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1. 发明授权

US07749902B2 Methods of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07749902B2
公开(公告)日：2010-07-06
申请号：US11825272
申请日：2007-06-05
申请人： Hyun-chul Kim , Sung-il Cho , Jae-seung Hwang , Jun Sen , Yong-hyun Kwon
发明人： Hyun-chul Kim , Sung-il Cho , Jae-seung Hwang , Jun Sen , Yong-hyun Kwon
IPC分类号： H01L21/44 , H01L21/302 , H01L21/461 , C03C15/00 , C03C25/68 , C23F1/00
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338 , Y10S438/942 , Y10S438/946 , Y10S438/947
摘要： Provided is a method of manufacturing a semiconductor device using double patterning. The method includes: forming a first material layer pattern having recesses in a first direction on an object layer and a second material layer pattern formed on the first material layer pattern; selectively etching the second material layer pattern and the first material layer pattern in a direction perpendicular to the first direction to form an etching mask; and etching the object layer to form minute patterns.
摘要翻译：提供了使用双重图案化制造半导体器件的方法。该方法包括：在物体层上形成具有沿第一方向的凹陷的第一材料层图案和形成在第一材料层图案上的第二材料层图案; 在与第一方向垂直的方向上选择性蚀刻第二材料层图案和第一材料层图案以形成蚀刻掩模; 并蚀刻目标层以形成微小的图案。

2. 发明申请

US20080194108A1 Methods of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080194108A1
公开(公告)日：2008-08-14
申请号：US11825272
申请日：2007-06-05
申请人： Hyun-chul Kim , Sung-il Cho , Jae-seung Hwang , Jun Sen , Yong-hyun Kwon
发明人： Hyun-chul Kim , Sung-il Cho , Jae-seung Hwang , Jun Sen , Yong-hyun Kwon
IPC分类号： H01L21/311
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/0338 , Y10S438/942 , Y10S438/946 , Y10S438/947
摘要： Provided is a method of manufacturing a semiconductor device using double patterning. The method includes: forming a first material layer pattern having recesses in a first direction on an object layer and a second material layer pattern formed on the first material layer pattern; selectively etching the second material layer pattern and the first material layer pattern in a direction perpendicular to the first direction to form an etching mask; and etching the object layer to form minute patterns.
摘要翻译：提供了使用双重图案化制造半导体器件的方法。该方法包括：在物体层上形成具有沿第一方向的凹陷的第一材料层图案和形成在第一材料层图案上的第二材料层图案; 在与第一方向垂直的方向上选择性蚀刻第二材料层图案和第一材料层图案以形成蚀刻掩模; 并蚀刻目标层以形成微小的图案。

3. 发明申请

US20050025548A1 Print option setting method and system for image forming devices 失效
标题翻译：用于图像形成装置的打印选项设置方法和系统
公开(公告)号：US20050025548A1
公开(公告)日：2005-02-03
申请号：US10893254
申请日：2004-07-19
申请人： Hyun-chul Kim
发明人： Hyun-chul Kim
IPC分类号： G06F3/12 , G06K15/00 , G06K3/00 , B41J5/30
CPC分类号： G06K15/00 , G06K15/021 , G06K15/1822
摘要： A method and system for setting print options for media to be printed in image-forming devices according to a specific form format is provided. The print option setting method and system comprises the steps of detecting line feed information from a print file in the image-forming device, and extracting at least one or more lines included in the print file based on the line feed information; setting the number of characters to be printed per unit length for each of the extracted lines and the number of lines; and sending the information on the characters set line by line and the number of lines to the image-forming device.
摘要翻译：提供了一种用于根据特定形式格式设置要在图像形成装置中打印的介质的打印选项的方法和系统。打印选项设置方法和系统包括以下步骤：从图像形成装置中的打印文件检测换行信息，并且基于换行信息提取包含在打印文件中的至少一行或多行; 为每个提取的行和行数设置每单位长度要打印的字符数; 并将字符集上的信息逐行地发送到图像形成装置。

4. 发明申请

US20050144559A1 Method and system to selectively print a file 审中-公开
标题翻译：选择打印文件的方法和系统
公开(公告)号：US20050144559A1
公开(公告)日：2005-06-30
申请号：US11020126
申请日：2004-12-27
申请人： Hyun-chul Kim
发明人： Hyun-chul Kim
IPC分类号： G06F3/12 , G06F17/21
CPC分类号： G06F3/125 , G06F3/1205 , G06F3/1284
摘要： A printing system to selectively print a file includes a storage to store an input file, page information extracted from the input file, and a file edited by pages, an operating panel equipment to display the page information by pages to allow the input file stored in the storage to be selectively edited and editing the input file by pages, a control unit to store the input file, the page information and the edited file in the storage and performing control commands inputted through the operating panel equipment, and a printer to convert the edited file into printable data and printing the printable data.
摘要翻译：用于选择性地打印文件的打印系统包括存储输入文件，从输入文件提取的页面信息和由页面编辑的文件的操作面板设备，用于通过页面显示页面信息，以允许输入文件存储在要选择性地编辑的存储器，通过页面编辑输入文件，将输入文件存储的控制单元，页面信息和编辑的文件存储在存储器中，并执行通过操作面板设备输入的控制命令，以及打印机，编辑的文件转换为可打印数据并打印可打印数据。

5. 发明授权

US06518624B2 Trench-gate power semiconductor device preventing latch-up and method for fabricating the same 失效
公开(公告)号：US06518624B2
公开(公告)日：2003-02-11
申请号：US09734016
申请日：2000-12-12
申请人： Hyun-chul Kim , Chong-man Yun , Kyu-hyun Lee , Ju-il Kim
发明人： Hyun-chul Kim , Chong-man Yun , Kyu-hyun Lee , Ju-il Kim
IPC分类号： H01L2976
CPC分类号： H01L29/0696 , H01L29/1095 , H01L29/66348 , H01L29/7397
摘要： A trench-gate power semiconductor device and a method for fabricating the same are provided. The trench-gate power semiconductor device includes a semiconductor substrate of a first conductivity type used as a collector region, a buffer layer of a second conductivity type formed on the semiconductor substrate, a drift region of a second conductivity type formed on the buffer layer, a base region of a first conductivity type formed on the drift region, a gate dielectric layer formed on the surface of a trench which is formed down to a predetermined depth into the drift region and surrounds the base region, a gate electrode formed on the gate dielectric layer, an emitter region of a second conductivity type contacting both the surface of the base region and an upper sidewall of the trench in the base region, the emitter region contains a first emitter region formed so as to be extended to a predetermined length along the sidewall of the trench and to be alternately arranged in the base region and a second emitter region extended to a predetermined length from the first emitter to the center of the base region, an emitter electrode formed so as to be electrically connected to the first emitter region through a part of the second emitter region, and a collector electrode formed so as to be electrically connected to the semiconductor substrate.

6. 发明授权

US09530729B2 Semiconductor devices including insulating extension patterns between adjacent landing pads and methods of fabricating the same 有权
公开(公告)号：US09530729B2
公开(公告)日：2016-12-27
申请号：US14859435
申请日：2015-09-21
申请人： Yong-gyu Choi , Hyun-chul Kim , Seung-hee Ko
发明人： Yong-gyu Choi , Hyun-chul Kim , Seung-hee Ko
IPC分类号： H01L23/522 , H01L23/528 , H01L27/108 , H01L27/02 , H01L21/768
CPC分类号： H01L23/5228 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L27/0207 , H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/10876 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.

7. 发明授权

US09165934B2 Semiconductor devices including insulating extension patterns between adjacent landing pads and methods of fabricating the same 有权
标题翻译：包括相邻着陆焊盘之间的绝缘延伸图案的半导体器件及其制造方法
公开(公告)号：US09165934B2
公开(公告)日：2015-10-20
申请号：US14445829
申请日：2014-07-29
申请人： Yong-gyu Choi , Hyun-chul Kim , Seung-hee Ko
发明人： Yong-gyu Choi , Hyun-chul Kim , Seung-hee Ko
IPC分类号： H01L27/108
CPC分类号： H01L23/5228 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L27/0207 , H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/10876 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.
摘要翻译：半导体存储器件包括分别包括位线的多个图形结构和从衬底突出的侧壁上的绝缘间隔物。多个绝缘延伸图案设置在图案结构的相对的侧壁上，并且分别从相对的侧壁的上部沿着绝缘间隔件延伸到衬底，使得相对的侧壁的下部分没有扩展图案。在相邻图案结构的相对侧壁的下部之间的衬底上设置多个埋入接触图案。还讨论了相关的制造方法。

8. 发明授权

US08883622B2 Method of fabricating and semiconductor memory device using the same 有权
标题翻译：制造方法及使用其的半导体存储器件
公开(公告)号：US08883622B2
公开(公告)日：2014-11-11
申请号：US13414262
申请日：2012-03-07
申请人： Won-mo Park , Min-wk Hwang , Hyun-chul Kim
发明人： Won-mo Park , Min-wk Hwang , Hyun-chul Kim
IPC分类号： H01L21/283 , H01L27/108 , G11C5/04 , H01L21/768 , G11C5/06
CPC分类号： H01L21/76885 , G11C5/04 , G11C5/06 , H01L27/10894 , H01L27/10897
摘要： A method of fabricating a semiconductor memory device includes preparing a semiconductor substrate which is divided into a cell array region and a core and peripheral region adjacent to the cell array region. Signal lines may be formed in a lower layer in a cell region. An insulation layer may be formed on the lower layer. Signal lines connected to cell region signal lines may be formed on an insulation layer of the peripheral region. A capping layer may be formed on the insulation layer and the core and peripheral signal lines. The capping layer may be etched to expose the lower layer of the cell array region and an etch stop may be formed on the lower layer and the core and peripheral region.
摘要翻译：一种制造半导体存储器件的方法包括制备半导体衬底，该半导体衬底被划分为单元阵列区域和与该单元阵列区域相邻的核心和外围区域。信号线可以形成在单元区域的下层中。可以在下层上形成绝缘层。连接到单元区域信号线的信号线可以形成在周边区域的绝缘层上。可以在绝缘层和芯和外围信号线上形成覆盖层。可以蚀刻覆盖层以暴露电池阵列区域的下层，并且可以在下层和芯部和外围区域上形成蚀刻停止。

9. 发明申请

US20070002338A1 Method and apparatus for managing print data 审中-公开
标题翻译：用于管理打印数据的方法和装置
公开(公告)号：US20070002338A1
公开(公告)日：2007-01-04
申请号：US11473012
申请日：2006-06-23
申请人： Hyun-chul Kim
发明人： Hyun-chul Kim
IPC分类号： G06F3/12
CPC分类号： G06F21/608
摘要： A method for managing print data and an apparatus for performing the same are provided. The method for managing print data includes the steps of checking whether printable condition data corresponding to print data is provided, and, if printable condition data is not provided, generating printable condition data by obtaining printable condition data corresponding to a keyword input by a user.
摘要翻译：提供了一种用于管理打印数据的方法和用于执行打印数据的装置。用于管理打印数据的方法包括以下步骤：检查是否提供与打印数据相对应的可打印条件数据，以及如果不提供可打印条件数据，则通过获得与用户输入的关键字对应的可打印条件数据来生成可打印条件数据。

10. 发明申请

US20160013131A1 SEMICONDUCTOR DEVICES INCLUDING INSULATING EXTENSION PATTERNS BETWEEN ADJACENT LANDING PADS AND METHODS OF FABRICATING THE SAME 审中-公开
公开(公告)号：US20160013131A1
公开(公告)日：2016-01-14
申请号：US14859435
申请日：2015-09-21
申请人： Yong-gyu Choi , Hyun-chul Kim , Seung-hee Ko
发明人： Yong-gyu Choi , Hyun-chul Kim , Seung-hee Ko
IPC分类号： H01L23/522 , H01L23/528 , H01L27/02
CPC分类号： H01L23/5228 , H01L21/76897 , H01L23/5226 , H01L23/528 , H01L27/0207 , H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/10876 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory device includes a plurality of pattern structures respectively including a bit line and insulating spacers on sidewalls thereof protruding from a substrate. A plurality of insulating extension patterns are provided on opposing sidewalls of the pattern structures, and respectively extend from upper portions of the opposing sidewalls toward the substrate along the insulating spacers such that lower portions of the opposing sidewalls are free of the extension patterns. A plurality of buried contact patterns are provided on the substrate between the lower portions of the opposing sidewalls of adjacent pattern structures. Related fabrication methods are also discussed.

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