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    • 2. 发明授权
    • Semiconductor device and manufacturing method thereof
    • 半导体装置及其制造方法
    • US08664036B2
    • 2014-03-04
    • US12968331
    • 2010-12-15
    • Shunpei YamazakiHotaka MaruyamaYoshiaki OikawaKatsuaki Tochibayashi
    • Shunpei YamazakiHotaka MaruyamaYoshiaki OikawaKatsuaki Tochibayashi
    • H01L21/00
    • H01L27/1225H01L21/02472H01L21/02483H01L21/02554H01L21/02565H01L21/02631H01L21/02667H01L21/28185H01L27/1229H01L29/045H01L29/66969H01L29/7869
    • An oxide semiconductor layer with excellent crystallinity is formed to enable manufacture of transistors with excellent electrical characteristics for practical application of a large display device, a high-performance semiconductor device, etc. By first heat treatment, a first oxide semiconductor layer is crystallized. A second oxide semiconductor layer is formed over the first oxide semiconductor layer. By second heat treatment, an oxide semiconductor layer including a crystal region having the c-axis oriented substantially perpendicular to a surface is efficiently formed and oxygen vacancies are efficiently filled. An oxide insulating layer is formed over and in contact with the oxide semiconductor layer. By third heat treatment, oxygen is supplied again to the oxide semiconductor layer. A nitride insulating layer containing hydrogen is formed over the oxide insulating layer. By fourth heat treatment, hydrogen is supplied at least to an interface between the second oxide semiconductor layer and the oxide insulating layer.
    • 形成具有优异结晶度的氧化物半导体层,以便能够制造具有优异电特性的晶体管,用于实际应用大型显示装置,高性能半导体器件等。通过第一热处理,第一氧化物半导体层结晶。 在第一氧化物半导体层上形成第二氧化物半导体层。 通过第二热处理,有效地形成包括具有取向为基本上垂直于表面的c轴的晶体区域的氧化物半导体层,并且有效地填充氧空位。 氧化物绝缘层形成在氧化物半导体层上并与氧化物半导体层接触。 通过第三次热处理,再次向氧化物半导体层供给氧。 在氧化物绝缘层上形成含有氢的氮化物绝缘层。 通过第四热处理,至少向第二氧化物半导体层和氧化物绝缘层之间的界面供应氢。