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1. 发明授权

US09299556B2 Method for preparing semiconductor substrate with insulating buried layer gettering process 有权
标题翻译：半导体衬底制备绝缘埋层吸杂方法
公开(公告)号：US09299556B2
公开(公告)日：2016-03-29
申请号：US13976486
申请日：2010-12-31
申请人： Xing Wei , Zhongdang Wang , Fei Ye , Gongbai Cao , Chenglu Lin , Miao Zhang , Xi Wang
发明人： Xing Wei , Zhongdang Wang , Fei Ye , Gongbai Cao , Chenglu Lin , Miao Zhang , Xi Wang
IPC分类号： H01L21/02 , H01L21/322 , H01L21/762
CPC分类号： H01L21/3226 , H01L21/76254
摘要： A method for preparing a semiconductor substrate with an buried insulating layer by a guttering process, includes the following steps: providing a device substrate and a supporting substrate; forming an insulating layer on a surface of the device substrate; performing a heating treatment on the device substrate, so as to form a denuded zone on the surface of the device substrate; bonding the device substrate having the insulating layer with the supporting substrate, such that the insulating layer is sandwiched between the device substrate and the supporting substrate; annealing and reinforcing a bonding interface, such that an adherence level of the bonding interface meets requirements in the following chamfering grinding, thinning and polishing processes; performing the chamfering grinding, thinning and polishing processes on the device substrate which is bonded.
摘要翻译：通过沟槽工艺制备具有掩埋绝缘层的半导体衬底的方法包括以下步骤：提供器件衬底和支撑衬底; 在所述器件基板的表面上形成绝缘层; 在所述器件基板上进行加热处理，以在所述器件基板的表面上形成剥离区域; 将具有绝缘层的器件基板与支撑基板接合，使得绝缘层夹在器件基板和支撑基板之间; 退火和加强粘合界面，使得接合界面的粘附水平满足以下倒角研磨，减薄和抛光工艺中的要求; 在接合的器件基板上进行倒角研磨，变薄和抛光工艺。

2. 发明申请

US20130273714A1 METHOD FOR PREPARING SEMICONDUCTOR SUBSTRATE WITH INSULATING BURIED LAYER BY GETTERING PROCESS 有权
标题翻译：采用绝缘法制备具有绝缘层的半导体基板的方法
公开(公告)号：US20130273714A1
公开(公告)日：2013-10-17
申请号：US13976486
申请日：2010-12-31
申请人： Xing Wei , Zhongdang Wang , Fei Ye , Gongbai Cao , Chenglu Lin , Miao Zhang , Xi Wang
发明人： Xing Wei , Zhongdang Wang , Fei Ye , Gongbai Cao , Chenglu Lin , Miao Zhang , Xi Wang
IPC分类号： H01L21/02
CPC分类号： H01L21/3226 , H01L21/76254
摘要： A method for preparing a semiconductor substrate with an buried insulating layer by a guttering process, includes the following steps: providing a device substrate and a supporting substrate; forming an insulating layer on a surface of the device substrate; performing a heating treatment on the device substrate, so as to form a denuded zone on the surface of the device substrate; bonding the device substrate having the insulating layer with the supporting substrate, such that the insulating layer is sandwiched between the device substrate and the supporting substrate; annealing and reinforcing a bonding interface, such that an adherence level of the bonding interface meets requirements in the following chamfering grinding, thinning and polishing processes; performing the chamfering grinding, thinning and polishing processes on the device substrate which is bonded.
摘要翻译：通过沟槽工艺制备具有掩埋绝缘层的半导体衬底的方法包括以下步骤：提供器件衬底和支撑衬底; 在所述器件基板的表面上形成绝缘层; 在所述器件基板上进行加热处理，以在所述器件基板的表面上形成剥离区域; 将具有绝缘层的器件基板与支撑基板接合，使得绝缘层夹在器件基板和支撑基板之间; 退火和加强粘合界面，使得接合界面的粘附水平满足以下倒角研磨，减薄和抛光工艺中的要求; 在接合的器件基板上进行倒角研磨，变薄和抛光工艺。

3. 发明授权

US08633090B2 Method for forming substrate with buried insulating layer 有权
标题翻译：用掩埋绝缘层形成衬底的方法
公开(公告)号：US08633090B2
公开(公告)日：2014-01-21
申请号：US13383416
申请日：2010-07-10
申请人： Xiang Wang , Xing Wei , Miao Zhang , Chenglu Lin , Xi Wang
发明人： Xiang Wang , Xing Wei , Miao Zhang , Chenglu Lin , Xi Wang
IPC分类号： H01L21/762
CPC分类号： H01L21/76256
摘要： A method for forming an edge-chamfered substrate with a buried insulating layer is provided, which comprises the following steps: providing a first substrate (S10); forming an etching mask layer on surfaces of the first substrate, wherein said etching mask layer is formed on the whole surfaces of the first substrate (S11); chamfering a glazed surface of the first substrate and the etching mask layer thereon by the edge grinding (S12); by rotary etching, etching the first substrate which is exposed by the edge grinding on the etching mask layer (S13); providing a second substrate (S14); and bonding the first substrate to the second substrate with a buried insulating layer (S15). The method avoids the edge collapses and the changes of the warp degree in subsequent processes.
摘要翻译：提供一种形成具有掩埋绝缘层的边缘倒角衬底的方法，包括以下步骤：提供第一衬底（S10）; 在所述第一基板的表面上形成蚀刻掩模层，其中所述蚀刻掩模层形成在所述第一基板的整个表面上; 通过边缘磨削倒角第一基板的玻璃表面和其上的蚀刻掩模层（S12）; 通过旋转蚀刻，蚀刻通过边缘研磨而暴露在蚀刻掩模层上的第一衬底（S13）; 提供第二基板（S14）; 以及用掩埋绝缘层将第一衬底接合到第二衬底（S15）。该方法避免了边缘崩溃和后续过程中翘曲度的变化。

4. 发明申请

US20120122299A1 METHOD FOR FORMING SUBSTRATE WITH BURIED INSULATING LAYER 有权
标题翻译：用埋设绝缘层形成衬底的方法
公开(公告)号：US20120122299A1
公开(公告)日：2012-05-17
申请号：US13383416
申请日：2010-07-10
申请人： Xiang Wang , Xing Wei , Miao Zhang , Chenglu Lin , Xi Wang
发明人： Xiang Wang , Xing Wei , Miao Zhang , Chenglu Lin , Xi Wang
IPC分类号： H01L21/762 , H01L21/306
CPC分类号： H01L21/76256
摘要： A method for forming an edge-chamfered substrate with a buried insulating layer is provided, which comprises the following steps: providing a first substrate (S10); forming an etching mask layer on surfaces of the first substrate, wherein said etching mask layer is formed on the whole surfaces of the first substrate (S11); chamfering a glazed surface of the first substrate and the etching mask layer thereon by the edge grinding (S12); by rotary etching, etching the first substrate which is exposed by the edge grinding on the etching mask layer (S13); providing a second substrate (S14); and bonding the first substrate to the second substrate with a buried insulating layer (S15). The method avoids the edge collapses and the changes of the warp degree in subsequent processes.
摘要翻译：提供一种形成具有掩埋绝缘层的边缘倒角衬底的方法，包括以下步骤：提供第一衬底（S10）; 在所述第一基板的表面上形成蚀刻掩模层，其中所述蚀刻掩模层形成在所述第一基板的整个表面上; 通过边缘磨削倒角第一基板的玻璃表面和其上的蚀刻掩模层（S12）; 通过旋转蚀刻，蚀刻通过边缘研磨而暴露在蚀刻掩模层上的第一衬底（S13）; 提供第二基板（S14）; 以及用掩埋绝缘层将第一衬底接合到第二衬底（S15）。该方法避免了边缘崩溃和后续过程中翘曲度的变化。

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