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    • 3. 发明申请
    • Background visual effect processing method and device
    • 背景视觉效果处理方法和装置
    • US20150286498A1
    • 2015-10-08
    • US14394579
    • 2011-11-28
    • Xiang Wang
    • Xiang Wang
    • G06F9/48G06T1/20
    • G06F9/485G06F9/461G06F9/4881G06T1/20G06T2200/28H04N5/262
    • Disclosed are a method and an apparatus for processing a background visual effect. The method is registering dependence resources, running parameters and handlers corresponding to respective visual effect modes of a background, selecting a visual effect mode corresponding to the background according to a running instruction, and initializing the dependence resource, the running parameter and the handler corresponding to the selected visual effect mode to control the background to enter the running status of the selected visual effect mode, and switching the current running visual effect mode of the background according to a received switching instruction. Through the method and the apparatus for processing a background visual effect, background visual effects can be shared in different scenarios, the variety of background visual effects which can be implemented in the same scenario is enriched and the effect of user experience is improved.
    • 公开了一种用于处理背景视觉效果的方法和装置。 该方法是登录与背景的各种视觉效果模式相对应的依赖资源,运行参数和处理程序,根据运行指令选择与背景相对应的视觉效果模式,以及初始化依赖资源,运行参数和对应于 所选择的视觉效果模式来控制背景进入所选择的视觉效果模式的运行状态,并且根据接收到的切换指令切换当前运行的背景的视觉效果模式。 通过用于处理背景视觉效果的方法和装置,可以在不同的场景中共享背景视觉效果,丰富了在同一情景中可以实现的各种背景视觉效果,提高了用户体验的效果。
    • 5. 发明授权
    • Method for forming substrate with buried insulating layer
    • 用掩埋绝缘层形成衬底的方法
    • US08633090B2
    • 2014-01-21
    • US13383416
    • 2010-07-10
    • Xiang WangXing WeiMiao ZhangChenglu LinXi Wang
    • Xiang WangXing WeiMiao ZhangChenglu LinXi Wang
    • H01L21/762
    • H01L21/76256
    • A method for forming an edge-chamfered substrate with a buried insulating layer is provided, which comprises the following steps: providing a first substrate (S10); forming an etching mask layer on surfaces of the first substrate, wherein said etching mask layer is formed on the whole surfaces of the first substrate (S11); chamfering a glazed surface of the first substrate and the etching mask layer thereon by the edge grinding (S12); by rotary etching, etching the first substrate which is exposed by the edge grinding on the etching mask layer (S13); providing a second substrate (S14); and bonding the first substrate to the second substrate with a buried insulating layer (S15). The method avoids the edge collapses and the changes of the warp degree in subsequent processes.
    • 提供一种形成具有掩埋绝缘层的边缘倒角衬底的方法,包括以下步骤:提供第一衬底(S10); 在所述第一基板的表面上形成蚀刻掩模层,其中所述蚀刻掩模层形成在所述第一基板的整个表面上; 通过边缘磨削倒角第一基板的玻璃表面和其上的蚀刻掩模层(S12); 通过旋转蚀刻,蚀刻通过边缘研磨而暴露在蚀刻掩模层上的第一衬底(S13); 提供第二基板(S14); 以及用掩埋绝缘层将第一衬底接合到第二衬底(S15)。 该方法避免了边缘崩溃和后续过程中翘曲度的变化。
    • 7. 发明申请
    • METHOD FOR FORMING SUBSTRATE WITH BURIED INSULATING LAYER
    • 用埋设绝缘层形成衬底的方法
    • US20120122299A1
    • 2012-05-17
    • US13383416
    • 2010-07-10
    • Xiang WangXing WeiMiao ZhangChenglu LinXi Wang
    • Xiang WangXing WeiMiao ZhangChenglu LinXi Wang
    • H01L21/762H01L21/306
    • H01L21/76256
    • A method for forming an edge-chamfered substrate with a buried insulating layer is provided, which comprises the following steps: providing a first substrate (S10); forming an etching mask layer on surfaces of the first substrate, wherein said etching mask layer is formed on the whole surfaces of the first substrate (S11); chamfering a glazed surface of the first substrate and the etching mask layer thereon by the edge grinding (S12); by rotary etching, etching the first substrate which is exposed by the edge grinding on the etching mask layer (S13); providing a second substrate (S14); and bonding the first substrate to the second substrate with a buried insulating layer (S15). The method avoids the edge collapses and the changes of the warp degree in subsequent processes.
    • 提供一种形成具有掩埋绝缘层的边缘倒角衬底的方法,包括以下步骤:提供第一衬底(S10); 在所述第一基板的表面上形成蚀刻掩模层,其中所述蚀刻掩模层形成在所述第一基板的整个表面上; 通过边缘磨削倒角第一基板的玻璃表面和其上的蚀刻掩模层(S12); 通过旋转蚀刻,蚀刻通过边缘研磨而暴露在蚀刻掩模层上的第一衬底(S13); 提供第二基板(S14); 以及用掩埋绝缘层将第一衬底接合到第二衬底(S15)。 该方法避免了边缘崩溃和后续过程中翘曲度的变化。
    • 10. 发明授权
    • System and method of impedance cardiography and heartbeat determination
    • 阻抗心电图和心跳测定的系统和方法
    • US5309917A
    • 1994-05-10
    • US834425
    • 1992-02-12
    • Xiang WangHun H. Sun
    • Xiang WangHun H. Sun
    • A61B5/05A61B5/0295A61B5/04A61B5/053
    • A61B5/04012A61B5/0535A61B5/7239A61B5/7257
    • Cardiac monitoring is disclosed in which thoracic impedance and EKG signals are gathered and processed for improved resolution and accuracy. EKG signals are adaptively processed by digitizing, filtering, differentiating and raising the resultant differential by a power greater than one to emphasize changes in the slope of the EKG signal. Blocks of the thus processed EKG data are analyzed to identify peak amplitude and to compare spacing between peak amplitude adaptively to more accurately identify R wave peaks. Stroke volume is determined from a thoracic impedance signal and its time derivative. Preferably, a time-frequency distribution is taken of the time derivative thoracic impedance signal after low- and high-pass filtering to identify B and X wave events in the signal which are used to determine ventricular ejection time and dz/dt.sub.min for a determination of heart stroke volume by conventional methods. Alternatively, stroke volume is determined by a new relationship between a product of a pair of impedances simultaneously sensed on opposing sides of a patient's heart at the peak of a heartbeat.
    • 公开了心脏监测,其中收集和处理胸阻抗和EKG信号以提高分辨率和精度。 通过以大于1的幂数字化,滤波,微分和提高所得到的差分来强调EKG信号的斜率的变化来自适应地处理EKG信号。 分析如此处理的EKG数据的块以识别峰值振幅,并自适应地比较峰值振幅之间的间隔以更准确地识别R波峰。 行程体积由胸阻抗信号及其时间导数确定。 优选地,在低通滤波和高通滤波之后,采用时间导数胸阻抗信号的时间 - 频率分布,以识别用于确定心室射血时间的信号中的B波和X波事件,以及用于确定心室射血时间的dz / dtmin 心搏量通过常规方法。 或者,通过在心跳的峰值处同时感测在患者心脏的相对侧上的一对阻抗的乘积之间的新关系来确定中风体积。