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1. 发明授权

US09353458B2 Base substrate for epitaxial diamond film, method for producing the base substrate for epitaxial diamond film, epitaxial diamond film produced with the base substrate for epitaxial diamond film, and method for producing the epitaxial diamond film 有权
标题翻译：用于外延金刚石膜的基底，用于制造用于外延金刚石膜的基底的方法，用该外延金刚石膜制备的外延金刚石膜，以及用于制造外延金刚石膜的方法
公开(公告)号：US09353458B2
公开(公告)日：2016-05-31
申请号：US12225570
申请日：2007-02-05
申请人： Atsuhito Sawabe , Hitoshi Noguchi , Shintaro Maeda
发明人： Atsuhito Sawabe , Hitoshi Noguchi , Shintaro Maeda
IPC分类号： C30B23/02 , C30B25/10 , C30B25/18 , C30B29/02 , C30B29/04 , H01L21/02 , C23C16/27 , H01J37/32 , H01J37/34
CPC分类号： C30B23/02 , C23C16/272 , C30B25/105 , C30B25/18 , C30B29/02 , C30B29/04 , H01J37/32009 , H01J37/34 , H01J37/3447 , H01L21/0242 , H01L21/02433 , H01L21/02491 , H01L21/02516 , H01L21/02527 , H01L21/0262
摘要： The present invention provides a base substrate for epitaxial diamond film capable of epitaxially growing a large area of high quality diamond, having a diameter of 1 inch (2.5 cm) or more, on an iridium base by using the CVD method, a method for producing the base substrate for epitaxial diamond film, an epitaxial diamond film produced with the base substrate for epitaxial diamond film and a method for producing the epitaxial diamond film. An iridium (Ir) film is formed by epitaxial growth on a single crystal magnesium oxide (MgO) substrate or a single crystal sapphire (α-Al2O3) substrate by means of a vacuum deposition method or a sputtering method, and a bias nucleus generation process of forming epitaxial diamond nuclei is applied to the surface of the iridium (Ir) base formed as a film by exposing an ion-containing direct current plasma to the surface of the iridium (Ir) base formed as a film.
摘要翻译：本发明提供一种用于外延金刚石膜的基底，其能够通过使用CVD法在铱基上外延生长具有1英寸（2.5cm）或更大直径的大面积的高品质金刚石，用于外延金刚石膜的基底衬底，用外延金刚石膜制成的外延金刚石膜和用于制造外延金刚石膜的方法。通过真空沉积法或溅射法在单晶氧化镁（MgO）衬底或单晶蓝宝石（α-Al 2 O 3）衬底上外延生长形成铱（Ir）膜，并且偏置核生成工艺通过将含离子的直流等离子体暴露于形成为膜的铱（Ir）基底的表面，将形成外延金刚石核的形成的铱（Ir）基底的表面施加于膜。

2. 发明授权

US07514146B2 Multilayer substrate, method for producing a multilayer substrate, and device 有权
标题翻译：多层基板，多层基板的制造方法以及装置
公开(公告)号：US07514146B2
公开(公告)日：2009-04-07
申请号：US11368617
申请日：2006-03-07
申请人： Hitoshi Noguchi , Atsuhito Sawabe
发明人： Hitoshi Noguchi , Atsuhito Sawabe
IPC分类号： C30B29/04
CPC分类号： C30B29/16 , C30B25/105 , C30B29/04 , H01L21/0242 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L21/02631 , Y10T428/30 , Y10T428/31678
摘要： There is provided a multilayer substrate comprising, at least, a single crystal MgO substrate, an iridium (Ir) film heteroepitaxially grown on the MgO substrate, a diamond film vapor-deposited on the Ir film, wherein crystallinity of the Ir film is that a full width at half maximum (FWHM) of a diffracted intensity peak in 2 θ=46.5° or 2θ=47.3° attributed to Ir (200) analyzed by X-ray diffraction method with a wavelength of λ=1.54 Å is 0.40° or less. Thereby, there is provided a multilayer substrate that is delamination-proof at the respective interfaces between the MgO substrate and the Ir film and between the Ir film and the diamond film, and, particularly, that has a single crystal diamond film of a large area as a continuous film.
摘要翻译：提供了至少包括单晶MgO基板，在MgO基板上异质外延生长的铱（Ir）膜的多层基板，在Ir膜上气相沉积的金刚石膜，其中Ir膜的结晶度为归因于通过λ=1.54的X射线衍射法分析的Ir（200）的2θ= 46.5°或2θ= 47.3°的衍射强度峰的半峰全宽（FWHM）为0.40°以下。由此，提供了在MgO基板和Ir膜之间以及Ir膜和金刚石膜之间的界面处具有防分层性的多层基板，特别是具有大面积的单晶金刚石膜作为连续片。

3. 发明授权

US07628856B2 Method for producing substrate for single crystal diamond growth 有权
标题翻译：单晶金刚石生长用基板的制造方法
公开(公告)号：US07628856B2
公开(公告)日：2009-12-08
申请号：US11713036
申请日：2007-03-02
申请人： Atsuhito Sawabe , Hitoshi Noguchi , Shintaro Maeda
发明人： Atsuhito Sawabe , Hitoshi Noguchi , Shintaro Maeda
IPC分类号： C30B29/02
CPC分类号： C30B25/18 , C30B29/04 , H01L21/0242 , H01L21/02425 , H01L21/02433 , H01L21/02444 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L21/02658
摘要： There is disclosed a method for producing a substrate for single crystal diamond growth, comprising at least a step of preliminarily subjecting a substrate before single crystal diamond growth to a bias treatment for forming a diamond nucleus thereon by a direct-current discharge in which an electrode in a substrate side is a cathode, and wherein in the treatment, at least, a temperature of the substrate from 40 sec after an initiation of the bias treatment to an end of the bias treatment is held in a range of 800° C.±60° C. There can be provided a method for producing a substrate for single crystal diamond growth, by which a single crystal diamond can be grown more certainly.
摘要翻译：公开了一种用于制造单晶金刚石生长用基板的方法，至少包括在单晶金刚石生长之前对基板进行预定处理以在其上形成金刚石核的偏压处理的步骤，其中直流放电是通过直流放电在基板侧是阴极，并且其中在处理中，至少在偏置处理开始之后40秒至偏置处理结束之后，基板的温度保持在800℃的范围内可以提供一种用于生产用于单晶金刚石生长的基底的方法，通过该方法可以更确定地生长单晶金刚石。

4. 发明申请

US20060203346A1 Multilayer substrate, method for producing a multilayer substrate, and device 有权
公开(公告)号：US20060203346A1
公开(公告)日：2006-09-14
申请号：US11368617
申请日：2006-03-07
申请人： Hitoshi Noguchi , Atsuhito Sawabe
发明人： Hitoshi Noguchi , Atsuhito Sawabe
IPC分类号： G02B1/10
CPC分类号： C30B29/16 , C30B25/105 , C30B29/04 , H01L21/0242 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L21/02631 , Y10T428/30 , Y10T428/31678
摘要： There is provided a multilayer substrate comprising, at least, a single crystal MgO substrate, an iridium (Ir) film heteroepitaxially grown on the MgO substrate, a diamond film vapor-deposited on the Ir film, wherein crystallinity of the Ir film is that a full width at half maximum (FWHM) of a diffracted intensity peak in 2 θ=46.5° or 2θ=47.3° attributed to Ir (200) analyzed by X-ray diffraction method with a wavelength of λ=1.54 Å is 0.40° or less. Thereby, there is provided a multilayer substrate that is delamination-proof at the respective interfaces between the MgO substrate and the Ir film and between the Ir film and the diamond film, and, particularly, that has a single crystal diamond film of a large area as a continuous film.

5. 发明授权

US09127375B2 Base material for forming single crystal diamond film and method for producing single crystal diamond using the same 有权
标题翻译：用于形成单晶金刚石膜的基材和使用其制造单晶金刚石的方法
公开(公告)号：US09127375B2
公开(公告)日：2015-09-08
申请号：US12591539
申请日：2009-11-23
申请人： Hitoshi Noguchi
发明人： Hitoshi Noguchi
IPC分类号： C30B29/04 , C30B25/18
CPC分类号： C30B25/18 , C30B29/04 , Y10T117/10
摘要： The present invention is a base material for forming a single crystal diamond comprising, at least, a seed base material of a single crystal and a thin film heteroepitaxially grown on the seed base material, wherein the seed base material is a single crystal diamond and the thin film is Iridium film or Rhodium film. As a result, there is provided a base material for forming a single crystal diamond that enables a single crystal diamond having a high crystallinity to be heteroepitaxially grown thereon and that can be reused repeatedly and a method for producing a single crystal diamond that enables a single crystal diamond having a high crystallinity and a large area to be produced at low cost.
摘要翻译：本发明是用于形成单晶金刚石的基材，其至少包括单晶晶种基材和在种子基材上异质外延生长的薄膜，其中种子基材为单晶金刚石，薄膜是铱膜或铑膜。结果，提供了一种用于形成单晶金刚石的基材，其使得能够使具有高结晶度的单晶金刚石在其上异质外延生长并且可以重复使用，并且可以制造单晶金刚石的方法，具有高结晶度和大面积的水晶钻石以低成本生产。

6. 发明授权

US09076653B2 Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrate 有权
标题翻译：用于生长单晶金刚石层的基板和用于生产单晶金刚石基底的方法
公开(公告)号：US09076653B2
公开(公告)日：2015-07-07
申请号：US12662616
申请日：2010-04-26
申请人： Hitoshi Noguchi
发明人： Hitoshi Noguchi
IPC分类号： C30B25/02 , H01L21/205 , H01L21/02 , H01L29/06 , C30B25/18 , C30B25/20 , C30B29/02 , C30B29/04 , C30B33/06
CPC分类号： H01L21/02527 , C30B25/02 , C30B25/186 , C30B25/20 , C30B29/02 , C30B29/04 , C30B33/06 , H01L21/02021 , H01L21/02376 , H01L21/02491 , H01L21/02664 , H01L29/0657 , Y10T428/219 , Y10T428/24488
摘要： The present invention is a substrate for growing a single crystal diamond layer including: at least, a base material made of a single crystal diamond, and an iridium film or a rhodium film heteroepitaxially grown on a side of the base material where the single crystal diamond layer is to be grown; wherein a peripheral end portion of a surface of the base material on the side where the single crystal diamond layer is to be grown is chamfered with a curvature radius (r), the curvature radius satisfying (r)≧50 μm. As a result, there is provided a substrate for growing a single crystal diamond layer and a method for producing a single crystal diamond substrate, the substrate and the method in which a single crystal diamond having uniform and high crystallinity can be reproducibly produced at low cost.
摘要翻译：本发明是用于生长单晶金刚石层的基板，包括：至少由单晶金刚石制成的基材，以及异质外延生长在基材侧的铱膜或铑膜，其中单晶金刚石层要生长; 其中，要生长单晶金刚石层一侧的基材的表面的外周端部以曲率半径（r）倒角，曲率半径满足（r）≥50μm。结果，提供了用于生长单晶金刚石层的基板和用于制造单晶金刚石基板的方法，该基板和其中可以以低成本可再现地制造具有均匀和高结晶度的单晶金刚石的方法。

7. 发明申请

US20100294196A1 Substrate for growing single crystal diamond layer and method for producing single crystal diamond substrate 有权
标题翻译：用于生长单晶金刚石层的基板和用于生产单晶金刚石基底的方法
公开(公告)号：US20100294196A1
公开(公告)日：2010-11-25
申请号：US12662616
申请日：2010-04-26
申请人： Hitoshi Noguchi
发明人： Hitoshi Noguchi
IPC分类号： C30B25/20 , B32B3/02
CPC分类号： H01L21/02527 , C30B25/02 , C30B25/186 , C30B25/20 , C30B29/02 , C30B29/04 , C30B33/06 , H01L21/02021 , H01L21/02376 , H01L21/02491 , H01L21/02664 , H01L29/0657 , Y10T428/219 , Y10T428/24488
摘要： The present invention is a substrate for growing a single crystal diamond layer including: at least, a base material made of a single crystal diamond, and an iridium film or a rhodium film heteroepitaxially grown on a side of the base material where the single crystal diamond layer is to be grown; wherein a peripheral end portion of a surface of the base material on the side where the single crystal diamond layer is to be grown is chamfered with a curvature radius (r), the curvature radius satisfying (r)≧50 μm. As a result, there is provided a substrate for growing a single crystal diamond layer and a method for producing a single crystal diamond substrate, the substrate and the method in which a single crystal diamond having uniform and high crystallinity can be reproducibly produced at low cost.
摘要翻译：本发明是用于生长单晶金刚石层的基板，包括：至少由单晶金刚石制成的基材，以及异质外延生长在基材侧的铱膜或铑膜，其中单晶金刚石层要生长; 其中，要生长单晶金刚石层一侧的基材的表面的外周端部以曲率半径（r）倒角，曲率半径满足（r）≥50μm。结果，提供了用于生长单晶金刚石层的基板和用于制造单晶金刚石基板的方法，该基板和其中可以以低成本可再现地制造具有均匀和高结晶度的单晶金刚石的方法。

8. 发明申请

US20090098414A1 METHOD OF MANUFACTURING MAGNETIC RECORDING MEDIUM AND MAGNETIC RECORDING MEDIUM MANUFACTURED BY THE SAME 审中-公开
标题翻译：制造磁记录介质的方法和由其制造的磁记录介质
公开(公告)号：US20090098414A1
公开(公告)日：2009-04-16
申请号：US12240406
申请日：2008-09-29
申请人： Tadahiro OOISHI , Kazufumi Omura , Hitoshi Noguchi , Hiroaki Takano
发明人： Tadahiro OOISHI , Kazufumi Omura , Hitoshi Noguchi , Hiroaki Takano
IPC分类号： G11B5/706 , B05D5/00
CPC分类号： G11B5/7021 , G11B5/7013 , G11B5/714 , G11B5/842
摘要： The present invention relates to a method of manufacturing a magnetic recording medium wherein the magnetic layer coating liquid comprising a ferromagnetic powder having an average particle size of 10 to 40 nm and a moisture content of 0.3 to 3.0 weight percent; a binder (a) comprising 0.2 to 0.7 meq/g of at least one polar group selected from the group consisting of —SO3M, —OSO3M, —PO(OM)2, —OPO(OM)2, and COOM (M denotes a hydrogen atom or the like) and having a weight average molecular weight of 20,000 to 200,000, and/or (b) comprising 0.5 to 5 meq/g of at least one polar group selected from the group consisting of —CONR1R2, —NR1R2, and —NR+R1R2R3 (wherein R1, R2, and R3 each independently denote a hydrogen atom or the like) and having a weight average molecular weight of 20,000 to 200,000; and a compound comprising at least one carboxyl group and/or hydroxyl group per molecule.
摘要翻译：磁记录介质的制造方法技术领域本发明涉及一种制造磁记录介质的方法，其中所述磁性层涂布液含有平均粒度为10〜40nm，水分含量为0.3〜3.0重量％的铁磁性粉末; 包含0.2至0.7meq / g的至少一种选自-SO 3 M，-OSO 3 M，-PO（OM）2，-OPO（OM）2和COOM的极性基团的粘合剂（a）（M表示氢原子等），重均分子量为20,000〜200,000，和/或（b）含有0.5〜5meq / g的至少一种极性基团，选自-CONR1R2，-NR1R2和 -NR + R1R2R3（其中R1，R2和R3各自独立地表示氢原子等），重均分子量为20,000〜200,000; 和每分子含有至少一个羧基和/或羟基的化合物。

9. 发明申请

US20090027812A1 MAGNETIC SIGNAL REPRODUCTION SYSTEM AND MAGNETIC SIGNAL REPRODUCTION METHOD 审中-公开
标题翻译：磁信号再现系统和磁信号再现方法
公开(公告)号：US20090027812A1
公开(公告)日：2009-01-29
申请号：US12180580
申请日：2008-07-28
申请人： Hitoshi Noguchi , Yasushi Endo , Osamu Shimizu , Makoto Yoshida , Kazuhiko Maejima , Mitsuyoshi Kawai
发明人： Hitoshi Noguchi , Yasushi Endo , Osamu Shimizu , Makoto Yoshida , Kazuhiko Maejima , Mitsuyoshi Kawai
IPC分类号： G11B5/33
CPC分类号： G11B5/70 , G11B5/00826 , G11B5/29 , G11B5/3106 , G11B5/3906 , G11B5/70678 , G11B5/7085 , G11B5/71 , G11B5/714
摘要： The magnetic signal reproduction system comprises a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support and a reproduction head, wherein a number of protrusions equal to or greater than 10 nm in height on the magnetic layer surface, as measured by an atomic force microscope, ranges from 50 to 2500/10,000 μm2, a quantity of lubricant on the magnetic layer surface, denoted as a surface lubricant index, ranges from 0.5 to 5.0, a surface abrasive occupancy of the magnetic layer ranges from 2 to 20 percent, the reproduction head is a magnetoresistive magnetic head comprising a spin-valve layer, the spin-valve layer comprises a magnetization free layer, a magnetization pinned layer and an antiferromagnetic layer, and the antiferromagnetic layer is comprised of alloy comprising iridium and manganese, and the reproduction head comes in sliding contact with the magnetic recording medium during signal reproduction.
摘要翻译：磁信号再现系统包括磁记录介质，磁记录介质包括在非磁性载体上的铁磁性粉末和粘合剂的磁性层和再现磁头，其中在磁性层表面上高度等于或大于10nm的突起数目，通过原子力显微镜测量的范围为50至2500 / 10,000mum2，表面润滑指数表示为磁性层表面的润滑剂的数量为0.5至5.0，磁性层的表面磨料占据率为 2〜20％，再现头是包括自旋阀层的磁阻磁头，自旋阀层包括磁化自由层，磁化钉扎层和反铁磁层，反铁磁层由包含铱的合金和锰，并且再现头在信号再现期间与磁记录介质滑动接触。

10. 发明授权

US07070650B2 Diamond film and method for producing the same 有权
标题翻译：金刚石薄膜及其制造方法
公开(公告)号：US07070650B2
公开(公告)日：2006-07-04
申请号：US10421562
申请日：2003-04-23
申请人： Hitoshi Noguchi , Yoshihiro Kubota
发明人： Hitoshi Noguchi , Yoshihiro Kubota
IPC分类号： C30B23/00
CPC分类号： C23C16/274 , C23C16/278 , C30B25/105 , C30B29/04
摘要： There is disclosed a method for producing a diamond film on a base material by a vapor phase reaction at least with introducing a raw material gas, wherein B(OCH3)3 gas is added to the raw material gas as a source of boron to be doped, and a diamond film is deposited on the base material by a vapor phase reaction utilizing the mixed raw material gas. There can be provided a method enabling easy and uniform production of a diamond film showing a low electric resistivity value with good reproducibility and few problems concerning handling such as serious bad influence on human bodies and explosiveness during the doping process.
摘要翻译：公开了至少通过引入原料气体，通过气相反应在基材上制备金刚石膜的方法，其中B（OCH 3 3）3气体作为待掺杂的硼源加入到原料气体中，并且通过利用混合原料气体的气相反应将金刚石膜沉积在基材上。可以提供一种能够容易且均匀地制造金刚石膜的方法，其具有低的电阻率值，具有良好的再现性，并且在掺杂过程中对诸如对人体的严重不良影响和爆炸性的处理问题很少。

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