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1. 发明申请

US20090123657A1 Process for Producing an Amorphous Carbon Film 失效
标题翻译：生产无定形碳膜的方法
公开(公告)号：US20090123657A1
公开(公告)日：2009-05-14
申请号：US11887704
申请日：2006-03-27
申请人： Hitotoshi Murase , Toshihisa Shimo , Shinfuku Nomura , Hiromichi Toyota , Hiroshi Yamashita , Makoto Kuramoto
发明人： Hitotoshi Murase , Toshihisa Shimo , Shinfuku Nomura , Hiromichi Toyota , Hiroshi Yamashita , Makoto Kuramoto
IPC分类号： B05D1/00
CPC分类号： C23C16/26 , B01J19/088 , B01J2219/0809 , B01J2219/083 , B01J2219/0877 , H05H1/46 , H05H1/48 , H05H2001/466
摘要： The process for producing an amorphous carbon film of the present invention is a process for producing an amorphous carbon film comprising contacting a surface of a substrate S with bubbles B which have been formed in a liquid L containing an organic compound and inside which plasma has been generated, so as to form an amorphous carbon film on the surface of the substrate S, and the liquid L contains one or more selected from phenols and alcohols having a carbon number of from 1 to 12. According to the present invention, a hard amorphous carbon film can be formed easily.
摘要翻译：本发明的无定形碳膜的制造方法是使非晶质碳膜的制造方法，其特征在于，使基材S的表面与形成于含有有机化合物的液体L中形成的气泡B接触，产生，以在基材S的表面上形成无定形碳膜，液体L含有选自碳数为1至12的酚和醇的一种或多种。根据本发明，硬的无定形可以容易地形成碳膜。

2. 发明授权

US08541068B2 Process for producing an amorphous carbon film 失效
标题翻译：无定形碳膜的制造方法
公开(公告)号：US08541068B2
公开(公告)日：2013-09-24
申请号：US11887704
申请日：2006-03-27
申请人： Hitotoshi Murase , Toshihisa Shimo , Shinfuku Nomura , Hiromichi Toyota , Hiroshi Yamashita , Makoto Kuramoto
发明人： Hitotoshi Murase , Toshihisa Shimo , Shinfuku Nomura , Hiromichi Toyota , Hiroshi Yamashita , Makoto Kuramoto
IPC分类号： H05H1/24 , C23C16/00 , B05D1/18
CPC分类号： C23C16/26 , B01J19/088 , B01J2219/0809 , B01J2219/083 , B01J2219/0877 , H05H1/46 , H05H1/48 , H05H2001/466
摘要： The process for producing an amorphous carbon film of the present invention is a process for producing an amorphous carbon film comprising contacting a surface of a substrate S with bubbles B which have been formed in a liquid L containing an organic compound and inside which plasma has been generated, so as to form an amorphous carbon film on the surface of the substrate S, and the liquid L contains one or more selected from phenols and alcohols having a carbon number of from 1 to 12. According to the present invention, a hard amorphous carbon film can be formed easily.
摘要翻译：本发明的无定形碳膜的制造方法是使非晶质碳膜的制造方法，其特征在于，使基材S的表面与形成于含有有机化合物的液体L中形成的气泡B接触，产生，以在基材S的表面上形成无定形碳膜，液体L含有选自碳数为1至12的酚和醇的一种或多种。根据本发明，硬的无定形可以容易地形成碳膜。

3. 发明授权

US06228167B1 Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US06228167B1
公开(公告)日：2001-05-08
申请号：US09297678
申请日：1999-05-09
申请人： Makoto Kuramoto , Tetsuhiro Iida
发明人： Makoto Kuramoto , Tetsuhiro Iida
IPC分类号： C30B1500
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1032 , Y10T117/1072
摘要： In the apparatus according to the present invention, self-weight of a single crystal is moved in soft manner when the single crystal being pulled up is gripped by grippers, and driving of pulling operation after self-weight movement is performed by a single driving source, and it is aimed to prevent contamination and dislocation of the single crystal by arranging all driving units outside a vacuum chamber for storing the single crystal. There is provided a support member 70 for supporting a portion with larger diameter 5 under a seed crystal 3, and the support member 70 is provided with a through-hole, which is communicated with outer peripheral portion via a slit 74, and it can be rotated in horizontal direction between a non-holding position and a holding position by the motor 40. Position of the support member 70 is controlled in vertical direction with respect to the seed crystal holder 2, and when it is out of vertical position control operation, the support member 70 is integrally moved with the seed crystal holder 2 in vertical direction by transmitting motive power of the seed crystal pulling means 20, and the driving sources are arranged outside the vacuum chamber for storing single crystal.
摘要翻译：在根据本发明的装置中，当被提起的单晶被夹持器夹持时，单晶的自重以柔和的方式移动，并且通过单个驱动源执行自重移动之后的拉动操作的驱动并且旨在通过将所有驱动单元布置在用于存储单晶的真空室外部来防止单晶的污染和位错。设置有用于在籽晶3下支撑具有较大直径5的部分的支撑构件70，并且支撑构件70设置有通过狭缝74与外周部分连通的通孔，并且其可以是通过电动机40在非保持位置和保持位置之间在水平方向上旋转。支撑构件70的位置相对于晶种保持器2在垂直方向上被控制，并且当其处于垂直位置控制操作时，支撑构件70通过发射晶种牵引装置20的动力而沿着垂直方向与籽晶保持器2整体移动，并且驱动源布置在用于存储单晶的真空室的外侧。

4. 发明授权

US6022411A Single crystal pulling apparatus 失效
标题翻译：单晶拉丝机
公开(公告)号：US6022411A
公开(公告)日：2000-02-08
申请号：US37513
申请日：1998-03-10
申请人： Makoto Kuramoto
发明人： Makoto Kuramoto
IPC分类号： C30B15/30 , C30B35/00
CPC分类号： C30B15/30 , Y10S117/911 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076
摘要： The object of the present invention is to prevent the single crystal during pulling operation from turning to polycrystal when the single crystal under pulling operation is gripped by a gripper and to achieve the gripping automatically. When a wire 1 is moved down to immerse a seed crystal 3 into surface of a Si melt 11 in a quartz crucible 10, arms 12 and 13 wait at such positions that tips do not come into contact with the Si melt 11, and tips of the gripping arm 12 are opened so that the tips are not brought into contact with a portion with larger diameter 5 during pulling operation. By pulling up the wire 1, a neck portion 4, a portion with larger diameter 5, a constricted portion 6, and a crystal main portion 7 are formed under the seed crystal 3. When a sensor 14 detects that upper surface of the portion with larger diameter 5 has come into contact with the tips of the contact/detecting arm 13 during pulling operation, tips of the gripping arm 12 are closed and grip the constricted portion 6. When gripping is completed, the wire 1 and the arms 12 and 13 are pulled up while integrally being rotated.
摘要翻译：本发明的目的在于，当拉伸操作中的单晶被夹持器夹持时，防止拉伸操作期间的单晶转向多晶，并自动实现夹持。当导线1向下移动以将晶种3浸入石英坩埚10中的Si熔体11的表面时，臂12和13等待尖端不与Si熔融物11接触的位置，并且尖端夹紧臂12打开，使得尖端在拉动操作期间不与具有较大直径的部分5接触。通过拉起导线1，在晶种3的下面形成有颈部4，直径大的部分5，缩颈部分6和晶体主体部分7。当传感器14检测到部分的上表面在拉动操作期间，较大的直径5已经与接触/检测臂13的尖端接触，把持臂12的尖端被关闭并且夹紧收缩部分6.当夹紧完成时，线1和臂12和13 在整体旋转的同时被拉起。

5. 发明授权

US5041308A Method of coating silicon particles 失效
标题翻译：涂覆硅颗粒的方法
公开(公告)号：US5041308A
公开(公告)日：1991-08-20
申请号：US449776
申请日：1989-12-13
申请人： Makoto Kuramoto
发明人： Makoto Kuramoto
IPC分类号： B01J8/18 , B01J19/00 , B01J19/02 , C01B33/027 , C01B33/029 , C01B33/03
CPC分类号： C01B33/03 , B01J19/002 , B01J19/02 , B01J8/1836 , C01B33/027 , C01B33/029 , B01J2208/00044 , B01J2208/00407 , B01J2219/0204 , B01J2219/0272
摘要： An apparatus for heating polycrystalline silicon, in which polycrystalline silicon of semiconductor grade placed in the reaction vessel is directly heated by means of a heater outside of the reaction vessel where the inner surface of the reaction vessel is formed of graphite coated with highly pure silicon and having a thickness of 100 microns or more.
摘要翻译：一种用于加热多晶硅的装置，其中放置在反应容器中的半导体级的多晶硅通过反应容器外部的加热器直接加热，反应容器的内表面由涂覆有高纯硅的石墨形成，具有100微米或更大的厚度。

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