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1. 发明授权

US08358144B2 Method for manufacturing semiconductor device, semiconductor inspection device, and program including color imaging of metal silicide 有权
标题翻译：半导体装置的制造方法，半导体检查装置以及包含金属硅化物的彩色成像的程序
公开(公告)号：US08358144B2
公开(公告)日：2013-01-22
申请号：US12912879
申请日：2010-10-27
申请人： Hotaka Maruyama , Masumi Mitsubori , Kaoru Kato
发明人： Hotaka Maruyama , Masumi Mitsubori , Kaoru Kato
IPC分类号： H01L21/66 , H01L21/4763
CPC分类号： H01L27/127 , H01L21/28518 , H01L22/12 , H01L27/1214 , H01L29/458
摘要： A manufacturing method of a semiconductor device capable of efficiently inspecting whether a metal silicide layer is sufficiently formed is provided. The manufacturing method is provided with the steps of forming a metal layer over a semiconductor layer containing silicon; forming a metal silicide layer over a surface of the semiconductor layer by heating the semiconductor layer and the metal layer; generating image data by performing color imaging of the metal silicide layer from above the metal silicide layer; calculating saturation of the metal silicide layer by processing the image data; and judging the formation amount of the metal silicide layer on the basis of the calculated saturation.
摘要翻译：提供能够有效地检查金属硅化物层是否充分形成的半导体器件的制造方法。该制造方法具有在包含硅的半导体层上形成金属层的步骤; 通过加热半导体层和金属层在半导体层的表面上形成金属硅化物层; 通过从金属硅化物层上方进行金属硅化物层的彩色成像来产生图像数据; 通过处理图像数据来计算金属硅化物层的饱和度; 并基于计算的饱和度来判断金属硅化物层的形成量。

2. 发明申请

US20110038528A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR INSPECTION DEVICE, AND PROGRAM 有权
标题翻译：制造半导体器件，半导体检测器件和程序的方法
公开(公告)号：US20110038528A1
公开(公告)日：2011-02-17
申请号：US12912879
申请日：2010-10-27
申请人： Hotaka Maruyama , Masumi Mitsubori , Kaoru Kato
发明人： Hotaka Maruyama , Masumi Mitsubori , Kaoru Kato
IPC分类号： G06K9/00
CPC分类号： H01L27/127 , H01L21/28518 , H01L22/12 , H01L27/1214 , H01L29/458
摘要： A manufacturing method of a semiconductor device capable of efficiently inspecting whether a metal silicide layer is sufficiently formed is provided. The manufacturing method is provided with the steps of forming a metal layer over a semiconductor layer containing silicon; forming a metal silicide layer over a surface of the semiconductor layer by heating the semiconductor layer and the metal layer; generating image data by performing color imaging of the metal silicide layer from above the metal silicide layer; calculating saturation of the metal silicide layer by processing the image data; and judging the formation amount of the metal silicide layer on the basis of the calculated saturation.
摘要翻译：提供能够有效地检查金属硅化物层是否充分形成的半导体器件的制造方法。该制造方法具有在包含硅的半导体层上形成金属层的步骤; 通过加热半导体层和金属层在半导体层的表面上形成金属硅化物层; 通过从金属硅化物层上方进行金属硅化物层的彩色成像来产生图像数据; 通过处理图像数据来计算金属硅化物层的饱和度; 并基于计算的饱和度来判断金属硅化物层的形成量。

3. 发明授权

US07842520B2 Method for manufacturing semiconductor device, semiconductor inspection device, and program including color imaging of metal silicide and calculations thereof 有权
标题翻译：用于制造半导体器件的方法，半导体检查器件和包括金属硅化物的彩色成像的程序及其计算
公开(公告)号：US07842520B2
公开(公告)日：2010-11-30
申请号：US11615724
申请日：2006-12-22
申请人： Hotaka Maruyama , Masumi Mitsubori , Kaoru Kato
发明人： Hotaka Maruyama , Masumi Mitsubori , Kaoru Kato
IPC分类号： H01L21/66 , H01L21/4763
CPC分类号： H01L27/127 , H01L21/28518 , H01L22/12 , H01L27/1214 , H01L29/458
摘要： A manufacturing method of a semiconductor device capable of efficiently inspecting whether a metal silicide layer is sufficiently formed is provided. The manufacturing method is provided with the steps of forming a metal layer over a semiconductor layer containing silicon; forming a metal silicide layer over a surface of the semiconductor layer by heating the semiconductor layer and the metal layer; generating image data by performing color imaging of the metal silicide layer from above the metal silicide layer; calculating saturation of the metal silicide layer by processing the image data; and judging the formation amount of the metal silicide layer on the basis of the calculated saturation.
摘要翻译：提供能够有效地检查金属硅化物层是否充分形成的半导体器件的制造方法。该制造方法具有在包含硅的半导体层上形成金属层的步骤; 通过加热半导体层和金属层在半导体层的表面上形成金属硅化物层; 通过从金属硅化物层上方进行金属硅化物层的彩色成像来产生图像数据; 通过处理图像数据来计算金属硅化物层的饱和度; 并基于计算的饱和度来判断金属硅化物层的形成量。

4. 发明申请

US20120080714A1 LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS 有权
标题翻译：发光装置，其制造方法和电子装置
公开(公告)号：US20120080714A1
公开(公告)日：2012-04-05
申请号：US13323886
申请日：2011-12-13
申请人： Hisao IKEDA , Takahiro Ibe , Junichi Koezuka , Kaoru Kato
发明人： Hisao IKEDA , Takahiro Ibe , Junichi Koezuka , Kaoru Kato
IPC分类号： H01L33/36
CPC分类号： H01L51/52 , H01L27/3283 , H01L51/002 , H01L51/5052 , H01L51/5088 , H01L51/5215 , H01L2251/5392 , H01L2251/558
摘要： The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects.
摘要翻译：本发明提供一种发光装置，其在基板上包括发光元件，发光元件通过分隔壁与相邻的发光元件隔开，所述发光元件包括第一电极，层形成在所述第一电极上方，形成在所述层上的发光层和形成在所述发光层上的第二电极，所述层包含无机化合物，有机化合物和卤素原子，所述隔壁包含所述无机化合物和有机化合物和层。发光装置提供更高的可靠性和更少的缺陷。

5. 发明授权

US08049206B2 Organic field effect transistor and semiconductor device 有权
标题翻译：有机场效应晶体管和半导体器件
公开(公告)号：US08049206B2
公开(公告)日：2011-11-01
申请号：US11657718
申请日：2007-01-25
申请人： Shinobu Furukawa , Ryota Imahayashi , Kaoru Kato
发明人： Shinobu Furukawa , Ryota Imahayashi , Kaoru Kato
IPC分类号： H01L51/30
CPC分类号： C07D209/88 , H01L51/0059 , H01L51/006 , H01L51/0061 , H01L51/0072 , H01L51/0508
摘要： It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.
摘要翻译：本发明的目的是提供一种包括能够降低导电层和半导体层之间的界面处的能量势垒的电极的有机场效应晶体管，以及包括该有机场效应晶体管的半导体器件。在有机场效应晶体管中的源电极和漏电极的至少一部分中设置含有有机化合物和无机化合物的复合层，作为有机化合物，可以使用通式（1）表示的咔唑衍生物）用来。通过在源电极和漏电极中的至少一部分中提供复合层，可以减少导电层和半导体层之间的界面处的能量势垒。

6. 发明申请

US20090001886A1 Light-emitting element, light-emitting device, electronic device, and method for fabricating light-emitting element 有权
标题翻译：发光元件，发光元件，电子元件及发光元件的制造方法
公开(公告)号：US20090001886A1
公开(公告)日：2009-01-01
申请号：US12213615
申请日：2008-06-23
申请人： Takahiro Ibe , Hisao Ikeda , Junichi Koezuka , Kaoru Kato
发明人： Takahiro Ibe , Hisao Ikeda , Junichi Koezuka , Kaoru Kato
IPC分类号： H01J1/62 , H01J9/24
CPC分类号： H01L51/5237 , H01L27/3244 , H01L51/0042 , H01L51/0052 , H01L51/0053 , H01L51/0054 , H01L51/0055 , H01L51/0056 , H01L51/0059 , H01L51/006 , H01L51/0071 , H01L51/0085 , H01L51/0089 , H01L51/524 , H01L51/5253
摘要： Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A light-emitting element having an EL layer between a pair of electrodes is covered with a layer containing an inorganic compound and halogen atoms or a layer containing an organic compound, an inorganic compound, and halogen atoms, whereby deterioration by moisture penetration can be inhibited. Thus, a light-emitting element with a long life can be obtained.
摘要翻译：本发明的目的是提供一种不容易劣化的发光元件，不容易劣化的发光器件和电子器件，以及不易于劣化的制造发光元件的方法。在一对电极之间具有EL层的发光元件被含有无机化合物和卤素原子的层或含有有机化合物，无机化合物和卤素原子的层覆盖，由此可以抑制通过水分渗透的劣化。因此，可以获得具有长寿命的发光元件。

7. 发明申请

US20080185957A1 Light Emitting Element, Light Emitting Device and Electric Appliance Using the Same 有权
标题翻译：发光元件，发光元件及使用其的电器
公开(公告)号：US20080185957A1
公开(公告)日：2008-08-07
申请号：US11886384
申请日：2006-03-17
申请人： Kaoru Kato , Shunpei Yamazaki
发明人： Kaoru Kato , Shunpei Yamazaki
IPC分类号： H01J1/62
CPC分类号： H01L51/5048
摘要： It is an object of the present invention to provide a light emitting element with low drive voltage. In addition, it is another object to provide a light emitting device having the light emitting element. Further in addition, it is another object to provide an electric appliance which has a light emitting element with low drive voltage. A light emitting element of the present invention comprises a pair of electrodes, a layer containing a light emitting element and a layer containing a mixture material which contains a conductive material formed from an inorganic compound and an insulating material formed from an inorganic compound, which are interposed between the pair of electrodes, wherein the layer containing the mixture material has a resistivity of 50,000 to 1,000,000 ohm cm, preferably, 200,000 to 500,000 ohm cm. The drive voltage of the light emitting element can be lowered with the foregoing structure.
摘要翻译：本发明的目的是提供一种具有低驱动电压的发光元件。另外，另一个目的是提供一种具有发光元件的发光器件。此外，另一目的是提供一种具有低驱动电压的发光元件的电器。本发明的发光元件包括一对电极，包含发光元件的层和含有由无机化合物形成的导电材料和由无机化合物形成的绝缘材料的混合材料的层，它们是插入在该对电极之间，其中含有混合材料的层的电阻率为50,000至1,000,000欧姆厘米，优选为20万至50万欧姆厘米。通过上述结构，能够降低发光元件的驱动电压。

8. 发明申请

US20080099757A1 Organic field effect transistor and semiconductor device 有权
标题翻译：有机场效应晶体管和半导体器件
公开(公告)号：US20080099757A1
公开(公告)日：2008-05-01
申请号：US11657718
申请日：2007-01-25
申请人： Shinobu Furukawa , Ryota Imahayashi , Kaoru Kato
发明人： Shinobu Furukawa , Ryota Imahayashi , Kaoru Kato
IPC分类号： H01L29/08 , H01L29/76 , H01L35/24 , H01L51/00
CPC分类号： C07D209/88 , H01L51/0059 , H01L51/006 , H01L51/0061 , H01L51/0072 , H01L51/0508
摘要： It is an object to provide an organic field effect transistor including an electrode which can reduce an energy barrier at an interface between a conductive layer and a semiconductor layer, and a semiconductor device including the organic field effect transistor. A composite layer containing an organic compound and an inorganic compound is provided in at least part of one of a source electrode and a drain electrode in an organic field effect transistor, and as the organic compound, a carbazole derivative represented by the general formula (1) is used. By providing the composite layer in at least part of one of the source electrode and the drain electrode, an energy barrier at an interface between a conductive layer and a semiconductor layer can be reduced.
摘要翻译：本发明的目的是提供一种包括能够降低导电层和半导体层之间的界面处的能量势垒的电极的有机场效应晶体管，以及包括该有机场效应晶体管的半导体器件。在有机场效应晶体管中的源电极和漏电极的至少一部分中设置含有有机化合物和无机化合物的复合层，作为有机化合物，可以使用通式（1）表示的咔唑衍生物）用来。通过在源电极和漏电极中的至少一部分中提供复合层，可以减少导电层和半导体层之间的界面处的能量势垒。

9. 发明授权

US08476827B2 Light emitting element, light emitting device and electric appliance using the same 有权
标题翻译：发光元件，发光元件及使用其的电器
公开(公告)号：US08476827B2
公开(公告)日：2013-07-02
申请号：US13294458
申请日：2011-11-11
申请人： Kaoru Kato , Shunpei Yamazaki
发明人： Kaoru Kato , Shunpei Yamazaki
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L51/5048
摘要： It is an object of the present invention to provide a light emitting element with low drive voltage. In addition, it is another object to provide a light emitting device having the light emitting element. Further in addition, it is another object to provide an electric appliance which has a light emitting element with low drive voltage. A light emitting element of the present invention comprises a pair of electrodes, a layer containing a light emitting element and a layer containing a mixture material which contains a conductive material formed from an inorganic compound and an insulating material formed from an inorganic compound, which are interposed between the pair of electrodes, wherein the layer containing the mixture material has a resistivity of 50,000 to 1,000,000 ohm cm, preferably, 200,000 to 500,000 ohm cm. The drive voltage of the light emitting element can be lowered with the foregoing structure.
摘要翻译：本发明的目的是提供一种具有低驱动电压的发光元件。另外，另一个目的是提供一种具有发光元件的发光器件。此外，另一目的是提供一种具有低驱动电压的发光元件的电器。本发明的发光元件包括一对电极，包含发光元件的层和含有由无机化合物形成的导电材料和由无机化合物形成的绝缘材料的混合材料的层，它们是插入在该对电极之间，其中含有混合材料的层的电阻率为50,000至1,000,000欧姆厘米，优选为20万至50万欧姆厘米。通过上述结构，能够降低发光元件的驱动电压。

10. 发明申请

US20120125853A1 Method for Collecting Metal 有权
标题翻译：收集金属的方法
公开(公告)号：US20120125853A1
公开(公告)日：2012-05-24
申请号：US13365386
申请日：2012-02-03
申请人： Ryoji Nomura , Satoshi Seo , Hideko Inoue , Kaoru Kato
发明人： Ryoji Nomura , Satoshi Seo , Hideko Inoue , Kaoru Kato
IPC分类号： B01D15/08
CPC分类号： C22B7/006 , C22B3/10 , C22B11/042 , C22B61/00 , H01L51/56 , Y02P10/214 , Y02P10/234
摘要： It is an object of the present invention to collect a scarce metal such as iridium from a light-emitting element which is no longer used. A method for collecting a metal is provided in which an organic metal compound which can emit visible light from a triplet excited state at room temperature is heated, or an EL layer of a light-emitting layer containing an organic metal compound which can emit visible light from a triplet excited state at room temperature is dissolved in a solvent to form a solution, and the solution is heated, irradiated with microwaves or treated with acid water. According to the above method, resources of metals such as iridium or platinum, which are scarce metals, can be utilized efficiently.
摘要翻译：本发明的目的是从不再使用的发光元件中收集诸如铱的稀缺金属。提供了一种用于收集金属的方法，其中可以在室温下从三重激发态发出可见光的有机金属化合物被加热，或者含有可发射可见光的有机金属化合物的发光层的EL层从室温下的三重激发态溶解在溶剂中形成溶液，将溶液加热，用微波照射或用酸水处理。根据上述方法，可以有效地利用作为稀有金属的诸如铱或铂的金属的资源。

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