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1. 发明授权

US06593282B1 Cleaning solutions for semiconductor substrates after polishing of copper film 失效
标题翻译：抛光铜膜后半导体衬底的清洗液
公开(公告)号：US06593282B1
公开(公告)日：2003-07-15
申请号：US09037586
申请日：1998-03-09
申请人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
发明人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
IPC分类号： C11D1700
CPC分类号： H01L21/02074 , C09K13/00 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
摘要翻译：描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液，方法和设备。本发明包括在酸性pH环境中结合去离子水，有机化合物和铵化合物的清洗溶液，用于在抛光铜层之后对半导体衬底的表面进行清洁。这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。

2. 发明授权

US08591665B2 Wafer heating and temperature control by backside fluid injection 有权
标题翻译：通过背面液体注入进行晶圆加热和温度控制
公开(公告)号：US08591665B2
公开(公告)日：2013-11-26
申请号：US13665702
申请日：2012-10-31
申请人： Ben Mooring , John Parks , Diane J. Hymes
发明人： Ben Mooring , John Parks , Diane J. Hymes
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： H01L21/67109
摘要： Methods, systems, and computer programs are presented for processing a substrate in a processing chamber which includes a first chamber and a second chamber. A first surface of the substrate is exposed to the first chamber and a second surface of the substrate is exposed to the second chamber. One method includes an operation for applying a first fluid to the first surface of the substrate, where the first fluid is at a first temperature. Further, the method includes another operation for applying a second fluid to the second surface of the substrate, where the second fluid is at a second temperature. During processing of the substrate, the second temperature is higher than the first temperature, and the second fluid heats the substrate.
摘要翻译：呈现用于处理包括第一室和第二室的处理室中的衬底的方法，系统和计算机程序。衬底的第一表面暴露于第一腔室，衬底的第二表面暴露于第二腔室。一种方法包括将第一流体施加到基底的第一表面的操作，其中第一流体处于第一温度。此外，该方法包括将第二流体施加到基板的第二表面的另一操作，其中第二流体处于第二温度。在处理基板期间，第二温度高于第一温度，第二流体加热基板。

3. 发明授权

US08328942B2 Wafer heating and temperature control by backside fluid injection 有权
标题翻译：通过背面液体注入进行晶圆加热和温度控制
公开(公告)号：US08328942B2
公开(公告)日：2012-12-11
申请号：US11015968
申请日：2004-12-17
申请人： Ben Mooring , John Parks , Diane J. Hymes
发明人： Ben Mooring , John Parks , Diane J. Hymes
IPC分类号： C23C16/00
CPC分类号： H01L21/67109
摘要： In one of the many embodiments, an apparatus for processing a substrate is provided which includes a substrate processing chamber where the substrate is positioned within the substrate processing chamber so the substrate at least partially separates the substrate processing chamber into a first chamber and a second chamber. The apparatus further includes a first chamber inlet configured to input a first fluid of a first temperature into the first chamber at a first pressure and a second chamber inlet configured to input a second fluid of a second temperature into the second chamber at a second pressure wherein the first pressure and the second pressure are substantially equal. The second temperature is capable of being utilized to manage substrate temperature.
摘要翻译：在许多实施例中的一个实施例中，提供了一种用于处理衬底的装置，其包括衬底处理室，其中衬底位于衬底处理室内，使得衬底至少部分地将衬底处理室分离成第一腔室和第二腔室。该装置还包括第一室入口，其构造成在第一压力下将第一温度的第一流体输入到第一室中，并且第二室入口构造成在第二压力下将第二温度的第二流体输入到第二室中，第一压力和第二压力基本相等。第二个温度可以用来管理衬底温度。

4. 发明授权

US06303551B1 Cleaning solution and method for cleaning semiconductor substrates after polishing of cooper film 有权
标题翻译：用于清洗铜膜后的半导体衬底的清洗液和清洗方法
公开(公告)号：US06303551B1
公开(公告)日：2001-10-16
申请号：US09568793
申请日：2000-05-09
申请人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
发明人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
IPC分类号： B08B500
CPC分类号： H01L21/02074 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution for cleaning a semiconductor substrate is formed by mixing an amount of citric acid and an amount of ammonia in deionized water. In one embodiment, the amount of citric acid is in a range from about 0.18% by weight to about 0.22% by weight and the amount of ammonia is in a range from about 0.0225% by weight to about 0.0275% by weight, and the cleaning solution has a pH of about 4. A method for cleaning a semiconductor substrate having a polished copper layer in which a concentrated cleaning solution is mixed with deionized water proximate to a scrubbing apparatus also is described.
摘要翻译：通过将一定量的柠檬酸和一定量的氨在去离子水中混合来形成用于清洁半导体衬底的清洁溶液。在一个实施方案中，柠檬酸的量在约0.18重量％至约0.22重量％的范围内，氨的量在约0.0225重量％至约0.0275重量％的范围内，并且清洁溶液的pH为约4.描述了一种清洗具有抛光铜层的半导体衬底的方法，其中浓缩清洗溶液与靠近洗涤装置的去离子水混合。

5. 发明授权

US06277203B1 Method and apparatus for cleaning low K dielectric and metal wafer surfaces 有权
标题翻译：用于清洁低K电介质和金属晶片表面的方法和设备
公开(公告)号：US06277203B1
公开(公告)日：2001-08-21
申请号：US09197348
申请日：1998-11-20
申请人： Linda Jiang , Diane J. Hymes
发明人： Linda Jiang , Diane J. Hymes
IPC分类号： C23G102
CPC分类号： H01L21/0206 , B08B1/04 , B08B3/08 , H01L21/02063 , H01L21/02074 , H01L21/67046 , Y10S134/902
摘要： Provided is a method for cleaning hydrophobic surfaces, such as low K dielectric organic or inorganic surfaces as well as metallization surfaces of a semiconductor wafer. The method includes: (a) applying a surfactant solution to the surface; (c) scrubbing the surface; and (c) spin-rinsing the surface of the substrate using de-ionized water to complete a removal of any contaminants from the surface. If needed, the surfactant solution can be mixed with a chemical enhancer, and the scrubbing can be performed in a brush system. The brush system may be configured to apply DI water using a through the brush (TTB) technique. The surfactant solution can be applied either using a drip technique or using the TTB technique.
摘要翻译：提供了用于清洁疏水性表面的方法，例如低K介电有机或无机表面以及半导体晶片的金属化表面。该方法包括：（a）将表面活性剂溶液施用于表面; （c）擦洗表面; 和（c）使用去离子水旋转漂洗基材的表面以完成从表面去除任何污染物。如果需要，表面活性剂溶液可以与化学增强剂混合，并且洗刷可以在刷系统中进行。刷系统可以被配置为使用通过刷（TTB）技术来施加去离子水。表面活性剂溶液可以使用滴灌技术或使用TTB技术来应用。

6. 发明授权

US6145148A Method and apparatus for cleaning of semiconductor substrates using hydrofluoric acid (HF) 失效
标题翻译：使用氢氟酸（HF）清洗半导体衬底的方法和设备
公开(公告)号：US6145148A
公开(公告)日：2000-11-14
申请号：US227499
申请日：1999-01-07
申请人： Diane J. Hymes , Michael Ravkin , Xiuhua Zhang , Wilbur C. Krusell
发明人： Diane J. Hymes , Michael Ravkin , Xiuhua Zhang , Wilbur C. Krusell
IPC分类号： A46B11/06 , B08B1/04 , B08B3/08 , H01L21/00 , H01L21/306 , H01L21/311 , A46B13/04
CPC分类号： H01L21/02052 , A46B11/06 , B08B1/007 , B08B1/04 , B08B3/08 , H01L21/31111 , H01L21/67046 , Y10S134/902
摘要： A cleaning method and apparatus using very dilute hydrofluoric acid (BF) for cleaning silicon wafers and semiconductor substrates. The HF is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the substrate. This delivery system applies the chemical solutions uniformly to the semiconductor substrate and reduces the volumes of chemical solutions used in a scrubbing process. The process of the present invention uses very dilute HF and allows a thin oxide to be etched but not completely removed so as to maintain a hydrophilic surface state. Thus, this invention presents a chemical mechanical cleaning process with in-situ etching with the use of PVA brushes on a brush scrubber. Very accurate control of etch rate is obtained and, therefore, makes this process suitable to multiple cleaning applications of silicon wafers and semiconductor substrates.
摘要翻译：一种使用非常稀的氢氟酸（BF）清洗硅晶片和半导体衬底的清洗方法和设备。将HF输送到刷子的芯部，其中溶液被刷子吸收，然后通过刷子施加到基底上。该递送系统将化学溶液均匀地施加到半导体衬底并减少在洗涤过程中使用的化学溶液的体积。本发明的方法使用非常稀的HF，并允许蚀刻薄氧化物但不能完全去除以保持亲水表面状态。因此，本发明提出了一种利用在刷洗涤器上使用PVA刷的原位蚀刻的化学机械清洁方法。获得非常精确的蚀刻速度控制，因此使该工艺适合于硅片和半导体衬底的多次清洁应用。

7. 发明授权

US5858109A Method and apparatus for cleaning of semiconductor substrates using standard clean 1 (SC1) 失效
标题翻译：使用标准清洁1（SC1）清洁半导体衬底的方法和设备
公开(公告)号：US5858109A
公开(公告)日：1999-01-12
申请号：US792093
申请日：1997-01-31
申请人： Diane J. Hymes , Mikhail Ravkin , Wibur C. Krusell , Venus Noorai
发明人： Diane J. Hymes , Mikhail Ravkin , Wibur C. Krusell , Venus Noorai
IPC分类号： A46B11/06 , B08B1/04 , B08B3/08 , H01L21/00 , H01L21/306 , H01L21/311 , B08B7/00
CPC分类号： H01L21/02052 , A46B11/06 , B08B1/007 , B08B1/04 , B08B3/08 , H01L21/31111 , H01L21/67046 , Y10S134/902
摘要： A cleaning method and apparatus using very dilute Standard Clean 1 (SC1) for cleaning semiconductor substrates, including silicon wafers. The SC1 is delivered to the core of a brush where the solution is absorbed by the brush and then applied by the brush onto the substrate. This delivery system applies the chemical solutions uniformly to the semiconductor substrate and reduces the volumes of chemical solutions used in a scrubbing process. The process of the present invention uses SC1 to convert substrate surfaces from a hydrophobic state to a hydrophilic surface state while cleaning the wafer with the brush. A hydrophilic surface state is necessary to successfully remove surface contaminants by chemical mechanical brush cleaning.
摘要翻译：使用非常稀的标准清洁1（SC1）清洁包括硅晶片在内的半导体衬底的清洁方法和设备。 SC1被传送到刷子的芯部，其中溶液被刷子吸收，然后通过刷子施加到基底上。该递送系统将化学溶液均匀地施加到半导体衬底并减少在洗涤过程中使用的化学溶液的体积。本发明的方法使用SC1将衬底表面从疏水状态转换为亲水表面状态，同时用刷子清洁晶片。通过化学机械刷清洁来成功去除表面污染物需要亲水表面状态。

8. 发明授权

US07135098B2 Copper interconnect seed layer treatment methods and apparatuses for treating the same 有权
公开(公告)号：US07135098B2
公开(公告)日：2006-11-14
申请号：US10188227
申请日：2002-07-01
申请人： Diane J. Hymes
发明人： Diane J. Hymes
IPC分类号： C25D17/00
CPC分类号： H01L21/6723 , C23C18/1653 , H01L21/76843 , H01L21/76861 , H01L21/76873 , H01L21/76877
摘要： A method for making semiconductor interconnect features in a dielectric layer is provided. The method includes depositing a copper seed layer over a barrier layer that is formed over the dielectric layer and into etched features of the dielectric layer. The copper seed layer is then treated to remove an oxidized layer from over the copper seed layer. The method then moves to electroplating a copper fill layer over the treated copper seed layer. The copper fill layer is configured to fill the etched features of the dielectric layer.

9. 发明授权

US06358847B1 Method for enabling conventional wire bonding to copper-based bond pad features 有权
标题翻译：用于使常规引线键合到铜基接合焊盘特征的方法
公开(公告)号：US06358847B1
公开(公告)日：2002-03-19
申请号：US09282596
申请日：1999-03-31
申请人： Hugh Li , Diane J. Hymes
发明人： Hugh Li , Diane J. Hymes
IPC分类号： H01L2144
CPC分类号： H01L24/85 , B08B1/04 , H01L21/31111 , H01L21/32134 , H01L24/45 , H01L24/48 , H01L24/78 , H01L2224/0381 , H01L2224/05647 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48647 , H01L2224/48747 , H01L2224/78301 , H01L2224/85181 , H01L2224/85203 , H01L2224/85207 , H01L2224/85375 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01057 , H01L2924/01072 , H01L2924/01079 , H01L2924/01327 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要： A method is described comprising removing an oxide from a surface and then commencing application of a passivation layer to the surface within 5 seconds of the oxide removal. The surface may be a copper surface which may further comprise a bonding pad surface. Removing the oxide may further comprise applying a solution comprising citric acid or hydrochloric acid. Applying the passivation layer may further comprise applying a solution comprising a member of the azole family where the azole family member may further comprise BTA. The method may also further comprise completely applying the passivation layer 35 seconds after commencing its application.
摘要翻译：描述了一种方法，其包括从表面除去氧化物，然后在氧化物去除的5秒内开始将钝化层施加到表面。表面可以是可以进一步包括焊盘表面的铜表面。除去氧化物还可以包括施加包含柠檬酸或盐酸的溶液。施加钝化层还可以包括施加包含唑族的成员的溶液，其中唑类家族成员还可以包含BTA。该方法还可以进一步包括在开始应用之后35秒完全施加钝化层。

10. 发明授权

US06294027B1 Methods and apparatus for cleaning semiconductor substrates after polishing of copper film 有权
标题翻译：用于在抛光铜膜后清洗半导体衬底的方法和设备
公开(公告)号：US06294027B1
公开(公告)日：2001-09-25
申请号：US09227494
申请日：1999-01-07
申请人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
发明人： Xu Li , Yuexing Zhao , Diane J. Hymes , John M. de Larios
IPC分类号： B08B100
CPC分类号： H01L21/02074 , C11D7/08 , C11D7/265 , C11D11/0047 , C23G1/103
摘要： A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and an ammonium compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
摘要翻译：描述了在铜膜化学机械抛光之后清洗半导体衬底的清洁溶液，方法和设备。本发明包括在酸性pH环境中结合去离子水，有机化合物和铵化合物的清洗溶液，用于在抛光铜层之后对半导体衬底的表面进行清洁。这种在铜CMP之后清洁半导体衬底的方法减轻了与刷子加载和表面和地下污染相关的问题。

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