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1. 发明申请

WO2013147803A1 ADAPTIVE MOVING READ REFERENCES FOR MEMORY CELLS 审中-公开
标题翻译：自适应移动读存储器的参考
公开(公告)号：WO2013147803A1
公开(公告)日：2013-10-03
申请号：PCT/US2012/031261
申请日：2012-03-29
申请人： INTEL CORPORATION , LEEM, Lark-Hoon , PANGAL, Kiran , GUO, Xin
发明人： LEEM, Lark-Hoon , PANGAL, Kiran , GUO, Xin
IPC分类号： G11C16/34
CPC分类号： G06F11/08 , G06F11/1048 , G11C11/5628 , G11C16/3418
摘要： Examples are disclosed for generating or providing a moving read reference (MRR) table for recovering from a read error of one or more memory cells of a non-volatile memory included in a storage device. Priorities may be adaptively assigned to entries included in the MRR table and the entries may be ordered for use based on the assigned priorities. Other examples are described and claimed.
摘要翻译：公开了用于生成或提供用于从包括在存储设备中的非易失性存储器的一个或多个存储器单元的读取错误中恢复的移动读取参考（MRR）表的示例。可以将优先级自适应地分配给包括在MRR表中的条目，并且可以基于分配的优先级对条目进行排序使用。其他的例子被描述和要求保护。

2. 发明申请

WO2013191898A1 EXTENDED SELECT GATE LIFETIME 审中-公开
标题翻译：扩展选择门锁生命
公开(公告)号：WO2013191898A1
公开(公告)日：2013-12-27
申请号：PCT/US2013/044155
申请日：2013-06-04
申请人： INTEL CORPORATION , WAKCHAURE, Yogesh B. , PANGAL, Kiran , GUO, Xin , MENG, Qingru , BELGAL, Hanmant
发明人： WAKCHAURE, Yogesh B. , PANGAL, Kiran , GUO, Xin , MENG, Qingru , BELGAL, Hanmant
IPC分类号： G11C16/06 , G11C16/14 , G11C16/12
CPC分类号： G11C16/14 , G11C16/0483 , G11C16/06 , G11C16/10 , G11C16/102 , G11C16/16 , G11C16/26 , G11C16/3418 , G11C16/3445 , G11C29/028 , H01L27/115
摘要： A memory device may include two or more memory cells in an integrated circuit, at least one flash cell acting as a select gate coupled to the two or more memory cells, and an interface to accept a select gate erase command and a select gate program command during normal operation of the integrated circuit. The integrated circuit may be capable to perform operations to erase the at least one select gate in response to the select gate erase command, and program the at least one select gate in response to the select gate program command.
摘要翻译：存储器件可以包括集成电路中的两个或更多个存储器单元，用作耦合到两个或更多个存储器单元的选择栅极的至少一个闪存单元以及接受选择栅极擦除命令和选择栅极程序指令的接口在集成电路正常运行期间。集成电路可以执行响应于选择栅极擦除命令擦除至少一个选择栅极的操作，并且响应于选择栅极程序命令编程至少一个选择栅极。

3. 发明申请

WO2013147818A1 NONVOLATILE MEMORY ERASURE TECHNIQUES 审中-公开
标题翻译：非易失性存储器擦除技术
公开(公告)号：WO2013147818A1
公开(公告)日：2013-10-03
申请号：PCT/US2012/031312
申请日：2012-03-29
申请人： INTEL CORPORATION , SANDA, Hiroyuki , PANGAL, Kiran , GUO, Xin , NAGANUMA, Kaoru
发明人： SANDA, Hiroyuki , PANGAL, Kiran , GUO, Xin , NAGANUMA, Kaoru
IPC分类号： G11C16/34 , G11C16/14
CPC分类号： G11C16/16 , G06F12/0246 , G11C11/5635 , G11C16/3445
摘要： Embodiments of the present disclosure describe methods, apparatus, and system configurations for conditional pre-programming of nonvolatile memory before erasure. In one instance, the method includes receiving a request to erase information in a portion of the nonvolatile memory device, in which the portion includes a plurality of storage units, determining whether one or more storage units of the plurality of storage units included in the portion of the non-volatile memory device are programmed, pre-programming the portion of the non-volatile memory device if the one or more storage units are determined to be programmed, and erasing the pre-programmed portion of the non-volatile memory device. A number of determined programmed storage units may not exceed a predetermined value. Other embodiments may be described and/or claimed.
摘要翻译：本公开的实施例描述了在擦除之前非易失性存储器的条件预编程的方法，装置和系统配置。在一种情况下，该方法包括接收擦除非易失性存储器件的一部分中的信息的请求，其中该部分包括多个存储单元，确定包括在该部分中的多个存储单元中的一个或多个存储单元对所述非易失性存储器件进行编程，如果所述一个或多个存储单元被确定为被编程，并且擦除所述非易失性存储器件的预编程部分，则对所述非易失性存储器件的所述部分进行预编程。多个确定的编程存储单元可能不超过预定值。可以描述和/或要求保护其他实施例。

4. 发明申请

WO2013100958A1 CYCLING ENDURANCE EXTENDING FOR MEMORY CELLS OF A NON-VOLATILE MEMORY ARRAY 审中-公开
标题翻译：对非易失性存储器阵列的存储单元的循环耐久性扩展
公开(公告)号：WO2013100958A1
公开(公告)日：2013-07-04
申请号：PCT/US2011/067558
申请日：2011-12-28
申请人： INTEL CORPORATION , GUO, Xin , PANGAL, Kiran , WAKCHAURE, Yogesh B. , RUBY, Paul D. , KUMAR, Ravi J.
发明人： GUO, Xin , PANGAL, Kiran , WAKCHAURE, Yogesh B. , RUBY, Paul D. , KUMAR, Ravi J.
IPC分类号： G11C16/34 , G11C16/10
CPC分类号： G06F11/1068 , G11C11/5642 , G11C16/06 , G11C16/26 , G11C16/3409
摘要： Examples are disclosed for cycling endurance extending for memory cells of a non-volatile memory array. The examples include implementing one or more endurance extending schemes based on program/erase cycle counts or a failure trigger. The one or more endurance extending schemes may include a gradual read window expansion, a gradual read window shift, an erase blank check algorithm, a dynamic soft-program or a dynamic pre-program.
摘要翻译：公开了用于对非易失性存储器阵列的存储器单元进行扩展的循环耐久性的示例。这些示例包括基于程序/擦除周期计数或故障触发来实现一个或多个耐力扩展方案。一个或多个耐力扩展方案可以包括逐渐读取窗口扩展，逐渐读取窗口移位，擦除空白校验算法，动态软程序或动态预编程。

5. 发明申请

WO2013101043A1 DYNAMIC WINDOW TO IMPROVE NAND MEMORY ENDURANCE 审中-公开
标题翻译：动态窗口提高NAND存储器的耐用性
公开(公告)号：WO2013101043A1
公开(公告)日：2013-07-04
申请号：PCT/US2011/067810
申请日：2011-12-29
申请人： INTEL CORPORATION , PANGAL, Kiran , KUMAR, Ravi J.
发明人： PANGAL, Kiran , KUMAR, Ravi J.
IPC分类号： G11C16/34 , G11C16/10 , G11C29/42
CPC分类号： G06F3/0616 , G06F3/064 , G06F3/0653 , G06F3/0659 , G06F3/0679 , G06F11/1068 , G06F11/2094 , G11C11/5635 , G11C11/5642 , G11C16/00 , G11C16/14 , G11C16/26 , G11C16/3436 , G11C29/021 , G11C29/026 , G11C29/028 , G11C29/50016 , G11C29/52 , G11C2029/0401
摘要： Methods and apparatus to provide dynamic window to improve NAND (Not And) memory endurance are described. In one embodiment, a program-erase window associated with a NAND memory device is dynamically varied by starting with a higher erase verify (TEV) voltage and lowering the TEV voltage with subsequent cycles over a life of the NAND memory device based on a current cycle count value. Alternatively, the program-erase window is dynamically varied by starting with a higher erase verify (PV) voltage and erase verify (TEV) voltage and lowering the PV and TEV voltages with subsequent cycles over a life of the NAND memory device based on the current cycle count value. Other embodiments are also disclosed and claimed.
摘要翻译：描述了提供动态窗口以提高NAND（Not And）存储器耐久性的方法和装置。在一个实施例中，与NAND存储器件相关联的编程擦除窗口通过从较高的擦除验证（TEV）电压开始并基于当前周期在NAND存储器件的使用寿命内随后的周期降低TEV电压而动态地改变计数值。或者，通过以更高的擦除验证（PV）电压和擦除验证（TEV）电压开始，并且基于当前的NAND存储器件的使用寿命期间的随后的周期来降低PV和TEV电压，编程擦除窗口被动态变化循环计数值。还公开并要求保护其他实施例。

6. 发明申请

WO2014164099A1 REDUCED UNCORRECTABLE MEMORY ERRORS 审中-公开
标题翻译：减少不可避免的内存错误
公开(公告)号：WO2014164099A1
公开(公告)日：2014-10-09
申请号：PCT/US2014/020549
申请日：2014-03-05
申请人： INTEL CORPORATION , PANGAL, Kiran , DAMLE, Prashant S. , SUNDARAM, Rajesh , QAWAMI, Shekoufeh , WALKER, Julie M. , RIVERS, Doyle
发明人： PANGAL, Kiran , DAMLE, Prashant S. , SUNDARAM, Rajesh , QAWAMI, Shekoufeh , WALKER, Julie M. , RIVERS, Doyle
IPC分类号： G06F11/16 , G06F12/00
CPC分类号： G06F11/1076 , G06F3/0619 , G06F3/064 , G06F3/0679 , G06F11/1044 , G06F11/1048 , G06F11/1068 , H03M13/05 , H03M13/1515 , H03M13/152 , H03M13/19 , H03M13/27 , H03M13/6508
摘要： Uncorrectable memory errors may be reduced by determining a logical array address for a set of memory arrays and transforming the logical array address to at least two unique array addresses based, at least in part, on logical locations of at least two memory arrays within the set of memory arrays. The at least two memory arrays are then accessed using the at least two unique array addresses, respectively.
摘要翻译：可以通过确定一组存储器阵列的逻辑阵列地址并且至少部分地基于该组内的至少两个存储器阵列的逻辑位置将逻辑阵列地址变换为至少两个唯一阵列地址来减少不可校正的存储器错误的存储器阵列。然后使用至少两个唯一的阵列地址分别访问至少两个存储器阵列。

7. 发明申请

WO2014051776A1 TECHNIQUES ASSOCIATED WITH A READ AND WRITE WINDOW BUDGET FOR A TWO LEVEL MEMORY SYSTEM 审中-公开
标题翻译：与两级存储系统的阅读和写入窗口预算相关的技术
公开(公告)号：WO2014051776A1
公开(公告)日：2014-04-03
申请号：PCT/US2013/047453
申请日：2013-06-25
申请人： INTEL CORPORATION , PANGAL, Kiran , DAMLE, Prashant
发明人： PANGAL, Kiran , DAMLE, Prashant
IPC分类号： G06F12/02
CPC分类号： G06F11/1068 , G06F11/1008 , G06F11/1048 , G06F11/1072 , G11C11/5628 , G11C11/5642 , G11C11/5678 , G11C13/004 , G11C13/0069 , G11C16/10 , G11C16/26
摘要： Examples are disclosed for techniques associated with a read and write window budget for a two level memory (2LM) system. In some examples, a read and write window budget may be established for the 2LM system that includes a first level memory and a second level memory. The established read and write window budget may include a combination of a first set of memory addresses and a second set of memory addresses of the second level of memory. The first set of memory addresses may be associated with non-volatile memory cells having wider cell threshold voltage distributions compared to cell threshold voltage distributions for non-volatile memory cells associated with the second set of memory addresses. According to some examples, the established read and write window budget may part of a strategy to meet both a completion time threshold for a given amount of memory and an acceptable error rate threshold for the given amount of memory when fulfilling read or write requests to the second level memory. Other examples are described and claimed.
摘要翻译：公开了与用于二级存储器（2LM）系统的读取和写入窗口预算相关联的技术的示例。在一些示例中，可以为包括第一级存储器和第二级存储器的2LM系统建立读和写窗口预算。所建立的读写窗口预算可以包括第一组存储器地址和第二级存储器的第二组存储器地址的组合。与第二组存储器地址相关联的非易失性存储器单元的单元阈值电压分布相比，第一组存储器地址可以与具有更宽的单元阈值电压分布的非易失性存储单元相关联。根据一些示例，建立的读和写窗口预算可以是满足给定量的存储器的完成时间阈值和给定量的存储器的可接受的错误率阈值的策略的一部分，当满足对该存储器的读取或写入请求时，二级内存其他的例子被描述和要求保护。

8. 发明申请

WO2015047334A1 ERROR CORRECTION IN NON_VOLATILE MEMORY 审中-公开
标题翻译： NON_VOLATILE MEMORY中的错误修正
公开(公告)号：WO2015047334A1
公开(公告)日：2015-04-02
申请号：PCT/US2013/062405
申请日：2013-09-27
申请人： INTEL CORPORATION , KWOK, Zion S. , MOTWANI, Ravi H. , PANGAL, Kiran , DAMLE, Prashant S.
发明人： KWOK, Zion S. , MOTWANI, Ravi H. , PANGAL, Kiran , DAMLE, Prashant S.
IPC分类号： G06F11/10 , G06F12/00
CPC分类号： G06F11/1068 , G06F11/10 , G06F11/1044 , G06F11/108 , G06F12/00 , G06F2212/7207 , G11C29/52 , H03M13/1515 , H03M13/152
摘要： Apparatus, systems, and methods for error correction in memory are described. In one embodiment, a memory controller comprises logic to receive a read request for data stored in a memory, retrieve the data and at least one associated error correction codeword, wherein the data and an associated error correction codeword is distributed across a plurality of memory devices in memory, apply a first error correction routine to decode the error correction codeword retrieved with the data and in response to an uncorrectable error in the error correction codeword, apply a second error correction routine to the plurality of devices in memory. Other embodiments are also disclosed and claimed.
摘要翻译：描述了存储器中用于纠错的装置，系统和方法。在一个实施例中，存储器控制器包括接收对存储在存储器中的数据的读取请求的逻辑，检索数据和至少一个相关联的纠错码字，其中数据和相关联的纠错码字分布在多个存储器件在存储器中，应用第一纠错程序来解码用数据检索的纠错码字，并响应错误校正码字中的不可校正错误，对存储器中的多个设备应用第二纠错例程。还公开并要求保护其他实施例。

9. 发明申请

WO2012074739A1 METHOD AND APPARATUS FOR IMPROVING ENDURANCE OF FLASH MEMORIES 审中-公开
标题翻译：改善闪存记忆保护的方法和装置
公开(公告)号：WO2012074739A1
公开(公告)日：2012-06-07
申请号：PCT/US2011/060809
申请日：2011-11-15
申请人： INTEL CORPORATION , CHO, Hoon , PANGAL, Kiran , PARAT, Krishna K. , MIELKE, Neal R. , KALAVADE, Pranav , CHAO, Iwen
发明人： CHO, Hoon , PANGAL, Kiran , PARAT, Krishna K. , MIELKE, Neal R. , KALAVADE, Pranav , CHAO, Iwen
IPC分类号： G11C16/14 , G11C16/06 , G11C16/02
CPC分类号： G11C16/3495 , G11C16/02 , G11C16/3404
摘要： A method and apparatus for improving the endurance of flash memories. In one embodiment of the invention, a high electric field is provided to the control gate of a flash memory module. The high electric field applied to the flash memory module removes trapped charges between a control gate and an active area of the flash memory module. In one embodiment of the invention, the high electric field is applied to the control gate of the flash memory module prior to an erase operation of the flash memory module. By applying a high electric field to the control gate of the flash memory module, embodiments of the invention improve the Program / Erase cycling degradation of the single-level or multi-level cells of the flash memory module.
摘要翻译：一种提高闪存耐久性的方法和装置。在本发明的一个实施例中，高电场被提供给闪速存储器模块的控制门。施加到闪速存储器模块的高电场消除了控制栅极和闪存模块的有效区域之间的捕获的电荷。在本发明的一个实施例中，在闪速存储器模块的擦除操作之前，高电场被施加到闪速存储器模块的控制栅极。通过将高电场施加到闪速存储器模块的控制栅极，本发明的实施例改善了闪存模块的单级或多级单元的编程/擦除循环衰减。

10. 发明申请

WO2015080819A1 ERROR CORRECTION IN MEMORY 审中-公开
标题翻译：内存错误修正
公开(公告)号：WO2015080819A1
公开(公告)日：2015-06-04
申请号：PCT/US2014/061929
申请日：2014-10-23
申请人： INTEL CORPORATION , MOTWANI, Ravi H. , PANGAL, Kiran
发明人： MOTWANI, Ravi H. , PANGAL, Kiran
IPC分类号： G11C29/42 , G11C16/06
CPC分类号： G06F11/1008 , G06F11/10 , G06F11/1004 , G06F11/1048 , H03M13/05 , H03M13/1102 , H03M13/1515 , H03M13/152 , H03M13/23 , H03M13/2957
摘要： Apparatus, systems, and methods for error correction in memory are described. In one embodiment, a controller comprises logic to receive a read request from a host device for data stored in a memory, retrieve the data and an associated error correction codeword, send the data to a host device, apply an error correction routine to decode the error correction codeword retrieved with the data, and in response to an error in the error correction codeword, send a location of data associated with the error to the host device. Other embodiments are also disclosed and claimed.
摘要翻译：描述了存储器中用于纠错的装置，系统和方法。在一个实施例中，控制器包括从主机设备接收存储在存储器中的数据的读取请求的逻辑，检索数据和相关联的纠错码字，将数据发送到主机设备，应用纠错例程来解码使用数据检索的纠错码字，并且响应于纠错码字中的错误，向主机设备发送与该错误相关联的数据的位置。还公开并要求保护其他实施例。

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