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1. 发明申请

US20060197595A1 Predistorter for power amplifier 有权
标题翻译：功率放大器预失真器
公开(公告)号：US20060197595A1
公开(公告)日：2006-09-07
申请号：US11185107
申请日：2005-07-20
申请人： Hyun-II Kang , Young-Hwan Kim , Jae-Sup Lee , Sang-Hyun Woo
发明人： Hyun-II Kang , Young-Hwan Kim , Jae-Sup Lee , Sang-Hyun Woo
IPC分类号： H03F1/26
CPC分类号： H03F1/3276
摘要： A predistorter that linearizes the nonlinearity of a power amplifier in a system supporting a multimode and a multiband (frequency band). The predistorter includes a field-effect transistor, an impedance transform unit, a first inductor, a first capacitor, and a second capacitor. The field-effect transistor has a source connected to the ground and uses a variable gate bias voltage. The impedance transform unit is connected to a drain of the field-effect transistor to perform impedance transform. The first inductor is connected between the impedance transform unit and a voltage provided to the field-effect transistor. The first capacitor is connected between a power input terminal and the impedance transform unit. The second capacitor is connected between a power output terminal and the impedance transform unit.
摘要翻译：一种预失真器，其将支持多模和多频带（频带）的系统中的功率放大器的非线性线性化。预失真器包括场效应晶体管，阻抗变换单元，第一电感器，第一电容器和第二电容器。场效应晶体管具有连接到地并且使用可变栅极偏置电压的源极。阻抗变换单元连接到场效应晶体管的漏极，以进行阻抗变换。第一电感器连接在阻抗变换单元和提供给场效应晶体管的电压之间。第一电容器连接在电源输入端子和阻抗变换单元之间。第二电容器连接在电力输出端子和阻抗变换单元之间。

2. 发明授权

US07408408B2 Predistorter for power amplifier 有权
标题翻译：功率放大器预失真器
公开(公告)号：US07408408B2
公开(公告)日：2008-08-05
申请号：US11185107
申请日：2005-07-20
申请人： Hyun-Il Kang , Young-Hwan Kim , Jae-Sup Lee , Sang-Hyun Woo
发明人： Hyun-Il Kang , Young-Hwan Kim , Jae-Sup Lee , Sang-Hyun Woo
IPC分类号： H03F1/26
CPC分类号： H03F1/3276
摘要： A predistorter that linearizes the nonlinearity of a power amplifier in a system supporting a multimode and a multiband (frequency band). The predistorter includes a field-effect transistor, an impedance transform unit, a first inductor, a first capacitor, and a second capacitor. The field-effect transistor has a source connected to the ground and uses a variable gate bias voltage. The impedance transform unit is connected to a drain of the field-effect transistor to perform impedance transform. The first inductor is connected between the impedance transform unit and a voltage provided to the field-effect transistor. The first capacitor is connected between a power input terminal and the impedance transform unit. The second capacitor is connected between a power output terminal and the impedance transform unit.
摘要翻译：一种预失真器，其将支持多模和多频带（频带）的系统中的功率放大器的非线性线性化。预失真器包括场效应晶体管，阻抗变换单元，第一电感器，第一电容器和第二电容器。场效应晶体管具有连接到地并且使用可变栅极偏置电压的源极。阻抗变换单元连接到场效应晶体管的漏极，以进行阻抗变换。第一电感器连接在阻抗变换单元和提供给场效应晶体管的电压之间。第一电容器连接在电源输入端子和阻抗变换单元之间。第二电容器连接在电力输出端子和阻抗变换单元之间。

3. 发明授权

US08734686B2 Metal pattern composition and method of forming metal pattern using the same 有权
标题翻译：金属图案组成和使用其形成金属图案的方法
公开(公告)号：US08734686B2
公开(公告)日：2014-05-27
申请号：US12879596
申请日：2010-09-10
申请人： Young-Hun Byun , Jae-Ho Lee , Young-Hwan Kim
发明人： Young-Hun Byun , Jae-Ho Lee , Young-Hwan Kim
IPC分类号： H01B1/02 , B05D5/12
CPC分类号： H01B1/22 , C23C18/08 , H01B1/026 , H05K3/105 , H05K2201/0257 , H05K2203/1105 , H05K2203/121
摘要： Disclosed is a metal pattern composition including a conductive metal or a conductive metal precursor compound, and a carboxylic acid-amine base ion pair salt.
摘要翻译：公开了包含导电金属或导电金属前体化合物和羧酸 - 胺碱离子对盐的金属图案组合物。

4. 发明授权

US08577308B2 Beamformer and beamforming method 有权
标题翻译：波束形成和波束成形方法
公开(公告)号：US08577308B2
公开(公告)日：2013-11-05
申请号：US12268627
申请日：2008-11-11
申请人： Sung-Tae Choi , Jung-Han Choi , Young-Hwan Kim , Dong-Hyun Lee , Hong-Yi Kim , Ki-Chan Eun , Chul-Soon Park
发明人： Sung-Tae Choi , Jung-Han Choi , Young-Hwan Kim , Dong-Hyun Lee , Hong-Yi Kim , Ki-Chan Eun , Chul-Soon Park
IPC分类号： H04B7/06
CPC分类号： H04B7/0617 , H04B7/0682
摘要： Disclosed are a beamformer and a beamforming method. The beamformer includes a plurality of dividers, each of which divides an input signal along a plurality of paths, an input switch which selects one of the dividers such that the input signal is input to the selected divider, a phase shifter which shifts phases of respective output signals from the divider, and an output switch which transmits the output signals from the phase shifter to an antenna.
摘要翻译：公开了波束成形器和波束成形方法。波束形成器包括多个分频器，每个分频器沿着多个路径分割输入信号;输入开关，其选择一个分频器，使得输入信号被输入到所选择的分频器;移相器，其相移来自分频器的输出信号，以及将相移器的输出信号发送到天线的输出开关。

5. 外观设计

USD670773S1 Deformable toy 有权
标题翻译：变形玩具
公开(公告)号：USD670773S1
公开(公告)日：2012-11-13
申请号：US29388757
申请日：2011-04-01
申请人： Young-Hwan Kim
设计人： Young-Hwan Kim

6. 发明授权

US08156460B2 Method of estimating a leakage current in a semiconductor device 有权
标题翻译：估计半导体器件中漏电流的方法
公开(公告)号：US08156460B2
公开(公告)日：2012-04-10
申请号：US12547729
申请日：2009-08-26
申请人： Kyung-Tae Do , Jung-Yun Choi , Bong-Hyun Lee , Young-Hwan Kim , Hyo-Sig Won , Wook Kim
发明人： Kyung-Tae Do , Jung-Yun Choi , Bong-Hyun Lee , Young-Hwan Kim , Hyo-Sig Won , Wook Kim
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： In a method of estimating a leakage current in a semiconductor device, a chip including a plurality of cells is divided into segments by a grid model. Spatial correlation is determined as spatial correlation between process parameters concerned with the leakage currents in each of the cells. A virtual cell leakage characteristic function of a cell is generated by arithmetically operating actual leakage characteristic functions. A segment leakage characteristic function of a segment is generated by arithmetically operating the virtual cell leakage characteristic functions of all cells in the segment. Then, a full chip leakage characteristic function of the chip is generated by statistically operating the segment leakage characteristic functions of all segments in the chip. Accordingly, computational loads of Wilkinson's method for generating the full chip leakage characteristic function can remarkably be reduced.
摘要翻译：在估计半导体器件中的漏电流的方法中，包括多个单元的芯片通过栅格模型被划分为段。空间相关性被确定为与每个单元中的泄漏电流有关的工艺参数之间的空间相关性。通过算术运算实际泄漏特性函数产生单元的虚拟单元泄漏特性函数。通过对片段中所有单元的虚拟单元泄漏特性函数进行算术运算，产生段的段泄漏特性函数。然后，通过统计操作芯片中所有段的段泄漏特性函数来产生芯片的全芯片泄漏特性功能。因此，Wilkinson用于产生全芯片泄漏特性功能的方法的计算负载可以显着降低。

7. 发明申请

US20100058258A1 Method of Estimating a Leakage Current in a Semiconductor Device 有权
标题翻译：估算半导体器件中泄漏电流的方法
公开(公告)号：US20100058258A1
公开(公告)日：2010-03-04
申请号：US12547729
申请日：2009-08-26
申请人： Kyung Tae Do , Jung-Yun Choi , Bong-Hyun Lee , Young-Hwan Kim , Hyo-Sig Won , Wook Kim
发明人： Kyung Tae Do , Jung-Yun Choi , Bong-Hyun Lee , Young-Hwan Kim , Hyo-Sig Won , Wook Kim
IPC分类号： G06F17/50
CPC分类号： G06F17/5036
摘要： In a method of estimating a leakage current in semiconductor device, a chip including a plurality of cells is divided into segments by a grid model. Spatial correlation is determined as spatial correlation between process parameters concerned with the leakage currents in each of the cells. A virtual cell leakage characteristic function of the cell is generated by arithmetically operating actual leakage characteristic functions. A segment leakage characteristic function is generated by arithmetically operating the virtual cell leakage characteristic functions of each cell in the segment. Then, a full chip leakage characteristic function is generated by statistically operating the segment leakage characteristic functions of each segment in the chip. Accordingly, the computational loads of Wilkinson's method for generating the full chip leakage characteristic function may be remarkably reduced.
摘要翻译：在估计半导体器件中的漏电流的方法中，包括多个单元的芯片通过栅格模型被划分为段。空间相关性被确定为与每个单元中的泄漏电流有关的工艺参数之间的空间相关性。通过算术运算实际漏电特性函数产生单元的虚拟单元泄漏特性函数。通过对片段中每个单元的虚拟单元泄漏特性函数进行算术运算来产生段泄漏特性函数。然后，通过统计操作芯片中每个段的段泄漏特性函数来产生全片泄漏特性函数。因此，威尔金森的用于产生全芯片泄漏特性函数的方法的计算量可以显着降低。

8. 发明申请

US20090132730A1 APPPARATUS AND METHOD FOR CONTROLLING POWER TO USB DEVICE 有权
标题翻译：用于控制USB设备的电源的方法和方法
公开(公告)号：US20090132730A1
公开(公告)日：2009-05-21
申请号：US12300763
申请日：2007-05-15
申请人： Kyung-Beom Kim , Young-Hwan Kim , Tae-Gyun Kim , Min-sick Park , Jae-Han Lee , Jang Gwang-Sig , Sang-Hyun Han
发明人： Kyung-Beom Kim , Young-Hwan Kim , Tae-Gyun Kim , Min-sick Park , Jae-Han Lee , Jang Gwang-Sig , Sang-Hyun Han
IPC分类号： G06F3/00
CPC分类号： G06F1/266
摘要： The present invention relates to an apparatus and method for controlling power to a Universal Serial Bus (USB) device. The present invention provides an apparatus for controlling power to a USB device, the USB device being used to connect a Personal Computer (PC) with a peripheral device, the power control apparatus including a plug-in port for connecting the peripheral device with the PC, a state detector for detecting whether the peripheral device is in a preparation completion state, a power supply unit for supplying power to the USB device, and a power control unit for controlling the power supply unit so that power is supplied to the USB device if it is determined that the peripheral device is in a plugged-in state, and if it is determined that the peripheral device is in a preparation completion state by the state detector. Accordingly, the present invention performs the supply of power only when the peripheral device is plugged into the USB device and its internal application program is in a preparation completion state, so that it can prevent power from being unnecessarily consumed.
摘要翻译：本发明涉及一种用于控制通用串行总线（USB）设备的电源的设备和方法。本发明提供了一种用于控制USB设备的电力的装置，所述USB设备用于将个人计算机（PC）与外围设备连接，所述电源控制设备包括用于将外围设备与PC连接的插入端口，用于检测外围设备是否处于准备完成状态的状态检测器，用于向USB设备供电的电源单元以及用于控制电源单元的电源控制单元，以便向USB设备供电如果确定外围设备处于插入状态，并且如果通过状态检测器确定外围设备处于准备完成状态。因此，本发明仅在外围设备插入USB设备并且其内部应用程序处于准备完成状态时才进行供电，从而可以防止功率被不必要地消耗。

9. 发明授权

US07307269B2 Phase-change RAM containing AIN thermal dissipation layer and TiN electrode 有权
标题翻译：相变RAM包含AIN散热层和TiN电极
公开(公告)号：US07307269B2
公开(公告)日：2007-12-11
申请号：US11270711
申请日：2005-11-08
申请人： Seong-Il Kim , Yong-Tae Kim , Young-Hwan Kim , Chun-Keun Kim , Min-Soo Youm
发明人： Seong-Il Kim , Yong-Tae Kim , Young-Hwan Kim , Chun-Keun Kim , Min-Soo Youm
IPC分类号： H01L29/02
CPC分类号： H01L45/06 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/128 , H01L45/1675
摘要： Provided is a phase-change RAM containing a substrate, a lower electrode, a phase-change material, an upper electrode and a thermal dissipation layer, wherein the thermal dissipation layer contains an aluminum-nitride thermal dissipation layer having a high heat conductivity, and the lower electrode contains a titanium-nitride electrode which generates a great amount of heat generated using a small amount of current and has a low heat conductivity, whereby heat generated between the phase-change material and the electrode is not transferred to the interior of a device but fast dissipated to the exterior thereof, so as to enable a high speed operation using low current and improve reliability of the device.
摘要翻译：提供了一种包含基板，下电极，相变材料，上电极和散热层的相变RAM，其中散热层包含具有高导热性的氮化铝散热层，以及下电极含有氮化钛电极，其产生使用少量电流产生的大量热量并且具有低导热性，由此在相变材料和电极之间产生的热量不会转移到器件，但是快速消散到其外部，以便能够使用低电流的高速操作并且提高器件的可靠性。

10. 发明申请

US20050225371A1 Impulse generation circuit 失效
标题翻译：脉冲发生电路
公开(公告)号：US20050225371A1
公开(公告)日：2005-10-13
申请号：US11082537
申请日：2005-03-17
申请人： Young-Hwan Kim , Seong-Soo Lee , Hak-Sun Kim , Chang-Seok Lee , Soo-Yong Park , Yu-Sin Kim
发明人： Young-Hwan Kim , Seong-Soo Lee , Hak-Sun Kim , Chang-Seok Lee , Soo-Yong Park , Yu-Sin Kim
IPC分类号： H03K3/017 , A61N1/18 , H03K5/06
CPC分类号： H03K5/06
摘要： An impulse generation circuit is provided for generating an impulse using a transmission line. Impulse characteristics of the impulse generation circuit are varied with the length of a transmission line rather than the characteristic variation of various devices used therein. The length of the transmission line is adjusted, such that a width of a generated pulse is adjusted. Because an end of the transmission line is short-circuited, the transmission line length can be easily adjusted on a substrate, and a ringing phenomenon due to re-reflection can be removed using termination impedance.
摘要翻译：提供脉冲发生电路，用于使用传输线产生脉冲。脉冲发生电路的脉冲特性随着传输线的长度而不同于其中使用的各种装置的特性变化而变化。调整传输线的长度，使得产生的脉冲的宽度被调整。由于传输线的一端短路，因此可以在基板上容易地调整传输线路长度，并且可以使用终端阻抗来消除由于再反射引起的振铃现象。

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