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1. 发明申请

WO9933075A3 DIGITALLY ADJUSTABLE ELECTRONIC CAPACITOR 审中-公开
标题翻译：数字调谐的电子能力
公开(公告)号：WO9933075A3
公开(公告)日：1999-08-26
申请号：PCT/DE9803797
申请日：1998-12-22
申请人： INST HALBLEITERPHYSIK GMBH , MEHR WOLFGANG
发明人： MEHR WOLFGANG
IPC分类号： H01G7/00 , H01G4/255
CPC分类号： H01G7/00
摘要： The invention relates to a digitally adjustable electronic capacitor which can be digitally controlled, tuned in a large capacity range across several magnitudes independently of the voltage available, integrated into circuits and produced economically without requiring the use of monolithic semiconductor crystals. The invention consists of a support and printed conductor levels which are isolated from each other, turned towards each other at a certain angle, preferably 90 DEG , and within each level have conductive printed conductors which are isolated from each other. A capacitor is configured between the printed conductors of the different levels. A digital electronic control element is assigned to each printed conductor level. The printed conductors of each printed conductor level can be connected independently of each other to an electrode via the digital electronic control element assigned to each printed conductor level. At least two printed conductors situated on different conductor levels are linked to the corresponding electrodes by means of the digital electronic control element. The selected capacitor is available at the level of the electrodes.
摘要翻译：本发明涉及一种数字可调谐电子容量，数字控制，在一个大的容量范围在几个数量级的不依赖于可用的电压可调的，如可以产生既作为分立元件，也可以集成在电路和廉价地制备可在不使用单片半导体晶体是必要的。它由在衬底的且彼此并以一定的角度，优选90°相绝缘，一个具有一个平面内相互隔离的导电迹线另一个绞合导体轨道平面。在不同层次互连之间，形成容量。每个导体轨道平面与数字控制电子相关联。的导体轨道平面的互连是对连接在一起的电极互连平面数字电子控制独立的相关联的一个。，它们位于不同的导体轨道的平面的至少两个导电线由相应的控制电子设备的相应电极相连接。在电极处是所选择的能力。

2. 发明专利

DE4414323C2 未知
公开(公告)号：DE4414323C2
公开(公告)日：2003-04-17
申请号：DE4414323
申请日：1994-04-25
申请人： INST HALBLEITERPHYSIK GMBH
发明人： MEHR WOLFGANG , WOLFF ANDRE
IPC分类号： H01J1/304

3. 发明专利

DE59802818D1 未知
公开(公告)号：DE59802818D1
公开(公告)日：2002-02-28
申请号：DE59802818
申请日：1998-12-22
申请人： INST HALBLEITERPHYSIK GMBH
发明人： MEHR WOLFGANG
IPC分类号： H01G4/255 , H01G7/00

4. 发明专利

DE19849471A1 Integrated high ohmic polycrystalline resistor, used in analog and digital circuits, comprises a polycrystalline resistive layer of silicon containing carbon and-or germanium 未知
公开(公告)号：DE19849471A1
公开(公告)日：2000-04-27
申请号：DE19849471
申请日：1998-10-21
申请人： INST HALBLEITERPHYSIK GMBH
发明人： MEHR WOLFGANG
IPC分类号： H01L27/04 , H01L21/02 , H01L21/822 , H01C7/00 , H01C17/00
摘要： An integrated, high ohmic, polycrystalline resistor comprises a polycrystalline SiC, SiGe or SiGeC resistive layer (3). An integrated, high ohmic, polycrystalline silicon resistor comprises a substrate (1), a dielectric (2), a polycrystalline SiC, SiGe or SiGeC resistive layer (3) and contacts (4). An Independent claim is also included for production of the above resistor.

5. 发明专利

DE4414323A1 Solid dielectric field emission appts. for use as diode or triode 未知
公开(公告)号：DE4414323A1
公开(公告)日：1995-10-26
申请号：DE4414323
申请日：1994-04-25
申请人： INST HALBLEITERPHYSIK GMBH
发明人： MEHR WOLFGANG , WOLFF ANDRE
IPC分类号： H01J1/304 , H01J1/30 , H01L29/76
摘要： The appts. includes a cathode (K), a control grid (S), and an anode/collector electrode (A). The cathode is fabricated with field emission points (F) pref. of heavily doped n-type Si projecting into a dielectric (D), pref. of SiO2. The control grid (S) is pref. of polycrystalline Si.The dielectric is covered by the anode or collection electrode which is also of poly-Si. The charge carriers emitted from the points into the dielectric can then drift to the anode either naturally, e.g. as in a diode, or under the influence of the control grid.

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