专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09052450B2 Nano-fabricated plasmonic optical transformer 有权
标题翻译：纳米制造等离子体光学变压器
公开(公告)号：US09052450B2
公开(公告)日：2015-06-09
申请号：US13083228
申请日：2011-04-08
申请人： Hyuck Choo , Stefano Cabrini , P. James Schuck , Xiaogan Liang , Eli Yablonovitch
发明人： Hyuck Choo , Stefano Cabrini , P. James Schuck , Xiaogan Liang , Eli Yablonovitch
IPC分类号： G11B5/02 , G02F1/035 , G11B5/127 , G11B11/00 , G02B6/122 , B82Y20/00 , G11B7/1387 , G11B7/22
CPC分类号： G02B6/1226 , B82Y20/00 , G11B7/1387 , G11B7/22 , Y10T29/49826 , Y10T428/24612
摘要： The present invention provides a plasmonic optical transformer to produce a highly focuses optical beam spot, where the transformer includes a first metal layer, a dielectric layer formed on the first metal layer, and a second metal layer formed on the dielectric layer, where the first metal layer, the dielectric layer, and the second layer are patterned to a shape including a first section having a first cross section, a second section following the first section having a cross-section tapering from the first section to a smaller cross-section, and a third section following the second section having a cross-section matching the tapered smaller cross-section of the second section.
摘要翻译：本发明提供了一种等离子体激元光变换器，用于产生高度聚焦的光束点，其中变压器包括第一金属层，形成在第一金属层上的电介质层和形成在电介质层上的第二金属层，其中第一金属层，电介质层和第二层被图案化为包括具有第一横截面的第一部分的形状，第一部分之后的第二部分具有从第一部分渐缩到较小横截面的横截面，以及第二部分之后的第三部分具有匹配第二部分的锥形较小横截面的横截面。

2. 发明申请

US20110249546A1 Nano-Fabricated Plasmonic Optical Transformer 有权
标题翻译：纳米制造等离子体光学变压器
公开(公告)号：US20110249546A1
公开(公告)日：2011-10-13
申请号：US13083228
申请日：2011-04-08
申请人： Hyuck Choo , Stefano Cabrini , P. James Schuck , Xiaogan Liang , Eli Yablonovitch
发明人： Hyuck Choo , Stefano Cabrini , P. James Schuck , Xiaogan Liang , Eli Yablonovitch
IPC分类号： G11B7/135 , B23P11/00 , B32B15/04 , G01J3/44 , B32B3/26
CPC分类号： G02B6/1226 , B82Y20/00 , G11B7/1387 , G11B7/22 , Y10T29/49826 , Y10T428/24612
摘要： The present invention provides a plasmonic optical transformer to produce a highly focuses optical beam spot, where the transformer includes a first metal layer, a dielectric layer formed on the first metal layer, and a second metal layer formed on the dielectric layer, where the first metal layer, the dielectric layer, and the second layer are patterned to a shape including a first section having a first cross section, a second section following the first section having a cross-section tapering from the first section to a smaller cross-section, and a third section following the second section having a cross-section matching the tapered smaller cross-section of the second section,
摘要翻译：本发明提供了一种等离子体激元光变换器，用于产生高度聚焦的光束点，其中变压器包括第一金属层，形成在第一金属层上的电介质层和形成在电介质层上的第二金属层，其中第一金属层，电介质层和第二层被图案化为包括具有第一横截面的第一部分的形状，第一部分之后的第二部分具有从第一部分渐缩到较小横截面的横截面，以及第二部分之后的第三部分，其具有与第二部分的锥形较小横截面匹配的横截面，

3. 发明申请

US20140090118A1 PROBES FOR MULTIDIMENSIONAL NANOSPECTROSCOPIC IMAGING AND METHODS OF FABRICATION THEREOF 有权
标题翻译：多元纳米影像成像的探针及其制备方法
公开(公告)号：US20140090118A1
公开(公告)日：2014-03-27
申请号：US14033070
申请日：2013-09-20
申请人： Alexander Weber-Bargioni , Stefano Cabrini , Wei Bao , Mauro Melli , Eli Yablonovitch , Peter J. Schuck
发明人： Alexander Weber-Bargioni , Stefano Cabrini , Wei Bao , Mauro Melli , Eli Yablonovitch , Peter J. Schuck
IPC分类号： G01Q60/22
CPC分类号： G01Q60/22 , B82Y20/00 , B82Y35/00
摘要： This disclosure provides systems, methods, and apparatus related to probes for multidimensional nanospectroscopic imaging. In one aspect, a method includes providing a transparent tip comprising a dielectric material. A four-sided pyramidal-shaped structure is formed at an apex of the transparent tip using a focused ion beam. Metal layers are deposited over two opposing sides of the four-sided pyramidal-shaped structure.
摘要翻译：本公开提供了与多维纳米光谱成像探针有关的系统，方法和装置。一方面，一种方法包括提供包括电介质材料的透明尖端。使用聚焦离子束在透明尖端的顶点处形成四边形的金字塔形结构。金属层沉积在四边形金字塔形结构的两个相对侧上。

4. 发明授权

US08984661B2 Probes for multidimensional nanospectroscopic imaging and methods of fabrication thereof 有权
标题翻译：多维纳米光谱成像探针及其制造方法
公开(公告)号：US08984661B2
公开(公告)日：2015-03-17
申请号：US14033070
申请日：2013-09-20
申请人： Alexander Weber-Bargioni , Stefano Cabrini , Wei Bao , Mauro Melli , Eli Yablonovitch , Peter J. Schuck
发明人： Alexander Weber-Bargioni , Stefano Cabrini , Wei Bao , Mauro Melli , Eli Yablonovitch , Peter J. Schuck
IPC分类号： G01Q70/16 , G01Q60/22 , B82Y20/00 , B82Y35/00
CPC分类号： G01Q60/22 , B82Y20/00 , B82Y35/00
摘要： This disclosure provides systems, methods, and apparatus related to probes for multidimensional nanospectroscopic imaging. In one aspect, a method includes providing a transparent tip comprising a dielectric material. A four-sided pyramidal-shaped structure is formed at an apex of the transparent tip using a focused ion beam. Metal layers are deposited over two opposing sides of the four-sided pyramidal-shaped structure.
摘要翻译：本公开提供了与多维纳米光谱成像探针有关的系统，方法和装置。一方面，一种方法包括提供包括电介质材料的透明尖端。使用聚焦离子束在透明尖端的顶点处形成四边形的金字塔形结构。金属层沉积在四边形金字塔形结构的两个相对侧上。

5. 发明授权

US5172267A Optical reflector structure, device, method of fabrication, and communications method 失效
标题翻译：光反射器结构，器件，制造方法和通信方法
公开(公告)号：US5172267A
公开(公告)日：1992-12-15
申请号：US633405
申请日：1990-12-21
申请人： Eli Yablonovitch
发明人： Eli Yablonovitch
IPC分类号： G02B5/08 , G02B6/122 , H01S5/183
CPC分类号： B82Y20/00 , G02B5/08 , G02B6/1225 , H01S5/18361 , Y10S359/90
摘要： An omnidirectional optical reflector structure (41, 52, 61) is made by forming a plurality of holes in a solid body (11) so as to result in a face-centered cubic lattice. Conventiently, the desired structure can be made by three successive steps of microfabrication, e.g., in the presence of a mask layer (12). Preferred reflector structures can be used, e.g., as external mirrors as filters, and as cavity materials of communications lasers with improved signal-to-noise ratio.
摘要翻译：通过在固体（11）中形成多个孔来制造全向光学反射器结构（41,42,61），以产生面心立方晶格。有利地，可以通过微加工的三个连续步骤，例如在掩模层（12）的存在下进行所需的结构。可以使用优选的反射器结构，例如作为过滤器的外部反射镜，以及具有改善的信噪比的通信激光器的腔体材料。

6. 发明授权

US3979694A Short laser pulse generation by gas breakdown switching and highly selective spectral filtering 失效
标题翻译：通过气体击穿切换和高选择性光谱过滤产生短脉冲
公开(公告)号：US3979694A
公开(公告)日：1976-09-07
申请号：US485361
申请日：1974-07-03
申请人： Julius Goldhar , Eli Yablonovitch
发明人： Julius Goldhar , Eli Yablonovitch
IPC分类号： G01J3/00 , G01J3/18 , H01S3/00 , H01S3/23 , H05H1/22 , H01S3/101
CPC分类号： G01J3/18 , G21B1/23 , H01S3/0057 , H01S3/073 , G01J3/0229
摘要： In a laser pulse generator, short pulses adjustable in the range between about 0.1 and 0.5 nanoseconds are produced by improved spectral filtering of the output of a gas breakdown switch. The spectral filter in one embodiment is a hot, linearly absorbing gas cell that passes both sidebands of the radiation producing the gas breakdown in the switch and that linearly absorbs the center frequency. A second embodiment uses a tandem dual-slit monochromator as the spectral filter in order to pass both sidebands. The hot gas cell is simpler, cheaper and characterized by a higher rejection ratio than any other alternative to date. It yields very clean pulses with a steeper leading edge than prior techniques. The leading edge is highly reproducible, as needed for nuclear fusion work. The advantage over prior pulsed CO.sub.2 lasers for nuclear fusion work is substantial, since those prior lasers have not achieved pulse durations less than one nanosecond.
摘要翻译：在激光脉冲发生器中，通过对气体击穿开关的输出进行改进的频谱滤波来产生可在约0.1和0.5纳秒之间范围内调节的短脉冲。一个实施例中的光谱滤波器是热的线性吸收气室，其通过辐射的两个边带，产生开关中的气体击穿并且线性吸收中心频率。第二实施例使用串联双缝单色仪作为频谱滤波器，以通过两个边带。热气单元比迄今为止任何其他替代方案更简单，便宜并且具有更高的抑制率。它产生非常干净的脉冲，具有比现有技术更陡的前沿。根据核聚变工作的需要，前沿是高度可重复的。与现有的用于核聚变工作的脉冲二氧化碳激光器相比，优点在于现有的激光器未达到小于1纳秒的脉冲持续时间。

7. 发明授权

US4846931A Method for lifting-off epitaxial films 失效
标题翻译：剥离外延膜的方法
公开(公告)号：US4846931A
公开(公告)日：1989-07-11
申请号：US174852
申请日：1988-03-29
申请人： Thomas J. Gmitter , Eli Yablonovitch
发明人： Thomas J. Gmitter , Eli Yablonovitch
IPC分类号： B32B43/00 , C30B25/02 , C30B25/18 , H01L21/20 , H01L21/301
CPC分类号： B32B43/00 , C30B25/02 , C30B25/18 , C30B29/42 , C30B29/68 , H01L21/6835 , H01L2221/68318 , H01L2221/6835 , H01L2221/68363 , H01L2221/68381 , Y10S117/915
摘要： A method for removing epitaxial films from a single crystal substrate upon which it is grown comprising (a) providing a thin release layer (.ltoreq.1000A) between the film to be grown and the substrate; (b) growing the epitaxial film(s); (c) applying a polymeric support layer which is under tension over the film; and (d) selectively etching the release layer, the tension in the support layer causing the edges of the film to curve upwardly as the release layer is etched away.
摘要翻译：一种用于从其生长的单晶衬底去除外延膜的方法，包括：（a）在待生长的膜和衬底之间提供薄的剥离层（

8. 发明授权

US4554727A Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces 失效
标题翻译：使用光刻限定的随机表面制造光学增强的薄膜光伏器件的方法
公开(公告)号：US4554727A
公开(公告)日：1985-11-26
申请号：US612669
申请日：1984-05-22
申请人： Harry W. Deckman , Horst Witzke , Christopher Wronski , Eli Yablonovitch
发明人： Harry W. Deckman , Horst Witzke , Christopher Wronski , Eli Yablonovitch
IPC分类号： F24J2/48 , H01L21/312 , H01L31/075 , H01L31/18
CPC分类号： H01L31/0236 , F24J2/487 , H01L21/312 , H01L31/056 , H01L31/075 , Y02E10/40 , Y02E10/52 , Y02E10/548
摘要： The present invention is a method for producing an optically enhanced thin film photovoltaic device.The method includes the steps of producing an active layer of semiconductor material wherein the surface of at least one side of the active layer is textured such that the surface includes randomly spaced, densely packed microstructures of predetermined dimensions of the order of the wavelength of visible light in the semiconductor material and attaching a reflecting surface directly to one side of the semiconductor material and making an ohmic contact to the material.
摘要翻译：本发明是一种用于制造光学增强薄膜光伏器件的方法。该方法包括以下步骤：制造半导体材料的有源层，其中有源层的至少一侧的表面被纹理化，使得表面包括可见光波长级的预定尺寸的随机分布的密集堆积的微结构在半导体材料中并且将反射表面直接附接到半导体材料的一侧并且与该材料形成欧姆接触。

9. 发明授权

US5201996A Patterning method for epitaxial lift-off processing 失效
标题翻译：外延提升加工方法
公开(公告)号：US5201996A
公开(公告)日：1993-04-13
申请号：US516173
申请日：1990-04-30
申请人： Thomas J. Gmitter , Eli Yablonovitch
发明人： Thomas J. Gmitter , Eli Yablonovitch
IPC分类号： H01L21/302 , H01L21/20 , H01L21/306
CPC分类号： H01L21/02546 , H01L21/02395 , H01L21/02463
摘要： In the fabrication of microelectronic, optoelectronic, and photonic devices, methods are being used which involve selective processing of material in the presence of a patterned mask layer; for example, such processing may involve etching. Typically, mask layer material is chosen on the basis of response to suitable radiation, allowing for patterning by selective irradiation followed by selective removal of mask layer material. However, in so-called epitaxial lift-off processing, material to be processed may be covered with a support layer of a material which is selected in view of desired mechanical and thermal properties, and which is not amenable to patterning by radiation. A method is described which provides for patterning of such layer by heated mechanical means such as a heated stylus or roller.
摘要翻译：在微电子，光电子和光子器件的制造中，正在使用涉及在存在图案化掩模层的情况下选择性地处理材料的方法; 例如，这种处理可能涉及蚀刻。通常，掩模层材料是基于对合适辐射的响应来选择的，允许通过选择性辐射进行图案化，然后选择性地去除掩模层材料。然而，在所谓的外延剥离处理中，待处理的材料可以被覆盖有材料的支撑层，该材料是根据期望的机械和热性质而选择的，并且不适于通过辐射进行图案化。描述了一种方法，其通过加热的机械装置（例如加热的触针或辊）提供对该层的图案化。

10. 发明授权

US4883561A Lift-off and subsequent bonding of epitaxial films 失效
标题翻译：剥离和随后的外延膜的结合
公开(公告)号：US4883561A
公开(公告)日：1989-11-28
申请号：US279217
申请日：1988-12-05
申请人： Thomas J. Gmitter , Eli Yablonovitch
发明人： Thomas J. Gmitter , Eli Yablonovitch
IPC分类号： B32B43/00 , C30B25/02 , C30B25/18 , H01L21/20 , H01L21/306 , H01L21/60
CPC分类号： B32B43/00 , C30B25/02 , C30B25/18 , C30B29/42 , C30B29/68 , H01L24/24 , H01L24/82 , H01L2224/24011 , H01L2224/45144 , H01L2224/48137 , H01L2224/48464 , H01L2224/83894 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01024 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01039 , H01L2924/01072 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/10329 , H01L2924/10336 , H01L2924/12041 , H01L2924/12042 , H01L2924/14 , H01L2924/3511 , Y10S117/915
摘要： A method for removing an epitaxial film from a single crystal substrate upon which it is grown and adhering the films to second substrate and the resultant structure. The removing method comprises (a) providing a thin release layer (.ltoreq.100 nm) between the film to be grown and the single crystal substrate; (b) growing the epitaxial film; (c) applying a polymeric support layer which is under tension over the film; and (d) selectively etching the release layer, the tension in the support layer causing the edges of the film to curve upwardly as the release layer is etched away. The adhering method uses either adhesives or relies solely on Van der Waals bonding between the epitaxial film and the second substrate.
摘要翻译：一种用于从其生长的单晶基板上去除外延膜的方法，并将膜粘附到第二基板和所得结构。去除方法包括（a）在待生长的膜和单晶衬底之间提供薄的剥离层（

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式