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1. 发明申请

WO0017423A2 METHOD FOR PRODUCING AN AMORPHOUS OR POLYCRYSTALLINE LAYER ON AN INSULATING REGION 审中-公开
标题翻译：用于生产无定形的或多晶的层上的场绝缘体
公开(公告)号：WO0017423A2
公开(公告)日：2000-03-30
申请号：PCT/DE9903069
申请日：1999-09-20
申请人： INST HALBLEITERPHYSIK GMBH , TILLACK BERND , HEINEMANN BERND , KNOLL DIETER , EHWALD KARL ERNST , WOLANSKY DIRK
发明人： TILLACK BERND , HEINEMANN BERND , KNOLL DIETER , EHWALD KARL-ERNST , WOLANSKY DIRK
IPC分类号： H01L21/285 , H01L21/20 , H01L21/28 , H01L21/3205 , H01L21/331 , H01L29/732 , C30B29/06
CPC分类号： H01L21/32055 , H01L21/02381 , H01L21/02532 , H01L21/02639
摘要： The invention aims to provide a method for producing an amorphous or polycrystalline layer on an insulating area which in relation to known methods increases the thickness of the amorphous or polycrystalline layer and improves the homogeneity of the deposition, thus resulting in reduced surface roughness while at least maintaining the insulating properties of the insulating area. To this end a suitable seeding layer (28, 29), preferably silicon nitride, is deposited so that the seeding capacity and insulating properties of the SiO2 insulating area (14, 31) during deposition of the amorphous or polycrystalline Si or SiGe layers (15, 16, 17, 33) are improved.
摘要翻译：本发明的目的是提出一种用于在绝缘体区，其中相比于以前的方法中，无定形的或多晶的层的厚度越大，则沉积的均匀性得到提高，因此，表面粗糙度被降低生产无定形的或多晶的层的方法。在这种情况下，应该至少保持该绝缘体区的绝缘性能。根据本发明，这个目的是通过将合适的（28，29）籽晶层，优选氮化硅，Bekeimungsvermögen和绝缘在非晶或多晶层（15，16的沉积由SiO 2制成的绝缘区域（14，31）的特性，17这样来实现，33）由Si或SiGe的提高。

2. 发明申请

WO0014806A9 VERTICAL BIPOLAR TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：用于制造垂直双极晶体管AND PROCESS
公开(公告)号：WO0014806A9
公开(公告)日：2000-08-17
申请号：PCT/DE9902884
申请日：1999-09-08
申请人： INST HALBLEITERPHYSIK GMBH , EHWALD KARL ERNST , KNOLL DIETER , HEINEMANN BERND
发明人： EHWALD KARL-ERNST , KNOLL DIETER , HEINEMANN BERND
IPC分类号： H01L21/28 , H01L21/331 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L29/08 , H01L29/732 , H01L29/737 , H01L29/10
CPC分类号： H01L29/66242 , H01L21/8249 , H01L29/0821 , H01L29/7378
摘要： The invention relates to a vertical bipolar transistor and a method for the production thereof. The aim of the invention is to produce a vertical bipolar transistor and to disclose a method for the production thereof, whereby excellent high frequency properties can be obtained for said transistor using the simplest possible production technology involving an implanted epitaxy-free collector and only one polysilicon layer spread over a large surface and which can be easily integrated into a conventional mainstream CMOS process without epitaxially produced trough areas. It is possible to simplify technology, while at the same time improving the high frequency parameters of vertical bipolar transistors by reducing the parasitic lateral and vertical components of the resistance of the collector, by means of a self-adjusting transistor construction in conjunction with a special method of production, whereby a highly doped monocrystalline base connection area surrounding the active base in a ring-like manner is removed in the region of the collector connection by reactive ion etching, together with the underlying less doped area of the collector or a part thereof.
摘要翻译：本发明涉及一种纵向双极晶体管及其制备方法。本发明的目的是提供一种垂直双极型晶体管及其制备方法，其中所述晶体管的高频特性优良可与最简单的可能的制造技术来实现，其与植入epitaxiefreien集电极管理和只有一个大面积沉积的多晶硅层且容易地在传统的“主流的方法 “CMOS工艺可以在没有外延制造阱区被集成。制造工艺的简化，同时提高在降低的寄生横向和垂直集电极电阻器部件的垂直双极型晶体管的高频参数是根据本发明通过自晶体管结构结合一特殊的制造方法，其中活性基环状由围绕高掺杂单晶硅基极连接区域在集电端子的区域实现反应离子蚀刻去除相同与更弱掺杂集电极的底层区域一起或与一部分。

3. 发明专利

DE19944925A1 Vertical layer structure for silicon-based bipolar transistors contains one or more monolayers consisting of doping atoms 未知
公开(公告)号：DE19944925A1
公开(公告)日：2001-03-15
申请号：DE19944925
申请日：1999-09-13
申请人： INST HALBLEITERPHYSIK GMBH
发明人： KRUEGER DIETMAR , MORGENSTERN THOMAS , EHWALD KARL-ERNST , BUGIEL EBERHARD , HEINEMANN BERND , KNOLL DIETER , TILLACK BERND
IPC分类号： H01L21/331 , H01L29/737 , H01L29/732
摘要： Vertical layer structure contains one or more monolayers consisting of doping atoms. An Independent claim is also included for a process for the production of the vertical layer structure comprising producing the monolayers by interrupting the growth of an epitaxial layer stack and adsorption of gaseous doping material compounds. Preferred Features: The monolayers can be inserted into SiGe heterolayers.

4. 发明专利

DE19845793A1 Bipolar transistor, especially a vertical bipolar transistor for high speed applications, produced using an initial low temperature deposition step to form a buffer layer on an insulation layer 未知
公开(公告)号：DE19845793A1
公开(公告)日：2000-03-23
申请号：DE19845793
申请日：1998-09-21
申请人： INST HALBLEITERPHYSIK GMBH
发明人： EHWALD KARL-ERNST , WOLANSKY DIRK , TILLACK BERND , KNOLL DIETER , HEINEMANN BERND
IPC分类号： H01L21/20 , H01L21/331 , H01L21/8249 , H01L27/06 , H01L29/732
摘要： Bipolar transistor (10) production comprises single-poly technology with differential epitaxial base production using initial low temperature buffer layer deposition on an insulation layer. A bipolar transistor production process comprises forming structured collector and surrounding insulation regions on a single crystal substrate layer and depositing a single crystal layer sequence over the collector region. The differential epitaxy, used to produce the single crystal layer sequence in the emitter region and a polycrystalline or amorphous layer sequence on the insulation region, begins with deposition of a buffer layer (15) on the insulation region (14) at very low temperature so that the thickness of the amorphous or polycrystalline layer (19) is greater than that of the single crystal layer. An Independent claim is also included for a bipolar transistor produced by the above process. Preferred Features: The first portion of the buffer layer is deposited on the insulation region at 450-700 (especially 550) deg C.

5. 发明专利

DE19845792A1 Producing an amorphous or polycrystalline silicon layer on an insulation region, especially for a bipolar transistor for high speed applications, uses a nucleation layer to improve nucleation 未知
公开(公告)号：DE19845792A1
公开(公告)日：2000-03-23
申请号：DE19845792
申请日：1998-09-21
申请人： INST HALBLEITERPHYSIK GMBH
发明人： TILLACK BERND , HEINEMANN BERND , KNOLL DIETER , EHWALD KARL-ERNST , WOLANSKY DIRK
IPC分类号： H01L21/285 , C30B29/06 , H01L21/20 , H01L21/28 , H01L21/3205 , H01L21/331 , H01L29/732
摘要： Amorphous or polycrystalline silicon layer production on an insulation region (14), using a nucleation layer (28) to improve nucleation, is new. Preferred Features: The amorphous or polycrystalline layer (19) consists of silicon-germanium and the insulation region (14) consists of SiO2. The nucleation layer is a silicon nitride layer.

6. 发明专利

DE19845787A1 Bipolar transistor, especially a high speed vertical bipolar transistor, is produced by single-poly technology with differential epitaxial base production using a nucleation layer to improve nucleation on an insulation region 未知
公开(公告)号：DE19845787A1
公开(公告)日：2000-03-23
申请号：DE19845787
申请日：1998-09-21
申请人： INST HALBLEITERPHYSIK GMBH
发明人： EHWALD KARL-ERNST , HEINEMANN BERND , WOLANSKY DIRK , TILLACK BERND , KNOLL DIETER
IPC分类号： H01L21/331 , H01L29/732
摘要： Bipolar transistor production, by single-poly technology with differential epitaxial base production using a nucleation layer (28) to improve nucleation on an insulation region, is new. Transistor production process comprises forming structured collector and surrounding insulation regions on a single crystal substrate layer and depositing a single crystal layer sequence over the collector region. Nucleation on the insulation region is improved by provision of a nucleation layer (28) which has good silicon nucleating and insulating properties and which promotes formation of a thick amorphous or polycrystalline layer (19) in the insulation region (14) during differential epitaxy for deposition of the single crystal layer sequence in the emitter region. An Independent claim is also included for a bipolar transistor produced by the above process.

7. 发明专利

DE10004387A1 CMOS compatible lateral DMOS transistor has drift space region depleted of free charge carriers if drain voltage lower than gate isolator breakdown voltage 未知
公开(公告)号：DE10004387A1
公开(公告)日：2001-11-29
申请号：DE10004387
申请日：2000-03-31
申请人： INST HALBLEITERPHYSIK GMBH
发明人： EHWALD KARL-ERNST , HEINEMANN BERND , KNOLL DIETER , WINKLER WOLFGANG
IPC分类号： H01L21/336 , H01L29/10 , H01L29/78
摘要： The device has a region of the drift space near a highly doped surface zone or in a region bounding a highly doped region directly connected to a control gate that is totally free depleted of free charge carriers when a drain voltage lower than the gate isolator breakdown voltage is applied. The device has the entire surface of a drift space covered by a zone of the same conductor type as the drain region that is of low doping compared to the highly doped drain region and in which the area-related net doping concentration is not greater than 5 x 10 12 At/cm . The region of the drift space near a highly doped surface zone (9b) or in a region bounding a highly doped drain region (9) directly connected to a control gate (6) is totally free depleted of free charge carriers when a drain voltage lower than the gate isolator (5) breakdown voltage is applied. Independent claims are also included for the following: a method of manufacturing a CMOS compatible lateral DMOS transistor.

8. 发明专利

DE19940278A1 未知
公开(公告)号：DE19940278A1
公开(公告)日：2001-03-08
申请号：DE19940278
申请日：1999-08-26
申请人： INST HALBLEITERPHYSIK GMBH
发明人： KRUEGER DIETMAR , MORGENSTERN THOMAS , EHWALD KARL-ERNST , BUGIEL EBERHARD , HEINEMANN BERND , KNOLL DIETER , TILLACK BERND
IPC分类号： H01L21/20 , H01L21/205 , H01L21/22 , H01L21/331 , H01L29/737
摘要： The invention relates to a layer structure for bipolar transistors, to a method for the production thereof, and to a method for producing integrated circuits using said layer structure. The aim of the invention is to provide a layer structure for bipolar transistors with which the electric properties and the homogeneity of bipolar transistors are improved. In particular, the base current behavior should be improved and the noises should be decreased with diminished emitter transition resistances. In addition, the invention seeks to provide a method for producing bipolar transistors using a layer structure of this type. To these ends, the invention provides that the vertical structure of the transistors contains a partial single-crystalline emitter layer (5) which changes into a polycrystalline and/or amorphous layer above an epitactical single-crystalline growth layer and, in the vertical structure of the transistor, the partial single-crystalline emitter layer (5) is locally underlayed with thin oxide and/or nitride layers.

9. 发明专利

DE19857640A1 未知
公开(公告)号：DE19857640A1
公开(公告)日：2000-06-15
申请号：DE19857640
申请日：1998-12-14
申请人： INST HALBLEITERPHYSIK GMBH
发明人： HEINEMANN BERND , EHWALD KARL-ERNST , KNOLL DIETER
IPC分类号： H01L21/331 , H01L29/737
摘要： The aim of the invention is to provide for a bipolar transistor and a method for producing the same. Said bipolar transistor should have minimal base-emitter capacities and very good high frequency characteristics. The static characteristics, especially the base current ideality and the low frequency noise, of a bipolar transistor with weakly doped cap layer (116) should not significantly deteriorate and process complexity should not increase. According to the invention, the problem is solved by inserting a special doping profile in a cap layer (116) (cap doping) which has been produced epitaxially. A minimal base emitter capacity and very good high frequency characteristics can be obtained by means of said doping profile. At the same time, the efficiency of the generation/recombination active boundary surface between the cap layer (116) and the isolator (117) in the polysilicon overlapping area in the relevant working area of the transistor is reduced and the base current ideality is improved. The section at the base side in the cap layer (116) has a preferred thickness of between 20 nm and 70 nm and is only doped weakly, preferably less than 5 10 cm . Said section is crucial for the good high frequency characteristics.

10. 发明专利

DE19842106A1 未知
公开(公告)号：DE19842106A1
公开(公告)日：2000-03-09
申请号：DE19842106
申请日：1998-09-08
申请人： INST HALBLEITERPHYSIK GMBH
发明人： EHWALD KARL-ERNST , HEINEMANN BERND , KNOLL DIETER
IPC分类号： H01L21/28 , H01L21/331 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L29/08 , H01L29/732 , H01L29/737
摘要： The invention relates to a vertical bipolar transistor and a method for the production thereof. The aim of the invention is to produce a vertical bipolar transistor and to disclose a method for the production thereof, whereby excellent high frequency properties can be obtained for said transistor using the simplest possible production technology involving an implanted epitaxy-free collector and only one polysilicon layer spread over a large surface and which can be easily integrated into a conventional mainstream CMOS process without epitaxially produced trough areas. It is possible to simplify technology, while at the same time improving the high frequency parameters of vertical bipolar transistors by reducing the parasitic lateral and vertical components of the resistance of the collector, by means of a self-adjusting transistor construction in conjunction with a special method of production, whereby a highly doped monocrystalline base connection area surrounding the active base in a ring-like manner is removed in the region of the collector connection by reactive ion etching, together with the underlying less doped area of the collector or a part thereof.

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