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1. 发明申请

US20130130512A1 FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS 有权
标题翻译：膜沉积方法和膜沉积装置
公开(公告)号：US20130130512A1
公开(公告)日：2013-05-23
申请号：US13471587
申请日：2012-05-15
申请人： Hitoshi KATO , Shigehiro USHIKUBO , Tatsuya TAMURA , Shigenori OZAKI , Takeshi KUMAGAI , Hiroyuki KIKUCHI
发明人： Hitoshi KATO , Shigehiro USHIKUBO , Tatsuya TAMURA , Shigenori OZAKI , Takeshi KUMAGAI , Hiroyuki KIKUCHI
IPC分类号： H01L21/02
CPC分类号： H01L21/02274 , C23C16/345 , C23C16/4554 , H01J37/321 , H01J37/32449 , H01J37/32715 , H01J37/32733 , H01J37/32779 , H01L21/02164 , H01L21/0228
摘要： A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.
摘要翻译：一种膜沉积方法，包括：将基板搬入真空室，并将基板放置在转台上的步骤; 转动转盘的一步; 以及吸附形成照射步骤，从第一反应气体供给部分向基板供给第一反应气体，以将第一反应气体吸附在基板上; 从第二反应气体供给部供给第二反应气体，使得吸附在基板上的第一反应气体与第二反应气体反应，以在基板上形成反应产物; 并向在第一反应气体供给部和第二反应气体供给部与旋转体的圆周方向分离的等离子体产生部供给含氢气体，以在转台上方产生等离子体，并将等离子体照射到反应产物。

2. 发明申请

US20110155057A1 PLASMA PROCESS APPARATUS 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20110155057A1
公开(公告)日：2011-06-30
申请号：US12975355
申请日：2010-12-22
申请人： Hitoshi KATO , Tatsuya Tamura , Shigehiro Ushikubo , Hiroyuki Kikuchi
发明人： Hitoshi KATO , Tatsuya Tamura , Shigehiro Ushikubo , Hiroyuki Kikuchi
IPC分类号： C23C16/44 , C23C16/505
CPC分类号： H01L21/68764 , C23C16/45519 , C23C16/4554 , C23C16/45551 , C23C16/45578 , C23C16/45591 , C23C16/4584 , C23C16/509 , H01J37/32082 , H01J37/32733 , H01J37/32752 , H01L21/68771
摘要： A plasma process apparatus for processing a substrate by using plasma including a vacuum chamber in which the processing of the substrate is performed, a turntable inside the vacuum chamber, the turntable having at least one substrate receiving area, a rotation mechanism rotating the turntable, a gas supplying part supplying plasma generation gas to the substrate receiving area, a main plasma generating part ionizing the plasma generation gas, being provided in a position opposite to a passing area of the substrate receiving area, and extending in a rod-like manner from a center portion of the turntable to an outer circumferential portion of the turntable, an auxiliary plasma generating part compensating for insufficient plasma of the main plasma generating part, the auxiliary plasma generating part being separated from the main plasma generating part in a circumferential direction of the vacuum chamber, and an evacuating part evacuating the vacuum chamber.
摘要翻译：一种等离子体处理装置，用于通过使用等离子体处理基板，所述等离子体包括执行基板的处理的真空室，真空室内的转台，具有至少一个基板接收区域的转台，旋转转台的旋转机构，向基板接收区域供给等离子体产生气体的气体供给部，将等离子体产生气体离子化的主等离子体产生部设置在与基板容纳区域的通过区域相反的位置，并且从棒状状延伸转盘的中心部分到转盘的外周部分，辅助等离子体产生部件补偿主等离子体产生部件的等离子体不足，辅助等离子体产生部件在真空的圆周方向与主等离子体产生部件分离并且抽真空部分抽真空室。

3. 发明申请

US20130149467A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE RECORDING MEDIUM 有权
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读记录介质
公开(公告)号：US20130149467A1
公开(公告)日：2013-06-13
申请号：US13467324
申请日：2012-05-09
申请人： Hitoshi KATO , Katsuyuki Hishiya , Hiroyuki Kikuchi , Shigehiro Ushikubo , Shigenori Ozaki
发明人： Hitoshi KATO , Katsuyuki Hishiya , Hiroyuki Kikuchi , Shigehiro Ushikubo , Shigenori Ozaki
IPC分类号： C23C16/54
CPC分类号： C23C16/54 , C23C16/4554 , H01J37/321
摘要： A film deposition apparatus includes a vacuum chamber into which first and second gases are sequentially supplied for a plural times, a rotation table including a first surface having a receiving area and rotating the receiving area inside the vacuum chamber, a first part supplying the first gas to a first region, a second part supplying the second gas to a second region separated from the first region in a peripheral direction of the rotation table via a separation region, a plasma gas part supplying a plasma generation gas into a plasma region inside the vacuum chamber, an antenna facing the first surface of the rotation table and generating plasma from the plasma generation gas inside a plasma space by inductive coupling, and a faraday shield being grounded and provided between the antenna and the plasma space and including slits aligned in a direction perpendicularly intersecting the antenna.
摘要翻译：一种成膜装置包括：第一和第二气体依次供给多次的真空室，包括具有接收区域的第一表面和旋转真空室内部的接收区域的旋转台，第一部分供应第一气体在第一区域中，第二部分经由分离区域将第二气体供给到沿着旋转台的周向方向与第一区域分离的第二区域;等离子体气体部分，其将等离子体产生气体供应到真空中的等离子体区域中天线，面向旋转台的第一表面的天线，并通过电感耦合从等离子体空间内的等离子体产生气体产生等离子体，并且法拉第屏蔽层接地并设置在天线和等离子体空间之间，并且包括在方向垂直于天线相交。

4. 发明申请

US20130059415A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD AND STORAGE MEDIUM 有权
标题翻译：薄膜沉积装置，薄膜沉积方法和储存介质
公开(公告)号：US20130059415A1
公开(公告)日：2013-03-07
申请号：US13602587
申请日：2012-09-04
申请人： Hitoshi KATO , Katsuyuki HISHIYA , Shigehiro USHIKUBO
发明人： Hitoshi KATO , Katsuyuki HISHIYA , Shigehiro USHIKUBO
IPC分类号： C23C16/505 , H01L21/50
CPC分类号： C23C16/45542 , C23C16/345 , C23C16/45551 , H01J37/321 , H01J37/32733
摘要： A film deposition apparatus includes a turntable having a substrate mounting area, a first plasma gas supplying part, a second plasma supplying part, a first plasma gas generating part to convert the first plasma generating gas to first plasma, and a second plasma generating part provided away from the first plasma generating part in a circumferential direction and to convert the second plasma generating gas to second plasma. The first plasma generating part includes an antenna facing the turntable so as to convert the first plasma generating gas to the first plasma, and a grounded Faraday shield between the antenna and an area where a plasma process is performed, and to include plural slits respectively extending in directions perpendicular to the antenna and arranged along an antenna extending direction to prevent an electric field from passing toward the substrate and to pass a magnetic field toward the substrate.
摘要翻译：一种成膜装置，包括具有基板安装区域的转台，第一等离子体气体供给部，第二等离子体供给部，将第一等离子体产生气体转换为第一等离子体的第一等离子体气体发生部，以及第二等离子体产生部，在圆周方向上离开第一等离子体产生部分并将第二等离子体产生气体转换成第二等离子体。第一等离子体产生部件包括面向转盘的天线，以将第一等离子体产生气体转换成第一等离子体，以及天线与执行等离子体处理的区域之间的接地法拉第屏蔽，并且包括分别延伸的多个狭缝在垂直于天线的方向上并沿着天线延伸方向布置，以防止电场通向衬底并使磁场朝向衬底。

5. 发明申请

US20130042813A1 FILM DEPOSITION APPARATUS 有权
标题翻译：胶片沉积装置
公开(公告)号：US20130042813A1
公开(公告)日：2013-02-21
申请号：US13571546
申请日：2012-08-10
申请人： Hitoshi KATO , Shigehiro Ushikubo , Katsuyuki Hishiya
发明人： Hitoshi KATO , Shigehiro Ushikubo , Katsuyuki Hishiya
IPC分类号： C23C16/458
CPC分类号： C23C16/4412 , C23C16/45551 , C23C16/45578 , H01L21/02164 , H01L21/02211 , H01L21/0228
摘要： A film deposition apparatus includes a turntable including plural substrate placing areas in the circumferential direction; a gas nozzle provided to extend from an inner edge to an outer edge of the substrate placing area; a gas evacuation port provided outside of an outer edge of the turntable and downstream in a rotational direction of the turntable with respect to the gas nozzle for evacuating the gas; and a regulation member including a wall portion provided between the gas nozzle and the gas evacuation port for isolating the gas nozzle and the gas evacuation port at least at a part between the inner edge to the outer edge of the substrate placing area while having a space extending from the inner edge to the outer edge of the substrate placing area when a substrate is placed on the substrate placing area.
摘要翻译：一种成膜装置，包括在圆周方向上包括多个基板放置区域的转盘; 气体喷嘴，其设置成从所述基板放置区域的内边缘延伸到外边缘; 气体排出口，其设置在所述转台的外缘的外侧，并且相对于所述气体喷嘴排出所述转台，在所述转台的旋转方向的下游; 以及调节构件，其包括设置在所述气体喷嘴和所述气体排出口之间的壁部，用于至少在所述基板放置区域的内缘与外缘之间的部分处隔开所述气体喷嘴和所述排气口，同时具有空间当基板被放置在基板放置区域上时，从基板放置区域的内边缘延伸到外边缘。

6. 发明申请

US20130047923A1 FILM DEPOSITION APPARATUS, SUBSTRATE PROCESSING APPARATUS, AND PLASMA GENERATING DEVICE 审中-公开
标题翻译：薄膜沉积装置，基板加工装置和等离子体发生装置
公开(公告)号：US20130047923A1
公开(公告)日：2013-02-28
申请号：US13588271
申请日：2012-08-17
申请人： Hitoshi KATO , Takeshi KOBAYASHI , Shigehiro USHIKUBO , Katsuyoshi AIKAWA
发明人： Hitoshi KATO , Takeshi KOBAYASHI , Shigehiro USHIKUBO , Katsuyoshi AIKAWA
IPC分类号： C23C16/513
CPC分类号： H01L21/02164 , C23C16/4554 , C23C16/45548 , C23C16/4585 , C23C16/4586 , H01J37/321 , H01J37/3244 , H01J37/32715 , H01L21/0228 , H01L21/0234
摘要： A disclosed film deposition apparatus which forms a film on a substrate inside a vacuum chamber including a turntable having a substrate mounting area, includes an antenna facing the substrate mounting area for converting the plasma generating gas to plasma, a Faraday shield intervening between the antenna and the substrate to prevent an electric field of an electromagnetic field from passing therethrough, the Faraday shield including slits arranged on the conductive plate parallel to the antenna, the slits being opened on the conductive plate in perpendicular to a direction of arranging the slits to enable a magnetic field to reach the substrate, a window opened in an area of the conductive plate surrounded by the slits, an inner conductive path between the slits and the window and grounded, and an outer conductive path on a side opposite to the window relative to the slits and surrounds the slits.
摘要翻译：公开的薄膜沉积装置，其在包括具有基板安装区域的转盘的真空室内的基板上形成膜，包括面向基板安装区域的天线，用于将等离子体产生气体转换为等离子体，介于天线与天线之间的法拉第屏蔽所述基板用于防止电磁场的电场通过，所述法拉第屏蔽包括布置在与天线平行的导电板上的狭缝，所述狭缝在导电板上垂直于布置狭缝的方向打开，以使得能够磁场到达基板，在由狭缝围绕的导电板的区域中开口的窗口，狭缝和窗口之间的内部导电路径并接地，并且在与窗口相对的一侧的外部导电路径相对于狭缝并围绕狭缝。

7. 发明申请

US20130087097A1 FILM DEPOSITION APPARATUS AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：薄膜沉积装置和基板处理装置
公开(公告)号：US20130087097A1
公开(公告)日：2013-04-11
申请号：US13644697
申请日：2012-10-04
申请人： Hitoshi KATO , Takeshi Kobayashi , Hiroyuki Kikuchi , Shigehiro Miura
发明人： Hitoshi KATO , Takeshi Kobayashi , Hiroyuki Kikuchi , Shigehiro Miura
IPC分类号： C23C16/50 , C23C16/52 , C23C16/458
CPC分类号： C23C16/45536 , C23C16/45544 , C23C16/507 , H01J37/321 , H01J37/3211
摘要： An apparatus is configured to include a gas supplying part configured to supply a plasma generating gas on a surface on a substrate mounting area side in a turntable and an antenna configured to convert the plasma generating gas to plasma by induction coupling and provided facing the surface of the substrate mounting area side in the turntable so as to extend from a center part to an outer edge part of the turntable. The antenna is arranged so as to have a distance from the turntable in the substrate mounting area not less than 3 mm longer on the center part side than on the outer edge part side.
摘要翻译：一种装置，被配置为包括气体供应部件，其构造成在转盘的基板安装区域侧的表面上提供等离子体产生气体，以及天线，被配置为通过感应耦合将等离子体产生气体转换成等离子体，旋转台中的基板安装区域侧从转台的中心部分延伸到外边缘部分。天线布置成在中心部分侧比在外边缘部分侧不小于3mm的基板安装区域中的转盘具有距离。

8. 发明申请

US20120267341A1 FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD 有权
标题翻译：膜沉积装置和膜沉积方法
公开(公告)号：US20120267341A1
公开(公告)日：2012-10-25
申请号：US13430871
申请日：2012-03-27
申请人： Hitoshi KATO , Takeshi Kumagai
发明人： Hitoshi KATO , Takeshi Kumagai
IPC分类号： C23C16/56
CPC分类号： H01L21/0228 , C23C16/045 , C23C16/402 , C23C16/45534 , C23C16/4554 , C23C16/45551 , H01L21/02164 , H01L21/0234
摘要： A film deposition method includes steps of transferring a substrate having a pattern including a concave part into a vacuum chamber; supplying a first reaction gas to the substrate from a first reaction gas supplying part, thereby allowing the first reaction gas to be adsorbed on the substrate; supplying a second reaction gas that reacts with the first reaction gas to the substrate from a second reaction gas supplying part, thereby allowing the first reaction gas adsorbed on the substrate to react with the second reaction gas and forming a reaction product of the first and the second reaction gases on the substrate; supplying an alteration gas to the substrate through an activated gas supplying part capable of activating the alteration gas; and supplying an etching gas to the substrate chamber through the activated gas supplying part under an environment where the reaction product is not formed.
摘要翻译：膜沉积方法包括以下步骤：将具有凹部的图案的基板转印到真空室中; 从第一反应气体供给部向基板供给第一反应气体，由此使第一反应气体吸附在基板上; 从第二反应气体供给部分向基板供给与第一反应气体反应的第二反应气体，从而使吸附在基板上的第一反应气体与第二反应气体反应，形成第一反应气体的反应产物基板上的第二反应气体; 通过能够激活所述改变气体的活化气体供给部件向所述基板供给改变气体; 以及在没有形成反应产物的环境下通过活性气体供给部分向基材室供给蚀刻气体。

9. 发明申请

US20110155056A1 FILM DEPOSITION APPARATUS 审中-公开
标题翻译：胶片沉积装置
公开(公告)号：US20110155056A1
公开(公告)日：2011-06-30
申请号：US12969699
申请日：2010-12-16
申请人： Hitoshi KATO , Manabu HONMA , Yasushi TAKEUCHI
发明人： Hitoshi KATO , Manabu HONMA , Yasushi TAKEUCHI
IPC分类号： C23C16/458
CPC分类号： H01L21/68764 , C23C16/45538 , C23C16/45551 , H01L21/68771
摘要： A film deposition apparatus has a vacuum chamber in which a turntable placing plural substrates is rotated, the plural substrates come into contact with plural reaction gases supplied to plural process areas and thin films are deposited on surfaces of the plural substrates, and has plural reaction gas supplying portions for supplying the plural processing gases, a separation gas supplying portion for supplying a separation gas and an evacuation mechanism for ejecting the plural processing gases and the separation gas, wherein the plural process areas includes a first process area for causing a first reaction gas to adsorb on the surfaces of the plural substrates, and a second process area, having an area larger than the first process area, for causing the first reaction gas having adsorbed the surfaces of the plural substrates and a second reaction gas to react, and depositing the films on the surfaces of the plural substrates.
摘要翻译：一种成膜装置具有：真空室，其中放置多个基板的转台旋转，多个基板与多个处理区域供应的多个反应气体接触，薄膜沉积在多个基板的表面上，并且具有多个反应气体用于供给多种处理气体的供给部分，用于供给分离气体的分离气体供给部分和用于喷射多种处理气体和分离气体的排出机构，其中多个处理区域包括：第一处理区域，用于使第一反应气体吸附在多个基板的表面上，以及具有比第一处理区域大的面积的第二处理区域，用于使吸附有多个基板的表面的第一反应气体和第二反应气体反应，在多个基板的表面上的膜。

10. 发明申请

US20070055971A1 PROGRAM OPERATING APPARATUS AND PROGRAM WRITE CONTROL APPARATUS AND METHOD 审中-公开
标题翻译：程序操作装置和程序写控制装置和方法
公开(公告)号：US20070055971A1
公开(公告)日：2007-03-08
申请号：US11554236
申请日：2006-10-30
申请人： Naoto WATANABE , Masatoshi YAGINUMA , Kiyoshi OKAMOTO , Hitoshi KATO
发明人： Naoto WATANABE , Masatoshi YAGINUMA , Kiyoshi OKAMOTO , Hitoshi KATO
IPC分类号： G06F9/44 , G06F12/00
CPC分类号： G06F8/60
摘要： A program operating apparatus is provided, which is capable of rewriting control programs for a plurality of CPUs without using any exclusive external apparatuses, thereby achieving a simplified and efficient rewrite operation. A control program stored in a ROM of a master CPU that controls the basic operation of the entire apparatus is transferred to a slave CPU and then written to an internal ROM of the slave CPU which controls the operations of functional units of the apparatus. The transfer of the control program is carried out when the mode of the apparatus is switched to a write control mode.
摘要翻译：提供了一种程序操作装置，其能够重新编写多个CPU的控制程序，而不使用任何独占的外部设备，从而实现简化和有效的重写操作。存储在控制整个装置的基本操作的主CPU的ROM中的控制程序被传送到从CPU，然后写入到控制装置的功能单元的操作的从CPU的内部ROM。当将设备的模式切换到写入控制模式时，执行控制程序的传送。

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