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1. 发明授权

US06358847B1 Method for enabling conventional wire bonding to copper-based bond pad features 有权
标题翻译：用于使常规引线键合到铜基接合焊盘特征的方法
公开(公告)号：US06358847B1
公开(公告)日：2002-03-19
申请号：US09282596
申请日：1999-03-31
申请人： Hugh Li , Diane J. Hymes
发明人： Hugh Li , Diane J. Hymes
IPC分类号： H01L2144
CPC分类号： H01L24/85 , B08B1/04 , H01L21/31111 , H01L21/32134 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/0381 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48647 , H01L2224/48747 , H01L2224/78301 , H01L2224/85181 , H01L2224/85203 , H01L2224/85207 , H01L2224/85375 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01057 , H01L2924/01072 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A method is described comprising removing an oxide from a surface and then commencing application of a passivation layer to the surface within 5 seconds of the oxide removal. The surface may be a copper surface which may further comprise a bonding pad surface. Removing the oxide may further comprise applying a solution comprising citric acid or hydrochloric acid. Applying the passivation layer may further comprise applying a solution comprising a member of the azole family where the azole family member may further comprise BTA. The method may also further comprise completely applying the passivation layer 35 seconds after commencing its application.
摘要翻译：描述了一种方法，其包括从表面除去氧化物，然后在氧化物去除的5秒内开始将钝化层施加到表面。表面可以是可以进一步包括焊盘表面的铜表面。除去氧化物还可以包括施加包含柠檬酸或盐酸的溶液。施加钝化层还可以包括施加包含唑族的成员的溶液，其中唑类家族成员还可以包含BTA。该方法还可以进一步包括在开始应用之后35秒完全施加钝化层。

2. 发明授权

US06610601B2 Bond pad and wire bond 有权
公开(公告)号：US06610601B2
公开(公告)日：2003-08-26
申请号：US10038980
申请日：2002-01-04
申请人： Hugh Li , Diane J. Hymes
发明人： Hugh Li , Diane J. Hymes
IPC分类号： H01L2144
CPC分类号： H01L24/85 , B08B1/04 , H01L21/31111 , H01L21/32134 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/0381 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48647 , H01L2224/48747 , H01L2224/78301 , H01L2224/85181 , H01L2224/85203 , H01L2224/85207 , H01L2224/85375 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01057 , H01L2924/01072 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A method is described comprising removing an oxide from a surface and then commencing application of a passivation layer to the surface within 5 seconds of the oxide removal. The surface may be a copper surface which may further comprise a bonding pad surface. Removing the oxide may further comprise applying a solution comprising citric acid or hydrochloric acid. Applying the passivation layer may further comprise applying a solution comprising a member of the azole family where the azole family member may further comprise BTA. The method may also further comprise completely applying the passivation layer 35 seconds after commencing its application.

3. 发明授权

US06593282B1 Cleaning solutions for semiconductor substrates after polishing of copper film 失效
标题翻译：抛光铜膜后半导体衬底的清洗液
公开(公告)号：US06593282B1
公开(公告)日：2003-07-15
申请号：US09037586
申请日：1998-03-09
申请人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
发明人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
IPC分类号： C11D1700
CPC分类号： H01L21/02074 , C09K13/00 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
摘要翻译：描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液，方法和设备。本发明包括在酸性pH环境中结合去离子水，有机化合物和铵化合物的清洗溶液，用于在抛光铜层之后对半导体衬底的表面进行清洁。这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。

4. 发明授权

US07135098B2 Copper interconnect seed layer treatment methods and apparatuses for treating the same 有权
公开(公告)号：US07135098B2
公开(公告)日：2006-11-14
申请号：US10188227
申请日：2002-07-01
申请人： Diane J. Hymes
发明人： Diane J. Hymes
IPC分类号： C25D17/00
CPC分类号： H01L21/6723 , C23C18/1653 , H01L21/76843 , H01L21/76861 , H01L21/76873 , H01L21/76877
摘要： A method for making semiconductor interconnect features in a dielectric layer is provided. The method includes depositing a copper seed layer over a barrier layer that is formed over the dielectric layer and into etched features of the dielectric layer. The copper seed layer is then treated to remove an oxidized layer from over the copper seed layer. The method then moves to electroplating a copper fill layer over the treated copper seed layer. The copper fill layer is configured to fill the etched features of the dielectric layer.

5. 发明授权

US06294027B1 Methods and apparatus for cleaning semiconductor substrates after polishing of copper film 有权
标题翻译：用于在抛光铜膜后清洗半导体衬底的方法和设备
公开(公告)号：US06294027B1
公开(公告)日：2001-09-25
申请号：US09227494
申请日：1999-01-07
申请人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
发明人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
IPC分类号： B08B100
CPC分类号： H01L21/02074 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
摘要翻译：描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液，方法和设备。本发明包括在酸性pH环境中结合去离子水，有机化合物和铵化合物的清洗溶液，用于在抛光铜层之后对半导体衬底的表面进行清洁。这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。

6. 发明授权

US06479443B1 Cleaning solution and method for cleaning semiconductor substrates after polishing of copper film 有权
标题翻译：用于清洗铜膜后的半导体衬底的清洗液和清洗方法
公开(公告)号：US06479443B1
公开(公告)日：2002-11-12
申请号：US09568097
申请日：2000-05-09
申请人： Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
发明人： Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
IPC分类号： H01L21302
CPC分类号： C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103 , H01L21/02074
摘要： A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid, an amount of ammonium fluoride, and an amount of hydrogen fluoride in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.09% by weight to about 0.11% by weight, the amount of ammonium fluoride is in a range from about 0.4% by weight to about 0.6% by weight, the amount of hydrogen fluoride is in a range from about 0.09% by weight to about 0.11% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.
摘要翻译：通过将一定量的柠檬酸，一定量的氟化铵和一定量的氟化氢混合在去离子水中形成用于清洁半导体衬底的清洁溶液。在一个实施方案中，柠檬酸的量在约0.09重量％至约0.11重量％的范围内，氟化铵的量在约0.4重量％至约0.6重量％的范围内，的氟化氢的含量为约0.09重量％至约0.11重量％，洗涤液的pH为约4.一种清洗具有抛光铜层的半导体衬底的方法，其中浓缩清洗溶液为与洗涤装置附近的去离子水混合也被描述。

7. 发明授权

US06423200B1 Copper interconnect seed layer treatment methods and apparatuses for treating the same 有权
公开(公告)号：US06423200B1
公开(公告)日：2002-07-23
申请号：US09410110
申请日：1999-09-30
申请人： Diane J. Hymes
发明人： Diane J. Hymes
IPC分类号： C25D502
CPC分类号： H01L21/6723 , C23C18/1653 , H01L21/76843 , H01L21/76861 , H01L21/76873 , H01L21/76877
摘要： A method for making semiconductor interconnect features in a dielectric layer is provided. The method includes depositing a copper seed layer over a barrier layer that is formed over the dielectric layer and into etched features of the dielectric layer. The copper seed layer is then treated to remove an oxidized layer from over the copper seed layer. The method then moves to electroplating a copper fill layer over the treated copper seed layer. The copper fill layer is configured to fill the etched features of the dielectric layer.

8. 发明授权

US06319330B1 Method and apparatus for cleaning low K dielectric and metal wafer surfaces 有权
标题翻译：用于清洁低K电介质和金属晶片表面的方法和设备
公开(公告)号：US06319330B1
公开(公告)日：2001-11-20
申请号：US09618198
申请日：2000-07-18
申请人： Linda (Tong) Jiang , Diane J. Hymes
发明人： Linda (Tong) Jiang , Diane J. Hymes
IPC分类号： B08B704
CPC分类号： H01L21/0206 , B08B1/04 , B08B3/08 , H01L21/02063 , H01L21/02074 , H01L21/67046 , Y10S134/902
摘要： Provided is a method for cleaning hydrophobic surfaces, such as low K dielectric organic or inorganic surfaces as well as metallization surfaces of a semiconductor wafer. The method includes: (a) applying a surfactant solution to the surface; (b) scrubbing the surface; and (c) spin-rinsing the surface of the substrate using de-ionized water to complete a removal of any contaminants from the surface. If needed, the surfactant solution can be mixed with a chemical enhancer, and the scrubbing can be performed in a brush system. The brush system may be configured to apply DI water using a through the brush (TTB) technique. The surfactant solution can be applied either using a drip technique or using the TTB technique.
摘要翻译：提供了用于清洁疏水性表面的方法，例如低K介电有机或无机表面以及半导体晶片的金属化表面。该方法包括：（a）将表面活性剂溶液施用于表面; （b）擦洗表面; 和（c）使用去离子水旋转漂洗基材的表面以完成从表面去除任何污染物。如果需要，表面活性剂溶液可以与化学增强剂混合，并且洗刷可以在刷系统中进行。刷系统可以被配置为使用通过刷（TTB）技术来施加去离子水。表面活性剂溶液可以使用滴灌技术或使用TTB技术来应用。

9. 发明授权

US6162301A Methods and apparatus for cleaning semiconductor substrates after polishing of copper film 有权
标题翻译：用于在抛光铜膜后清洗半导体衬底的方法和设备
公开(公告)号：US6162301A
公开(公告)日：2000-12-19
申请号：US227029
申请日：1999-01-07
申请人： Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
发明人： Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
IPC分类号： C11D1/00 , C11D3/02 , C11D7/02 , C11D7/08 , C11D7/26 , C11D11/00 , C23G1/10 , H01L21/02 , H01L21/304 , H01L21/306 , H01L21/308 , H01L21/3205 , H01L21/321 , H01L21/302 , C11D9/04 , C23G1/02
CPC分类号： H01L21/02074 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
摘要翻译：描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液，方法和设备。本发明包括在酸性pH环境中结合去离子水，有机化合物和氟化合物的清洗溶液，用于在抛光铜层之后对半导体衬底的表面进行清洁。这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。

10. 发明授权

US08591665B2 Wafer heating and temperature control by backside fluid injection 有权
标题翻译：通过背面液体注入进行晶圆加热和温度控制
公开(公告)号：US08591665B2
公开(公告)日：2013-11-26
申请号：US13665702
申请日：2012-10-31
申请人： Ben Mooring , John Parks , Diane J. Hymes
发明人： Ben Mooring , John Parks , Diane J. Hymes
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： H01L21/67109
摘要： Methods, systems, and computer programs are presented for processing a substrate in a processing chamber which includes a first chamber and a second chamber. A first surface of the substrate is exposed to the first chamber and a second surface of the substrate is exposed to the second chamber. One method includes an operation for applying a first fluid to the first surface of the substrate, where the first fluid is at a first temperature. Further, the method includes another operation for applying a second fluid to the second surface of the substrate, where the second fluid is at a second temperature. During processing of the substrate, the second temperature is higher than the first temperature, and the second fluid heats the substrate.
摘要翻译：呈现用于处理包括第一室和第二室的处理室中的衬底的方法，系统和计算机程序。衬底的第一表面暴露于第一腔室，衬底的第二表面暴露于第二腔室。一种方法包括将第一流体施加到基底的第一表面的操作，其中第一流体处于第一温度。此外，该方法包括将第二流体施加到基板的第二表面的另一操作，其中第二流体处于第二温度。在处理基板期间，第二温度高于第一温度，第二流体加热基板。

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