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1. 发明授权

US09932674B2 Film deposition apparatus, film deposition method, and computer-readable recording medium 有权
公开(公告)号：US09932674B2
公开(公告)日：2018-04-03
申请号：US13467324
申请日：2012-05-09
申请人： Hitoshi Kato , Katsuyuki Hishiya , Hiroyuki Kikuchi , Shigehiro Ushikubo , Shigenori Ozaki
发明人： Hitoshi Kato , Katsuyuki Hishiya , Hiroyuki Kikuchi , Shigehiro Ushikubo , Shigenori Ozaki
IPC分类号： C23C16/00 , H01L21/306 , C23C16/54 , H01J37/32 , C23C16/455
CPC分类号： C23C16/54 , C23C16/4554 , H01J37/321
摘要： A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.

2. 发明申请

US20130149467A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE RECORDING MEDIUM 有权
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读记录介质
公开(公告)号：US20130149467A1
公开(公告)日：2013-06-13
申请号：US13467324
申请日：2012-05-09
申请人： Hitoshi KATO , Katsuyuki Hishiya , Hiroyuki Kikuchi , Shigehiro Ushikubo , Shigenori Ozaki
发明人： Hitoshi KATO , Katsuyuki Hishiya , Hiroyuki Kikuchi , Shigehiro Ushikubo , Shigenori Ozaki
IPC分类号： C23C16/54
CPC分类号： C23C16/54 , C23C16/4554 , H01J37/321
摘要： A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.
摘要翻译：一种成膜装置包括：第一和第二气体依次供给多次的真空室，包括具有接收区域的第一表面和旋转真空室内部的接收区域的旋转台，第一部分供应第一气体在第一区域中，第二部分经由分离区域将第二气体供给到沿着旋转台的周向方向与第一区域分离的第二区域;等离子体气体部分，其将等离子体产生气体供应到真空中的等离子体区域中天线，面向旋转台的第一表面的天线，并通过电感耦合从等离子体空间内的等离子体产生气体产生等离子体，并且法拉第屏蔽层接地并设置在天线和等离子体空间之间，并且包括在方向垂直于天线相交。

3. 发明授权

US08642487B2 Film deposition method and film deposition apparatus 有权
标题翻译：膜沉积法和成膜装置
公开(公告)号：US08642487B2
公开(公告)日：2014-02-04
申请号：US13471587
申请日：2012-05-15
申请人： Hitoshi Kato , Shigehiro Ushikubo , Tatsuya Tamura , Shigenori Ozaki , Takeshi Kumagai , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Shigehiro Ushikubo , Tatsuya Tamura , Shigenori Ozaki , Takeshi Kumagai , Hiroyuki Kikuchi
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , C23C16/345 , C23C16/4554 , H01J37/321 , H01J37/32449 , H01J37/32715 , H01J37/32733 , H01J37/32779 , H01L21/02164 , H01L21/0228
摘要： A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.
摘要翻译：一种膜沉积方法，包括：将基板搬入真空室，并将基板放置在转台上的步骤; 转动转盘的一步; 以及吸附形成照射步骤，从第一反应气体供给部分向基板供给第一反应气体，以将第一反应气体吸附在基板上; 从第二反应气体供给部供给第二反应气体，使得吸附在基板上的第一反应气体与第二反应气体反应，以在基板上形成反应产物; 并向在第一反应气体供给部和第二反应气体供给部与旋转体的圆周方向分离的等离子体产生部供给含氢气体，以在转台上方产生等离子体，并将等离子体照射到反应产物。

4. 发明申请

US20100055347A1 ACTIVATED GAS INJECTOR, FILM DEPOSITION APPARATUS, AND FILM DEPOSITION METHOD 有权
标题翻译：活性气体注射器，膜沉积装置和膜沉积方法
公开(公告)号：US20100055347A1
公开(公告)日：2010-03-04
申请号：US12547648
申请日：2009-08-26
申请人： HITOSHI KATO , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
发明人： HITOSHI KATO , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
IPC分类号： C23C16/50 , H05H1/24 , C23C16/00
CPC分类号： H01J37/32559 , C23C16/452 , C23C16/45517 , C23C16/45536 , C23C16/45551 , C23C16/45563 , C23C16/45565 , C23C16/45578 , C23C16/4584 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/5093 , H01J1/00 , H01J37/3244 , H01J37/32449
摘要： An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.
摘要翻译：活性气体喷射器包括分隔成气体激活通道的流动通道限定部件和通过分隔壁的气体引入通道; 气体导入口，通过该气体导入口将工艺气体引入到气体导入通路内; 一对电极被供电以激活处理气体，其中电极沿着气体激活通道中的分隔壁延伸; 所述通孔形成在所述分隔壁上并且沿着所述电极的纵向方向布置，其中所述通孔允许所述工艺气体从所述气体引入通道流到所述气体激活通道; 以及沿着电极的纵向方向设置在气体致动通道中的气体喷射孔，其中气体喷射孔允许从气体激活通道中激活的处理气体从其喷射。

5. 发明申请

US20110039026A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM 审中-公开
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US20110039026A1
公开(公告)日：2011-02-17
申请号：US12852545
申请日：2010-08-09
申请人： Hitoshi Kato , Hiroyuki Kikuchi , Shigehiro Ushikubo
发明人： Hitoshi Kato , Hiroyuki Kikuchi , Shigehiro Ushikubo
IPC分类号： C23C14/22 , C23C16/44
CPC分类号： C23C16/45551 , C23C16/402 , C23C16/45536
摘要： A silicon oxide film is deposited by rotating a rotation table on which a wafer W is placed to allow BTBAS gas to be adsorbed on an upper surface of the wafer W and supply a O3 gas to the upper surface of the wafer W for allowing the BTBAS gas adsorbed on the upper surface of the wafer W to react. After depositing the silicon oxide film, a reforming process is performed every deposition cycle by supplying a plasma of Ar gas to the silicon oxide film on the wafer from an activated gas injector.
摘要翻译：通过旋转放置晶片W的旋转台来沉积氧化硅膜，以允许BTBAS气体吸附在晶片W的上表面上，并将O 3气体供应到晶片W的上表面，以允许BTBAS 吸附在晶片W的上表面上的气体反应。在沉积氧化硅膜之后，通过从活化气体注入器向晶片上的氧化硅膜提供Ar气体的等离子体，进行每个沉积循环的重整过程。

6. 发明申请

US20110155057A1 PLASMA PROCESS APPARATUS 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20110155057A1
公开(公告)日：2011-06-30
申请号：US12975355
申请日：2010-12-22
申请人： Hitoshi KATO , Tatsuya Tamura , Shigehiro Ushikubo , Hiroyuki Kikuchi
发明人： Hitoshi KATO , Tatsuya Tamura , Shigehiro Ushikubo , Hiroyuki Kikuchi
IPC分类号： C23C16/44 , C23C16/505
CPC分类号： H01L21/68764 , C23C16/45519 , C23C16/4554 , C23C16/45551 , C23C16/45578 , C23C16/45591 , C23C16/4584 , C23C16/509 , H01J37/32082 , H01J37/32733 , H01J37/32752 , H01L21/68771
摘要： A plasma process apparatus for processing a substrate by using plasma including a vacuum chamber in which the processing of the substrate is performed, a turntable inside the vacuum chamber, the turntable having at least one substrate receiving area, a rotation mechanism rotating the turntable, a gas supplying part supplying plasma generation gas to the substrate receiving area, a main plasma generating part ionizing the plasma generation gas, being provided in a position opposite to a passing area of the substrate receiving area, and extending in a rod-like manner from a center portion of the turntable to an outer circumferential portion of the turntable, an auxiliary plasma generating part compensating for insufficient plasma of the main plasma generating part, the auxiliary plasma generating part being separated from the main plasma generating part in a circumferential direction of the vacuum chamber, and an evacuating part evacuating the vacuum chamber.
摘要翻译：一种等离子体处理装置，用于通过使用等离子体处理基板，所述等离子体包括执行基板的处理的真空室，真空室内的转台，具有至少一个基板接收区域的转台，旋转转台的旋转机构，向基板接收区域供给等离子体产生气体的气体供给部，将等离子体产生气体离子化的主等离子体产生部设置在与基板容纳区域的通过区域相反的位置，并且从棒状状延伸转盘的中心部分到转盘的外周部分，辅助等离子体产生部件补偿主等离子体产生部件的等离子体不足，辅助等离子体产生部件在真空的圆周方向与主等离子体产生部件分离并且抽真空部分抽真空室。

7. 发明授权

US09053909B2 Activated gas injector, film deposition apparatus, and film deposition method 有权
标题翻译：活性气体注入器，成膜装置和成膜方法
公开(公告)号：US09053909B2
公开(公告)日：2015-06-09
申请号：US12547648
申请日：2009-08-26
申请人： Hitoshi Kato , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
IPC分类号： C23C16/50 , C23C16/505 , C23C16/509 , H01J37/32 , C23C16/455 , C23C16/452 , C23C16/458 , C23C16/06 , C23C16/22 , H01J1/00
CPC分类号： H01J37/32559 , C23C16/452 , C23C16/45517 , C23C16/45536 , C23C16/45551 , C23C16/45563 , C23C16/45565 , C23C16/45578 , C23C16/4584 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/5093 , H01J1/00 , H01J37/3244 , H01J37/32449
摘要： An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.
摘要翻译：活性气体喷射器包括分隔成气体激活通道的流动通道限定部件和通过分隔壁的气体引入通道; 气体导入口，通过该气体导入口将工艺气体引入到气体导入通路内; 一对电极被供电以激活处理气体，其中电极沿着气体激活通道中的分隔壁延伸; 所述通孔形成在所述分隔壁上并且沿着所述电极的纵向方向布置，其中所述通孔允许所述工艺气体从所述气体引入通道流到所述气体激活通道; 以及沿着电极的纵向方向设置在气体致动通道中的气体喷射孔，其中气体喷射孔允许从气体激活通道中激活的处理气体从其喷射。

8. 发明授权

US06306764B1 Batch type heat-treating method 有权
标题翻译：批式热处理方法
公开(公告)号：US06306764B1
公开(公告)日：2001-10-23
申请号：US09532901
申请日：2000-03-22
申请人： Hitoshi Kato , Takako Sano , Yukio Yamamoto , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Takako Sano , Yukio Yamamoto , Hiroyuki Kikuchi
IPC分类号： H01L2144
CPC分类号： H01L21/67109 , Y10S438/907
摘要： In a batch type vertical heat-treating method, first, product wafers and dummy wafers are set to be stacked on an upstream side of a flow of a process gas, in heat treatment, within main holding positions of a holder. The dummy substrates are set more downstream of the process gas than the product wafers. The product wafers and the dummy wafers are set in the holder in a total number smaller than a total number of the main holding positions corresponding to a maximum number of wafers that can be held by the holder, and the holder is in a partially loaded state. The partially loaded holder is loaded in a process vessel, and the product wafers are processed in the process vessel.
摘要翻译：在间歇式立式热处理方法中，首先，在保持器的主保持位置内，在处理气体的流动的上游侧将产品晶片和虚设晶片设置在热处理中。虚设基板设置在处理气体比产品晶片更多的下游。产品晶片和虚拟晶片被设置在保持器中，总数小于对应于可由保持器保持的最大数量的晶片的主保持位置的总数，并且保持器处于部分负载状态。将部分加载的保持器装载在处理容器中，并且在处理容器中处理产品晶片。

9. 发明授权

US08721790B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US08721790B2
公开(公告)日：2014-05-13
申请号：US12963673
申请日：2010-12-09
申请人： Hitoshi Kato , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Kohichi Orito , Yasushi Takeuchi , Hiroyuki Kikuchi
IPC分类号： C23C16/453 , C23C16/455 , C23C16/458 , H01L21/306 , C23F1/00 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45551 , C23C16/4412 , C23C16/45521 , C23C16/45578
摘要： A film deposition apparatus includes a turntable provided in the chamber and having on a first surface a substrate receiving area in which a substrate is placed; first and second reaction gas supplying portions supplying first and second reaction gases to the first surface, respectively; a separation gas supplying portion provided between the first reaction gas supplying portion and the second reaction gas supplying portion and supplying a separation gas that separates the first reaction gas and the second reaction gas; an evacuation port that evacuates the chamber; a space defining member provided for at least one of the first and second reaction gas supplying portions and defining a first space between the at least one of the first and second reaction gas supplying portions and the turntable and a second space so that the separation gas is likely to flow through the second space rather than the first space.
摘要翻译：一种成膜装置，包括设置在所述室中并在第一表面上具有放置基板的基板接收区域的转盘; 分别向第一表面供应第一和第二反应气体的第一和第二反应气体供应部分; 分离气体供给部，设置在第一反应气体供给部和第二反应气体供给部之间，供给分离第一反应气体和第二反应气体的分离气体; 疏散室的疏散口; 设置在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个的空间限定部件，在所述第一反应气体供给部和所述第二反应气体供给部中的至少一个与所述转台之间形成第一空间，可能流经第二空间而不是第一空间。

10. 发明申请

US20130087097A1 FILM DEPOSITION APPARATUS AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：薄膜沉积装置和基板处理装置
公开(公告)号：US20130087097A1
公开(公告)日：2013-04-11
申请号：US13644697
申请日：2012-10-04
申请人： Hitoshi KATO , Takeshi Kobayashi , Hiroyuki Kikuchi , Shigehiro Miura
发明人： Hitoshi KATO , Takeshi Kobayashi , Hiroyuki Kikuchi , Shigehiro Miura
IPC分类号： C23C16/50 , C23C16/52 , C23C16/458
CPC分类号： C23C16/45536 , C23C16/45544 , C23C16/507 , H01J37/321 , H01J37/3211
摘要： An apparatus is configured to include a gas supplying part configured to supply a plasma generating gas on a surface on a substrate mounting area side in a turntable and an antenna configured to convert the plasma generating gas to plasma by induction coupling and provided facing the surface of the substrate mounting area side in the turntable so as to extend from a center part to an outer edge part of the turntable. The antenna is arranged so as to have a distance from the turntable in the substrate mounting area not less than 3 mm longer on the center part side than on the outer edge part side.
摘要翻译：一种装置，被配置为包括气体供应部件，其构造成在转盘的基板安装区域侧的表面上提供等离子体产生气体，以及天线，被配置为通过感应耦合将等离子体产生气体转换成等离子体，旋转台中的基板安装区域侧从转台的中心部分延伸到外边缘部分。天线布置成在中心部分侧比在外边缘部分侧不小于3mm的基板安装区域中的转盘具有距离。

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