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1. 发明申请

WO2011054572A1 SILICON CONTAINING COATING COMPOSITIONS AND METHODS OF USE 审中-公开
标题翻译：含硅的涂料组合物和使用方法
公开(公告)号：WO2011054572A1
公开(公告)日：2011-05-12
申请号：PCT/EP2010/063420
申请日：2010-09-14
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , SOORIYAKUMARAN, Ratnam , ALLEN, Robert, David , BROCK, Phillip, Joe , SWANSON, Sally, Ann , TRUONG, Hoa , CHEN, Kuang-Jung , HUANG, Wu-Song , FRIZ, Alexander
发明人： SOORIYAKUMARAN, Ratnam , ALLEN, Robert, David , BROCK, Phillip, Joe , SWANSON, Sally, Ann , TRUONG, Hoa , CHEN, Kuang-Jung , HUANG, Wu-Song , FRIZ, Alexander
IPC分类号： C09D143/04 , G03F7/075 , G03F7/00
CPC分类号： C09D143/04 , G03F7/0392 , G03F7/0397 , G03F7/0758 , G03F7/094 , G03F7/11 , G03F7/2041 , G03F7/40
摘要： Coating compositions include a polymer including (I) wherein R 1 is a silicon containing moiety, R 2 is an acid stable lactone functionality, and R 3 is an acid labile lactone functionality; X 1 , X 2 , X 3 are independently H or CH 3 ; and m and o are non-zero positive integers and n is zero or a positive integer representing the number of repeat units; a photoacid generator; and a solvent. Also disclosed are methods for forming a pattern in the coating composition containing the same.
摘要翻译：涂料组合物包括包含（I）的聚合物，其中R1是含硅部分，R2是酸稳定的内酯官能团，R3是酸不稳定的内酯官能团; X 1，X 2，X 3独立地为H或CH 3; 并且m和o是非零正整数，n是0或表示重复单元数的正整数; 光致酸发生器; 和溶剂。还公开了在含有该图案的涂料组合物中形成图案的方法。

2. 发明申请

WO2009074522A1 PHOTORESIST COMPOSITIONS AND METHOD FOR MULTIPLE EXPOSURES WITH MULTIPLE LAYER RESIST SYSTEMS 审中-公开
标题翻译：多层耐蚀系统多光照的组合物和方法
公开(公告)号：WO2009074522A1
公开(公告)日：2009-06-18
申请号：PCT/EP2008/066915
申请日：2008-12-05
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , CHEN, Kuang-Jung , LI, Wai-Kin , HUANG, Wu-Song , VARANASI, Pushkara , LIU, Sen
发明人： CHEN, Kuang-Jung , LI, Wai-Kin , HUANG, Wu-Song , VARANASI, Pushkara , LIU, Sen
IPC分类号： G03F7/004 , G03F7/039 , G03F7/40
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/40
摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.
摘要翻译：一种方法和抗蚀剂组合物。抗蚀剂组合物包括具有内酯部分的重复单元的聚合物，能够产生碱的热碱发生剂和感光酸产生剂。聚合物具有基本上可溶于第一溶剂并在加热聚合物之后基本上不溶的性质。该方法包括形成包含聚合物的光致抗蚀剂膜，能够释放碱的热碱发生器，光敏酸产生剂和溶剂。该影片被图案化成像。成像包括将膜暴露于辐射，导致产生酸催化剂。该膜在水性碱中显影，导致去除碱溶性区域并形成图案层。图案化层被烘烤高于该温度，导致热基发生器释放图案化层内的基底，并且图案化层变得不溶于溶剂。

3. 发明申请

WO2009087029A1 MULTIPLE EXPOSURE PHOTOLITHOGRAPHY METHODS AND PHOTORESIST COMPOSITIONS 审中-公开
标题翻译：多次曝光光刻方法和光刻胶组合物
公开(公告)号：WO2009087029A1
公开(公告)日：2009-07-16
申请号：PCT/EP2008/067736
申请日：2008-12-17
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , HUANG, Wu-Song , LIU, Sen , CHEN, Kuang-Jung , KWONG, Ranee Wai-Ling
发明人： HUANG, Wu-Song , LIU, Sen , CHEN, Kuang-Jung , KWONG, Ranee Wai-Ling
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20
CPC分类号： G03F7/038 , G03F7/0045 , G03F7/0382 , G03F7/0392 , G03F7/095 , G03F7/20 , G03F7/2022 , G03F7/30 , G03F7/38 , G03F7/70466 , Y10S430/12
摘要： A method and a composition. The composition includes a polymer and a photosensitive acid generator capable of generating a first amount of acid upon exposure to a first dose of radiation and a second amount of acid upon exposure to a second dose of radiation. The second amount of acid is greater than said first amount of acid. The second dose is greater than the first dose. The composition includes a photosensitive base generator capable of generating a first amount of base upon exposure to the first dose and a second amount of base upon exposure to the second dose, where the first amount of base is greater than the first amount of acid and the second amount of base is less than the second amount of acid. A method for exposing to radiation a film of a photoresist on a substrate is included.
摘要翻译：方法和组成。组合物包括聚合物和感光酸产生剂，其能够在暴露于第一剂量的辐射时产生第一量的酸，并且在暴露于第二剂量的辐射时能够产生第二量的酸。第二量的酸大于所述第一量的酸。第二剂量大于第一剂量。所述组合物包括能够在暴露于第一剂量时产生第一量碱的光敏碱产生剂，以及暴露于第二剂量时第二量的碱，其中第一量的碱大于第一量的酸，碱的第二量少于第二量的酸。包括用于在基板上暴露于光致抗蚀剂的膜的方法。

4. 发明申请

WO2005040918A2 LOW-ACTIVATION ENERGY SILICON-CONTAINING RESIST SYSTEM 审中-公开
标题翻译：低活性能含硅电阻系统
公开(公告)号：WO2005040918A2
公开(公告)日：2005-05-06
申请号：PCT/US2004/035253
申请日：2004-10-22
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , HUANG, Wu-Song , ALLEN, Robert, D. , ANGELOPOULOS, Marie , KWONG, Ranee, W. , SOORIYAKUMARAN, Ratnam
发明人： HUANG, Wu-Song , ALLEN, Robert, D. , ANGELOPOULOS, Marie , KWONG, Ranee, W. , SOORIYAKUMARAN, Ratnam
IPC分类号： G03F
CPC分类号： G03F7/0757 , G03F7/0045 , G03F7/0046
摘要： Inventive silsesquioxane polymers are provided, and resist compositions that contain such silsesquioxane polymers are provided in which at least a portion of the silsesquioxane polymer contains fluorinated moieties, and at least a portion of the silisesquioxane polymer contains pendant solubility inhibiting acid-labile moieties that have low activation energy for acid-catalyzed cleaving, and the presence of high optical density moieties are minimized or avoided. The inventive polymer also contains pendant polar moieties that promote alkaline solubility of the resist in aqueous alkaline solutions. The inventive polymers are particularly useful in positive resist compositions. The invention encompasses methods of using such resist compositions in forming a patterned structure on a substrate, and particularly multilayer (e.g. bilayer) photolithographic methods, which methods are capable of producing high resolution images at wavelengths such as 193nm and 157nm.
摘要翻译：提供了本发明的倍半硅氧烷聚合物，并且提供了含有这种倍半硅氧烷聚合物的抗蚀剂组合物，其中至少一部分倍半硅氧烷聚合物含有氟化部分，并且至少一部分硅烷倍半硅氧烷聚合物含有侧链溶解性抑制酸不稳定部分，用于酸催化裂解的活化能和高光密度部分的存在被最小化或避免。本发明的聚合物还含有侧链极性部分，其促进抗蚀剂在碱性水溶液中的碱溶性。本发明的聚合物在正性抗蚀剂组合物中特别有用。本发明包括使用这种抗蚀剂组合物在基底上形成图案化结构的方法，特别是多层（例如双层）光刻方法，该方法能够在诸如193nm和157nm的波长下产生高分辨率图像。

5. 发明申请

WO2008049844A1 HIGH RESOLUTION IMAGING PROCESS USING AN IN-SITU IMAGE MODIFYING LAYER 审中-公开
标题翻译：使用原位图像修改层的高分辨率成像处理
公开(公告)号：WO2008049844A1
公开(公告)日：2008-05-02
申请号：PCT/EP2007/061360
申请日：2007-10-23
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , AZPIROZ, Jaione, Tirapu , HUANG, Wu-Song , LAWSON, Margaret , PATEL, Kaushal
发明人： AZPIROZ, Jaione, Tirapu , HUANG, Wu-Song , LAWSON, Margaret , PATEL, Kaushal
IPC分类号： G03F7/095 , G03F1/10
CPC分类号： G03F7/095 , G03F1/56 , G03F7/70466
摘要： A method of forming a patterned material layer on a substrate. A photoresist layer is formed on the substrate followed by an image modifying material formed on the photoresist. The image modifying material is patterned to form an image modifying pattern. The image modifying pattern and underlying photoresist are then exposed to suitable radiation. The image modifying pattern modifies the image intensity within the photoresist layer beneath the image modifying pattern. The resulting pattern is then transferred into the substrate.
摘要翻译：一种在衬底上形成图案化材料层的方法。在基底上形成光致抗蚀剂层，随后在光致抗蚀剂上形成图像改性材料。图像修改材料被图案化以形成图像修改图案。然后将图像改变图案和下面的光致抗蚀剂暴露于合适的辐射。图像修改图案修改图像修改图案下面的光致抗蚀剂层内的图像强度。然后将得到的图案转移到基底中。

6. 发明申请

WO2007042348A1 TOP ANTIREFLECTIVE COATING COMPOSITION WITH LOW REFRACTIVE INDEX AT 193NM RADIATION WAVELENGTH 审中-公开
标题翻译：顶部抗反射涂层组合物，具有193NM辐射波长处的低折射率
公开(公告)号：WO2007042348A1
公开(公告)日：2007-04-19
申请号：PCT/EP2006/065877
申请日：2006-08-31
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , HUANG, Wu-Song , HEATH, William , PATEL, Kaushal , VARANASI, Pushkara
发明人： HUANG, Wu-Song , HEATH, William , PATEL, Kaushal , VARANASI, Pushkara
IPC分类号： G03F7/09
CPC分类号： G03F7/091 , Y10S438/952
摘要： Compositions characterized by the presence of an aqueous base-soluble polymer having aromatic moieties and a refractive index value n of less than 1.5 with respect to a radiation wavelength of 193nm have been found which are especially useful as top antireflective coatings in 193nm dry lithographic processes. Polymers with an ethylenic backbone and having fluorine and sulfonic acid moieties have been found to be especially useful. The compositions enable top reflection control at 193nm while providing ease of use by virtue of their solubility in aqueous alkaline developer solutions.
摘要翻译：已经发现特征在于具有相对于193nm的辐射波长的具有芳香部分和折射率值n小于1.5的水溶性碱溶性聚合物的组合物，其在193nm干法光刻工艺中特别可用作顶部抗反射涂层。已经发现具有乙烯主链并具有氟和磺酸部分的聚合物是特别有用的。该组合物能够在193nm的顶部反射控制，同时由于其在含水碱性显影剂溶液中的溶解度而提供易于使用。

7. 发明申请

WO2012067755A3 PHOTORESIST COMPOSITION FOR NEGATIVE DEVELOPMENT AND PATTERN FORMING METHOD USING THEREOF 审中-公开
公开(公告)号：WO2012067755A3
公开(公告)日：2012-05-24
申请号：PCT/US2011/057245
申请日：2011-10-21
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , CHEN, Kuang-Jung , LIU, Sen , HUANG, Wu-Song , LI, Wai-Kin
发明人： CHEN, Kuang-Jung , LIU, Sen , HUANG, Wu-Song , LI, Wai-Kin
IPC分类号： G03F7/004 , G03F7/038 , G03F7/26 , G03F7/32
摘要： The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer and a radiation sensitive acid generator. The imaging polymer includes a first monomelic unit having a pendant acid labile moiety and a second monomelic unit containing a reactive ether moiety, an isocyanide moiety or an isocyanate moiety. The patterning forming method utilizes an organic solvent developer to selectively remove unexposed regions of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193nm (ArF) lithography.

8. 发明申请

WO2008055137A2 SI-CONTAINING POLYMERS FOR NANO-PATTERN DEVICE FABRICATION 审中-公开
标题翻译：用于纳米图案装置制造的含SI聚合物
公开(公告)号：WO2008055137A2
公开(公告)日：2008-05-08
申请号：PCT/US2007/082967
申请日：2007-10-30
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , CHEN, Kuang-Jung , HUANG, Wu-Song , LI, Wai-Kin , LIN, Yi-Hsiung, S.
发明人： CHEN, Kuang-Jung , HUANG, Wu-Song , LI, Wai-Kin , LIN, Yi-Hsiung, S.
IPC分类号： G03C1/00
CPC分类号： G03F7/0758 , G03F7/0045
摘要： A resist polymer (22) that has nano-scale patterns of sub-lithographic openings (26) located therein that are oriented substantially perpendicular to its major surfaces is provided. Such a resist polymer having the nano-scale patterns is used as an etch mask transferring nano-scale patterns to an underlying substrate such as, for example, dielectric material (12). After the transferring of the nano-scale patterns into the substrate, nano-scale openings having a width of less than 50 nm are created in the substrate. The presence of the nano-scale voids in a dielectric material lowers the dielectric constant, k, of the original dielectric material. In accordance with an aspect of the present invention, the inventive resist polymer comprises a copolymer that includes a first monomer unit (A) that contains a Si-containing component, and a second monomer unit (B) that contains an organic component, wherein said two monomer units (A and B) have different etch rates.
摘要翻译：提供了具有位于其中的基本上垂直于其主表面定向的亚光刻开口（26）的纳米尺度图案的抗蚀剂聚合物（22）。具有纳米尺度图案的这种抗蚀剂聚合物用作将纳米尺度图案转移到诸如介电材料（12）的下面的基底的蚀刻掩模。在将纳米尺度图案转移到基底中之后，在基底中产生宽度小于50nm的纳米级开口。电介质材料中纳米尺度空隙的存在降低了原始电介质材料的介电常数k。根据本发明的一个方面，本发明的抗蚀剂聚合物包括包含含有含Si组分的第一单体单元（A）和含有有机组分的第二单体单元（B）的共聚物，其中所述两个单体单元（A和B）具有不同的蚀刻速率。

9. 发明申请

WO2004053594A2 HIGH SENSITIVITY RESIST COMPOSITIONS FOR ELECTRON-BASED LITHOGRAPHY 审中-公开
标题翻译：用于电子光刻的高灵敏度组合物
公开(公告)号：WO2004053594A2
公开(公告)日：2004-06-24
申请号：PCT/US2002/039048
申请日：2002-12-05
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , HUANG, Wu-Song , LI, Wenjie , MOREAU, Wayne , MEDEIROS, David, E. , PETRILLO, Karen, E. , LANG, Rotbert N. , ANGELOPOULOS, Marie
发明人： HUANG, Wu-Song , LI, Wenjie , MOREAU, Wayne , MEDEIROS, David, E. , PETRILLO, Karen, E. , LANG, Rotbert N. , ANGELOPOULOS, Marie
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , G03F7/0392
摘要： The resist compositions having an acid sensitive imaging polymer and a radiation sensitive acid generator component comprising: (i) a first radiation sensitive acid generator selected from the group consisting of dissolution-inhibiting acid generators, and (ii) a second radiation sensitive acid generator selected from the group consisting of unprotected acidic group-functionalized acid generators and acid labile group-protected acidic group-functionalized radiation sensitive acid generators; enables formation of high sensitivity resists suitable for use in EPL, EUV, soft x-ray, and other low energy intensity lithographic imaging applications. The resist compositions may be useful in other lithographic processes as well.
摘要翻译：具有酸敏感成像聚合物和辐射敏感性酸产生剂组分的抗蚀剂组合物包含：（i）选自溶解抑制酸产生剂的第一辐射敏感性酸产生剂，和（ii）选择的第二辐射敏感酸产生剂由不受保护的酸性官能化酸产生剂和酸不稳定基团保护的酸性官能化辐射敏感酸发生剂组成的组; 能够形成适用于EPL，EUV，软X射线和其他低能量光刻成像应用的高灵敏度抗蚀剂。抗蚀剂组合物也可用于其它平版印刷工艺。

10. 发明申请

WO2005088393A1 USE OF MIXED BASES TO ENHANCE PATTERNED RESIST PROFILES ON CHROME OR SENSITIVE SUBSTRATES 审中-公开
标题翻译：混合基础的使用以加强对铬或敏感基板上的图案耐腐蚀型材
公开(公告)号：WO2005088393A1
公开(公告)日：2005-09-22
申请号：PCT/US2004/004144
申请日：2004-02-11
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , MOREAU, Wayne, M. , ANGELOPOULOS, Marie , HUANG, Wu-Song , MEDEIROS, David, R. , PETRILLO, Karen, E.
发明人： MOREAU, Wayne, M. , ANGELOPOULOS, Marie , HUANG, Wu-Song , MEDEIROS, David, R. , PETRILLO, Karen, E.
IPC分类号： G03C1/73
CPC分类号： G03F7/0045 , G03F1/78 , G03F7/0392 , G03F7/40 , Y10S430/143
摘要： Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.
摘要翻译：通过使用包括室温固体碱和液体低蒸气压基料的基础添加剂的组合，可获得即使在困难的基材上也具有良好基础性能的抗蚀剂组合物。该组合物在通常用于掩模制造的金属基材如含铬层上特别有用。

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