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1. 发明申请

WO2012082926A3 HIGH FIDELITY DOPING PASTE AND METHODS THEREOF 审中-公开
公开(公告)号：WO2012082926A3
公开(公告)日：2012-06-21
申请号：PCT/US2011/064954
申请日：2011-12-14
申请人： E. I. du Pont de Nemours and Company , INNOVALIGHT INC , ROGOJINA, Elena, V. , KELMAN, Maxim , SCARDERA, Giuseppe
发明人： ROGOJINA, Elena, V. , KELMAN, Maxim , SCARDERA, Giuseppe
IPC分类号： H01L31/0288 , H01L31/18
摘要： A high-fidelity dopant paste is disclosed. The high-fidelity dopant paste includes a solvent, a set of non-glass matrix particles dispersed into the solvent, and a dopant.

2. 发明申请

WO2012012167A1 METHODS OF FORMING A FLOATING JUNCTION ON A SOLAR CELL WITH A PARTICLE MASKING LAYER 审中-公开
标题翻译：在具有颗粒掩蔽层的太阳能电池上形成浮动接头的方法
公开(公告)号：WO2012012167A1
公开(公告)日：2012-01-26
申请号：PCT/US2011/042330
申请日：2011-06-29
申请人： INNOVALIGHT, INC , ABBOTT, Malcolm , KELMAN, Maxim , ROSENFELD, Eric , ROGOJINA, Elena , SCARDERA, Giuseppe
发明人： ABBOTT, Malcolm , KELMAN, Maxim , ROSENFELD, Eric , ROGOJINA, Elena , SCARDERA, Giuseppe
IPC分类号： H01L21/00
CPC分类号： H01L21/2255 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a floating junction on a substrate includes depositing a set of masking particles on the rear surface of a substrate in a set of patterns and heating the substrate to create a particle masking layer. The substrate is exposed to a phosphorous deposition wherein a front surface PSG layer, a front surface phosphorous diffusion, a rear surface PSG layer, and a rear surface phosphorous diffusion are formed, and wherein a first phosphorous dopant surface concentration in the substrate proximate to the set of patterns is less than a second dopant surface concentration in the substrate not proximate to the set of patterns. The substrate is further exposed to a set of etchants wherein the front surface PSG layer and the rear surface PSG layer are removed; depositing front and rear surface SiNx layers; and forming a rear metal contact on the rear surface through the rear surface SiNx layer.
摘要翻译：在衬底上形成浮点的方法包括在一组图案中在衬底的后表面上沉积一组掩模颗粒，并加热该衬底以产生一个微粒掩蔽层。将基板暴露于磷沉积物中，其中形成前表面PSG层，前表面磷扩散层，后表面PSG层和后表面磷扩散层，并且其中基板中的第一磷掺杂剂表面浓度接近于图案的集合小于衬底中不接近于图案集合的第二掺杂剂表面浓度。将衬底进一步暴露于一组蚀刻剂，其中去除前表面PSG层和后表面PSG层; 沉积前后表面SiNx层; 并通过后表面SiNx层在后表面上形成后金属接触。

3. 发明申请

WO2011022329A1 METHODS FOR DISTINGUISHING A SET OF HIGHLY DOPED REGIONS FROM A SET OF LIGHTLY DOPED REGIONS ON A SILICON SUBSTRATE 审中-公开
标题翻译：用于从一组硅基底板上的一组轻度区域中分离出一组高度区域的方法
公开(公告)号：WO2011022329A1
公开(公告)日：2011-02-24
申请号：PCT/US2010/045614
申请日：2010-08-16
申请人： INNOVALIGHT, INC. , KELMAN, Maxim , SCARDERA, Giuseppe
发明人： KELMAN, Maxim , SCARDERA, Giuseppe
IPC分类号： H01L21/22 , C30B15/04
CPC分类号： H01L22/12 , G01J3/42 , G01N21/3563 , G01N21/9501
摘要： A method of distinguishing a set of highly doped regions from a set of lightly doped regions on a silicon substrate is disclosed. The method includes providing the silicon substrate, the silicon substrate configured with the set of lightly doped regions and the set of highly doped regions. The method further includes illuminating the silicon substrate with an electromagnetic radiation source, the electromagnetic radiation source transmitting a wavelength of light above about 1100 nm. The method also includes measuring a wavelength absorption of the set of lightly doped regions and the set of heavily doped regions with a sensor, wherein for any wavelength above about 1100 nm, the percentage absorption of the wavelength in the lightly doped regions is substantially less than the percentage absorption of the wavelength in the heavily doped regions.
摘要翻译：公开了一种在硅衬底上区分一组高掺杂区域与一组轻掺杂区域的方法。该方法包括提供硅衬底，配置有该组轻掺杂区域的硅衬底和该高掺杂区域组。该方法还包括用电磁辐射源照射硅衬底，电磁辐射源透射高于约1100nm的光的波长。该方法还包括用传感器测量该组轻掺杂区域和重掺杂区域的波长吸收，其中对于高于约1100nm的任何波长，在轻掺杂区域中波长的百分比吸收率基本上小于在重掺杂区域中波长的百分比吸收。

4. 发明申请

WO2011162909A1 METHODS OF FORMING A MULTI-DOPED JUNCTION WITH POROUS SILICON 审中-公开
标题翻译：用多孔硅形成多层结的方法
公开(公告)号：WO2011162909A1
公开(公告)日：2011-12-29
申请号：PCT/US2011/038359
申请日：2011-05-27
申请人： INNOVALIGHT, INC. , SCARDERA, Giuseppe , ANTONIADIS, Homer , CRAVALHO, Nick , KELMAN, Maxim , ROGOJINA, Elena , VANHEUSDEN, Karel
发明人： SCARDERA, Giuseppe , ANTONIADIS, Homer , CRAVALHO, Nick , KELMAN, Maxim , ROGOJINA, Elena , VANHEUSDEN, Karel
IPC分类号： H01L21/22
CPC分类号： H01L21/2255 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Forming a multi-doped junction including providing a substrate comprising a front crystalline substrate surface and doped with boron atoms; forming a mask on the front crystalline surface, the mask comprising exposed areas and non-exposed areas; exposing the mask to an etchant, wherein porous silicon is formed on the front crystalline substrate surface defined by the exposed mask areas; removing the mask; exposing the substrate to a dopant source comprising POCh gas, wherein a PSG layer is formed on the front substrate surface; and heating the substrate in a drive-in ambient. A first diffused region with a first sheet resistance is formed under the porous silicon and a second diffused region with a second sheet resistance'is formed under the front crystalline substrate surface without the porous silicon. The first sheet resistance is substantially smaller than the second sheet resistance.
摘要翻译：形成多掺杂结，包括提供包括前晶体衬底表面并掺杂硼原子的衬底; 在前结晶表面上形成掩模，所述掩模包括暴露区域和未曝光区域; 将掩模暴露于蚀刻剂，其中在由暴露的掩模区限定的前结晶衬底表面上形成多孔硅; 去除面膜; 将衬底暴露于包含POCh气体的掺杂剂源，其中在前衬底表面上形成PSG层; 并在驱动环境中加热衬底。在多孔硅的下方形成具有第一薄层电阻的第一扩散区域，并且在没有多孔硅的正面晶体衬底表面下方形成具有第二薄层电阻的第二扩散区域。第一薄层电阻基本上小于第二薄层电阻。

5. 发明申请

WO2011091409A1 METHODS OF FORMING A MULTI-DOPED JUNCTION WITH SILICON-CONTAINING PARTICLES 审中-公开
标题翻译：用含硅颗粒形成多层结的方法
公开(公告)号：WO2011091409A1
公开(公告)日：2011-07-28
申请号：PCT/US2011/022377
申请日：2011-01-25
申请人： INNOVALIGH, INC. , SCARDERA, Giuseppe , KAN, Shihai , KELMAN, Maxim , POPLAVSKYY, Dmitry
发明人： SCARDERA, Giuseppe , KAN, Shihai , KELMAN, Maxim , POPLAVSKYY, Dmitry
IPC分类号： H01L21/22 , H01L21/38
CPC分类号： H01L21/2255 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front substrate surface. The method further includes depositing an ink on the front substrate surface in a ink pattern, the ink comprising a set of silicon-containing particles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCI3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas at a second temperature and for a second time period, wherein a PSG layer is formed on the front substrate surface and on the densified film ink pattern; and heating the substrate in a drive-in ambient to a third temperature; wherein a first diffused region with a first sheet resistance is formed under the front substrate surface covered by the densified film ink pattern, and a second diffused region with a second sheet resistance is formed under the front substrate surface not covered with the densified film ink pattern, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.
摘要翻译：公开了一种在衬底上形成多掺杂结的方法。该方法包括提供掺杂有硼原子的衬底，该衬底包括前衬底表面。该方法还包括以油墨图案在前基板表面上沉积油墨，该油墨包括一组含硅颗粒和一组溶剂。该方法还包括将烘烤环境中的基材加热到第一温度并在第一时间段内，以便产生致密的薄膜油墨图案。该方法还包括将基底暴露于具有沉积环境的扩散炉中的掺杂剂源，沉积环境包括POCI3，载体N2气体，主N 2气体和在第二温度下的反应性O 2气体，并且第二次其中在前基板表面和致密薄膜墨图案上形成PSG层; 以及将驱动环境中的衬底加热至第三温度; 其特征在于，在被所述致密膜油墨图案覆盖的前面基板表面的下方形成有具有第一薄层电阻的第一扩散区域，在未被所述致密化薄膜墨水图案覆盖的所述前面基板表面的下方形成具有第二薄层电阻的第二扩散区域，并且其中所述第一薄层电阻基本上小于所述第二薄层电阻。

6. 发明申请

WO2009128828A1 SELECTIVE FUNCTIONALIZATION OF DOPED GROUP IV SURFACES USING LEWIS ACID / LEWIS BASE INTERACTION 审中-公开
标题翻译：使用LEWIS ACID / LEWIS BASE相互作用的DOPED组IV表面的选择性功能化
公开(公告)号：WO2009128828A1
公开(公告)日：2009-10-22
申请号：PCT/US2008/060642
申请日：2008-04-17
申请人： INNOVALIGHT, INC. , ROGOJINA, Elena , KELMAN, Maxim , KIM, Anthony, Young
发明人： ROGOJINA, Elena , KELMAN, Maxim , KIM, Anthony, Young
IPC分类号： H01L21/00 , H01L29/00
CPC分类号： B82Y30/00 , C01B33/02
摘要： A method of selectively attaching a capping agent to a Group IV semiconductor surface is disclosed. The method includes providing the Group IV semiconductor surface, the Group IV semiconductor surface including a set of covalently bonded Group IV semiconductor atoms and a set of surface boron atoms. The method also includes exposing the set of boron atoms to a set of capping agents, each capping agent of the set of capping agents having a central atom and a set of functional groups, wherein the central atom includes at least a lone pair of electrons; wherein a complex is formed between at least some surface boron atoms of the set of surface boron atoms and the central atom of at least some capping agents of the set of capping agents.
摘要翻译：公开了一种将封端剂选择性地附接到IV族半导体表面的方法。该方法包括提供IV族半导体表面，该IV族半导体表面包括一组共价键合的IV族半导体原子和一组表面硼原子。该方法还包括将该组硼原子暴露于一组封端剂，该组封端剂的每种封端剂具有中心原子和一组官能团，其中中心原子包括至少一对电子; 其中在所述一组表面硼原子的至少一些表面硼原子与该组封端剂的至少一些封端剂的中心原子之间形成络合物。

7. 发明申请

WO2011066272A1 METHODS OF USING A SET OF SILICON NANOPARTICLE FLUIDS TO CONTROL IN SITU A SET OF DOPANT DIFFUSION PROFILES 审中-公开
标题翻译：使用一套硅纳米颗粒流体控制在一组痰液扩散型材中的方法
公开(公告)号：WO2011066272A1
公开(公告)日：2011-06-03
申请号：PCT/US2010/057782
申请日：2010-11-23
申请人： INNOVALIGHT, INC. , ROGOJINA, Elena , POPLAVSKYY, Dmitry , KELMAN, Maxim , KRAY, Daniel , SCARDERA, Guiseppe , BURROWS, Michael
发明人： ROGOJINA, Elena , POPLAVSKYY, Dmitry , KELMAN, Maxim , KRAY, Daniel , SCARDERA, Guiseppe , BURROWS, Michael
IPC分类号： H01L31/00
CPC分类号： H01L21/2225 , H01L21/223 , H01L21/2257 , H01L31/022425 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a multi-doped junction is disclosed. The method includes providing a first substrate and a second substrate. The method also includes depositing a first ink on a first surface of each of the first substrate and the second substrate, the first ink comprising a first set of nanoparticles and a first set of solvents, the first set of nanoparticles comprising a first concentration of a first dopant. The method further includes depositing a second ink on a second surface of each of the first substrate and the second substrate, the second ink comprising a second set of nanoparticles and a second set of solvents, the second set of nanoparticles comprising a second concentration of a second dopant.
摘要翻译：公开了形成多掺杂结的方法。该方法包括提供第一基板和第二基板。该方法还包括在第一基底和第二基底中的每一个的第一表面上沉积第一墨水，第一墨水包括第一组纳米颗粒和第一组溶剂，第一组纳米颗粒包含第一浓度的第一掺杂剂。所述方法还包括在所述第一基底和所述第二基底中的每一个的第二表面上沉积第二墨，所述第二墨包含第二组纳米颗粒和第二组溶剂，所述第二组纳米颗粒包含第二浓度的第二掺杂剂。

8. 发明申请

WO2009131845A2 JUNCTION FORMATION ON WAFER SUBSTRATES USING GROUP IV NANOPARTICLES 审中-公开
标题翻译：使用第四组纳米颗粒在基底上形成结晶
公开(公告)号：WO2009131845A2
公开(公告)日：2009-10-29
申请号：PCT/US2009/040069
申请日：2009-04-09
申请人： INNOVALIGHT, INC. , TERRY, Mason , ANTONIADIS, Homer , POPLAVSKYY, Dmitry , KELMAN, Maxim
发明人： TERRY, Mason , ANTONIADIS, Homer , POPLAVSKYY, Dmitry , KELMAN, Maxim
IPC分类号： H01L21/265 , H01L31/042
CPC分类号： H01L21/2256 , H01L21/02532 , H01L21/02573 , H01L21/02601 , H01L21/02628 , H01L21/2257 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.
摘要翻译：公开了形成扩散区域的方法。该方法包括在晶片的表面上沉积纳米颗粒油墨以形成非致密化薄膜，所述纳米颗粒油墨具有一组纳米颗粒，其中该组纳米颗粒中的至少一些纳米颗粒包括其中的掺杂剂原子。该方法还包括将非致密化薄膜加热至第一温度并且在第一时间段内从沉积的纳米颗粒油墨中除去溶剂; 以及将所述非致密化薄膜加热至第二温度并持续第二时间以形成致密的薄膜，其中至少一些所述掺杂剂原子扩散到所述晶片中以形成所述扩散区域。

9. 发明申请

WO2009131587A1 JUNCTION FORMATION ON WAFER SUBSTRATES USING GROUP IV NANOPARTICLES 审中-公开
标题翻译：用第四族纳米粒子在晶片基底上形成结界
公开(公告)号：WO2009131587A1
公开(公告)日：2009-10-29
申请号：PCT/US2008/061611
申请日：2008-04-25
申请人： INNOVALIGHT, INC. , TERRY, Mason , ANTONIADIS, Homer , POPLAVSKYY, Dmitry , KELMAN, Maxim
发明人： TERRY, Mason , ANTONIADIS, Homer , POPLAVSKYY, Dmitry , KELMAN, Maxim
IPC分类号： H01L21/225 , H01L21/336 , H01L31/18 , H01L21/20 , H01L21/8238
CPC分类号： H01L21/02628 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02573 , H01L21/2256 , H01L21/2257 , H01L21/823892 , H01L29/66651 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.
摘要翻译：公开了形成扩散区域的方法。该方法包括在晶片的表面上沉积纳米粒子墨水以形成非致密的薄膜，纳米粒子墨水具有一组纳米粒子，其中纳米粒子组的至少一些纳米粒子在其中包括掺杂剂原子。该方法还包括将未致密化的薄膜加热至第一温度并持续第一时间段以从沉积的纳米颗粒墨水中去除溶剂; 和将未致密化的薄膜加热至第二温度并持续第二时间周期以形成致密化薄膜，其中至少一些掺杂剂原子扩散到晶片中以形成扩散区。

10. 发明申请

WO2008073767A2 METHODS OF FILLING A SET OF INTERSTITIAL SPACES OF A NANOPARTICLE THIN FILM WITH A DIELECTRIC MATERIAL 审中-公开
标题翻译：用介电材料填充一组纳米颗粒薄膜的间隙空间的方法
公开(公告)号：WO2008073767A2
公开(公告)日：2008-06-19
申请号：PCT/US2007/086432
申请日：2007-12-05
申请人： INNOVALIGHT, INC. , LEMMI, Francesco , ROGOJINA, Elena V. , YU, Pingrong , JURBERGS, David , ANTONIADIS, Homer , KELMAN, Maxim
发明人： LEMMI, Francesco , ROGOJINA, Elena V. , YU, Pingrong , JURBERGS, David , ANTONIADIS, Homer , KELMAN, Maxim
IPC分类号： H01L21/208
CPC分类号： H01L21/02601 , H01L21/0237 , H01L21/02524 , H01L21/02529 , H01L21/02532 , H01L21/02628 , H01L21/02667 , Y10S977/892 , Y10S977/893
摘要： A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30°C and about 300°C, and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1 x 10 -7 Torr and about 1 x 10 -4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.
摘要翻译：公开了一种形成致密纳米颗粒薄膜的方法。该方法包括将衬底放置在第一腔室中; 和沉积纳米粒子墨水，纳米粒子墨水包括一组第IV族半导体粒子和溶剂。该方法还包括将纳米粒子墨水加热至约30℃和约300℃之间的第一温度以及约1分钟和约60分钟之间的第一时间段，其中溶剂基本上被除去，并且多孔致密物是形成; 以及将衬底放置在第二室中，第二室的压力在约1×10 -7 Torr和约1×10 -4 Torr之间。该方法还包括在多孔压制物上沉积电介质材料; 其中形成致密的纳米颗粒薄膜。

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