of the device wafer while the device wafer is adhesively engaged to the handling wafer. After the device wafer has been thinned, the adhesive comprising phenoxy resin may be removed by laser debonding, wherein the device wafer is separated from the handling wafer.
摘要翻译：提供了一种微电子器件处理中的粘合方法，其包括使用羟基苯乙烯均聚物和羟基苯乙烯丙烯酸酯共聚物，苯乙烯马来酰亚胺共聚物或丙烯酸酯共聚物的粘合剂将处理晶片接合到器件晶片的前侧; 以及当器件晶片与处理晶片粘合地接合时，从器件晶片的背面使器件晶片变薄。在器件晶片减薄之后，可以通过激光剥离除去包含苯氧基树脂的粘合剂，其中将器件晶片与处理晶片分离。

4. 发明申请

WO2011054572A1 SILICON CONTAINING COATING COMPOSITIONS AND METHODS OF USE 审中-公开
标题翻译：含硅的涂料组合物和使用方法
公开(公告)号：WO2011054572A1
公开(公告)日：2011-05-12
申请号：PCT/EP2010/063420
申请日：2010-09-14
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , SOORIYAKUMARAN, Ratnam , ALLEN, Robert, David , BROCK, Phillip, Joe , SWANSON, Sally, Ann , TRUONG, Hoa , CHEN, Kuang-Jung , HUANG, Wu-Song , FRIZ, Alexander
发明人： SOORIYAKUMARAN, Ratnam , ALLEN, Robert, David , BROCK, Phillip, Joe , SWANSON, Sally, Ann , TRUONG, Hoa , CHEN, Kuang-Jung , HUANG, Wu-Song , FRIZ, Alexander
IPC分类号： C09D143/04 , G03F7/075 , G03F7/00
CPC分类号： C09D143/04 , G03F7/0392 , G03F7/0397 , G03F7/0758 , G03F7/094 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： Coating compositions include a polymer including (I) wherein R 1 is a silicon containing moiety, R 2 is an acid stable lactone functionality, and R 3 is an acid labile lactone functionality; X 1 , X 2 , X 3 are independently H or CH 3 ; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
摘要翻译：涂料组合物包括包含（I）的聚合物，其中R1是含硅部分，R2是酸稳定的内酯官能团，R3是酸不稳定的内酯官能团; X 1，X 2，X 3独立地为H或CH 3; 并且m和o是非零正整数，n是0或表示重复单元数的正整数; 光致酸发生器; 和溶剂。还公开了在含有该图案的涂料组合物中形成图案的方法。

5. 发明申请

WO2016038476A1 NEGATIVE-TONE RESIST COMPOSITIONS AND MULTIFUNCTIONAL POLYMERS THEREIN 审中-公开
标题翻译：负极性组合物和多功能聚合物
公开(公告)号：WO2016038476A1
公开(公告)日：2016-03-17
申请号：PCT/IB2015/055621
申请日：2015-07-24
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , SHIN-ETSU CHEMICAL CO., LTD , IBM UNITED KINGDOM LIMITED , IBM JAPAN LIMITED
发明人： SOORIYAKUMARAN, Ratnam , SUNDBERG, Linda, Karin , SANCHEZ, Martha, Inez , BOZANO, Luisa, Dominica , SANDERS, Daniel, Paul , WATANABE, Satoshi , MASUNAGA, Keiichi , DOMON, Daisuke , KAWAI, Yoshio
IPC分类号： G03F7/004 , G03F7/038
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/322 , C08F212/14 , C08F2220/382
摘要： A negative-tone resist composition is provided that contains a free photoacid generator and a multifunctional polymer covalently bound to a photoacid-generating moiety, where the composition is substantially free of cross-linking agents. Multifunctional polymers useful in conjunction with the resist composition are also provided, as is a process for generating a resist image on a substrate using the present compositions and polymers.
摘要翻译：提供了一种负色调抗蚀剂组合物，其包含游离的光致酸产生剂和共价结合于产生光致酸的部分的多官能聚合物，其中组合物基本上不含交联剂。还提供了与抗蚀剂组合物结合使用的多官能聚合物，以及使用本发明组合物和聚合物在基材上产生抗蚀剂图像的方法。

6. 发明申请

WO2011057832A1 PHOTO-PATTERNABLE DIELECTRIC MATERIALS AND FORMULATIONS AND METHODS OF USE 审中-公开
标题翻译：光电导电材料及其制备方法和使用方法
公开(公告)号：WO2011057832A1
公开(公告)日：2011-05-19
申请号：PCT/EP2010/062243
申请日：2010-08-23
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , NELSON, Alshakim , BROCK, Phillip, Joe , SOORIYAKUMARAN, Ratnam , DAVIS, Blake , MILLER, Robert, Dennis , ALLEN, Robert, David , LIN, Qinghuang
发明人： NELSON, Alshakim , BROCK, Phillip, Joe , SOORIYAKUMARAN, Ratnam , DAVIS, Blake , MILLER, Robert, Dennis , ALLEN, Robert, David , LIN, Qinghuang
IPC分类号： C09D183/04 , C09D183/14 , H01L21/312
CPC分类号： H05K1/0326 , C09D183/04 , C09D183/14 , H01B3/307 , H01L21/02126 , H01L21/02216 , H01L21/3122 , H01L21/76802 , H01L21/76808 , H01L21/76814 , H05K2201/0162
摘要： Silsesquioxane polymers, silsesquioxane polymers in negative tone photo-patternable dielectric formulations, methods of forming structures using negative tone photo-patternable dielectric formulations containing silsesquioxane polymers, and structures made from silsesquioxane polymers.
摘要翻译：倍半硅氧烷聚合物，负色调可光图案化电介质配方中的倍半硅氧烷聚合物，使用含有倍半硅氧烷聚合物的负色调可光图案化电介质配方形成结构的方法，以及由倍半硅氧烷聚合物制成的结构。

7. 发明申请

WO2010025983A1 LOW OUTGASSING PHOTORESIST COMPOSITIONS 审中-公开
标题翻译：低出口光电组成
公开(公告)号：WO2010025983A1
公开(公告)日：2010-03-11
申请号：PCT/EP2009/059160
申请日：2009-07-16
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , SOORIYAKUMARAN, Ratnam , TRUONG, Hoa , DIPIETRO, Richard, Anthony , SWANSON, Sally, Ann
发明人： SOORIYAKUMARAN, Ratnam , TRUONG, Hoa , DIPIETRO, Richard, Anthony , SWANSON, Sally, Ann
IPC分类号： C08F36/20 , G03F7/09
CPC分类号： G03F7/0392 , C08F12/20 , C08F12/22 , C08F12/24 , C08F12/32 , C08F212/14 , C08F212/32 , C08F220/28 , C09D125/18 , G03F7/0046 , G03F7/0382 , Y10S430/106 , Y10S430/114
摘要： Polymers for use in photoresist compositions include a repeat unit having a formula of (II) wherein Z represents a repeat unit of a polymer backbone; X is a linking group selected from the group consisting of alkylene, arylene, araalkylene, carbonyl, carboxyl, carboxyalkylene, oxy, oxyalkylene, and combinations thereof, and R is selected from the group consisting of hydrogen, alkyl, aryl, and cycloalkyl groups with the proviso that X and R are not part of the same ring system. Also disclosed are processes for patterning a relief image of the photoresist composition, wherein the photoresist composition has an outgassing rate of less than 6.5E+14 molecules/cm 2 /s.
摘要翻译：用于光致抗蚀剂组合物的聚合物包括具有式（II）的重复单元，其中Z表示聚合物主链的重复单元; X是选自亚烷基，亚芳基，亚芳基，羰基，羧基，羧基亚烷基，氧基，氧化烯及其组合的连接基团，R选自氢，烷基，芳基和环烷基，条件是X和R不是相同环系的一部分。还公开了用于图案化光致抗蚀剂组合物的浮雕图像的方法，其中光致抗蚀剂组合物具有小于6.5E + 14分子/ cm 2 / s的除气速率。

8. 发明申请

WO2007039346A3 LOW ACTIVATION ENERGY DISSOLUTION MODIFICATION AGENTS FOR PHOTORESIST APPLICATIONS 审中-公开
公开(公告)号：WO2007039346A3
公开(公告)日：2007-04-12
申请号：PCT/EP2006/065528
申请日：2006-08-21
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , ALLEN, Robert, David , DIPIETRO, Richard, Anthony , TRUONG, Hoa , BROCK, Phillip, Joe , SOORIYAKUMARAN, Ratnam
发明人： ALLEN, Robert, David , DIPIETRO, Richard, Anthony , TRUONG, Hoa , BROCK, Phillip, Joe , SOORIYAKUMARAN, Ratnam
IPC分类号： G03F7/004 , G03F7/039 , C07J9/00 , C07J17/00
摘要： A photoresist composition including a polymer, a photoacid generator and a dissolution modification agent, a method of forming an image using the photoresist composition and the dissolution modification agent composition. The dissolution modification agent is insoluble in aqueous alkaline developer and inhibits dissolution of the polymer in the developer until acid is generated by the photoacid generator being exposed to actinic radiation, whereupon the dissolution modifying agent, at a suitable temperature, becomes soluble in the developer and allows the polymer to dissolve in the developer. The DMAs are glucosides, cholates, citrates and adamantanedicarboxylates protected with acid-labile ethoxyethyl, tetrahydrofuranyl, and angelicalactonyl groups.

9. 发明申请

WO2014171984A2 SILICON-CONTAINING ANTIREFLECTIVE COATINGS INCLUDING NON-POLYMERIC SILSESQUIOXANES 审中-公开
标题翻译：含硅防反射涂层，包括非聚合物SILESQUIOXANES
公开(公告)号：WO2014171984A2
公开(公告)日：2014-10-23
申请号：PCT/US2014/012624
申请日：2014-01-23
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , SHIN-ETSU CHEMICAL CO., LTD.
发明人： GLODDE, Martin , HUANG, Wu-song , PEREZ, Javier , SOORIYAKUMARAN, Ratnam , KINSHO, Takeshi , OGIHARA, Tsutomu , TACHIBANA, Seiichiro , UEDA, Takafumi
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0751 , G03F7/0755 , G03F7/091 , G03F7/325
摘要： Embodiments include a silicon-containing antireflective material including a silicon- containing base polymer, a non-polymeric silsesquioxane material, and a photoacid generator. The silicon-containing base polymer may contain chromophore moieties, transparent moieties, and reactive sites on an SiO x background, where x ranges from approximately 1 to approximately 2. Exemplary non-polymeric silsesquioxane materials include polyhedral oligomeric silsesquioxanes having acid labile side groups linked to hydrophilic groups Exemplary acid labile side groups may include tertiary alkyl carbonates, tertiary alkyl esters, tertiary alkyl ethers, acetals and ketals, Exemplary hydrophilic groups may include phenols, alcohols, carboxylic acids, amides, and sulfonamides. Embodiments further include lithographic structures including an organic anti-reflective layer, the above-described silicon-containing anti-reflective layer above the organic anti-reflective layer, and a photoresist layer above the above-described silicon-containing anti-reflective layer. Embodiments further include a method of forming a lithographic structure utilizing the above-described silicon-containing anti- reflective layer.
摘要翻译：实施方案包括含硅抗反射材料，其包含含硅基础聚合物，非聚合物倍半硅氧烷材料和光酸产生剂。含硅基础聚合物可以在SiO x背景上含有发色团部分，透明部分和反应位点，其中x范围从约1至约2.示例性非聚合物倍半硅氧烷材料包括多面体低聚倍半硅氧烷具有与亲水基团连接的酸不稳定侧基示例性的酸不稳定侧基可以包括叔烷基碳酸酯，叔烷基酯，叔烷基醚，缩醛和缩酮。示例性的亲水基团可以包括酚，醇，羧酸，酰胺和磺酰胺。实施例还包括光刻结构，其包括有机抗反射层，在有机抗反射层上方的上述含硅抗反射层以及在上述含硅抗反射层上方的光致抗蚀剂层。实施例还包括利用上述含硅抗反射层形成光刻结构的方法。

10. 发明申请

WO2005040918A2 LOW-ACTIVATION ENERGY SILICON-CONTAINING RESIST SYSTEM 审中-公开
标题翻译：低活性能含硅电阻系统
公开(公告)号：WO2005040918A2
公开(公告)日：2005-05-06
申请号：PCT/US2004/035253
申请日：2004-10-22
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , HUANG, Wu-Song , ALLEN, Robert, D. , ANGELOPOULOS, Marie , KWONG, Ranee, W. , SOORIYAKUMARAN, Ratnam
发明人： HUANG, Wu-Song , ALLEN, Robert, D. , ANGELOPOULOS, Marie , KWONG, Ranee, W. , SOORIYAKUMARAN, Ratnam
IPC分类号： G03F
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046
摘要： Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193nm and 157nm.
摘要翻译：提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅烷倍半硅氧烷聚合物含有侧链溶解性抑制酸不稳定部分，用于酸催化裂解的活化能和高光密度部分的存在被最小化或避免。本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。本发明的聚合物在正性抗蚀剂组合物中特别有用。本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。

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