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1. 发明申请

WO2008073767A2 METHODS OF FILLING A SET OF INTERSTITIAL SPACES OF A NANOPARTICLE THIN FILM WITH A DIELECTRIC MATERIAL 审中-公开
标题翻译：用介电材料填充一组纳米颗粒薄膜的间隙空间的方法
公开(公告)号：WO2008073767A2
公开(公告)日：2008-06-19
申请号：PCT/US2007/086432
申请日：2007-12-05
申请人： INNOVALIGHT, INC. , LEMMI, Francesco , ROGOJINA, Elena V. , YU, Pingrong , JURBERGS, David , ANTONIADIS, Homer , KELMAN, Maxim
发明人： LEMMI, Francesco , ROGOJINA, Elena V. , YU, Pingrong , JURBERGS, David , ANTONIADIS, Homer , KELMAN, Maxim
IPC分类号： H01L21/208
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30°C and about 300°C, and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1 x 10 -7 Torr and about 1 x 10 -4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种形成致密纳米颗粒薄膜的方法。该方法包括将衬底放置在第一腔室中; 和沉积纳米粒子墨水，纳米粒子墨水包括一组第IV族半导体粒子和溶剂。该方法还包括将纳米粒子墨水加热至约30℃和约300℃之间的第一温度以及约1分钟和约60分钟之间的第一时间段，其中溶剂基本上被除去，并且多孔致密物是形成; 以及将衬底放置在第二室中，第二室的压力在约1×10 -7 Torr和约1×10 -4 Torr之间。该方法还包括在多孔压制物上沉积电介质材料; 其中形成致密的纳米颗粒薄膜。

2. 发明申请

WO2008073763A2 METHODS FOR CREATING A DENSIFIED GROUP IV SEMICONDUCTOR NANOPARTICLE THIN FILM 审中-公开
标题翻译：创建密集的第四族半导体纳米颗粒薄膜的方法
公开(公告)号：WO2008073763A2
公开(公告)日：2008-06-19
申请号：PCT/US2007/086376
申请日：2007-12-04
申请人： INNOVALIGHT, INC. , LEMMI, Francesco , ROGOJINA, Elena V. , YU, Pingrong , JURBERGS, David , ANTONIADIS, Homer , KELMAN, Maxim
发明人： LEMMI, Francesco , ROGOJINA, Elena V. , YU, Pingrong , JURBERGS, David , ANTONIADIS, Homer , KELMAN, Maxim
IPC分类号： H01L21/208
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30°C and about 300°C, and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25°C and about 60° C; and heating the porous compact to a third temperature between about 100° C and about 1000° C, and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了在腔室中形成致密纳米颗粒薄膜的方法。该方法包括将衬底放置在腔室中; 和沉积纳米粒子墨水，纳米粒子墨水包括一组第IV族半导体粒子和溶剂。该方法还包括将纳米粒子墨水加热至约30℃和约300℃之间的第一温度以及约1分钟和约60分钟之间的第一时间段，其中溶剂基本上被除去，并且多孔致密物是形成。所述方法进一步包括将所述多孔压制品暴露于HF蒸气约2分钟至约20分钟之间的第二时间段，并将所述多孔压制品加热至约25℃至约60℃之间的第二温度。 C; 并将多孔团块加热至约100℃之间的第三温度; C和约1000℃; 并且持续约5分钟至约10小时的第三时间段; 其中形成致密的纳米颗粒薄膜。

3. 发明申请

WO2008039757A4 SEMICONDUCTOR DEVICES AND METHODS FROM GROUP IV NANOPARTICLE MATERIALS 审中-公开
公开(公告)号：WO2008039757A4
公开(公告)日：2008-04-03
申请号：PCT/US2007/079393
申请日：2007-09-25
申请人： INNOVALIGHT, INC. , POPLAVSKYY, Dmitry , ANTONIADIS, Homer , JURBERGS, David , KELMAN, Maxim , LEMMI, Francesco , YU, Pingrong
发明人： POPLAVSKYY, Dmitry , ANTONIADIS, Homer , JURBERGS, David , KELMAN, Maxim , LEMMI, Francesco , YU, Pingrong
IPC分类号： H01L31/18 , H01L31/075 , H01L31/068
摘要： A device for generating electricity from solar radiation is disclosed. The device includes a substrate; an insulating layer formed above the substrate; and a first electrode formed above the insulating layer. The device also includes a first doped Group IV nanoparticle thin film deposited on the first electrode; and a second doped Group IV nanoparticle thin film deposited on the first doped Group IV nanoparticle thin film. The device further includes a third doped Group IV nanoparticle thin film deposited on the second doped Group IV nanoparticle thin film; a fourth doped Group IV nanoparticle thin film deposited on the third doped Group IV nanoparticle thin film; and, a second electrode formed on the fourth doped Group IV nanoparticle thin film. Wherein, when solar radiation is applied to the fourth doped Group IV nanoparticle thin film, an electrical current is produced.

4. 发明申请

WO2008030966A1 SEMICONDUCTOR THIN FILMS FORMED FROM GROUP IV NANOPARTICLES 审中-公开
标题翻译：由IV族纳米粒子形成的半导体薄膜
公开(公告)号：WO2008030966A1
公开(公告)日：2008-03-13
申请号：PCT/US2007/077765
申请日：2007-09-06
申请人： INNOVALIGHT, INC. , KELMAN, Maxim , YU, Pingrong , JAYARAMAN, Manikandan , POPLAVSKYY, Dmitry , JURBERGS, David , LEMMI, Francesco , ANTONIADIS, Homer
发明人： KELMAN, Maxim , YU, Pingrong , JAYARAMAN, Manikandan , POPLAVSKYY, Dmitry , JURBERGS, David , LEMMI, Francesco , ANTONIADIS, Homer
IPC分类号： H01L21/208
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02601 , H01L21/02628 , Y10T428/249954 , Y10T428/31678
摘要： Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.
摘要翻译：描述了使用IV族纳米颗粒的制剂由涂覆底物形成的原生IV族半导体薄膜。这种本土IV族半导体薄膜利用了第IV族半导体材料的广泛的历史知识，同时利用了第IV族半导体纳米颗粒的优点，用于生产可容易地集成到多个器件中的新型薄膜。

5. 发明申请

WO2008091393A3 GROUP IV NANOPARTICLES AND FILMS THEREOF 审中-公开
公开(公告)号：WO2008091393A3
公开(公告)日：2008-07-31
申请号：PCT/US2007/076549
申请日：2007-08-22
申请人： INNOVALIGHT, INC. , KELMAN, Maxim , LI, Xuegeng , YU, Pingrong , VANHEUSDEN, Karel , JURBERGS, David
发明人： KELMAN, Maxim , LI, Xuegeng , YU, Pingrong , VANHEUSDEN, Karel , JURBERGS, David
IPC分类号： B22F1/00 , B82B1/00 , B82B3/00 , C01B33/02 , C01B33/027
摘要： A set of nanoparticles is disclosed. Each nanoparticle of the set of nanoparticles is comprised of a set of Group IV atoms arranged in a substantially spherical configuration. Each manoparticle of the set of nanoparticles further having a sphericity of between about 1.0 and about 2.0; a diameter of between about 4 nm and about 100 nm; and a sintering temperature less than a melting temperature of the set of Group IV atoms.

6. 发明公开

EP1922746A2 STABLY PASSIVATED GROUP IV SEMICONDUCTOR NANOPARTICLES AND METHODS AND COMPOSITIONS THEREOF 审中-公开
标题翻译：稳定的钝化IV族半导体纳米粒子和方法及其组合物
公开(公告)号：EP1922746A2
公开(公告)日：2008-05-21
申请号：EP06850508.0
申请日：2006-08-11
申请人： Innovalight, Inc. , Jurbergs, David , Rogojina, Elena, V.
发明人： JURBERGS, David , ROGOJINA, Elena, V.
IPC分类号： H01L21/20
CPC分类号： C30B29/605 , B82Y30/00 , C01B33/02 , C01P2002/82 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C01P2006/40 , C09C1/3081 , C23C18/00 , C30B7/00 , Y10T428/2991 , Y10T428/2995
摘要： Group IV semiconductor nanoparticles that have been stably passivated with an organic passivation layer, methods for producing the same, and compositions utilizing stably passivated Group IV semiconductor nanoparticles are described. In some embodiments, the stably passivated Group IV semiconductor nanoparticles are luminescent Group IV semiconductor nanoparticles with high photoluminescent quantum yields. The stably passivated Group IV semiconductor nanoparticles can be used in compositions useful in a variety of optoelectronic devices.

7. 发明申请

WO2007117265A3 STABLY PASSIVATED GROUP IV SEMICONDUCTOR NANOPARTICLES AND METHODS AND COMPOSITIONS THEREOF 审中-公开
公开(公告)号：WO2007117265A3
公开(公告)日：2007-10-18
申请号：PCT/US2006/031511
申请日：2006-08-11
申请人： INNOVALIGHT, INC. , JURBERGS, David , ROGOJINA, Elena, V.
发明人： JURBERGS, David , ROGOJINA, Elena, V.
IPC分类号： B32B5/16 , B05D7/00
摘要： Group IV semiconductor nanoparticles that have been stably passivated with an organic passivation layer, methods for producing the same, and compositions utilizing stably passivated Group IV semiconductor nanoparticles are described. In some embodiments, the stably passivated Group IV semiconductor nanoparticles are luminescent Group IV semiconductor nanoparticles with high photoluminescent quantum yields. The stably passivated Group IV semiconductor nanoparticles can be used in compositions useful in a variety of optoelectronic devices.

8. 发明申请

WO2008008723A1 PHOTOACTIVE MATERIALS CONTAINING BULK AND QUANTUM-CONFINED GROUP IV SEMICONDUCTOR STRUCTURES AND OPTOELECTRONIC DEVICES MADE THEREFROM 审中-公开
标题翻译：包含大容量和量子限制的IV族半导体结构和光电器件的光学材料
公开(公告)号：WO2008008723A1
公开(公告)日：2008-01-17
申请号：PCT/US2007/073037
申请日：2007-07-09
申请人： INNOVALIGHT, INC. , POPLAVSKYY, Dmytro , SINHA, Sanjai , JURBERGS, David , ANTONIADIS, Homer
发明人： POPLAVSKYY, Dmytro , SINHA, Sanjai , JURBERGS, David , ANTONIADIS, Homer
IPC分类号： H01L31/0352 , H01L31/028
CPC分类号： H01L31/0352 , H01L31/028 , Y02E10/547
摘要： The present invention provides photoactive materials that include quantum-confined semiconductor nanostructures in combination with non-quantum confined and bulk semiconductor structures to enhance or create a type II band offset structure. The photoactive materials are well-suited for use as the photoactive layer in photoactive devices, including photovoltaic devices, photoconductors and photodetectors.
摘要翻译：本发明提供光活性材料，其包括与非量子限制和体半导体结构组合的量子限制半导体纳米结构，以增强或创建II型带偏移结构。光活性材料非常适合用作光活性器件中的光活性层，包括光电器件，光电导体和光电探测器。

9. 发明申请

WO2008091581A1 NANOPARTICLES WITH GRAFTED ORGANIC MOLECULES 审中-公开
标题翻译：具有有机分子的纳米颗粒
公开(公告)号：WO2008091581A1
公开(公告)日：2008-07-31
申请号：PCT/US2008/000789
申请日：2008-01-22
申请人： THE UNIVERSITY OF MINNESOTA , INNOVALIGHT, INC. , MANGOLINI, Lorenzo , KORTSHAGEN, Uwe , ANTHONY, Rebecca, J. , JURBERGS, David , LI, Xuegeng , ROGOJINA, Elena
发明人： MANGOLINI, Lorenzo , KORTSHAGEN, Uwe , ANTHONY, Rebecca, J. , JURBERGS, David , LI, Xuegeng , ROGOJINA, Elena
IPC分类号： B01J19/08
CPC分类号： B01J19/088 , B01J2219/0809 , B01J2219/0835 , B01J2219/0847 , B01J2219/0849 , B01J2219/0869 , B01J2219/0875 , B01J2219/0886 , B01J2219/0896 , C01B33/02 , Y10S977/773
摘要： An apparatus for producing grafted Group IV nanoparticles is provided and includes a source of Group IV nanoparticles (102). A chamber (104) is configured to carry the nanoparticles in a gas phase and has an inlet and an exit. The inlet configured to couple to an organic molecule source (130) which is configured to provide organic molecules to the chamber (104). A plasma source (102) is arranged to generate a plasma. The plasma causes the organic molecules to break down and/or activate in the chamber and bond to the nanoparticles. A method of producing grafted Group FV nanoparticles is also provided and includes receiving Group IV nanoparticles in a gas phase, creating a plasma with the nanoparticles, and allowing the organic molecules to break down and/or become activated in the plasma and bond with the nanoparticles.
摘要翻译：提供了用于生产接枝的IV族纳米颗粒的设备，并且包括IV族纳米颗粒的源（102）。腔室（104）被配置为携带气相中的纳米颗粒并且具有入口和出口。入口被配置为耦合到有机分子源（130），其被配置为向腔室（104）提供有机分子。等离子体源（102）被布置成产生等离子体。等离子体导致有机分子在室中分解和/或活化并结合到纳米颗粒。还提供了生产接枝的FV族纳米颗粒的方法，并且包括在气相中接收IV族纳米颗粒，与纳米颗粒一起产生等离子体，并允许有机分子在等离子体中分解和/或变得活化并与纳米颗粒结合。

10. 发明申请

WO2008118865A3 OPTIMIZED LASER PYROLYSIS REACTOR AND METHODS THEREFOR 审中-公开
标题翻译：优化的激光热裂解反应器及其方法
公开(公告)号：WO2008118865A3
公开(公告)日：2008-10-02
申请号：PCT/US2008/058036
申请日：2008-03-24
申请人： INNOVALIGHT, INC. , LI, Xuegeng , JURBERGS, David
发明人： LI, Xuegeng , JURBERGS, David
IPC分类号： B01J19/12 , C01B33/027 , C09K11/59 , B82B1/00 , B82B3/00
摘要： An apparatus for making a set of Group IV nanoparticles is disclosed. The apparatus includes a top plate, the top plate further including an outlet port; a bottom plate; and a casing extending between the top plate and the bottom plate. The apparatus also includes a particle collector assembly configured to be in fluid communication with the outlet port; and a primary precursor tubing assembly passing through the bottom plate into the casing, the primary precursor tubing assembly including a primary precursor tubing assembly nozzle. The apparatus further includes a set of secondary precursor tubing assemblies passing through the bottom plate into the casing, wherein each secondary precursor tubing assembly of the set of secondary precursor tubing assemblies further includes a set of secondary precursor tubing assembly nozzles positioned orthogonally to the primary precursor tubing assembly nozzle, the set of secondary precursor tubing assembly nozzles further configured to be adjusted to a first height above primary precursor tubing assembly nozzle. The apparatus also includes a laser configured to generate a laser beam, the laser beam being substantially perpendicular to the primary precursor tubing assembly nozzle in the reaction zone, wherein the laser may be adjusted to a second height above primary precursor tubing assembly nozzle.
摘要翻译：公开了一种用于制造一组IV族纳米颗粒的装置。该设备包括顶板，顶板还包括出口端口; 底板; 以及在顶板和底板之间延伸的壳体。该设备还包括构造成与出口端口流体连通的颗粒收集器组件; 以及穿过所述底板进入所述壳体的主前驱物管道组件，所述主前驱物管道组件包括主前驱物管道组件喷嘴。该设备还包括一组次级前驱物管道组件，该组次级前驱物管道组件穿过底板进入套管，其中该组次级前驱物管道组件中的每个次级前驱物管道组件还包括一组次级前驱物管道组件喷嘴，该一组次级前驱物管道组件喷嘴正交于主要前驱物管组件喷嘴组，所述一组次级前驱物管组件喷嘴进一步构造成被调节到主要前驱物管组件喷嘴上方的第一高度。该设备还包括配置成产生激光束的激光器，该激光束基本垂直于反应区中的主前驱体管组件喷嘴，其中激光器可被调节至主前驱体管组件喷嘴上方的第二高度。 p>

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