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    • 3. 发明授权
    • Light-emitting device, electronic device, and manufacturing method of light-emitting device
    • 发光装置,电子装置以及发光装置的制造方法
    • US07838874B2
    • 2010-11-23
    • US12213094
    • 2008-06-13
    • Takahiro IbeHisao IkedaJunichi KoezukaKaoru Kato
    • Takahiro IbeHisao IkedaJunichi KoezukaKaoru Kato
    • H01L51/54
    • H01L51/5284H01L51/5052
    • The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.
    • 本发明提供一种具有高对比度的发光元件和发光装置,具体地说,提供了不是通过使用偏光板而是使用常规电极材料来提高对比度的发光装置。 通过设置非光发射电极和发光层之间的光吸收层来抑制外部光的反射。 作为光吸收层,使用通过在包含有机化合物和金属氧化物的层中添加卤素原子得到的层。 此外,在形成有用于驱动发光元件的薄膜晶体管,形成布线的区域等的区域上也形成光吸收层,从而从侧面提取光 与形成TFT的区域相反,从而减少外部光的反射。
    • 4. 发明授权
    • Memory device and semiconductor device
    • 存储器件和半导体器件
    • US07875881B2
    • 2011-01-25
    • US12054914
    • 2008-03-25
    • Hisao IkedaTakahiro IbeJunichi KoezukaKaoru Kato
    • Hisao IkedaTakahiro IbeJunichi KoezukaKaoru Kato
    • H01L29/08
    • H01L27/286H01L27/112H01L27/115Y10S428/917Y10T428/24942
    • Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer.
    • 目的是解决对存储元件的小型化的抑制和其制造过程的复杂性,并且提供一种非易失性存储器件和半导体器件,每个非易失性存储器件和半导体器件具有存储器件,其中可以额外地写入数据,除了在制造时, 可以防止由数据重写引起的伪造等,以及便宜且非易失性的存储器件和半导体器件。 本发明提供了一种半导体器件,其包括多个存储元件,每个存储元件分别具有第一导电层,位于第一导电层旁边的第二导电层和设置在同一绝缘膜上的混合膜。 混合膜包含无机化合物,有机化合物和卤素原子,并且设置在第一导电层和第二导电层之间。
    • 5. 发明申请
    • Light-emitting device, electronic device, and manufacturing method of light-emitting device
    • 发光装置,电子装置以及发光装置的制造方法
    • US20080308794A1
    • 2008-12-18
    • US12213094
    • 2008-06-13
    • Takahiro IbeHisao IkedaJunichi KoezukaKaoru Kato
    • Takahiro IbeHisao IkedaJunichi KoezukaKaoru Kato
    • H01L35/24H01L51/40
    • H01L51/5284H01L51/5052
    • The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.
    • 本发明提供一种具有高对比度的发光元件和发光装置,具体地说,提供了不是通过使用偏光板而是使用常规电极材料来提高对比度的发光装置。 通过设置非光发射电极和发光层之间的光吸收层来抑制外部光的反射。 作为光吸收层,使用通过在包含有机化合物和金属氧化物的层中添加卤素原子得到的层。 此外,在形成有用于驱动发光元件的薄膜晶体管,形成布线的区域等的区域上也形成光吸收层,从而从侧面提取光 与形成TFT的区域相反,从而减少外部光的反射。
    • 7. 发明授权
    • Light-emitting device and electronic device
    • 发光装置和电子装置
    • US08319212B2
    • 2012-11-27
    • US12948198
    • 2010-11-17
    • Takahiro IbeHisao IkedaJunichi KoezukaKaoru Kato
    • Takahiro IbeHisao IkedaJunichi KoezukaKaoru Kato
    • H01L51/54
    • H01L51/5284H01L51/5052
    • The present invention provides a light-emitting element and a light-emitting device which have high contrast, and specifically, provides a light-emitting device whose contrast is enhanced, not by using a polarizing plate but using a conventional electrode material. Reflection of external light is suppressed by provision of a light-absorbing layer included between a non-light-transmitting electrode and a light-emitting layer. As the light-absorbing layer, a layer is used, which is obtained by adding a halogen atom into a layer including an organic compound and a metal oxide. Further, the light-absorbing layer is formed also over a region in which a thin film transistor for driving a light-emitting element is formed, a region in which a wiring is formed, and the like, and thus light is extracted from the side opposite to the region in which the TFT is formed, thereby reducing reflection of external light.
    • 本发明提供一种具有高对比度的发光元件和发光装置,具体地说,提供了不是通过使用偏光板而是使用常规电极材料来提高对比度的发光装置。 通过设置非光发射电极和发光层之间的光吸收层来抑制外部光的反射。 作为光吸收层,使用通过在包含有机化合物和金属氧化物的层中添加卤素原子得到的层。 此外,在形成有用于驱动发光元件的薄膜晶体管,形成布线的区域等的区域上也形成光吸收层,从而从侧面提取光 与形成TFT的区域相反,从而减少外部光的反射。
    • 8. 发明授权
    • Method for manufacturing memory device
    • 制造存储器件的方法
    • US08187917B2
    • 2012-05-29
    • US13008148
    • 2011-01-18
    • Hisao IkedaTakahiro IbeJunichi KoezukaKaoru Kato
    • Hisao IkedaTakahiro IbeJunichi KoezukaKaoru Kato
    • H01L29/08
    • H01L27/286H01L27/112H01L27/115Y10S428/917Y10T428/24942
    • Objects are to solve inhibition of miniaturization of a memory element and complexity of a manufacturing process thereof, and to provide a nonvolatile memory device and a semiconductor device each having the memory device, in which data can be additionally written except at the time of manufacture and in which forgery or the like caused by rewriting of data can be prevented, and a memory device and a semiconductor device that are inexpensive and nonvolatile. The present invention provides a semiconductor device that includes a plurality of memory elements, in each of which a first conductive layer, a second conductive layer disposed beside the first conductive layer, and a mixed film that are disposed over the same insulating film. The mixed film contains an inorganic compound, an organic compound, and a halogen atom and is disposed between the first conductive layer and the second conductive layer.
    • 目的是解决对存储元件的小型化的抑制和其制造过程的复杂性,并且提供一种非易失性存储器件和半导体器件,每个非易失性存储器件和半导体器件具有存储器件,除了制造之外,可以另外写入数据, 其中可以防止由重写数据引起的伪造等,以及便宜且不挥发的存储器件和半导体器件。 本发明提供了一种半导体器件,其包括多个存储元件,每个存储元件分别具有第一导电层,位于第一导电层旁边的第二导电层和设置在同一绝缘膜上的混合膜。 混合膜包含无机化合物,有机化合物和卤素原子,并且设置在第一导电层和第二导电层之间。