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1. 发明授权

US06593282B1 Cleaning solutions for semiconductor substrates after polishing of copper film 失效
标题翻译：抛光铜膜后半导体衬底的清洗液
公开(公告)号：US06593282B1
公开(公告)日：2003-07-15
申请号：US09037586
申请日：1998-03-09
申请人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
发明人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
IPC分类号： C11D1700
CPC分类号： H01L21/02074 , C09K13/00 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
摘要翻译：描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液，方法和设备。本发明包括在酸性pH环境中结合去离子水，有机化合物和铵化合物的清洗溶液，用于在抛光铜层之后对半导体衬底的表面进行清洁。这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。

2. 发明授权

US06303551B1 Cleaning solution and method for cleaning semiconductor substrates after polishing of cooper film 有权
标题翻译：用于清洗铜膜后的半导体衬底的清洗液和清洗方法
公开(公告)号：US06303551B1
公开(公告)日：2001-10-16
申请号：US09568793
申请日：2000-05-09
申请人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
发明人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
IPC分类号： B08B500
CPC分类号： H01L21/02074 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.18% by weight to about 0.22% by weight and the amount of ammonia is in a range from about 0.0225% by weight to about 0.0275% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.
摘要翻译：通过将一定量的柠檬酸和一定量的氨在去离子水中混合来形成用于清洁半导体衬底的清洁溶液。在一个实施方案中，柠檬酸的量在约0.18重量％至约0.22重量％的范围内，氨的量在约0.0225重量％至约0.0275重量％的范围内，并且清洁溶液的pH为约4.描述了一种清洗具有抛光铜层的半导体衬底的方法，其中浓缩清洗溶液与靠近洗涤装置的去离子水混合。

3. 发明授权

US06294027B1 Methods and apparatus for cleaning semiconductor substrates after polishing of copper film 有权
标题翻译：用于在抛光铜膜后清洗半导体衬底的方法和设备
公开(公告)号：US06294027B1
公开(公告)日：2001-09-25
申请号：US09227494
申请日：1999-01-07
申请人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
发明人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
IPC分类号： B08B100
CPC分类号： H01L21/02074 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
摘要翻译：描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液，方法和设备。本发明包括在酸性pH环境中结合去离子水，有机化合物和铵化合物的清洗溶液，用于在抛光铜层之后对半导体衬底的表面进行清洁。这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。

4. 发明授权

US06927198B2 Methods and apparatus for cleaning semiconductor substrates after polishing of copper film 失效
标题翻译：用于在抛光铜膜后清洗半导体衬底的方法和设备
公开(公告)号：US06927198B2
公开(公告)日：2005-08-09
申请号：US10639841
申请日：2003-08-12
申请人： Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
发明人： Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
IPC分类号： C11D1/00 , C11D3/02 , C11D7/02 , C11D7/08 , C11D7/26 , C11D11/00 , C23G1/10 , H01L21/02 , H01L21/304 , H01L21/306 , H01L21/308 , H01L21/3205 , H01L21/321
CPC分类号： H01L21/02074 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
摘要翻译：描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液，方法和设备。本发明包括在酸性pH环境中结合去离子水，有机化合物和氟化合物的清洗溶液，用于在抛光铜层之后对半导体衬底的表面进行清洁。这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。

5. 发明授权

US6165956A Methods and apparatus for cleaning semiconductor substrates after polishing of copper film 失效
公开(公告)号：US6165956A
公开(公告)日：2000-12-26
申请号：US955393
申请日：1997-10-21
申请人： Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
发明人： Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
IPC分类号： C11D1/00 , C11D3/02 , C11D7/02 , C11D7/08 , C11D7/26 , C11D11/00 , C23G1/10 , H01L21/02 , H01L21/304 , H01L21/306 , H01L21/308 , H01L21/3205 , H01L21/321 , C11D9/04 , C11D15/00 , C11D17/08
CPC分类号： H01L21/02074 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.

6. 发明授权

US06479443B1 Cleaning solution and method for cleaning semiconductor substrates after polishing of copper film 有权
标题翻译：用于清洗铜膜后的半导体衬底的清洗液和清洗方法
公开(公告)号：US06479443B1
公开(公告)日：2002-11-12
申请号：US09568097
申请日：2000-05-09
申请人： Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
发明人： Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
IPC分类号： H01L21302
CPC分类号： C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103 , H01L21/02074
摘要： A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid, an amount of ammonium fluoride, and an amount of hydrogen fluoride in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.09% by weight to about 0.11% by weight, the amount of ammonium fluoride is in a range from about 0.4% by weight to about 0.6% by weight, the amount of hydrogen fluoride is in a range from about 0.09% by weight to about 0.11% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.
摘要翻译：通过将一定量的柠檬酸，一定量的氟化铵和一定量的氟化氢混合在去离子水中形成用于清洁半导体衬底的清洁溶液。在一个实施方案中，柠檬酸的量在约0.09重量％至约0.11重量％的范围内，氟化铵的量在约0.4重量％至约0.6重量％的范围内，的氟化氢的含量为约0.09重量％至约0.11重量％，洗涤液的pH为约4.一种清洗具有抛光铜层的半导体衬底的方法，其中浓缩清洗溶液为与洗涤装置附近的去离子水混合也被描述。

7. 发明授权

US6162301A Methods and apparatus for cleaning semiconductor substrates after polishing of copper film 有权
标题翻译：用于在抛光铜膜后清洗半导体衬底的方法和设备
公开(公告)号：US6162301A
公开(公告)日：2000-12-19
申请号：US227029
申请日：1999-01-07
申请人： Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
发明人： Liming Zhang , Yuexing Zhao , Diane J. Hymes , Wilbur C. Krusell
IPC分类号： C11D1/00 , C11D3/02 , C11D7/02 , C11D7/08 , C11D7/26 , C11D11/00 , C23G1/10 , H01L21/02 , H01L21/304 , H01L21/306 , H01L21/308 , H01L21/3205 , H01L21/321 , H01L21/302 , C11D9/04 , C23G1/02
CPC分类号： H01L21/02074 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
摘要翻译：描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液，方法和设备。本发明包括在酸性pH环境中结合去离子水，有机化合物和氟化合物的清洗溶液，用于在抛光铜层之后对半导体衬底的表面进行清洁。这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。

8. 发明授权

US07079354B1 Planar magnetic head 失效
标题翻译：平面磁头
公开(公告)号：US07079354B1
公开(公告)日：2006-07-18
申请号：US09638663
申请日：2000-08-14
申请人： Robert E. Fontana , Richard Hsiao , Yuexing Zhao
发明人： Robert E. Fontana , Richard Hsiao , Yuexing Zhao
IPC分类号： G11B5/147
CPC分类号： G11B5/3116 , G11B5/3103 , G11B5/313 , G11B5/3163 , G11B5/332 , Y10T29/49032
摘要： A magnetic head including a second magnetic pole (P2 pole) that is fabricated upon a write gap layer that is deposited upon a flat surface. To achieve the flat surface, a P1 pole pedestal is formed upon the P1 pole layer with a sufficient thickness that the induction coil structure can be fabricated beneath the write gap layer. In the preferred embodiment, an etch stop layer is formed upon the P1 pole layer and an ion etching process is utilized to form the induction coil trenches in an etchable material that is deposited upon the etch stop layer. Following the fabrication of the induction coil structure a CMP process is conducted to obtain a polished flat surface upon which to deposit the write gap layer, and the P2 pole is then fabricated upon the flat write gap layer.
摘要翻译：一种磁头，包括在沉积在平坦表面上的写间隙层上制造的第二磁极（P2极）。为了实现平坦表面，P1极基座以足够的厚度形成在P1极层上，使得感应线圈结构可以在写间隙层下方制造。在优选实施例中，在P1极层上形成蚀刻停止层，并且使用离子蚀刻工艺以沉积在蚀刻停止层上的可蚀刻材料形成感应线圈沟槽。在感应线圈结构的制造之后，进行CMP工艺以获得抛光的平坦表面，在其上沉积写间隙层，然后在平面写间隙层上制造P2极。

9. 发明授权

US06949200B2 Planar magnetic head and fabrication method therefor 失效
标题翻译：平面磁头及其制造方法
公开(公告)号：US06949200B2
公开(公告)日：2005-09-27
申请号：US10610971
申请日：2003-06-30
申请人： Robert E. Fontana , Richard Hsiao , Yuexing Zhao
发明人： Robert E. Fontana , Richard Hsiao , Yuexing Zhao
IPC分类号： G11B5/31 , G11B5/33 , G11B5/17
CPC分类号： G11B5/3116 , G11B5/3103 , G11B5/313 , G11B5/3163 , G11B5/332 , Y10T29/49032
摘要： The magnetic head of the present invention, includes a second magnetic pole (P2 pole) that is fabricated upon a write gap layer that is deposited upon a flat surface. To achieve the flat surface, a P1 pole pedestal is formed upon the P1 pole layer with a sufficient thickness that the induction coil structure can be fabricated beneath the write gap layer. In the preferred embodiment, an etch stop layer is formed upon the P1 pole layer and an ion etching process is utilized to form the induction coil trenches in an etchable material that is deposited upon the etch stop layer. Following the fabrication of the induction coil structure a CMP process is conducted to obtain a polished flat surface upon which to deposit the write gap layer, and the P2 pole is then fabricated upon the flat write gap layer.The magnetic head of the present invention can be reliably fabricated with a more narrow P2 pole tip base width, such that data tracks written by the magnetic head are likewise narrower. A hard disk drive including the magnetic head of the present invention therefore possesses narrower written data tracks, such that the areal data storage density of the hard disk drive is increased.
摘要翻译：本发明的磁头包括在沉积在平坦表面上的写间隙层上制造的第二磁极（P 2极）。为了实现平坦表面，P 1极基座形成在P 1极层上，具有足够的厚度，使感应线圈结构可以在写间隙层下方制造。在优选实施例中，在P 1极层上形成蚀刻停止层，并且使用离子蚀刻工艺在沉积在蚀刻停止层上的可蚀刻材料中形成感应线圈沟槽。在制造感应线圈结构之后，进行CMP工艺以获得抛光的平坦表面，在其上沉积写间隙层，然后在平面写间隙层上制造P 2极。本发明的磁头可以可靠地制造成具有更窄的P 2极尖基座宽度，使得由磁头写入的数据轨道同样较窄。因此，包括本发明的磁头的硬盘驱动器具有较窄的写入数据磁道，使得硬盘驱动器的面积数据存储密度增加。

10. 发明授权

US06552812B1 Method and system for measuring threshold length 失效
标题翻译：测量阈值长度的方法和系统
公开(公告)号：US06552812B1
公开(公告)日：2003-04-22
申请号：US09636340
申请日：2000-08-10
申请人： Cangshan Xu , Yuexing Zhao
发明人： Cangshan Xu , Yuexing Zhao
IPC分类号： G01B1106
CPC分类号： G01B11/0616
摘要： A method and system for measuring threshold length of a planarization process, and for comparing the planarization abilities of such processes. The method and system measure a thickness profile of a film on a blanket wafer, and from the thickness profile, a threshold length is calculated.
摘要翻译：一种用于测量平坦化过程的阈值长度并用于比较这些处理的平坦化能力的方法和系统。该方法和系统测量覆盖圆片上的膜的厚度分布，并根据厚度分布计算阈值长度。

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