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1. 发明申请

WO2011069988A3 ELECTROMECHANICAL MICROSWITCH FOR SWITCHING AN ELECTRICAL SIGNAL, MICROELECTROMECHANICAL SYSTEM, INTEGRATED CIRCUIT, AND METHOD FOR PRODUCING AN INTEGRATED CIRCUIT 审中-公开
标题翻译：机电微动开关，用于切换电信号，微机电系统，集成电路和方法用于制造集成电路
公开(公告)号：WO2011069988A3
公开(公告)日：2011-09-15
申请号：PCT/EP2010069019
申请日：2010-12-07
申请人： IHP GMBH , KAYNAK MEHMET , BIRKHOLZ MARIO , TILLACK BERND , EHWALD KARL-ERNST , SCHOLZ RENE
发明人： KAYNAK MEHMET , BIRKHOLZ MARIO , TILLACK BERND , EHWALD KARL-ERNST , SCHOLZ RENE
IPC分类号： H01H59/00
CPC分类号： H01H59/0009 , H01H1/0036
摘要： The invention relates to a microelectromechanical system (MEMS) (100, 200) having an electromechanical microswitch (1) for switching an electrical signal (S), in particular a radio frequency signal (RFMEMS), in particular in the GHz range. Said system comprises, according to the invention: a multi-level conductor stack (102, 202) disposed on a substrate (101, 201), the conductors (111-115, 211-215) thereof being insulated from each other in different conductor levels (M1-M5) by means of electrically insulating layers (103, 203) and electrically connected to each other by means of interlayer contacts (104, 204), the electromechanical switch (1) integrated in a recess (105, 205) of the multilevel conductor stack (102, 202) and having a contact link (10), a counter-contact (20), and at least one drive electrode (30, 50) for the contact link (10), wherein the contact link (10), the counter-contact (20), and the at least one drive electrode (30, 50) each are part of a conductor level (M1-M5) of the multilevel conductor stack (102, 202).
摘要翻译：本发明涉及微机电系统（MEMS）（100，200），其具有用于切换的电信号（S）微机电开关（1），特别是射频信号（RFMEMS），特别是在GHz范围内。这具有根据在不同导体平面对本发明的在衬底上（101，201），其设置多级Leitbahnschichtstapel（102，202），其印制导线（111-115，211-215）（M1-M5）具有电绝缘层（103， 203）通过触点（104借助于彼此绝缘，204）电连接到彼此以在凹部（105，多级Leitbahnschichtstapels（102 205），202）集成电 - 机械开关（1）具有接触摇杆（10），配合触头（20）和至少一个驱动电极（30，50）用于接触摇杆（10），其中所述接触摇杆（10），所述配合触头（20）和所述至少一个驱动电极（30，50）是一个管理层次的每个部分（M1 M5）多级Leitbahnschichtstapels（102，202）的。

2. 发明申请

WO0017423A2 METHOD FOR PRODUCING AN AMORPHOUS OR POLYCRYSTALLINE LAYER ON AN INSULATING REGION 审中-公开
标题翻译：用于生产无定形的或多晶的层上的场绝缘体
公开(公告)号：WO0017423A2
公开(公告)日：2000-03-30
申请号：PCT/DE9903069
申请日：1999-09-20
申请人： INST HALBLEITERPHYSIK GMBH , TILLACK BERND , HEINEMANN BERND , KNOLL DIETER , EHWALD KARL ERNST , WOLANSKY DIRK
发明人： TILLACK BERND , HEINEMANN BERND , KNOLL DIETER , EHWALD KARL-ERNST , WOLANSKY DIRK
IPC分类号： H01L21/285 , H01L21/20 , H01L21/28 , H01L21/3205 , H01L21/331 , H01L29/732 , C30B29/06
CPC分类号： H01L21/32055 , H01L21/02381 , H01L21/02532 , H01L21/02639
摘要： The invention aims to provide a method for producing an amorphous or polycrystalline layer on an insulating area which in relation to known methods increases the thickness of the amorphous or polycrystalline layer and improves the homogeneity of the deposition, thus resulting in reduced surface roughness while at least maintaining the insulating properties of the insulating area. To this end a suitable seeding layer (28, 29), preferably silicon nitride, is deposited so that the seeding capacity and insulating properties of the SiO2 insulating area (14, 31) during deposition of the amorphous or polycrystalline Si or SiGe layers (15, 16, 17, 33) are improved.
摘要翻译：本发明的目的是提出一种用于在绝缘体区，其中相比于以前的方法中，无定形的或多晶的层的厚度越大，则沉积的均匀性得到提高，因此，表面粗糙度被降低生产无定形的或多晶的层的方法。在这种情况下，应该至少保持该绝缘体区的绝缘性能。根据本发明，这个目的是通过将合适的（28，29）籽晶层，优选氮化硅，Bekeimungsvermögen和绝缘在非晶或多晶层（15，16的沉积由SiO 2制成的绝缘区域（14，31）的特性，17这样来实现，33）由Si或SiGe的提高。

3. 发明申请

WO2009003958A3 CORROSION-RESISTANT MEMS COMPONENT, AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：耐腐蚀MEMS组件及其制造方法
公开(公告)号：WO2009003958A3
公开(公告)日：2009-02-26
申请号：PCT/EP2008058316
申请日：2008-06-27
申请人： IHP GMBH , DREWS JUERGEN , EHWALD KARL-ERNST , SCHULZ KATRIN
发明人： DREWS JUERGEN , EHWALD KARL-ERNST , SCHULZ KATRIN
IPC分类号： B81B7/00 , G01N11/16
CPC分类号： B81B7/0012 , G01N11/16
摘要： Disclosed is a MEMS component comprising a monolithically integrated electronic component with a multilevel stack of strip conductor layers which is arranged on a substrate and into which a self-supporting, elastically movable, metallic actuator is integrated that is disposed on the level of a strip conductor plane within the stack of strip conductor layers. The actuator is connected, by means of via contacts, to superimposed or subjacent strip conductor planes which are separated from the strip conductor plane of the actuator by a respective intermediate insulator layer with the exception of a recess in the region of the actuator. The actuator is formed by a metallically conductive layer or layer combination which is resistant to corrosive gases or liquids and contains or is made of titanium nitride.
摘要翻译：具有设置在衬底的多级Leitbahnschichtstapel成一个自支撑的，可弹性弯曲，金属致动器是集成的，其被布置在所述多级Leitbahnschichtstapel上的导体轨道平面的高度，并通过接触MEMS装置，其包含一个单片集成电子元件被连接到上面或下面设置导电轨道平面，其是除了在从致动器的互连平面通过相应的中间层绝缘层分离的致动器的区域中的凹部，其中，所述致动器由金属的导电性和腐蚀性气体或液体层的耐热层或组合形成的，氮化钛包含或组成为氮化钛。

4. 发明申请

WO0247113A3 LAYERS IN SUBSTRATE WAFERS 审中-公开
标题翻译：基片中的层
公开(公告)号：WO0247113A3
公开(公告)日：2002-08-22
申请号：PCT/EP0114318
申请日：2001-12-06
申请人： IHP GMBH , HEINEMANN BERND , EHWALD KARL-ERNST , KNOLL DIETER , TILLAK BERND , WOLANSKY DIRK , SCHLEY PETER
发明人： HEINEMANN BERND , EHWALD KARL-ERNST , KNOLL DIETER , TILLAK BERND , WOLANSKY DIRK , SCHLEY PETER
IPC分类号： H01L21/265 , H01L21/74 , H01L21/8238 , H01L21/8249 , H01L27/06 , H01L27/092 , H01L29/10 , H01L29/78
CPC分类号： H01L21/74 , H01L21/26506 , H01L21/823807 , H01L21/823892 , H01L29/1083
摘要： The invention relates to layers in substrate wafers. The aim of the invention is to provide layers in substrate wafers with which the drawbacks of conventional assemblies are overcome in order to achieve, on the one hand, an adequate resistance to latch-up in highly scaled, digital CMOS circuits with comparatively low costs and, on the other hand, to ensure low substrate losses/couplings for analog high-frequency circuits and, in addition, to influence the component behavior in a non-destructive manner. To these ends, the invention provides that in a highly resistive p-Si substrate (2) with one or more buried high-carbon Si layers (3) under an epitaxial layer and with the Si cap layer (4), an implantation dose, which is greater in comparison to conventional substrate wafers, is used for retrograde trough profiles by suppressing the dopant diffusion as well as the generation of defects when remedying implant defects, thereby achieving a reduction of the trough resistance, and finally, an increase in the resistance to latch-up.
摘要翻译：本发明涉及基片切片中的层。本发明的目的是提供一种层在衬底晶片，其中的常规装置的缺点，以在一侧上实现高度缩放CMOS数字电路的足够闭锁强度与相对低的成本，而在另一被克服用于模拟高频电路以保证和超出组件行为的侧面低基板损耗/耦合不会产生不利影响。根据本发明，这个目的是在与一个或多个掩埋富碳的硅层（3）具有外延层来实现在高电阻的p型Si衬底（2）中，Si盖层（4）通过抑制Dotantendiffusion和相比于传统的衬底晶片，因此阱电阻的降低，并最终增加闭锁强度等缺陷产生在注入损伤的退火施加较大的注入剂量为逆行井轮廓。

5. 发明申请

WO0014806A9 VERTICAL BIPOLAR TRANSISTOR AND METHOD FOR THE PRODUCTION THEREOF 审中-公开
标题翻译：用于制造垂直双极晶体管AND PROCESS
公开(公告)号：WO0014806A9
公开(公告)日：2000-08-17
申请号：PCT/DE9902884
申请日：1999-09-08
申请人： INST HALBLEITERPHYSIK GMBH , EHWALD KARL ERNST , KNOLL DIETER , HEINEMANN BERND
发明人： EHWALD KARL-ERNST , KNOLL DIETER , HEINEMANN BERND
IPC分类号： H01L21/28 , H01L21/331 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L29/08 , H01L29/732 , H01L29/737 , H01L29/10
CPC分类号： H01L29/66242 , H01L21/8249 , H01L29/0821 , H01L29/7378
摘要： The invention relates to a vertical bipolar transistor and a method for the production thereof. The aim of the invention is to produce a vertical bipolar transistor and to disclose a method for the production thereof, whereby excellent high frequency properties can be obtained for said transistor using the simplest possible production technology involving an implanted epitaxy-free collector and only one polysilicon layer spread over a large surface and which can be easily integrated into a conventional mainstream CMOS process without epitaxially produced trough areas. It is possible to simplify technology, while at the same time improving the high frequency parameters of vertical bipolar transistors by reducing the parasitic lateral and vertical components of the resistance of the collector, by means of a self-adjusting transistor construction in conjunction with a special method of production, whereby a highly doped monocrystalline base connection area surrounding the active base in a ring-like manner is removed in the region of the collector connection by reactive ion etching, together with the underlying less doped area of the collector or a part thereof.
摘要翻译：本发明涉及一种纵向双极晶体管及其制备方法。本发明的目的是提供一种垂直双极型晶体管及其制备方法，其中所述晶体管的高频特性优良可与最简单的可能的制造技术来实现，其与植入epitaxiefreien集电极管理和只有一个大面积沉积的多晶硅层且容易地在传统的“主流的方法 “CMOS工艺可以在没有外延制造阱区被集成。制造工艺的简化，同时提高在降低的寄生横向和垂直集电极电阻器部件的垂直双极型晶体管的高频参数是根据本发明通过自晶体管结构结合一特殊的制造方法，其中活性基环状由围绕高掺杂单晶硅基极连接区域在集电端子的区域实现反应离子蚀刻去除相同与更弱掺杂集电极的底层区域一起或与一部分。

6. 发明专利

DE10027684B4 未知
公开(公告)号：DE10027684B4
公开(公告)日：2005-09-01
申请号：DE10027684
申请日：2000-05-26
申请人： EHWALD KARL-ERNST , EHWALD RUDOLPH , KNOLL DIETER , WINKLER WOLFGANG , ZINKE HENNING
发明人： EHWALD RUDOLF , EHWALD KARL-ERNST , KNOLL DIETER , WINKLER WOLFGANG , ZINKE HENNING
IPC分类号： A61B5/00 , G01N11/16 , G01N11/00 , G01N11/10

7. 发明专利

DD146346A1 未知
公开(公告)号：DD146346A1
公开(公告)日：1981-02-04
申请号：DD21583579
申请日：1979-09-27
申请人： EHWALD KARL ERNST , GLUECK BERNHARD K K
发明人： EHWALD KARL-ERNST , GLUECK BERNHARD K K
IPC分类号： G01R29/24 , G01R31/26

8. 发明专利

DE19714087C2 未知
公开(公告)号：DE19714087C2
公开(公告)日：2000-06-21
申请号：DE19714087
申请日：1997-04-07
申请人： EHWALD RUDOLPH , EHWALD KARL ERNST , THOMAS ANDREAS , BEYER UWE
发明人： EHWALD RUDOLPH , EHWALD KARL-ERNST , THOMAS ANDREAS , BEYER UWE
IPC分类号： A61B5/00 , G01N1/34 , G01N11/08 , G01N11/00 , B01D61/00
摘要： The invention concerns a process for affinity viscosimetry and a viscosimetric affinity sensor on the basis of sensitive liquids with analyte-dependent viscosity which are localized within a perfusable dialysis chamber and contain colloidal constituents which are cross-linked by affinity bonds. The viscosimetric affinity sensor according to this invention is characterized by the spatial or temporal separation of analyte diffusion from the measurement of the flow resistance for such sensitive liquid flowing through a capillary, needle-like body or other liquid conductor, which integrated combination of a dialysis chamber with viscosimeter enables a researcher to make measurements under lab conditions that provide spatial separation of the dialysis process from the rheological analysis, as done under test conditions where the maximum shear rate of sensitive liquid in the viscosity sensor is at least twice that shear rate of sensitive liquid experienced in the dialysis chamber. An important advantage of the invention consists in small volume-displacement and negligible structural change within the matrix or organ of living tissue to be investigated.

9. 发明专利

DE19714087A1 Viscosimetric affinity sensor 未知
公开(公告)号：DE19714087A1
公开(公告)日：1998-10-15
申请号：DE19714087
申请日：1997-04-07
申请人： EHWALD RUDOLPH PROF DR , EHWALD KARL ERNST , THOMAS ANDREAS DR , BEYER UWE
发明人： EHWALD RUDOLPH PROF DR , EHWALD KARL-ERNST , THOMAS ANDREAS DR , BEYER UWE
IPC分类号： A61B5/00 , G01N1/34 , G01N11/08 , G01N11/00 , B01D61/00
摘要： The affinity sensor, according to viscosity, has a flow channel for the sensitive fluid with a dialysis chamber and a connected pump. The pressure control and flow channel geometry give a timed and/or spaced separation of the diffusion of the analytes in the sensitive fluid from the viscosity measurements. The pump power and the fluid flow channel are set so that the maximum shear speed occurs during the measurement process in the sensitive fluid. The maximum shear speed during the dialysis stage occurs in the dialysis chamber and increases by more than twofold to at least 5 s .

10. 发明专利

DD160382A3 未知
公开(公告)号：DD160382A3
公开(公告)日：1983-06-29
申请号：DD21325079
申请日：1979-05-30
申请人： EHWALD KARL ERNST , JAEGER ERWIN , RAUSCH BODO , ZIMMERMANN KLAUS PETER
发明人： EHWALD KARL-ERNST , JAEGER ERWIN , RAUSCH BODO , ZIMMERMANN KLAUS-PETER
IPC分类号： H01L21/324

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