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1. 发明授权

US06306764B1 Batch type heat-treating method 有权
标题翻译：批式热处理方法
公开(公告)号：US06306764B1
公开(公告)日：2001-10-23
申请号：US09532901
申请日：2000-03-22
申请人： Hitoshi Kato , Takako Sano , Yukio Yamamoto , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Takako Sano , Yukio Yamamoto , Hiroyuki Kikuchi
IPC分类号： H01L2144
CPC分类号： H01L21/67109 , Y10S438/907
摘要： In a batch type vertical heat-treating method, first, product wafers and dummy wafers are set to be stacked on an upstream side of a flow of a process gas, in heat treatment, within main holding positions of a holder. The dummy substrates are set more downstream of the process gas than the product wafers. The product wafers and the dummy wafers are set in the holder in a total number smaller than a total number of the main holding positions corresponding to a maximum number of wafers that can be held by the holder, and the holder is in a partially loaded state. The partially loaded holder is loaded in a process vessel, and the product wafers are processed in the process vessel.
摘要翻译：在间歇式立式热处理方法中，首先，在保持器的主保持位置内，在处理气体的流动的上游侧将产品晶片和虚设晶片设置在热处理中。虚设基板设置在处理气体比产品晶片更多的下游。产品晶片和虚拟晶片被设置在保持器中，总数小于对应于可由保持器保持的最大数量的晶片的主保持位置的总数，并且保持器处于部分负载状态。将部分加载的保持器装载在处理容器中，并且在处理容器中处理产品晶片。

2. 发明授权

US09093490B2 Film deposition apparatus 有权
标题翻译：膜沉积装置
公开(公告)号：US09093490B2
公开(公告)日：2015-07-28
申请号：US12713317
申请日：2010-02-26
申请人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/455 , C23C16/40 , H01L21/677 , H01L21/687
CPC分类号： H01L21/68764 , C23C16/402 , C23C16/45551 , C23C16/45578 , C23C16/45589 , H01L21/68771
摘要： A disclosed film deposition apparatus for depositing a film on a substrate by supplying a reaction gas to an upper surface of the substrate in a vacuum chamber includes a susceptor provided in the vacuum chamber, wherein substrate receiving areas are formed along a circle whose center lies in a center portion of the susceptor; a main gas supplying portion provided opposing the susceptor in order to supply the reaction gas to the substrate receiving areas of the susceptor; a compensation gas supplying portion configured to supply the reaction gas to an upper surface of the susceptor in order to compensate for concentration of the reaction gas supplied from the main gas supplying portion along a radius direction of the susceptor; and a rotation mechanism configured to rotate the susceptor relative to the main gas supplying portion and the compensation gas supplying portion around the center portion of the susceptor.
摘要翻译：公开的一种用于在真空室中将反应气体提供给基板的上表面的基板上沉积薄膜的薄膜沉积装置包括设置在真空室中的基座，其中基板接收区域沿着中心位于基座的中心部分; 主气体供给部，其与所述基座相对设置，以将所述反应气体供应到所述基座的所述基板接收区域; 补偿气体供给部，其构造成将反应气体供给到所述基座的上表面，以补偿从所述主气体供给部沿着所述基座的半径方向供给的反应气体的浓度; 以及旋转机构，其构造成使所述基座相对于所述主气体供给部和所述补偿气体供给部围绕所述基座的中心部旋转。

3. 发明申请

US20110159188A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER-READABLE STORAGE MEDIUM 审中-公开
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US20110159188A1
公开(公告)日：2011-06-30
申请号：US12972599
申请日：2010-12-20
申请人： Hitoshi Kato , Kohichi Orito , Hiroyuki Kikuchi , Muneyuki Otani , Takeshi Kumagai , Kensaku Narushima , Takashi Nishimori
发明人： Hitoshi Kato , Kohichi Orito , Hiroyuki Kikuchi , Muneyuki Otani , Takeshi Kumagai , Kensaku Narushima , Takashi Nishimori
IPC分类号： C23C16/34 , C23C16/00 , C23C16/52
CPC分类号： C23C16/4584 , C23C16/34 , C23C16/4412 , C23C16/45519 , C23C16/45523 , C23C16/45591 , C23C16/4585 , C23C16/50 , C23C16/52 , H01L21/28556 , H01L21/76843
摘要： A film deposition apparatus rotates a turntable and each gas nozzle relatively to each other at a rotational speed of 100 rpm or higher when depositing a titanium nitride film, to speed up a reaction gas supply cycle or a film deposition cycle of a reaction product. A next film of the reaction product is deposited before the grain size of the reaction product already generated on a substrate surface begins to grow due to crystallization of the already generated reaction product.
摘要翻译：当沉积氮化钛膜时，成膜装置以100rpm或更高的旋转速度使转台和每个气体喷嘴彼此相对旋转，以加速反应气体供应循环或反应产物的成膜循环。在已经产生的反应产物的晶粒尺寸由于已经产生的反应产物的结晶开始生长之后，沉积下一个反应产物的膜。

4. 发明申请

US20100260936A1 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND COMPUTER-READABLE STORAGE MEDIUM 有权
标题翻译：基板处理装置，基板处理方法和计算机可读存储介质
公开(公告)号：US20100260936A1
公开(公告)日：2010-10-14
申请号：US12753978
申请日：2010-04-05
申请人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/52 , C23C16/00 , C23C16/44
CPC分类号： H01L21/67207 , C23C16/52 , C23C16/54 , H01L21/67109 , H01L21/6719 , H01L21/68764 , H01L21/68771
摘要： In a substrate processing apparatus, a film deposition device and a heat processing device to perform an anneal processing are airtightly connected to a vacuum conveying chamber, and a substrate rotating unit to cause a substrate to rotate around a vertical axis is provided in the vacuum conveying chamber. A control unit is arranged to stop a relative rotation of a plurality of reactive gas supplying units, a separating gas supplying unit and a table by a rotation device in the middle of a film deposition process of the substrate, cause a conveying unit to take out the substrate from a vacuum chamber, and output a control signal that causes a substrate rotating unit to change a direction of the substrate.
摘要翻译：在基板处理装置中，进行退火处理的成膜装置和热处理装置气密地连接到真空输送室，并且在真空输送中设置使基板绕垂直轴旋转的基板旋转单元房间。控制单元设置成在基板的成膜过程的中间通过旋转装置停止多个反应气体供给单元，分离气体供给单元和台的相对旋转，使得输送单元取出来自真空室的基板，并输出使基板旋转单元改变基板的方向的控制信号。

5. 发明申请

US20050255712A1 Method of cvd for forming silicon nitride film on substrate 有权
标题翻译：用于在衬底上形成氮化硅膜的cvd方法
公开(公告)号：US20050255712A1
公开(公告)日：2005-11-17
申请号：US10518025
申请日：2004-01-19
申请人： Hitoshi Kato , Koichi Orito , Hiroyuki Kikuchi , Shingo Maku
发明人： Hitoshi Kato , Koichi Orito , Hiroyuki Kikuchi , Shingo Maku
IPC分类号： C23C16/34 , C23C16/46 , H01L21/318 , H01L21/471
CPC分类号： C23C16/45542 , C23C16/345 , C23C16/46 , H01L21/3185
摘要： A CVD method is to form a silicon nitride film on a target substrate (W). The method includes heating the substrate (W) accommodated in a process container (8), at a process temperature, and supplying a process gas including hexaethylamino-disilane gas and ammonia gas onto the substrate (W) heated at the process temperature, thereby depositing a silicon nitride film on the substrate (W).
摘要翻译： CVD方法是在目标衬底（W）上形成氮化硅膜。该方法包括在处理温度下加热容纳在处理容器（8）中的基板（W），并将包含六乙基氨基 - 乙硅烷气体和氨气的处理气体供给到在工艺温度下加热的基板（W）上，由此沉积在衬底（W）上的氮化硅膜。

6. 发明授权

US08992685B2 Substrate processing apparatus, substrate processing method, and computer-readable storage medium 有权
标题翻译：基板处理装置，基板处理方法和计算机可读存储介质
公开(公告)号：US08992685B2
公开(公告)日：2015-03-31
申请号：US12753978
申请日：2010-04-05
申请人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi , Yu Wamura , Jun Ogawa
发明人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi , Yu Wamura , Jun Ogawa
IPC分类号： C23C16/00 , H01L21/67 , H01L21/687 , C23C16/54 , C23C16/52
CPC分类号： H01L21/67207 , C23C16/52 , C23C16/54 , H01L21/67109 , H01L21/6719 , H01L21/68764 , H01L21/68771
摘要： In a substrate processing apparatus, a film deposition device and a heat processing device to perform an anneal processing are airtightly connected to a vacuum conveying chamber, and a substrate rotating unit to cause a substrate to rotate around a vertical axis is provided in the vacuum conveying chamber. A control unit is arranged to stop a relative rotation of a plurality of reactive gas supplying units, a separating gas supplying unit and a table by a rotation device in the middle of a film deposition process of the substrate, cause a conveying unit to take out the substrate from a vacuum chamber, and output a control signal that causes a substrate rotating unit to change a direction of the substrate.
摘要翻译：在基板处理装置中，进行退火处理的成膜装置和热处理装置气密地连接到真空输送室，并且在真空输送中设置使基板绕垂直轴旋转的基板旋转单元房间。控制单元设置成在基板的成膜过程的中间通过旋转装置停止多个反应气体供给单元，分离气体供给单元和台的相对旋转，使得输送单元取出来自真空室的基板，并且输出使基板旋转单元改变基板的方向的控制信号。

7. 发明授权

US08882915B2 Film deposition apparatus, film deposition method, and computer readable storage medium 有权
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US08882915B2
公开(公告)日：2014-11-11
申请号：US12753932
申请日：2010-04-05
申请人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/455 , C23C16/458 , C23C16/46 , H01L21/67 , C23C16/48 , C23C16/40 , C23C16/54 , H01L21/687
CPC分类号： H01L21/67115 , C23C16/402 , C23C16/45519 , C23C16/45536 , C23C16/45551 , C23C16/45578 , C23C16/458 , C23C16/46 , C23C16/463 , C23C16/482 , C23C16/54 , H01L21/6719 , H01L21/67207 , H01L21/68764 , H01L21/68771
摘要： A rotation table on which a wafer is placed is rotated around a vertical axis in order to supply to an upper surface of the wafer a first reaction gas for allowing the first reaction gas to be adsorbed on the upper surface, an auxiliary gas that reacts with the first reaction gas to produce an intermediate product having reflowability, and a second reaction gas that is reacted with the intermediate product to produce a reaction product in this order; and the reaction product is heated by a heating lamp in order to densify the reaction product.
摘要翻译：放置晶片的旋转台围绕垂直轴旋转，以向晶片的上表面提供用于允许第一反应气体吸附在上表面上的第一反应气体，与产生具有回流性的中间产物的第一反应气体和与中间产物反应以产生反应产物的第二反应气体; 并且通过加热灯加热反应产物以使反应产物致密化。

8. 发明授权

US09053909B2 Activated gas injector, film deposition apparatus, and film deposition method 有权
标题翻译：活性气体注入器，成膜装置和成膜方法
公开(公告)号：US09053909B2
公开(公告)日：2015-06-09
申请号：US12547648
申请日：2009-08-26
申请人： Hitoshi Kato , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Yasushi Takeuchi , Shigehiro Ushikubo , Hiroyuki Kikuchi
IPC分类号： C23C16/50 , C23C16/505 , C23C16/509 , H01J37/32 , C23C16/455 , C23C16/452 , C23C16/458 , C23C16/06 , C23C16/22 , H01J1/00
CPC分类号： H01J37/32559 , C23C16/452 , C23C16/45517 , C23C16/45536 , C23C16/45551 , C23C16/45563 , C23C16/45565 , C23C16/45578 , C23C16/4584 , C23C16/50 , C23C16/505 , C23C16/509 , C23C16/5093 , H01J1/00 , H01J37/3244 , H01J37/32449
摘要： An activated gas injector includes a flow passage defining member partitioned into a gas activation passage and a gas introduction passage by a partition wall; a gas introduction port through which a process gas is introduced into the gas introduction passage; a pair of electrodes to be supplied with electrical power to activate the process gas, wherein the electrodes extend along the partition wall in the gas activation passage; through-holes formed in the partition wall and arranged along a longitudinal direction of the electrodes, wherein the through-holes allow the process gas to flow from the gas introduction passage to the gas activation passage; and gas ejection holes provided in the gas activation passage along the longitudinal direction of the electrodes, wherein the gas ejection holes allow the process gas activated in the gas activation passage to be ejected therefrom.
摘要翻译：活性气体喷射器包括分隔成气体激活通道的流动通道限定部件和通过分隔壁的气体引入通道; 气体导入口，通过该气体导入口将工艺气体引入到气体导入通路内; 一对电极被供电以激活处理气体，其中电极沿着气体激活通道中的分隔壁延伸; 所述通孔形成在所述分隔壁上并且沿着所述电极的纵向方向布置，其中所述通孔允许所述工艺气体从所述气体引入通道流到所述气体激活通道; 以及沿着电极的纵向方向设置在气体致动通道中的气体喷射孔，其中气体喷射孔允许从气体激活通道中激活的处理气体从其喷射。

9. 发明授权

US08642487B2 Film deposition method and film deposition apparatus 有权
标题翻译：膜沉积法和成膜装置
公开(公告)号：US08642487B2
公开(公告)日：2014-02-04
申请号：US13471587
申请日：2012-05-15
申请人： Hitoshi Kato , Shigehiro Ushikubo , Tatsuya Tamura , Shigenori Ozaki , Takeshi Kumagai , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Shigehiro Ushikubo , Tatsuya Tamura , Shigenori Ozaki , Takeshi Kumagai , Hiroyuki Kikuchi
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , C23C16/345 , C23C16/4554 , H01J37/321 , H01J37/32449 , H01J37/32715 , H01J37/32733 , H01J37/32779 , H01L21/02164 , H01L21/0228
摘要： A film deposition method including: a step of carrying a substrate into a vacuum chamber, and placing the substrate on a turntable; a step of rotating the turntable; and an adsorption-formation-irradiation step of supplying a first reaction gas to the substrate from a first reaction gas supply part to adsorb the first reaction gas on the substrate; supplying a second reaction gas from a second reaction gas supply part so that the first reaction gas adsorbed on the substrate reacts with the second reaction gas so as to form a reaction product on the substrate; and supplying a hydrogen containing gas to a plasma generation part that is separated from the first reaction gas supply part and the second reaction gas supply part in a circumferential direction of the turntable so as to generate plasma above the turntable and to irradiate the plasma to the reaction product.
摘要翻译：一种膜沉积方法，包括：将基板搬入真空室，并将基板放置在转台上的步骤; 转动转盘的一步; 以及吸附形成照射步骤，从第一反应气体供给部分向基板供给第一反应气体，以将第一反应气体吸附在基板上; 从第二反应气体供给部供给第二反应气体，使得吸附在基板上的第一反应气体与第二反应气体反应，以在基板上形成反应产物; 并向在第一反应气体供给部和第二反应气体供给部与旋转体的圆周方向分离的等离子体产生部供给含氢气体，以在转台上方产生等离子体，并将等离子体照射到反应产物。

10. 发明申请

US20100227059A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND COMPUTER READABLE STORAGE MEDIUM 审中-公开
标题翻译：薄膜沉积装置，薄膜沉积方法和计算机可读存储介质
公开(公告)号：US20100227059A1
公开(公告)日：2010-09-09
申请号：US12713225
申请日：2010-02-26
申请人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
发明人： Hitoshi Kato , Manabu Honma , Hiroyuki Kikuchi
IPC分类号： C23C16/458 , C23C16/00 , C23C16/52
CPC分类号： C23C16/45551
摘要： A film is deposited to a predetermined thickness on a wafer by allowing the wafer placed on a susceptor to alternately move through plural process areas where corresponding plural reaction gases are supplied from corresponding plural reaction gas supplying portions and a separation area where a separation gas is supplied from a separation gas supplying portion in order to separate the plural reaction gases. Such movement is achieved by rotating the susceptor relative to the plural reaction gas supplying portions and the separation gas supplying portion, or rotating the plural reaction gas supplying portions and the separation gas supplying portion relative to the susceptor. Then, when the film is deposited in the above manner to a predetermined thickness, the film deposition is temporarily stopped; the wafer is rotated around its center; and the film is deposited to another predetermined thickness in the same manner.
摘要翻译：通过允许放置在基座上的晶片交替地移动通过从相应的多个反应气体供应部分供应相应的多个反应气体的多个处理区域和分离气体供应的分离区域，将薄膜沉积到晶片上的预定厚度从分离气体供给部分分离多个反应气体。通过使基座相对于多个反应气体供给部和分离气体供给部旋转，或者使多个反应气体供给部和分离气体供给部相对于基座旋转而实现。然后，当以上述方式将膜沉积到预定厚度时，膜沉积暂时停止; 晶片绕其中心旋转; 并且以相同的方式将膜沉积到另一预定厚度。

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