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1. 发明授权

US08631360B2 Methodology of optical proximity correction optimization 有权
标题翻译：光学邻近校正优化方法
公开(公告)号：US08631360B2
公开(公告)日：2014-01-14
申请号：US13448977
申请日：2012-04-17
申请人： Hung-Chun Wang , Ming-Hui Chih , Yu-Po Tang , Chia-Ping Chiang , Feng-Ju Chang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
发明人： Hung-Chun Wang , Ming-Hui Chih , Yu-Po Tang , Chia-Ping Chiang , Feng-Ju Chang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/36 , G03F1/70
摘要： A method for performing OPC and evaluating OPC solutions is disclosed. An exemplary method includes receiving a design database corresponding to an IC circuit mask. A first lithography simulation and evaluation is performed on the design database utilizing a first set of performance indexes. A modification is made to the design database based on a result of performing the first lithography simulation and evaluation. A second lithography simulation and evaluation is performed on the design database utilizing a second set of performance indexes to verify the modification. If necessary, the design database is modified again based on a result of the second lithography simulation and evaluation. The modified design database is provided to a mask manufacturer for manufacturing the mask corresponding to the modified design database.
摘要翻译：公开了一种执行OPC和评估OPC解决方案的方法。一种示例性方法包括接收对应于IC电路掩码的设计数据库。使用第一组性能指标对设计数据库执行第一光刻模拟和评估。基于执行第一光刻仿真和评估的结果对设计数据库进行修改。使用第二组性能指标对设计数据库执行第二次光刻模拟和评估，以验证修改。如果需要，基于第二光刻模拟和评估的结果再次修改设计数据库。将修改后的设计数据库提供给掩模制造商以制造与修改的设计数据库相对应的掩模。

2. 发明申请

US20130275926A1 NOVEL METHODOLOGY OF OPTICAL PROXIMITY CORRECTION OPTIMIZATION 有权
标题翻译：光临近度校正优化的新方法
公开(公告)号：US20130275926A1
公开(公告)日：2013-10-17
申请号：US13448977
申请日：2012-04-17
申请人： Hung-Chun Wang , Ming-Hui Chih , Yu-Po Tang , Chia-Ping Chiang , Feng-Ju Chang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
发明人： Hung-Chun Wang , Ming-Hui Chih , Yu-Po Tang , Chia-Ping Chiang , Feng-Ju Chang , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/36 , G03F1/70
摘要： A method for performing OPC and evaluating OPC solutions is disclosed. An exemplary method includes receiving a design database corresponding to an IC circuit mask. A first lithography simulation and evaluation is performed on the design database utilizing a first set of performance indexes. A modification is made to the design database based on a result of performing the first lithography simulation and evaluation. A second lithography simulation and evaluation is performed on the design database utilizing a second set of performance indexes to verify the modification. If necessary, the design database is modified again based on a result of the second lithography simulation and evaluation. The modified design database is provided to a mask manufacturer for manufacturing the mask corresponding to the modified design database.
摘要翻译：公开了一种执行OPC和评估OPC解决方案的方法。一种示例性方法包括接收对应于IC电路掩码的设计数据库。使用第一组性能指标对设计数据库执行第一光刻模拟和评估。基于执行第一光刻仿真和评估的结果对设计数据库进行修改。使用第二组性能指标对设计数据库进行第二次光刻模拟和评估，以验证修改。如果需要，基于第二光刻模拟和评估的结果再次修改设计数据库。将修改后的设计数据库提供给掩模制造商以制造与修改的设计数据库相对应的掩模。

3. 发明申请

US20130246981A1 DISSECTION SPLITTING WITH OPTICAL PROXIMITY CORRECTION TO REDUCE CORNER ROUNDING 有权
标题翻译：具有光学近似校正功能以减少角膜圆形的分离
公开(公告)号：US20130246981A1
公开(公告)日：2013-09-19
申请号：US13419977
申请日：2012-03-14
申请人： Chia-Ping Chiang , Tsong-Hua Ou , Yu-Po Tang , Ming-Hui Chih , Wen-Li Cheng , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
发明人： Chia-Ping Chiang , Tsong-Hua Ou , Yu-Po Tang , Ming-Hui Chih , Wen-Li Cheng , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： H01L27/0207 , G03F1/36 , G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having an main feature, the main feature including two corners and an edge spanning between the two corners; performing a feature adjustment to the edge; performing a dissection to the edge such that the edge is divided to include two corner segments and one center segment between the two corner segments; performing a first optical proximity correction (OPC) to the main feature for a center target associated with the center segment; thereafter, performing a second OPC to the main feature for two corner targets associated with the corner segments; and thereafter, performing a third OPC to main feature for the center target, resulting in a modified design layout.
摘要翻译：本公开提供了集成电路（IC）方法的一个实施例。该方法包括接收具有主要特征的IC设计布局，该主要特征包括两个角部和跨过两个角落的边缘; 对边缘进行特征调整; 对边缘执行解剖，使得边缘被分割成包括两个拐角部分和两个拐角部分之间的一个中心部分; 对与中心段相关联的中心目标的主要特征执行第一光学邻近校正（OPC）; 此后，对与角部分段相关联的两个角目标执行第二OPC到主要特征; 然后对中心目标执行第三OPC到主要特征，从而导致改进的设计布局。

4. 发明授权

US08527916B1 Dissection splitting with optical proximity correction to reduce corner rounding 有权
标题翻译：用光学邻近校正解剖分割以减少圆角
公开(公告)号：US08527916B1
公开(公告)日：2013-09-03
申请号：US13419977
申请日：2012-03-14
申请人： Chia-Ping Chiang , Tsong-Hua Ou , Yu-Po Tang , Ming-Hui Chih , Wen-Li Cheng , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
发明人： Chia-Ping Chiang , Tsong-Hua Ou , Yu-Po Tang , Ming-Hui Chih , Wen-Li Cheng , Cheng Kun Tsai , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： H01L27/0207 , G03F1/36 , G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： The present disclosure provides one embodiment of an integrated circuit (IC) method. The method includes receiving an IC design layout having an main feature, the main feature including two corners and an edge spanning between the two corners; performing a feature adjustment to the edge; performing a dissection to the edge such that the edge is divided to include two corner segments and one center segment between the two corner segments; performing a first optical proximity correction (OPC) to the main feature for a center target associated with the center segment; thereafter, performing a second OPC to the main feature for two corner targets associated with the corner segments; and thereafter, performing a third OPC to main feature for the center target, resulting in a modified design layout.
摘要翻译：本公开提供了集成电路（IC）方法的一个实施例。该方法包括接收具有主要特征的IC设计布局，该主要特征包括两个角部和跨过两个角落的边缘; 对边缘进行特征调整; 对边缘执行解剖，使得边缘被分割成包括两个拐角部分和两个拐角部分之间的一个中心部分; 对与中心段相关联的中心目标的主要特征执行第一光学邻近校正（OPC）; 此后，对与角部分段相关联的两个角目标执行第二OPC到主要特征; 然后对中心目标执行第三OPC到主要特征，从而导致改进的设计布局。

5. 发明申请

US20120072874A1 DISSECTION SPLITTING WITH OPTICAL PROXIMITY CORRECTION AND MASK RULE CHECK ENFORCEMENT 有权
标题翻译：具有光学接近校正和掩蔽规则检查执行的分离
公开(公告)号：US20120072874A1
公开(公告)日：2012-03-22
申请号：US12884442
申请日：2010-09-17
申请人： Chia-Ping Chiang , Yu-Po Tang , Ming-Hui Chih , Cheng-Kun Tsai , Wei-Long Wang , Wen-Chun Huang , Ru-Gun Liu , Tsai-Sheng Gau , Cheng-Lung Tsai , Josh J.H. Feng , Bing-Syun Yeh , Jeng-Shiun Ho , Cheng-Cheng Kuo
发明人： Chia-Ping Chiang , Yu-Po Tang , Ming-Hui Chih , Cheng-Kun Tsai , Wei-Long Wang , Wen-Chun Huang , Ru-Gun Liu , Tsai-Sheng Gau , Cheng-Lung Tsai , Josh J.H. Feng , Bing-Syun Yeh , Jeng-Shiun Ho , Cheng-Cheng Kuo
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： The present disclosure provides one embodiment of an integrated circuit (IC) design method. The method includes receiving an IC design layout having a plurality of main features; applying a main feature dissection to the main features of the IC design layout and generating sub-portions of the main features; performing an optical proximity correction (OPC) to the main features; performing a mask rule check (MRC) to a main feature of the IC design layout; and modifying one of the sub-portions of the main feature if the main feature fails the MRC.
摘要翻译：本公开提供了集成电路（IC）设计方法的一个实施例。该方法包括接收具有多个主要特征的IC设计布局; 将主要特征解剖应用于IC设计布局的主要特征，并生成主要特征的子部分; 对主要特征执行光学邻近校正（OPC）; 执行掩模规则检查（MRC）到IC设计布局的主要特征; 并且如果主要特征使MRC故障，则修改主要特征的一个子部分。

6. 发明授权

US08381153B2 Dissection splitting with optical proximity correction and mask rule check enforcement 有权
标题翻译：用光学邻近校正和掩模规则检查执行的解剖分割
公开(公告)号：US08381153B2
公开(公告)日：2013-02-19
申请号：US12884442
申请日：2010-09-17
申请人： Chia-Ping Chiang , Yu-Po Tang , Ming-Hui Chih , Cheng-Kun Tsai , Wei-Long Wang , Wen-Chun Huang , Ru-Gun Liu , Tsai-Sheng Gau , Cheng-Lung Tsai , Josh J. H. Feng , Bing-Syun Yeh , Jeng-Shiun Ho , Cheng-Cheng Kuo
发明人： Chia-Ping Chiang , Yu-Po Tang , Ming-Hui Chih , Cheng-Kun Tsai , Wei-Long Wang , Wen-Chun Huang , Ru-Gun Liu , Tsai-Sheng Gau , Cheng-Lung Tsai , Josh J. H. Feng , Bing-Syun Yeh , Jeng-Shiun Ho , Cheng-Cheng Kuo
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/12 , Y02P90/265
摘要： The present disclosure provides one embodiment of an integrated circuit (IC) design method. The method includes receiving an IC design layout having a plurality of main features; applying a main feature dissection to the main features of the IC design layout and generating sub-portions of the main features; performing an optical proximity correction (OPC) to the main features; performing a mask rule check (MRC) to a main feature of the IC design layout; and modifying one of the sub-portions of the main feature if the main feature fails the MRC.
摘要翻译：本公开提供了集成电路（IC）设计方法的一个实施例。该方法包括接收具有多个主要特征的IC设计布局; 将主要特征解剖应用于IC设计布局的主要特征，并生成主要特征的子部分; 对主要特征执行光学邻近校正（OPC）; 执行掩模规则检查（MRC）到IC设计布局的主要特征; 并且如果主要特征使MRC故障，则修改主要特征的一个子部分。

7. 发明授权

US08431291B2 Intensity selective exposure photomask 有权
标题翻译：强度选择性曝光光掩模
公开(公告)号：US08431291B2
公开(公告)日：2013-04-30
申请号：US13281198
申请日：2011-10-25
申请人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
发明人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
IPC分类号： G03F1/00 , G03F1/36
CPC分类号： G06F17/5068 , G03F1/00 , G03F1/68
摘要： An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage.
摘要翻译：还提供强度选择性曝光光掩模，还描述为渐变光掩模。光掩模包括包括第一子分解特征阵列的第一区域。第一个区域阻止了第一个入射辐射的百分比。光掩模还包括包括第二子分辨率特征阵列的第二区域。第二个区域阻止了第二个百分比的入射辐射不同于第一个百分比。

8. 发明申请

US20140013287A1 FRACTURE AWARE OPC 有权
公开(公告)号：US20140013287A1
公开(公告)日：2014-01-09
申请号：US13544014
申请日：2012-07-09
申请人： Nian-Fuh Cheng , Yu-Po Tang , Chien-Fu Lee , Sheng-Wen Lin , Yong-Cheng Lin , Wen-Chun Huang , Ru-Gun Liu
发明人： Nian-Fuh Cheng , Yu-Po Tang , Chien-Fu Lee , Sheng-Wen Lin , Yong-Cheng Lin , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36 , G03F1/70
摘要： The present disclosure describes an OPC method of preparing data for forming a mask. The method includes setting a plurality of dissection points at the main feature and further includes setting a target point at the main feature. The method includes arranging the two dissection points crossing the main feature symmetrically each other. The method includes separating two adjacent dissection points at one side of the main feature by a maximum resolution of the mask writer. The method includes dividing the main feature into a plurality of segments using the dissection points. The method includes performing an OPC convergence simulation to a target point. The method includes correcting the segments belonging to an ambit of the target point and further includes correcting the segment shared by two ambits.
摘要翻译：本公开描述了制备用于形成掩模的数据的OPC方法。该方法包括在主要特征处设置多个解剖点，并且还包括在主要特征处设置目标点。该方法包括将两个解剖点布置成彼此对称的主要特征。该方法包括通过掩模写入器的最大分辨率在主要特征的一侧分离两个相邻的解剖点。该方法包括使用解剖点将主要特征划分成多个段。该方法包括对目标点执行OPC收敛模拟。该方法包括校正属于目标点的范围的段，并且还包括校正由两个方位共享的段。

9. 发明授权

US08745550B2 Fracture aware OPC 有权
标题翻译：断裂感知OPC
公开(公告)号：US08745550B2
公开(公告)日：2014-06-03
申请号：US13544014
申请日：2012-07-09
申请人： Nian-Fuh Cheng , Yu-Po Tang , Chien-Fu Lee , Sheng-Wen Lin , Yong-Cheng Lin , Wen-Chun Huang , Ru-Gun Liu
发明人： Nian-Fuh Cheng , Yu-Po Tang , Chien-Fu Lee , Sheng-Wen Lin , Yong-Cheng Lin , Wen-Chun Huang , Ru-Gun Liu
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36 , G03F1/70
摘要： The present disclosure describes an OPC method of preparing data for forming a mask. The method includes setting a plurality of dissection points at the main feature and further includes setting a target point at the main feature. The method includes arranging the two dissection points crossing the main feature symmetrically each other. The method includes separating two adjacent dissection points at one side of the main feature by a maximum resolution of the mask writer. The method includes dividing the main feature into a plurality of segments using the dissection points. The method includes performing an OPC convergence simulation to a target point. The method includes correcting the segments belonging to an ambit of the target point and further includes correcting the segment shared by two ambits.
摘要翻译：本公开描述了制备用于形成掩模的数据的OPC方法。该方法包括在主要特征处设置多个解剖点，并且还包括在主要特征处设置目标点。该方法包括将两个解剖点布置成彼此对称的主要特征。该方法包括通过掩模写入器的最大分辨率在主要特征的一侧分离两个相邻的解剖点。该方法包括使用解剖点将主要特征划分成多个段。该方法包括对目标点执行OPC收敛模拟。该方法包括校正属于目标点的范围的段，并且还包括校正由两个方位共享的段。

10. 发明授权

US08673520B2 Intensity selective exposure photomask 有权
标题翻译：强度选择性曝光光掩模
公开(公告)号：US08673520B2
公开(公告)日：2014-03-18
申请号：US13046265
申请日：2011-03-11
申请人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
发明人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
IPC分类号： G03F1/00
CPC分类号： G06F17/5068 , G03F1/00 , G03F1/68
摘要： An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage. Each of the features of the first and second array includes an opening disposed in an area of attenuating material.
摘要翻译：还提供强度选择性曝光光掩模，还描述为渐变光掩模。光掩模包括包括第一子分解特征阵列的第一区域。第一个区域阻止了第一个入射辐射的百分比。光掩模还包括包括第二子分辨率特征阵列的第二区域。第二个区域阻止了第二个百分比的入射辐射不同于第一个百分比。第一和第二阵列的每个特征包括设置在衰减材料区域中的开口。

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