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1. 发明授权

US06617928B2 Configurable power amplifier and bias control 有权
公开(公告)号：US06617928B2
公开(公告)日：2003-09-09
申请号：US09971523
申请日：2001-10-05
申请人： Hugh J. Finlay , Mark Bloom , Thomas Fowler
发明人： Hugh J. Finlay , Mark Bloom , Thomas Fowler
IPC分类号： H03F304
CPC分类号： H03F1/302
摘要： The bias control selectively provides for bias of a power amplifier based upon a bandgap voltage generated by the bias control, or by a bias voltage external to the bias control. A controller controls the selection of either the bandgap voltage or external bias voltage. The bias control is fabricated in a first semiconductor material capable of operating at low voltage supply levels, such as complementary metal oxide semiconductor (CMOS) material and may be fabricated on an integrated circuit common with a power amplifier.

2. 发明授权

US07443246B2 Constant current biasing circuit for linear power amplifiers 有权
标题翻译：线性功率放大器的恒流偏置电路
公开(公告)号：US07443246B2
公开(公告)日：2008-10-28
申请号：US10691115
申请日：2003-10-21
申请人： Paul Andrys , Mark Bloom , Hugh J. Finlay , David Ripley , Terry Shie , Kevin Hoheisel
发明人： Paul Andrys , Mark Bloom , Hugh J. Finlay , David Ripley , Terry Shie , Kevin Hoheisel
IPC分类号： H03F3/04
CPC分类号： H03F3/343 , H03F1/0261 , H03F1/302 , H03F2200/18 , H03F2200/453 , H03F2200/513
摘要： A constant current bias approach that receives an input bias voltage and maintains a temperature independent constant current bias in a linear amplifier device. Integrated sense circuitry protects against unacceptable input voltages to guarantee bias stability. Fabrication in multiple semiconductor technologies and assembly into a single package allows for optimum cost and performance of DC bias and RF amplifier sections.
摘要翻译：恒定电流偏置方法，其接收输入偏置电压并且在线性放大器装置中保持与温度无关的恒定电流偏置。集成感测电路可防止不可接受的输入电压，以保证偏置稳定性。多个半导体技术的制造和组装成单个封装允许DC偏置和RF放大器部分的最佳成本和性能。

3. 发明授权

US06639470B1 Constant current biasing circuit for linear power amplifiers 有权
标题翻译：线性功率放大器的恒流偏置电路
公开(公告)号：US06639470B1
公开(公告)日：2003-10-28
申请号：US09693398
申请日：2000-10-21
申请人： Paul Andrys , Mark Bloom , Hugh J. Finlay , David Ripley , Terry Shie , Kevin Hoheisel
发明人： Paul Andrys , Mark Bloom , Hugh J. Finlay , David Ripley , Terry Shie , Kevin Hoheisel
IPC分类号： H03F304
CPC分类号： H03F3/343 , H03F1/0261 , H03F1/302 , H03F2200/18 , H03F2200/453 , H03F2200/513
摘要： A constant current bias approach that receives an input bias voltage and maintains a temperature independent constant current bias in a linear amplifier device. Integrated sense circuitry protects against unacceptable input voltages to guarantee bias stability. Fabrication in multiple semiconductor technologies and assembly into a single package allows for optimum cost and performance of DC bias and RF amplifier sections.
摘要翻译：恒定电流偏置方法，其接收输入偏置电压并且在线性放大器装置中保持与温度无关的恒定电流偏置。集成感测电路可防止不可接受的输入电压，以保证偏置稳定性。多个半导体技术的制造和组装成单个封装允许DC偏置和RF放大器部分的最佳成本和性能。

4. 发明授权

US06954623B2 Load variation tolerant radio frequency (RF) amplifier 有权
标题翻译：负载变化容忍射频（RF）放大器
公开(公告)号：US06954623B2
公开(公告)日：2005-10-11
申请号：US10392344
申请日：2003-03-18
申请人： Shiaw W. Chang , Hugh J. Finlay , Nai-Shuo Cheng , Bon-Seok Park
发明人： Shiaw W. Chang , Hugh J. Finlay , Nai-Shuo Cheng , Bon-Seok Park
IPC分类号： H04B1/04 , H04B5/00 , H04B5/06
CPC分类号： H04B5/06 , H03F3/602 , H04B1/0458 , H04B5/0012
摘要： A power amplifier having a phase shift and impedance transformation element is disclosed. The power amplifier comprises a plurality of amplification paths, a first phase shift element at an input of each amplification path and a second phase shift element at an output of each amplification path. The amplifier also comprises an impedance transformation element associated with the second phase shift element and a power combiner configured to combine an output of each amplification path into a single output.
摘要翻译：公开了一种具有相移和阻抗变换元件的功率放大器。功率放大器包括多个放大路径，每个放大路径的输入处的第一相移元件和每个放大路径的输出处的第二相移元件。放大器还包括与第二相移元件相关联的阻抗变换元件和被配置为将每个放大路径的输出组合成单个输出的功率合成器。

5. 发明授权

US06236071B1 Transistor having a novel layout and an emitter having more than one feed point 失效
标题翻译：具有新颖布局的晶体管和具有多于一个馈电点的发射极
公开(公告)号：US06236071B1
公开(公告)日：2001-05-22
申请号：US09126301
申请日：1998-07-30
申请人： Hugh J. Finlay
发明人： Hugh J. Finlay
IPC分类号： H01L310328
CPC分类号： H01L27/082 , H01L29/0692 , H01L29/7371
摘要： A transistor with a novel compact layout is provided. The transistor has an emitter layout having a track with a first feed point and a second feed point whereby current flows through both the first feed point and the second feed point. A base terminal, a collector terminal, and an emitter terminal are provided. When in operation, current flows from the collector terminal to the emitter terminal based on the amount of current provided to the base terminal. A sub-collector layer is formed on a substrate. A collector layer is formed on the sub-collector layer. A base pedestal is formed on the collector layer. A base contact for coupling to the base terminal and an emitter is formed on the base pedestal. An emitter contact for coupling to the emitter terminal is formed on the emitter. A collector terminal for coupling to the collector contact is deposited in a trench that is formed in the collector layer and the sub-collector layer.
摘要翻译：提供了具有新颖紧凑布局的晶体管。晶体管具有发射器布局，其具有带有第一馈电点和第二馈电点的轨道，从而电流流过第一馈电点和第二馈电点。提供基极端子，集电极端子和发射极端子。在工作时，电流根据提供给基座的电流量从集电极端子流向发射极端子。在基板上形成副集电极层。集电极层形成在子集电极层上。基底座形成在收集层上。在基座上形成用于耦合到基极端子和发射极的基极触点。用于耦合到发射极端子的发射极触点形成在发射极上。用于耦合到集电极触点的集电极端子沉积在形成在集电极层和副集电极层中的沟槽中。

6. 发明授权

US06627925B1 Transistor having a novel layout and an emitter having more than one feed point 有权
标题翻译：具有新颖布局的晶体管和具有多于一个馈电点的发射极
公开(公告)号：US06627925B1
公开(公告)日：2003-09-30
申请号：US09687381
申请日：2000-10-13
申请人： Hugh J. Finlay
发明人： Hugh J. Finlay
IPC分类号： H01L310328
CPC分类号： H01L27/082 , H01L29/0692 , H01L29/7371
摘要： A transistor with a novel compact layout is provided. The transistor has an emitter layout having a track with a first feed point and a second feed point whereby current flows through both the first feed point and the second feed point. A base terminal, a collector terminal, and an emitter terminal are provided. When in operation, current flows from the collector terminal to the emitter terminal based on the amount of current provided to the base terminal. A sub-collector layer is formed on a substrate. A collector layer is formed on the sub-collector layer. A base pedestal is formed on the collector layer. A base contact for coupling to the base terminal and an emitter is formed on the base pedestal. An emitter contact for coupling to the emitter terminal is formed on the emitter. A collector contact for coupling to the collector terminal is deposited in a trench that is formed in the collector layer and the sub-collector layer.
摘要翻译：提供了具有新颖紧凑布局的晶体管。晶体管具有发射器布局，其具有带有第一馈电点和第二馈电点的轨道，从而电流流过第一馈电点和第二馈电点。提供基极端子，集电极端子和发射极端子。在工作时，电流根据提供给基座的电流量从集电极端子流向发射极端子。在基板上形成副集电极层。集电极层形成在子集电极层上。基底座形成在收集层上。在基座上形成用于耦合到基极端子和发射极的基极触点。用于耦合到发射极端子的发射极触点形成在发射极上。用于耦合到集电极端子的集电极触点沉积在形成在集电极层和副集电极层中的沟槽中。

7. 发明授权

US06586782B1 Transistor layout having a heat dissipative emitter 有权
标题翻译：具有散热发射极的晶体管布局
公开(公告)号：US06586782B1
公开(公告)日：2003-07-01
申请号：US09861921
申请日：2001-05-21
申请人： Hugh J. Finlay
发明人： Hugh J. Finlay
IPC分类号： H01L310328
CPC分类号： H01L27/082 , H01L29/0692 , H01L29/7371
摘要： Various embodiments of a novel transistor layout having improved electrical and heat dissipation characteristics are disclosed. Several embodiments include various intrinsic components contoured to the shape of the emitter. The various intrinsic components may include a collector layer center portion, a collector contact, a base pedestal, and/or a base contact. Additional embodiments include improved heat dissipation within single transistors. Still further embodiments include improved heat dissipation across a plurality of transistors.
摘要翻译：公开了具有改进的电和散热特性的新型晶体管布局的各种实施例。几个实施例包括与发射器的形状成轮廓的各种本征分量。各种本征组件可以包括集电极层中心部分，集电极触点，基座和/或基部触点。另外的实施例包括单个晶体管内的改进的散热。另外的实施例包括跨越多个晶体管的改善的散热。

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