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1. 发明申请

US20100151604A1 LIGHT EMITTING DIODE HAVING PLURALITY OF LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有发光二极管的发光二极管及其制造方法
公开(公告)号：US20100151604A1
公开(公告)日：2010-06-17
申请号：US12633603
申请日：2009-12-08
申请人： Dae Sung KAL , Dae Won Kim , Won Cheol Seo , Kyung Hee Ye , Joo Woong Lee
发明人： Dae Sung KAL , Dae Won Kim , Won Cheol Seo , Kyung Hee Ye , Joo Woong Lee
IPC分类号： H01L21/30
CPC分类号： H01L27/153 , H01L24/24 , H01L33/44 , H01L33/507 , H01L33/62 , H01L2224/24137 , H01L2924/12041 , H01L2924/00
摘要： The present invention discloses a light emitting diode. The light emitting diode includes a plurality of light emitting cells arranged on a substrate, each light emitting cell including a first semiconductor layer and a second semiconductor layer arranged on the first semiconductor layer; a first dielectric layer arranged on each light emitting cell and including a first opening to expose the first semiconductor layer and a second opening to expose the second semiconductor layer; a wire arranged on the first dielectric layer to couple two of the light emitting cells; and a second dielectric layer arranged on the first dielectric layer and the wire. The first dielectric layer and the second dielectric layer comprise the same material and the first dielectric layer is thicker than the second dielectric layer.
摘要翻译：本发明公开了一种发光二极管。发光二极管包括布置在基板上的多个发光单元，每个发光单元包括布置在第一半导体层上的第一半导体层和第二半导体层; 布置在每个发光单元上并且包括用于暴露第一半导体层的第一开口和暴露第二半导体层的第二开口的第一电介质层; 布置在所述第一介电层上以连接两个所述发光单元的导线; 以及布置在第一介电层和导线上的第二电介质层。第一电介质层和第二电介质层包含相同的材料，第一电介质层比第二电介质层厚。

2. 发明授权

US07709849B1 Light emitting diode having plurality of light emitting cells and method of fabricating the same 有权
公开(公告)号：US07709849B1
公开(公告)日：2010-05-04
申请号：US12620887
申请日：2009-11-18
申请人： Dae Sung Kal , Dae Won Kim , Won Cheol Seo , Kyung Hee Ye , Joo Woong Lee
发明人： Dae Sung Kal , Dae Won Kim , Won Cheol Seo , Kyung Hee Ye , Joo Woong Lee
IPC分类号： H01L29/18
CPC分类号： H01L27/153 , H01L24/24 , H01L33/44 , H01L33/507 , H01L33/62 , H01L2224/24137 , H01L2924/12041 , H01L2924/00
摘要： The present invention discloses a light emitting diode. The light emitting diode includes a plurality of light emitting cells arranged on a substrate, each light emitting cell including a first semiconductor layer and a second semiconductor layer arranged on the first semiconductor layer; a first dielectric layer arranged on each light emitting cell and including a first opening to expose the first semiconductor layer and a second opening to expose the second semiconductor layer; a wire arranged on the first dielectric layer to couple two of the light emitting cells; and a second dielectric layer arranged on the first dielectric layer and the wire. The first dielectric layer and the second dielectric layer comprise the same material and the first dielectric layer is thicker than the second dielectric layer.

3. 发明授权

US07846755B2 Light emitting diode having plurality of light emitting cells and method of fabricating the same 有权
标题翻译：具有多个发光单元的发光二极管及其制造方法
公开(公告)号：US07846755B2
公开(公告)日：2010-12-07
申请号：US12633603
申请日：2009-12-08
申请人： Dae Sung Kal , Dae Won Kim , Won Cheol Seo , Kyung Hee Ye , Joo Woong Lee
发明人： Dae Sung Kal , Dae Won Kim , Won Cheol Seo , Kyung Hee Ye , Joo Woong Lee
IPC分类号： H01L29/18
CPC分类号： H01L27/153 , H01L24/24 , H01L33/44 , H01L33/507 , H01L33/62 , H01L2224/24137 , H01L2924/12041 , H01L2924/00
摘要： The present invention discloses a light emitting diode. The light emitting diode includes a plurality of light emitting cells arranged on a substrate, each light emitting cell including a first semiconductor layer and a second semiconductor layer arranged on the first semiconductor layer; a first dielectric layer arranged on each light emitting cell and including a first opening to expose the first semiconductor layer and a second opening to expose the second semiconductor layer; a wire arranged on the first dielectric layer to couple two of the light emitting cells; and a second dielectric layer arranged on the first dielectric layer and the wire. The first dielectric layer and the second dielectric layer comprise the same material and the first dielectric layer is thicker than the second dielectric layer.
摘要翻译：本发明公开了一种发光二极管。发光二极管包括布置在基板上的多个发光单元，每个发光单元包括布置在第一半导体层上的第一半导体层和第二半导体层; 布置在每个发光单元上并且包括用于暴露第一半导体层的第一开口和暴露第二半导体层的第二开口的第一电介质层; 布置在所述第一介电层上以连接两个所述发光单元的导线; 以及布置在第一介电层和导线上的第二电介质层。第一电介质层和第二电介质层包含相同的材料，第一电介质层比第二电介质层厚。

4. 发明授权

US08232565B2 Light emitting diode for AC operation 有权
标题翻译：用于交流操作的发光二极管
公开(公告)号：US08232565B2
公开(公告)日：2012-07-31
申请号：US12607644
申请日：2009-10-28
申请人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
发明人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/20 , H01L33/62 , H01L2224/48 , H05B33/0821
摘要： The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.
摘要翻译：本发明公开了一种发光二极管（LED），其包括布置在基板上的多个发光单元。 LED包括每个包括至少一个发光单元的半波发光单元，每个半波发光单元包括分别布置在其两端的第一和第二端子; 和全波发光单元，每个包括至少一个发光单元，每个全波发光单元包括分别在其两端形成的第三和第四端子。每个全波发光单元的第三端子电连接到两个半波发光单元的第二端子，并且每个全波发光单元的第四端子电连接到另外两个半波发光单元的第一端子波发光单元。此外，第一半波发光单元串联连接在第一全波发光单元的第三端子和第二全波发光单元的第四端子之间，并且第二半波发光单元串联连接在第一全波发光单元的第四端子和第二全波发光单元的第三端子之间。

5. 发明申请

US20100102336A1 LIGHT EMITTING DIODE FOR AC OPERATION 有权
标题翻译：用于交流操作的发光二极管
公开(公告)号：US20100102336A1
公开(公告)日：2010-04-29
申请号：US12607506
申请日：2009-10-28
申请人： Chung-Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
发明人： Chung-Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/20 , H01L33/62 , H01L2224/48 , H05B33/0821
摘要： The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.
摘要翻译：本发明公开了一种发光二极管（LED），其包括布置在基板上的多个发光单元。 LED包括每个包括至少一个发光单元的半波发光单元，每个半波发光单元包括分别布置在其两端的第一和第二端子; 和全波发光单元，每个包括至少一个发光单元，每个全波发光单元包括分别在其两端形成的第三和第四端子。每个全波发光单元的第三端子电连接到两个半波发光单元的第二端子，并且每个全波发光单元的第四端子电连接到另外两个半波发光单元的第一端子波发光单元。此外，第一半波发光单元串联连接在第一全波发光单元的第三端子和第二全波发光单元的第四端子之间，并且第二半波发光单元串联连接在第一全波发光单元的第四端子和第二全波发光单元的第三端子之间。

6. 发明授权

US08436389B2 Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same 有权
标题翻译：具有多个非极性发光单元的发光器件及其制造方法
公开(公告)号：US08436389B2
公开(公告)日：2013-05-07
申请号：US13482851
申请日：2012-05-29
申请人： Kwang Choong Kim , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
发明人： Kwang Choong Kim , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L27/153 , H01L33/0079 , H01L33/18 , H01L33/20 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
摘要翻译：本发明涉及具有多个非极性发光单元的发光器件及其制造方法。氮化物半导体层设置在具有上表面的氮化镓衬底上。上表面是非极性或半极性的晶体，相对于c面形成交叉角。氮化物半导体层可以被图案化以形成彼此分离的发光单元。当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

7. 发明授权

US08211724B2 Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same 有权
标题翻译：具有多个非极性发光单元的发光器件及其制造方法
公开(公告)号：US08211724B2
公开(公告)日：2012-07-03
申请号：US12623990
申请日：2009-11-23
申请人： Kwang Choong Kim , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
发明人： Kwang Choong Kim , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
IPC分类号： H01L21/00
CPC分类号： H01L33/32 , H01L27/153 , H01L33/0079 , H01L33/18 , H01L33/20 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
摘要翻译：本发明涉及具有多个非极性发光单元的发光器件及其制造方法。氮化物半导体层设置在具有上表面的氮化镓衬底上。上表面是非极性或半极性的晶体，相对于c面形成交叉角。氮化物半导体层可以被图案化以形成彼此分离的发光单元。当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

8. 发明授权

US08188489B2 Light emitting diode for AC operation 有权
公开(公告)号：US08188489B2
公开(公告)日：2012-05-29
申请号：US12607506
申请日：2009-10-28
申请人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
发明人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/20 , H01L33/62 , H01L2224/48 , H05B33/0821
摘要： The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.

9. 发明申请

US20100163887A1 LIGHT EMITTING DEVICE HAVING A PLURALITY OF NON-POLAR LIGHT EMITTING CELLS AND A METHOD OF FABRICATING THE SAME 有权
标题翻译：具有多个非极性发光电池的发光装置及其制造方法
公开(公告)号：US20100163887A1
公开(公告)日：2010-07-01
申请号：US12623990
申请日：2009-11-23
申请人： Kwang Choong KIM , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
发明人： Kwang Choong KIM , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L27/153 , H01L33/0079 , H01L33/18 , H01L33/20 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
摘要翻译：本发明涉及具有多个非极性发光单元的发光器件及其制造方法。氮化物半导体层设置在具有上表面的氮化镓衬底上。上表面是非极性或半极性的晶体，相对于c面形成交叉角。氮化物半导体层可以被图案化以形成彼此分离的发光单元。当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

10. 发明申请

US20100102337A1 LIGHT EMITTING DIODE FOR AC OPERATION 有权
公开(公告)号：US20100102337A1
公开(公告)日：2010-04-29
申请号：US12607644
申请日：2009-10-28
申请人： Chung-Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
发明人： Chung-Hoon Lee , Dae Won Kim , Dae Sung Kal , Won Cheol Seo , Kyung Hee Ye , Yeo Jin Yoon
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/20 , H01L33/62 , H01L2224/48 , H05B33/0821
摘要： The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units. Also, a first half-wave light emitting unit is connected in series between the third terminal of a first full-wave light emitting unit and the fourth terminal of a second full-wave light emitting units, and a second half-wave light emitting units is connected in series between the fourth terminal of the first full-wave light emitting unit and the third terminal of the second full-wave light emitting unit.

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