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1. 发明授权

US08031022B2 Oscillation circuit including MIT device and method of adjusting oscillation frequency of the oscillation circuit 失效
标题翻译：包括MIT装置的振荡电路和调整振荡电路的振荡频率的方法
公开(公告)号：US08031022B2
公开(公告)日：2011-10-04
申请号：US12531058
申请日：2008-03-05
申请人： Yong-Wook Lee , Bong-Jun Kim , Hyun-Tak Kim , Sung-Youl Choi , Byung-Gyu Chae , Jung-Wook Lim , Sun-Jin Yun
发明人： Yong-Wook Lee , Bong-Jun Kim , Hyun-Tak Kim , Sung-Youl Choi , Byung-Gyu Chae , Jung-Wook Lim , Sun-Jin Yun
IPC分类号： H03B11/00
CPC分类号： H01L49/003 , H03B9/12
摘要： Provided are an MIT device-based oscillation circuit including a power source, an MIT device and a variable resistor, in which a generation of an oscillation and an oscillation frequency are determined according to a voltage applied from the power source and a resistance of the variable resistor, and a method of adjusting the oscillation frequency of the oscillation circuit. The MIT device includes an MIT thin film and an electrode thin film connected to the MIT thin film, and generates a discontinuous MIT at an MIT generation voltage, the variable resistor is connected in series to the MIT device, and the power source applies a voltage or an electric current to the MIT device. The generation of an oscillation and an oscillation frequency are determined according to the voltage applied from the power source and the resistance of the variable resistor.
摘要翻译：提供了一种基于MIT设备的振荡电路，其包括电源，MIT设备和可变电阻器，其中根据从电源施加的电压和变量的电阻确定振荡和振荡频率的产生电阻器和调整振荡电路的振荡频率的方法。 MIT装置包括连接到MIT薄膜的MIT薄膜和电极薄膜，并以MIT产生电压产生不连续的MIT，可变电阻器与MIT装置串联连接，并且电源施加电压或电流到MIT设备。根据从电源施加的电压和可变电阻器的电阻来确定振荡和振荡频率的产生。

2. 发明申请

US20090286140A1 LITHIUM SECONDARY BATTERY INCLUDING DISCHARGE UNIT 有权
标题翻译：锂离子二次电池，包括放电单元
公开(公告)号：US20090286140A1
公开(公告)日：2009-11-19
申请号：US11813898
申请日：2006-01-12
申请人： Hyun-Tak Kim , Doo-Hyeb Youn , Byung-Gyu Chae , Kwang-Yong Kang , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Jung-Wook Lim , Gyung-Ock Kim , Sung-Lyul Maeng
发明人： Hyun-Tak Kim , Doo-Hyeb Youn , Byung-Gyu Chae , Kwang-Yong Kang , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Jung-Wook Lim , Gyung-Ock Kim , Sung-Lyul Maeng
IPC分类号： H01M10/50
CPC分类号： H01M2/34 , H01M2/348 , H01M10/052 , H01M10/443 , H01M2200/00 , H01M2200/106
摘要： Provided is a lithium secondary battery including a discharge unit capable of delaying or preventing a battery explosion. The lithium secondary battery includes a discharge unit disposed parallel to a battery body. The discharge unit includes a first electrode connected to a positive electrode of the battery body, a second electrode connected to a negative electrode of the battery body, and a discharge material film, disposed between the first electrode and the second electrode, inducing a abrupt discharge above a predetermined temperature. The discharge material film, e.g., a abrupt metal-insulator transition (MIT) material film can induce a abrupt discharge, thereby preventing or delaying a battery explosion.
摘要翻译：提供一种锂二次电池，其包括能够延迟或防止电池爆炸的放电单元。锂二次电池包括与电池体平行设置的放电单元。放电单元包括连接到电池体的正极的第一电极，连接到电池体的负极的第二电极和设置在第一电极和第二电极之间的放电材料膜，引起突然的放电高于预定的温度。放电材料膜，例如突然的金属 - 绝缘体转变（MIT）材料膜可以引起突然的放电，从而防止或延迟电池爆炸。

3. 发明申请

US20090114896A1 MEMORY DEVICE USING ABRUPT METAL-INSULATOR TRANSITION AND METHOD OF OPERATING THE SAME 有权
标题翻译：使用破坏金属绝缘体过渡的存储器件及其操作方法
公开(公告)号：US20090114896A1
公开(公告)日：2009-05-07
申请号：US11994224
申请日：2006-06-29
申请人： Hyun-Tak Kim , Bong-Jun Kim , Kwang-Yong Kang , Sun-Jin Yun , Yong-Wook Lee , Byung-Gyu Chae
发明人： Hyun-Tak Kim , Bong-Jun Kim , Kwang-Yong Kang , Sun-Jin Yun , Yong-Wook Lee , Byung-Gyu Chae
IPC分类号： H01L47/00 , H01L51/00 , H01L21/00 , H01L51/40
CPC分类号： H01L27/10 , B82Y10/00 , G11C13/0007 , G11C13/0014 , G11C2213/32 , G11C2213/51 , H01L29/8615 , H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/146 , H01L45/148
摘要： Provided are a memory device that undergoes no structural phase change, maintains a uniform thin film, and can perform a high-speed switching operation, and a method of operating the same. The memory device includes a substrate, an abrupt MIT material layer, and a plurality of electrodes. The abrupt MIT material layer is disposed on the substrate and undergoes an abrupt metal-insulator transition by an energy change between electrons. The plurality of electrodes are brought into contact with the abrupt MIT material layer and are melted by heat to form a conductive path on the abrupt MIT material layer.
摘要翻译：提供了不经历结构相变，保持均匀的薄膜并且可以执行高速切换操作的存储器件及其操作方法。存储器件包括衬底，突变MIT材料层和多个电极。突变的MIT材料层设置在衬底上，并经过电子之间的能量变化而突然的金属 - 绝缘体转变。多个电极与突然的MIT材料层接触并通过热熔化以在突变的MIT材料层上形成导电路径。

4. 发明申请

US20090057820A1 ABRUPT METAL-INSULATOR TRANSITION DEVICE WITH PARALLEL CONDUCTING LAYERS 有权
标题翻译：具有平行导电层的金属绝缘体过渡装置
公开(公告)号：US20090057820A1
公开(公告)日：2009-03-05
申请号：US12162964
申请日：2007-01-31
申请人： Hyun-Tak Kim , Byung-Gyu Chae , Kwang-Yong Kang , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun
发明人： Hyun-Tak Kim , Byung-Gyu Chae , Kwang-Yong Kang , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun
IPC分类号： H01L23/525
CPC分类号： H01L49/003
摘要： An abrupt MIT (metal-insulator transition) device with parallel conducting layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one conducting layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the conducting layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the conducting layer, which is typically caused by current flowing through the conducting layer, is less likely to occur.
摘要翻译：提供了具有平行导电层的突发MIT（金属 - 绝缘体转变）器件。突变MIT装置包括设置在基板的特定区域上的第一电极，设置成与第一电极隔开预定距离的第二电极，以及将第一电极与第二电极电连接的至少一个导电层并且具有允许导电层的整个区域由于MIT而转变成金属层的宽度。由于这种构造，通常由电流流过导电层引起的导电层的劣化不太可能发生。

5. 发明授权

US08536554B2 Three-terminal metal-insulator transition switch, switching system including the same, and method of controlling metal-insulator transition of the same 有权
标题翻译：三端子金属绝缘体转换开关，包括相同的开关系统及其控制金属 - 绝缘体转换的方法
公开(公告)号：US08536554B2
公开(公告)日：2013-09-17
申请号：US12599248
申请日：2008-05-07
申请人： Hyun-Tak Kim , Yong-Wook Lee , Bong-Jun Kim , Sung-Youl Choi , Sun-Jin Yun
发明人： Hyun-Tak Kim , Yong-Wook Lee , Bong-Jun Kim , Sung-Youl Choi , Sun-Jin Yun
IPC分类号： H01L21/02
CPC分类号： H01L49/003
摘要： Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventional gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode and an outlet electrode, which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode, which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.
摘要翻译：提供了一种三端MIT开关，其可以容易地控制不连续的MIT跳转，并且不需要传统的栅极绝缘层，包括3端子MIT开关的开关系统以及控制三端MIT的MIT的方法开关。 3端MIT开关包括2端MIT装置，其分别连接到2端MIT装置的每个端子，产生过渡电压的不连续MIT，入口电极和出口电极以及控制电极，其连接到入口电极并且包括与入口电极的外部端子分离的外部端子，其中根据施加到控制电极的电压或电流来控制2端子MIT装置的MIT。开关系统包括三端MIT开关，连接到入口电极的电压源和连接到控制电极的控制源。

6. 发明申请

US20100182034A1 CIRCUIT FOR CONTINUOUSLY MEASURING DISCONTINUOUS METAL INSULATOR TRANSITION OF MIT ELEMENT AND MIT SENSOR USING THE SAME 有权
标题翻译：用于连续测量不连续金属绝缘子过渡的电路元件和麻省传感器的电路
公开(公告)号：US20100182034A1
公开(公告)日：2010-07-22
申请号：US12376668
申请日：2007-07-05
申请人： Hyun-Tak Kim , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Sang-Kuk Choi
发明人： Hyun-Tak Kim , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Sang-Kuk Choi
IPC分类号： G01R31/26
CPC分类号： G01R31/2641
摘要： Provided are a circuit for continuously measuring a discontinuous metal-insulator transition (MIT) of an MIT element and an MIT sensor using the circuit. The circuit comprises a to-be-measured object unit including the MIT element having a discontinuous MIT occurring at the transition voltage thereof, a power supply unit applying a predetermined pulse current or voltage signal to the to-be-measured object unit, a measurement unit measuring the discontinuous MIT of the MIT element, and a microprocessor controlling the power supply unit and the measurement unit. The discontinuous MIT measurement circuit continuously measures the discontinuous MIT of the MIT element, and thus it can be used as a sensor for sensing a variation in an external factor.
摘要翻译：提供了一种用于连续测量使用该电路的MIT元件和MIT传感器的不连续金属 - 绝缘体转变（MIT）的电路。该电路包括被测量对象单元，其包括具有在其转变电压下出现的不连续MIT的MIT元件，向待测量对象单元施加预定脉冲电流或电压信号的电源单元，测量MIT元件的不连续MIT的单元，以及控制电源单元和测量单元的微处理器。不连续的MIT测量电路连续测量MIT元件的不连续MIT，因此它可以用作感测外部因素变化的传感器。

7. 发明申请

US20080297358A1 Temperature Sensor Using Abrupt Metal-Insulator Transition (Mit) and Alarm Comprising the Temperature Sensor 有权
标题翻译：温度传感器使用突发金属绝缘体转换（Mit）和包含温度传感器的报警器
公开(公告)号：US20080297358A1
公开(公告)日：2008-12-04
申请号：US12090084
申请日：2006-06-27
申请人： Hyun-Tak Kim , Kwang Yong Kang , Yong Wook Lee , Byung Gyu Chae , Bong Jun Kim , Sang Kuk Choi , Sun Jin Yun
发明人： Hyun-Tak Kim , Kwang Yong Kang , Yong Wook Lee , Byung Gyu Chae , Bong Jun Kim , Sang Kuk Choi , Sun Jin Yun
IPC分类号： G08B17/06 , G01K7/16
CPC分类号： G01K3/005 , G01K7/22
摘要： Provided are a temperature sensor using a metal-insulator transition (MIT) device subject to abrupt MIT at a specific temperature and an alarm including the temperature sensor. The abrupt MIT device includes an abrupt MIT thin film and at least two electrode thin films that contacts the abrupt MIT thin film. The abrupt MIT device generates abrupt metal-insulator transition at a specific transition temperature. The alarm includes a temperature sensor comprising an abrupt MIT device, and an alarm signaling device serially connected to the temperature sensor. Accordingly, the alarm can be manufactured to have a simple circuit and be of a small size by including the temperature sensor using an abrupt MIT device.
摘要翻译：提供了使用在特定温度下经受突然MIT的金属 - 绝缘体转变（MIT）装置的温度传感器和包括温度传感器的警报。突变的MIT装置包括突变的MIT薄膜和至少两个接触突变的MIT薄膜的电极薄膜。突变MIT器件在特定转变温度下产生突然的金属 - 绝缘体转变。报警装置包括一个温度传感器，它包括一个突然的MIT装置，和一个串联连接到温度传感器的报警信号装置。因此，通过使用突然的MIT装置包括温度传感器，可以将报警器制造成具有简单的电路并且尺寸小。

8. 发明申请

US20100085126A1 OSCILLATION CIRCUIT INCLUDING MIT DEVICE AND METHOD OF ADJUSTING OSCILLATION FREQUENCY OF THE OSCILLATION CIRCUIT 失效
标题翻译：振荡电路包括麻省电器和调节振荡电路的振荡频率的方法
公开(公告)号：US20100085126A1
公开(公告)日：2010-04-08
申请号：US12531058
申请日：2008-03-05
申请人： Yong-Wook Lee , Bong-Jun Kim , Hyun-Tak Kim , Sung-Youl Choi , Byung-Gyu Chae , Jung-Wook Lim , Sun-Jin Yun
发明人： Yong-Wook Lee , Bong-Jun Kim , Hyun-Tak Kim , Sung-Youl Choi , Byung-Gyu Chae , Jung-Wook Lim , Sun-Jin Yun
IPC分类号： H03B1/00
CPC分类号： H01L49/003 , H03B9/12
摘要： Provided are an MIT device-based oscillation circuit including a power source, an MIT device and a variable resistor, in which a generation of an oscillation and an oscillation frequency are determined according to a voltage applied from the power source and a resistance of the variable resistor, and a method of adjusting the oscillation frequency of the oscillation circuit. The MIT device includes an MIT thin film and an electrode thin film connected to the MIT thin film, and generates a discontinuous MIT at an MIT generation voltage, the variable resistor is connected in series to the MIT device, and the power source applies a voltage or an electric current to the MIT device. The generation of an oscillation and an oscillation frequency are determined according to the voltage applied from the power source and the resistance of the variable resistor.
摘要翻译：提供了一种基于MIT设备的振荡电路，其包括电源，MIT设备和可变电阻器，其中根据从电源施加的电压和变量的电阻确定振荡和振荡频率的产生电阻器和调整振荡电路的振荡频率的方法。 MIT装置包括连接到MIT薄膜的MIT薄膜和电极薄膜，并以MIT产生电压产生不连续的MIT，可变电阻器与MIT装置串联连接，并且电源施加电压或电流到MIT设备。根据从电源施加的电压和可变电阻器的电阻来确定振荡和振荡频率的产生。

9. 发明申请

US20080197916A1 Low-Voltage Noise Preventing Circuit Using Abrupt Metal-Insulator Transition Device 失效
标题翻译：使用突发金属绝缘体转换器件的低压噪声防护电路
公开(公告)号：US20080197916A1
公开(公告)日：2008-08-21
申请号：US11908837
申请日：2006-03-07
申请人： Hyun-Tak Kim , Kwang-Yong Kang , Byung-Gyu Chae , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Gyung-Ock Kim
发明人： Hyun-Tak Kim , Kwang-Yong Kang , Byung-Gyu Chae , Bong-Jun Kim , Yong-Wook Lee , Sun-Jin Yun , Gyung-Ock Kim
IPC分类号： H03K5/00 , H01L27/00
CPC分类号： H01L49/003
摘要： Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.
摘要翻译：提供一种使用突变金属 - 绝缘体转变（MIT）器件的低电压噪声防止电路，其能够以低于额定信号电压的电压有效地去除噪声信号。突发MIT设备串联连接到电气和/或电子系统以防止噪声信号，并且以预定电压经受突然MIT。因此，可以有效地消除低电压噪声。

10. 发明授权

US08563903B2 Method and circuit for controlling radiant heat of transistor using metal-insulator transition device 有权
标题翻译：使用金属 - 绝缘体转换装置控制晶体管辐射热的方法和电路
公开(公告)号：US08563903B2
公开(公告)日：2013-10-22
申请号：US12742430
申请日：2008-11-11
申请人： Hyun-Tak Kim , Yong-Wook Lee , Bong-Jun Kim , Sun-Jin Yun
发明人： Hyun-Tak Kim , Yong-Wook Lee , Bong-Jun Kim , Sun-Jin Yun
IPC分类号： H05B1/02
CPC分类号： H01L25/16 , H01L23/62 , H01L2924/0002 , H02H3/085 , H02H5/047 , H01L2924/00
摘要： Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor.
摘要翻译：提供了一种用于控制功率晶体管的发热的方法和电路，其中功率晶体管可以通过使用能够用作保险丝的金属 - 绝缘体转变（MIT）装置来阻止功率晶体管的发热来保护，并且可以半永久使用。用于控制晶体管发热的电路包括金属 - 绝缘体转变（MIT）器件，其中在预定的临界温度下出现突发的MIT; 以及连接到驱动装置并控制对驱动装置的电源的功率晶体管，其中所述MIT装置附接到所述晶体管的表面或加热部分，并且连接到所述晶体管的基极或栅极端子或周围电路，并且其中当晶体管的温度升高到等于或大于预定临界温度的温度时，MIT器件降低或切断晶体管的电流，以防止晶体管的发热晶体管。

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