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1. 发明公开

EP1922746A2 STABLY PASSIVATED GROUP IV SEMICONDUCTOR NANOPARTICLES AND METHODS AND COMPOSITIONS THEREOF 审中-公开
标题翻译：稳定的钝化IV族半导体纳米粒子和方法及其组合物
公开(公告)号：EP1922746A2
公开(公告)日：2008-05-21
申请号：EP06850508.0
申请日：2006-08-11
申请人： Innovalight, Inc. , Jurbergs, David , Rogojina, Elena, V.
发明人： JURBERGS, David , ROGOJINA, Elena, V.
IPC分类号： H01L21/20
CPC分类号： C30B29/605 , B82Y30/00 , C01B33/02 , C01P2002/82 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C01P2006/40 , C09C1/3081 , C23C18/00 , C30B7/00 , Y10T428/2991 , Y10T428/2995
摘要： Group IV semiconductor nanoparticles that have been stably passivated with an organic passivation layer, methods for producing the same, and compositions utilizing stably passivated Group IV semiconductor nanoparticles are described. In some embodiments, the stably passivated Group IV semiconductor nanoparticles are luminescent Group IV semiconductor nanoparticles with high photoluminescent quantum yields. The stably passivated Group IV semiconductor nanoparticles can be used in compositions useful in a variety of optoelectronic devices.

2. 发明公开

EP1922746A4 STABLY PASSIVATED GROUP IV SEMICONDUCTOR NANOPARTICLES AND METHODS AND COMPOSITIONS THEREOF 审中-公开
标题翻译：稳定的钝化IV族半导体纳米粒子和方法及其组合物
公开(公告)号：EP1922746A4
公开(公告)日：2010-08-11
申请号：EP06850508
申请日：2006-08-11
申请人： INNOVALIGHT INC , JURBERGS DAVID , ROGOJINA ELENA V
发明人： JURBERGS DAVID , ROGOJINA ELENA V
IPC分类号： B32B5/16 , B05D7/00 , C30B33/00
CPC分类号： C30B29/605 , B82Y30/00 , C01B33/02 , C01P2002/82 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C01P2006/40 , C09C1/3081 , C23C18/00 , C30B7/00 , Y10T428/2991 , Y10T428/2995

3. 发明申请

WO2008073763A3 METHODS FOR CREATING A DENSIFIED GROUP IV SEMICONDUCTOR NANOPARTICLE THIN FILM 审中-公开
标题翻译：用于形成透明IV族半导体纳米薄膜的方法
公开(公告)号：WO2008073763A3
公开(公告)日：2008-08-07
申请号：PCT/US2007086376
申请日：2007-12-04
申请人： INNOVALIGHT INC , LEMMI FRANCESCO , ROGOJINA ELENA V , YU PINGRONG , JURBERGS DAVID , ANTONIADIS HOMER , KELMAN MAXIM
发明人： LEMMI FRANCESCO , ROGOJINA ELENA V , YU PINGRONG , JURBERGS DAVID , ANTONIADIS HOMER , KELMAN MAXIM
IPC分类号： H01L21/208
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30°C and about 300°C, and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25°C and about 60° C; and heating the porous compact to a third temperature between about 100° C and about 1000° C, and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种在腔室中形成致密的纳米颗粒薄膜的方法。该方法包括将衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族半导体颗粒和溶剂。该方法还包括将纳米颗粒油墨加热至约30℃至约300℃之间的第一温度和约1分钟至约60分钟的第一时间，其中基本上除去溶剂，并且多孔压块形成。该方法还包括将多孔压块暴露于HF蒸气中约2分钟至约20分钟的第二时间段，并将多孔压块加热至约25℃至约60℃之间的第二温度; 并将所述多孔压块加热至约100℃至约1000℃的第三温度和约5分钟至约10小时的第三时间; 其中形成致密的纳米颗粒薄膜。

4. 发明申请

WO2008091581A1 NANOPARTICLES WITH GRAFTED ORGANIC MOLECULES 审中-公开
标题翻译：具有有机分子的纳米颗粒
公开(公告)号：WO2008091581A1
公开(公告)日：2008-07-31
申请号：PCT/US2008/000789
申请日：2008-01-22
申请人： THE UNIVERSITY OF MINNESOTA , INNOVALIGHT, INC. , MANGOLINI, Lorenzo , KORTSHAGEN, Uwe , ANTHONY, Rebecca, J. , JURBERGS, David , LI, Xuegeng , ROGOJINA, Elena
发明人： MANGOLINI, Lorenzo , KORTSHAGEN, Uwe , ANTHONY, Rebecca, J. , JURBERGS, David , LI, Xuegeng , ROGOJINA, Elena
IPC分类号： B01J19/08
CPC分类号： B01J19/088 , B01J2219/0809 , B01J2219/0835 , B01J2219/0847 , B01J2219/0849 , B01J2219/0869 , B01J2219/0875 , B01J2219/0886 , B01J2219/0896 , C01B33/02 , Y10S977/773
摘要： An apparatus for producing grafted Group IV nanoparticles is provided and includes a source of Group IV nanoparticles (102). A chamber (104) is configured to carry the nanoparticles in a gas phase and has an inlet and an exit. The inlet configured to couple to an organic molecule source (130) which is configured to provide organic molecules to the chamber (104). A plasma source (102) is arranged to generate a plasma. The plasma causes the organic molecules to break down and/or activate in the chamber and bond to the nanoparticles. A method of producing grafted Group FV nanoparticles is also provided and includes receiving Group IV nanoparticles in a gas phase, creating a plasma with the nanoparticles, and allowing the organic molecules to break down and/or become activated in the plasma and bond with the nanoparticles.
摘要翻译：提供了用于生产接枝的IV族纳米颗粒的设备，并且包括IV族纳米颗粒的源（102）。腔室（104）被配置为携带气相中的纳米颗粒并且具有入口和出口。入口被配置为耦合到有机分子源（130），其被配置为向腔室（104）提供有机分子。等离子体源（102）被布置成产生等离子体。等离子体导致有机分子在室中分解和/或活化并结合到纳米颗粒。还提供了生产接枝的FV族纳米颗粒的方法，并且包括在气相中接收IV族纳米颗粒，与纳米颗粒一起产生等离子体，并允许有机分子在等离子体中分解和/或变得活化并与纳米颗粒结合。

5. 发明申请

WO2008027898A3 FULLERENE-CAPPED GROUP IV SEMICONDUCTOR NANOPARTICLES AND DEVICES MADE THEREFROM 审中-公开
标题翻译：富勒烯四极半导体纳米器件及其器件
公开(公告)号：WO2008027898A3
公开(公告)日：2008-05-08
申请号：PCT/US2007077007
申请日：2007-08-28
申请人： INNOVALIGHT INC , ROGOJINA ELENA , JURBERGS DAVID
发明人： ROGOJINA ELENA , JURBERGS DAVID
IPC分类号： C01B31/02 , H01L31/0256 , H01L51/00
CPC分类号： C01B33/02 , B22F1/02 , B22F2998/00 , B82Y10/00 , B82Y30/00 , C22C2026/001 , H01L51/0046 , Y10T428/2982 , B22F1/0018 , B22F1/0025
摘要： Fullerene-capped Group IV nanoparticles, materials and devices made from the nanoparticles, and methods for making the nanoparticles are provided. The fullerene-capped Group IV nanoparticles have enhanced electron transporting properties and are well-suited for use in photovoltaic, electronics, and solid-state lighting applications.
摘要翻译：提供富勒烯封端的IV族纳米颗粒，由纳米颗粒制成的材料和器件以及制备纳米颗粒的方法。富勒烯封端的IV族纳米颗粒具有增强的电子传输性能，并且非常适合用于光伏，电子和固态照明应用。

6. 发明申请

WO2008143716A3 IN SITU MODIFICATION OF GROUP IV NANOPARTICLES USING GAS PHASE NANOPARTICLE REACTORS 审中-公开
标题翻译：使用气相纳米材料反应器的第四组纳米粒子的现场改性
公开(公告)号：WO2008143716A3
公开(公告)日：2009-09-11
申请号：PCT/US2007089213
申请日：2007-12-31
申请人： INNOVALIGHT INC , LI XUEGENG , ROGOJINA ELENA , JURBERGS DAVID , AHERNE DAMIAN
发明人： LI XUEGENG , ROGOJINA ELENA , JURBERGS DAVID , AHERNE DAMIAN
IPC分类号： C01B33/029 , B22F1/00 , C01B33/027 , C09K11/02 , C09K11/59
CPC分类号： B22F1/0018 , B01J19/121 , B01J2219/0883 , B22F9/28 , B22F2999/00 , B82Y30/00 , C01B33/027 , C01P2002/82 , C01P2004/10 , C01P2004/16 , C01P2004/32 , C01P2004/64 , B22F2202/11 , B22F1/0062
摘要： A method for creating an organically capped Group IV semiconductor nanoparticle is disclosed. The method includes flowing a Group IV semiconductor precursor gas into a chamber. The method also includes generating a set of Group IV semiconductor precursor radical species from the Group IV semiconductor precursor gas with a laser pyrolysis apparatus, wherein the set of the Group IV semiconductor precursor radical species nucleate to form the Group IV semiconductor nanoparticle; and flowing an organic capping agent precursor gas into the chamber. The method further includes generating a set of organic capping agent radical species from the organic capping agent precursor gas, wherein the set of organic capping agent radical species reacts with a surface of the Group IV semiconductor nanoparticle and forms the organically capped Group IV semiconductor nanoparticle.
摘要翻译：公开了一种用于产生有机封端的IV族半导体纳米颗粒的方法。该方法包括将IV族半导体前体气体流入室中。该方法还包括用激光热解装置从第IV族半导体前体气体生成一组IV族半导体前体基团物质，其中该组IV族半导体前体自由基团成核形成第IV族半导体纳米颗粒; 并将有机封端剂前体气体流入室中。该方法还包括从有机封端剂前体气体产生一组有机封端剂自由基物质，其中该组有机封端剂自由基物质与第IV族半导体纳米颗粒的表面反应并形成有机封端的第IV族半导体纳米颗粒。

7. 发明申请

WO2008091393B1 GROUP IV NANOPARTICLES AND FILMS THEREOF 审中-公开
标题翻译：第IV组纳米颗粒及其薄膜
公开(公告)号：WO2008091393B1
公开(公告)日：2008-12-11
申请号：PCT/US2007076549
申请日：2007-08-22
申请人： INNOVALIGHT INC , KELMAN MAXIM , LI XUEGENG , YU PINGRONG , VANHEUSDEN KAREL , JURBERGS DAVID
发明人： KELMAN MAXIM , LI XUEGENG , YU PINGRONG , VANHEUSDEN KAREL , JURBERGS DAVID
IPC分类号： B22F1/00 , B82B1/00 , B82B3/00 , C01B33/02 , C01B33/027
CPC分类号： C01B33/027 , B22F1/0018 , B22F1/0022 , B22F9/12 , B22F2998/00 , B22F2999/00 , B82Y10/00 , B82Y30/00 , C01B32/05 , C01B33/029 , H01L21/2236 , H01L29/0665 , H01L29/0673 , H01L29/068 , B22F3/22 , B22F7/04 , B22F2202/13 , B22F1/0074
摘要： A set of nanoparticles is disclosed. Each nanoparticle of the set of nanoparticles is comprised of a set of Group IV atoms arranged in a substantially spherical configuration. Each manoparticle of the set of nanoparticles further having a sphericity of between about 1.0 and about 2.0; a diameter of between about 4 nm and about 100 nm; and a sintering temperature less than a melting temperature of the set of Group IV atoms.
摘要翻译：公开了一组纳米粒子。该组纳米粒子中的每个纳米粒子由以基本球形构型排列的一组IV族原子组成。该组纳米颗粒的每个人造颗粒进一步具有介于约1.0和约2.0之间的球形度; 约4nm至约100nm的直径; 以及小于该组第IV族原子的熔化温度的烧结温度。

8. 发明申请

WO2007117265A3 STABLY PASSIVATED GROUP IV SEMICONDUCTOR NANOPARTICLES AND METHODS AND COMPOSITIONS THEREOF 审中-公开
公开(公告)号：WO2007117265A3
公开(公告)日：2007-10-18
申请号：PCT/US2006/031511
申请日：2006-08-11
申请人： INNOVALIGHT, INC. , JURBERGS, David , ROGOJINA, Elena, V.
发明人： JURBERGS, David , ROGOJINA, Elena, V.
IPC分类号： B32B5/16 , B05D7/00
摘要： Group IV semiconductor nanoparticles that have been stably passivated with an organic passivation layer, methods for producing the same, and compositions utilizing stably passivated Group IV semiconductor nanoparticles are described. In some embodiments, the stably passivated Group IV semiconductor nanoparticles are luminescent Group IV semiconductor nanoparticles with high photoluminescent quantum yields. The stably passivated Group IV semiconductor nanoparticles can be used in compositions useful in a variety of optoelectronic devices.

9. 发明申请

WO2008039757A3 SEMICONDUCTOR DEVICES AND METHODS FROM GROUP IV NANOPARTICLE MATERIALS 审中-公开
标题翻译：第四族纳米材料的半导体器件和方法
公开(公告)号：WO2008039757A3
公开(公告)日：2008-11-20
申请号：PCT/US2007079393
申请日：2007-09-25
申请人： INNOVALIGHT INC , POPLAVSKYY DMITRY , ANTONIADIS HOMER , JURBERGS DAVID , KELMAN MAXIM , LEMMI FRANCESCO , YU PINGRONG
发明人： POPLAVSKYY DMITRY , ANTONIADIS HOMER , JURBERGS DAVID , KELMAN MAXIM , LEMMI FRANCESCO , YU PINGRONG
IPC分类号： H01L31/18 , H01L31/068 , H01L31/075
CPC分类号： H01L31/076 , H01L31/1804 , H01L31/1824 , Y02E10/545 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A device for generating electricity from solar radiation is disclosed. The device includes a substrate; an insulating layer formed above the substrate; and a first electrode formed above the insulating layer. The device also includes a first doped Group IV nanoparticle thin film deposited on the first electrode; and a second doped Group IV nanoparticle thin film deposited on the first doped Group IV nanoparticle thin film. The device further includes a third doped Group IV nanoparticle thin film deposited on the second doped Group IV nanoparticle thin film; a fourth doped Group IV nanoparticle thin film deposited on the third doped Group IV nanoparticle thin film; and, a second electrode formed on the fourth doped Group IV nanoparticle thin film. Wherein, when solar radiation is applied to the fourth doped Group IV nanoparticle thin film, an electrical current is produced.
摘要翻译：公开了一种用于从太阳辐射发电的装置。该装置包括基板; 形成在基板上方的绝缘层; 以及形成在所述绝缘层之上的第一电极。该器件还包括沉积在第一电极上的第一掺杂的IV族纳米颗粒薄膜; 以及沉积在第一掺杂的IV族纳米颗粒薄膜上的第二掺杂的IV族纳米颗粒薄膜。该器件还包括沉积在第二掺杂的IV族纳米颗粒薄膜上的第三掺杂的IV族纳米颗粒薄膜; 沉积在第三掺杂的IV族纳米颗粒薄膜上的第四掺杂的IV族纳米颗粒薄膜; 以及形成在第四掺杂IV族纳米颗粒薄膜上的第二电极。其中当向第四掺杂的IV族纳米颗粒薄膜施加太阳辐射时，产生电流。

10. 发明申请

WO2008118865A3 OPTIMIZED LASER PYROLYSIS REACTOR AND METHODS THEREFOR 审中-公开
标题翻译：优化的激光热裂解反应器及其方法
公开(公告)号：WO2008118865A3
公开(公告)日：2008-10-02
申请号：PCT/US2008/058036
申请日：2008-03-24
申请人： INNOVALIGHT, INC. , LI, Xuegeng , JURBERGS, David
发明人： LI, Xuegeng , JURBERGS, David
IPC分类号： B01J19/12 , C01B33/027 , C09K11/59 , B82B1/00 , B82B3/00
摘要： An apparatus for making a set of Group IV nanoparticles is disclosed. The apparatus includes a top plate, the top plate further including an outlet port; a bottom plate; and a casing extending between the top plate and the bottom plate. The apparatus also includes a particle collector assembly configured to be in fluid communication with the outlet port; and a primary precursor tubing assembly passing through the bottom plate into the casing, the primary precursor tubing assembly including a primary precursor tubing assembly nozzle. The apparatus further includes a set of secondary precursor tubing assemblies passing through the bottom plate into the casing, wherein each secondary precursor tubing assembly of the set of secondary precursor tubing assemblies further includes a set of secondary precursor tubing assembly nozzles positioned orthogonally to the primary precursor tubing assembly nozzle, the set of secondary precursor tubing assembly nozzles further configured to be adjusted to a first height above primary precursor tubing assembly nozzle. The apparatus also includes a laser configured to generate a laser beam, the laser beam being substantially perpendicular to the primary precursor tubing assembly nozzle in the reaction zone, wherein the laser may be adjusted to a second height above primary precursor tubing assembly nozzle.
摘要翻译：公开了一种用于制造一组IV族纳米颗粒的装置。该设备包括顶板，顶板还包括出口端口; 底板; 以及在顶板和底板之间延伸的壳体。该设备还包括构造成与出口端口流体连通的颗粒收集器组件; 以及穿过所述底板进入所述壳体的主前驱物管道组件，所述主前驱物管道组件包括主前驱物管道组件喷嘴。该设备还包括一组次级前驱物管道组件，该组次级前驱物管道组件穿过底板进入套管，其中该组次级前驱物管道组件中的每个次级前驱物管道组件还包括一组次级前驱物管道组件喷嘴，该一组次级前驱物管道组件喷嘴正交于主要前驱物管组件喷嘴组，所述一组次级前驱物管组件喷嘴进一步构造成被调节到主要前驱物管组件喷嘴上方的第一高度。该设备还包括配置成产生激光束的激光器，该激光束基本垂直于反应区中的主前驱体管组件喷嘴，其中激光器可被调节至主前驱体管组件喷嘴上方的第二高度。 p>

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