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    • 4. 发明授权
    • Short laser pulse generation by gas breakdown switching and highly
selective spectral filtering
    • 通过气体击穿切换和高选择性光谱过滤产生短脉冲
    • US3979694A
    • 1976-09-07
    • US485361
    • 1974-07-03
    • Julius GoldharEli Yablonovitch
    • Julius GoldharEli Yablonovitch
    • G01J3/00G01J3/18H01S3/00H01S3/23H05H1/22H01S3/101
    • G01J3/18G21B1/23H01S3/0057H01S3/073G01J3/0229
    • In a laser pulse generator, short pulses adjustable in the range between about 0.1 and 0.5 nanoseconds are produced by improved spectral filtering of the output of a gas breakdown switch. The spectral filter in one embodiment is a hot, linearly absorbing gas cell that passes both sidebands of the radiation producing the gas breakdown in the switch and that linearly absorbs the center frequency. A second embodiment uses a tandem dual-slit monochromator as the spectral filter in order to pass both sidebands. The hot gas cell is simpler, cheaper and characterized by a higher rejection ratio than any other alternative to date. It yields very clean pulses with a steeper leading edge than prior techniques. The leading edge is highly reproducible, as needed for nuclear fusion work. The advantage over prior pulsed CO.sub.2 lasers for nuclear fusion work is substantial, since those prior lasers have not achieved pulse durations less than one nanosecond.
    • 在激光脉冲发生器中,通过对气体击穿开关的输出进行改进的频谱滤波来产生可在约0.1和0.5纳秒之间范围内调节的短脉冲。 一个实施例中的光谱滤波器是热的线性吸收气室,其通过辐射的两个边带,产生开关中的气体击穿并且线性吸收中心频率。 第二实施例使用串联双缝单色仪作为频谱滤波器,以通过两个边带。 热气单元比迄今为止任何其他替代方案更简单,便宜并且具有更高的抑制率。 它产生非常干净的脉冲,具有比现有技术更陡的前沿。 根据核聚变工作的需要,前沿是高度可重复的。 与现有的用于核聚变工作的脉冲二氧化碳激光器相比,优点在于现有的激光器未达到小于1纳秒的脉冲持续时间。
    • 7. 发明授权
    • Patterning method for epitaxial lift-off processing
    • 外延提升加工方法
    • US5201996A
    • 1993-04-13
    • US516173
    • 1990-04-30
    • Thomas J. GmitterEli Yablonovitch
    • Thomas J. GmitterEli Yablonovitch
    • H01L21/302H01L21/20H01L21/306
    • H01L21/02546H01L21/02395H01L21/02463
    • In the fabrication of microelectronic, optoelectronic, and photonic devices, methods are being used which involve selective processing of material in the presence of a patterned mask layer; for example, such processing may involve etching. Typically, mask layer material is chosen on the basis of response to suitable radiation, allowing for patterning by selective irradiation followed by selective removal of mask layer material. However, in so-called epitaxial lift-off processing, material to be processed may be covered with a support layer of a material which is selected in view of desired mechanical and thermal properties, and which is not amenable to patterning by radiation. A method is described which provides for patterning of such layer by heated mechanical means such as a heated stylus or roller.
    • 在微电子,光电子和光子器件的制造中,正在使用涉及在存在图案化掩模层的情况下选择性地处理材料的方法; 例如,这种处理可能涉及蚀刻。 通常,掩模层材料是基于对合适辐射的响应来选择的,允许通过选择性辐射进行图案化,然后选择性地去除掩模层材料。 然而,在所谓的外延剥离处理中,待处理的材料可以被覆盖有材料的支撑层,该材料是根据期望的机械和热性质而选择的,并且不适于通过辐射进行图案化。 描述了一种方法,其通过加热的机械装置(例如加热的触针或辊)提供对该层的图案化。