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1. 发明授权

US07629362B2 2-pyridine carboxamide derivatives 有权
标题翻译： 2-吡啶甲酰胺衍生物
公开(公告)号：US07629362B2
公开(公告)日：2009-12-08
申请号：US10545424
申请日：2004-02-13
申请人： Morihiro Mitsuya , Makoto Bamba , Fumiko Sakai , Hitomi Watanabe , Yasuhiro Sasaki , Teruyuki Nishimura , Jun-ichi Eiki
发明人： Morihiro Mitsuya , Makoto Bamba , Fumiko Sakai , Hitomi Watanabe , Yasuhiro Sasaki , Teruyuki Nishimura , Jun-ichi Eiki
IPC分类号： A61K31/4436 , C07D417/14 , C07D401/14
CPC分类号： C07D471/04 , C07D417/14
摘要： The present invention relates to a compound which has a glucokinase-activating effect and is useful as a therapeutic agent for diabetes mellitus, being represented by a formula (I): [wherein X1 represents a nitrogen atom, sulfur atom, oxygen atom or the like; R1 represents a 6- to 10-membered aryl group, 5- to 7-membered heteroaryl group or the like; D represents an oxygen atom or sulfur atom; R2 and R3 are the same or different, each representing a hydrogen atom, lower alkyl group or the like; a formula (II) represents an optionally substituted 5- to 7-membered heteroaryl group or the like; a formula (III) represents a monocyclic or bicyclic heteroaryl group] or a pharmaceutically acceptable salt thereof.
摘要翻译：本发明涉及具有葡糖激酶活化作用并可用作糖尿病治疗剂的化合物，其由式（I）表示：[其中X1表示氮原子，硫原子，氧原子等 ; R1表示6-至10-元芳基，5-至7-元杂芳基等; D表示氧原子或硫原子; R2和R3相同或不同，各自表示氢原子，低级烷基等; 式（II）表示任选取代的5〜7元杂芳基等; 式（III）表示单环或双环杂芳基]或其药学上可接受的盐。

2. 发明申请

US20050059215A1 Semiconductor device with dual gate oxides 失效
标题翻译：具有双栅极氧化物的半导体器件
公开(公告)号：US20050059215A1
公开(公告)日：2005-03-17
申请号：US10973852
申请日：2004-10-25
申请人： Inki Kim , Sang Kim , Min Paek , Chiew Ping , Wan Lee , Choong Chien , Zadig Lam , Hitomi Watanabe , Naoto Inoue
发明人： Inki Kim , Sang Kim , Min Paek , Chiew Ping , Wan Lee , Choong Chien , Zadig Lam , Hitomi Watanabe , Naoto Inoue
IPC分类号： H01L21/8234
CPC分类号： H01L21/823462 , H01L21/823481 , Y10S438/981
摘要： A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and the second active region uses a second operational voltage that is different from the first voltage. A nitride layer overlying the first and second active regions is formed. An oxide layer overlying the nitride layer is formed. A first portion of the oxide layer overlying the first active region is removed to expose a first portion of the nitride layer. The exposed first portion of the nitride layer is removed using a wet etch method while leaving a second portion of the nitride layer that is overlying the second active region intact. Thereafter, a first gate oxide having a first thickness is formed on the first active region, the first gate oxide having a first edge facing the first isolation structure and a second edge facing the second isolation structure. The first edge is separated from the first isolation structure by a first distance. The second edge is separated from the second isolation structure by a second distance. Thereafter, a second gate oxide having a second thickness is formed on the second active region, the second thickness being different than the first thickness.
摘要翻译：制造具有第一有源区和第二有源区的半导体器件的方法包括提供在衬底上限定第一有源区的第一和第二隔离结构。第一有源区域使用第一工作电压，而第二有源区域使用不同于第一电压的第二工作电压。形成覆盖第一和第二有源区的氮化物层。形成覆盖氮化物层的氧化物层。去除覆盖在第一有源区上的氧化物层的第一部分以露出氮化物层的第一部分。使用湿蚀刻方法去除氮化物层的暴露的第一部分，同时留下覆盖第二有源区域的氮化物层的第二部分完好无损。此后，在第一有源区上形成具有第一厚度的第一栅极氧化物，第一栅极氧化物具有面对第一隔离结构的第一边缘和面向第二隔离结构的第二边缘。第一边缘与第一隔离结构隔开第一距离。第二边缘与第二隔离结构隔开第二距离。此后，在第二有源区上形成具有第二厚度的第二栅极氧化物，第二厚度不同于第一厚度。

3. 发明授权

US06656780B2 Method of manufacturing a semiconductor device having nitrogen ions by twice RTA processes 有权
标题翻译：通过两次RTA工艺制造具有氮离子的半导体器件的方法
公开(公告)号：US06656780B2
公开(公告)日：2003-12-02
申请号：US09916518
申请日：2001-07-27
申请人： Hitomi Watanabe
发明人： Hitomi Watanabe
IPC分类号： H01L21336
CPC分类号： H01L21/28185 , H01L21/28202 , H01L21/823857 , H01L29/518
摘要： In the fabrication of a MOS transistor, a single process step is performed for controlling the threshold voltage of the transistor and improving the reliability of a gate insulating film so that the number of manufacturing steps is decreased. A desired amount of fixed electric charge is provided at an interface between a semiconductor substrate and the gate insulating film by a nitriding process performed on the gate insulating film to form a channel region and control the threshold voltage of the MOS transistor, so that both an improvement in the reliability of the gate insulating film and control of the threshold voltage of the MOS transistor are performed in one step.
摘要翻译：在MOS晶体管的制造中，执行单个工艺步骤来控制晶体管的阈值电压并提高栅极绝缘膜的可靠性，使得制造步骤的数量减少。通过在栅极绝缘膜上进行的氮化处理，在半导体衬底和栅极绝缘膜之间的界面处提供所需量的固定电荷，以形成沟道区并控制MOS晶体管的阈值电压，在一个步骤中执行栅极绝缘膜的可靠性的提高和MOS晶体管的阈值电压的控制。

4. 发明授权

US08344003B2 2-pyridinecarboxamide derivatives 有权
标题翻译： 2-吡啶甲酰胺衍生物
公开(公告)号：US08344003B2
公开(公告)日：2013-01-01
申请号：US12604835
申请日：2009-10-23
申请人： Morihiro Mitsuya , Makoto Bamba , Fumiko Sakai , Hitomi Watanabe , Yasuhiro Sasaki , Teruyuki Nishimura , Jun-ichi Eiki
发明人： Morihiro Mitsuya , Makoto Bamba , Fumiko Sakai , Hitomi Watanabe , Yasuhiro Sasaki , Teruyuki Nishimura , Jun-ichi Eiki
IPC分类号： A61K31/4436 , C07D417/14 , C07D401/14
CPC分类号： C07D471/04 , C07D417/14
摘要： The present invention relates to a compound which has a glucokinase-activating effect and is useful as a therapeutic agent for diabetes mellitus, being represented by a formula (I): [wherein X1 represents a nitrogen atom, sulfur atom, oxygen atom or the like; R1 represents a 6- to 10-membered aryl group, 5- to 7-membered heteroaryl group or the like; D represents an oxygen atom or sulfur atom; R2 and R3 are the same or different, each representing a hydrogen atom, lower alkyl group or the like; a formula (II) represents an optionally substituted 5- to 7-membered heteroaryl group or the like; a formula (III) represents a monocyclic or bicyclic heteroaryl group] or a pharmaceutically acceptable salt thereof.
摘要翻译：本发明涉及具有葡糖激酶活化作用并可用作糖尿病治疗剂的化合物，其由式（I）表示：[其中X1表示氮原子，硫原子，氧原子等 ; R1表示6-至10-元芳基，5-至7-元杂芳基等; D表示氧原子或硫原子; R2和R3相同或不同，各自表示氢原子，低级烷基等; 式（II）表示任选取代的5〜7元杂芳基等; 式（III）表示单环或双环杂芳基]或其药学上可接受的盐。

5. 发明授权

US08138197B2 Spirochromanon derivatives 有权
标题翻译：螺二色素衍生物
公开(公告)号：US08138197B2
公开(公告)日：2012-03-20
申请号：US12518466
申请日：2008-01-08
申请人： Tomoharu Iino , Hideki Jona , Hideki Kurihara , Masayuki Nakamura , Kenji Niiyama , Jun Shibata , Tadashi Shimamura , Hitomi Watanabe , Takeru Yamakawa , Lihu Yang
发明人： Tomoharu Iino , Hideki Jona , Hideki Kurihara , Masayuki Nakamura , Kenji Niiyama , Jun Shibata , Tadashi Shimamura , Hitomi Watanabe , Takeru Yamakawa , Lihu Yang
IPC分类号： A61K31/438 , C07D221/20
CPC分类号： C07D491/107 , C07D491/20 , C07D519/00
摘要： The invention relates to a compound of a general formula (I): wherein Ar1 represents a group formed from an aromatic ring selected from a group consisting of benzene, pyrazole, isoxazole, pyridine, indole, 1H-indazole, 1H-furo[2,3-c]pyrazole, 1H-thieno[2,3-c]pyrazole, benzimidazole, 1,2-benzisoxazole, imidazo[1,2-a]pyridine, imidazo[1,5-a]pyridine and 1H-pyrazolo[3,4-a]pyridine, having Ar2, and optionally having one or two or more substituents selected from R3; R1 and R2 each independently represent a hydrogen atom, a halogen atom, a cyano group, a C2-C6 alkenyl group, a C1-C6 alkoxy group, a C2-C7 alkanoyl group, a C2-C7 alkoxycarbonyl group, an aralkyloxycarbonyl group, a carbamoyl-C1-C6 alkoxy group, a carboxy-C2-C6 alkenyl group, or a group of -Q1-N(Ra)-Q2-Rb; or a C1-C6 alkyl group optionally having a substituent; or an aryl or heterocyclic group optionally having a substituent; or a C1-C6 alkyl group or a C2-C6 alkenyl group having the aryl or heterocyclic group; T and U each independently represent a nitrogen atom or a methine group; and V represents an oxygen atom or a sulfur atom. The compound of the invention is useful as therapeutical agents for various ACC-related diseases.
摘要翻译：本发明涉及通式（I）的化合物：其中Ar 1表示由选自苯，吡唑，异恶唑，吡啶，吲哚，1H-吲唑，1H-呋喃并[ 3-c]吡唑，1H-噻吩并[2,3-c]吡唑，苯并咪唑，1,2-苯并异恶唑，咪唑并[1,2-a]吡啶，咪唑并[1,5-a]吡啶和1H-吡唑并[ 3,4-a]吡啶，其具有Ar 2，并且任选具有一个或两个或更多个选自R 3的取代基; R 1和R 2各自独立地表示氢原子，卤素原子，氰基，C 2 -C 6烯基，C 1 -C 6烷氧基，C 2 -C 7烷酰基，C 2 -C 7烷氧基羰基，芳烷氧基羰基，氨基甲酰基-C 1 -C 6烷氧基，羧基-C 2 -C 6烯基或-Q 1 -N（R a）-Q 2 -R b的基团; 或任选具有取代基的C1-C6烷基; 或任选具有取代基的芳基或杂环基; 或具有芳基或杂环基的C 1 -C 6烷基或C 2 -C 6烯基; T和U各自独立地表示氮原子或次甲基; V表示氧原子或硫原子。本发明的化合物可用作各种ACC相关疾病的治疗剂。

6. 发明授权

US07241665B2 Shallow trench isolation 失效
标题翻译：浅沟隔离
公开(公告)号：US07241665B2
公开(公告)日：2007-07-10
申请号：US11485838
申请日：2006-07-12
申请人： Inki Kim , Sang Yeon Kim , Min Paek , Ch'ng Toh Ghee , Ramakrishnan Rajagopal , Chiew Sin Ping , Wan Gie Lee , Choong Shiau Chien , Charlie Tay , Chang Gi Lee , Hitomi Watanabe , Naoto Inoue
发明人： Inki Kim , Sang Yeon Kim , Min Paek , Ch'ng Toh Ghee , Ramakrishnan Rajagopal , Chiew Sin Ping , Wan Gie Lee , Choong Shiau Chien , Charlie Tay , Chang Gi Lee , Hitomi Watanabe , Naoto Inoue
IPC分类号： H01L21/76
CPC分类号： H01L21/823481 , H01L21/76232 , H01L21/823462
摘要： A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.
摘要翻译：在半导体衬底上形成隔离结构的方法包括使用包括蚀刻剂气体和聚合物形成气体的工艺气体来打开覆盖衬底的衬垫氧化物层的一部分。通过开口步骤曝光的基板的一部分被蚀刻以形成具有第一斜率和第二斜率的沟槽。第一斜坡大于45度，第二坡度小于45度。填充沟槽以形成隔离结构。

7. 发明授权

US07091104B2 Shallow trench isolation 失效
公开(公告)号：US07091104B2
公开(公告)日：2006-08-15
申请号：US10351472
申请日：2003-01-23
申请人： Inki Kim , Sang Yeon Kim , Min Paek , Ch'ng Toh Ghee , Ramakrishnan Rajagopal , Chiew Gie Lee , Wan Gie Lee , Choong Shiau Chien , Charlie Tay , Chang Gi Lee , Hitomi Watanabe , Naoto Inoue
发明人： Inki Kim , Sang Yeon Kim , Min Paek , Ch'ng Toh Ghee , Ramakrishnan Rajagopal , Chiew Gie Lee , Wan Gie Lee , Choong Shiau Chien , Charlie Tay , Chang Gi Lee , Hitomi Watanabe , Naoto Inoue
IPC分类号： H01L21/76
CPC分类号： H01L21/823481 , H01L21/76232 , H01L21/823462
摘要： A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.

8. 发明申请

US20110319396A1 BENZODIAZEPIN-2-ON DERIVATIVES 审中-公开
标题翻译：苯并咪唑-2-酮衍生物
公开(公告)号：US20110319396A1
公开(公告)日：2011-12-29
申请号：US13142005
申请日：2010-01-19
申请人： Masanori Asai , Tasuku Haketa , Seiichi Inamura , Makoto Ishikawa , Hideki Jona , Hiroshi Kawamoto , Hideki Kurihara , Jun Shibata , Tadashi Shimamura , Takuya Suga , Hitomi Watanabe
发明人： Masanori Asai , Tasuku Haketa , Seiichi Inamura , Makoto Ishikawa , Hideki Jona , Hiroshi Kawamoto , Hideki Kurihara , Jun Shibata , Tadashi Shimamura , Takuya Suga , Hitomi Watanabe
IPC分类号： A61K31/5513 , C07D401/12 , C07D417/12 , A61P3/04 , C07D409/12 , A61P3/06 , A61P3/10 , C07D243/14 , C07D403/12
CPC分类号： C07D243/12 , A61K31/551 , C07D401/12 , C07D403/12 , C07D409/12 , C07D413/12 , C07D417/12
摘要： The present invention relates to a compound represented by the formula (I): wherein R1 represents a hydrogen atom or the like; R2 represents lower alkyl or the like; R3 and R4 represent lower alkyl or the like; R5 represents phenyl or the like; R6 represents a hydrogen atom or the like; m is an integer of from 0 to 2; p is an integer of from 1 to 4; and q is an integer of from 1 to 5, or a pharmaceutical acceptable salt thereof, and a DGAT 1 inhibitor comprising the compound.
摘要翻译：本发明涉及由式（I）表示的化合物：其中R1表示氢原子等; R2代表低级烷基等; R3和R4表示低级烷基等; R5表示苯基等; R6表示氢原子等; m为0〜2的整数; p是1至4的整数; 和q为1〜5的整数，或其药学上可接受的盐和包含该化合物的DGAT 1抑制剂。

9. 发明申请

US20090270436A1 SPIROCHROMANON DERIVATIVES 有权
标题翻译：螺吡喃衍生物
公开(公告)号：US20090270436A1
公开(公告)日：2009-10-29
申请号：US12518466
申请日：2008-01-08
申请人： Tomoharu Iino , Hideki Jona , Hideki Kurihara , Masayuki Nakamura , Kenji Niiyama , Jun Shibata , Tadashi Shimamura , Hitomi Watanabe , Takeru Yamakawa , Lihu Yang
发明人： Tomoharu Iino , Hideki Jona , Hideki Kurihara , Masayuki Nakamura , Kenji Niiyama , Jun Shibata , Tadashi Shimamura , Hitomi Watanabe , Takeru Yamakawa , Lihu Yang
IPC分类号： A61K31/438 , C07D401/14 , A61P3/00 , A61P35/00 , A61P31/00
CPC分类号： C07D491/107 , C07D491/20 , C07D519/00
摘要： The invention relates to a compound of a general formula (I): wherein Ar1 represents a group formed from an aromatic ring selected from a group consisting of benzene, pyrazole, isoxazole, pyridine, indole, 1H-indazole, 1H-furo[2,3-c]pyrazole, 1H-thieno[2,3-c]pyrazole, benzimidazole, 1,2-benzisoxazole, imidazo[1,2-a]pyridine, imidazo[1,5-a]pyridine and 1H-pyrazolo[3,4-b]pyridine, having Ar2, and optionally having one or two or more substituents selected from R3: R1 and R2 each independently represent a hydrogen atom, a halogen atom, a cyano group, a C2-C6 alkenyl group, a C1-C6 alkoxy group, a C2-C7 alkanoyl group, a C2-C7 alkoxycarbonyl group, an aralkyloxycarbonyl group, a carbamoyl-C1-C6 alkoxy group, a carboxy-C2-C6 alkenyl group, or a group of -Q1-N(Ra)-Q2-Rb; or a C1-C6 alkyl group optionally having a substituent; or an aryl or heterocyclic group optionally having a substituent; or a C1-C6 alkyl group or a C2-C6 alkenyl group having the aryl or heterocyclic group; T and U each independently represent a nitrogen atom or a machine group; and V represents an oxygen atom or a sulfur atom. The compound of the invention is useful as therapeutical agents for various ACC-related diseases.
摘要翻译：本发明涉及通式（I）的化合物：其中Ar 1表示由选自苯，吡唑，异恶唑，吡啶，吲哚，1H-吲唑，1H-呋喃并[ 3-c]吡唑，1H-噻吩并[2,3-c]吡唑，苯并咪唑，1,2-苯并异恶唑，咪唑并[1,2-a]吡啶，咪唑并[1,5-a]吡啶和1H-吡唑并[ 具有Ar 2且任选具有一个或两个以上选自R 3：R 1和R 2的取代基的3,4-b]吡啶各自独立地表示氢原子，卤素原子，氰基，C 2 -C 6烯基， C1-C6烷氧基，C2-C7烷酰基，C2-C7烷氧基羰基，芳烷氧基羰基，氨基甲酰基C1-C6烷氧基，羧基-C2-C6链烯基或-Q1-N （Ra）-Q2-Rb; 或任选具有取代基的C1-C6烷基; 或任选具有取代基的芳基或杂环基; 或具有芳基或杂环基的C 1 -C 6烷基或C 2 -C 6烯基; T和U各自独立地表示氮原子或机组; V表示氧原子或硫原子。本发明的化合物可用作各种ACC相关疾病的治疗剂。

10. 发明授权

US07259071B2 Semiconductor device with dual gate oxides 失效
标题翻译：具有双栅极氧化物的半导体器件
公开(公告)号：US07259071B2
公开(公告)日：2007-08-21
申请号：US10973852
申请日：2004-10-25
申请人： Inki Kim , Sang Yeon Kim , Min Paek , Chiew Sin Ping , Wan Gie Lee , Choong Shiau Chien , Zadig Lam , Hitomi Watanabe , Naoto Inoue
发明人： Inki Kim , Sang Yeon Kim , Min Paek , Chiew Sin Ping , Wan Gie Lee , Choong Shiau Chien , Zadig Lam , Hitomi Watanabe , Naoto Inoue
IPC分类号： H01L21/336 , H01L21/8234 , H01L21/3205 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/823462 , H01L21/823481 , Y10S438/981
摘要： A method for making a semiconductor device having a first active region and a second active region includes providing first and second isolation structures defining the first active region on a substrate. The first active region uses a first operational voltage, and the second active region uses a second operational voltage that is different from the first voltage. A nitride layer overlying the first and second active regions is formed. An oxide layer overlying the nitride layer is formed. A first portion of the oxide layer overlying the first active region is removed to expose a first portion of the nitride layer. The exposed first portion of the nitride layer is removed using a wet etch method while leaving a second portion of the nitride layer that is overlying the second active region intact. Thereafter, a first gate oxide having a first thickness is formed on the first active region, the first gate oxide having a first edge facing the first isolation structure and a second edge facing the second isolation structure. The first edge is separated from the first isolation structure by a first distance. The second edge is separated from the second isolation structure by a second distance. Thereafter, a second gate oxide having a second thickness is formed on the second active region, the second thickness being different than the first thickness.
摘要翻译：制造具有第一有源区和第二有源区的半导体器件的方法包括提供在衬底上限定第一有源区的第一和第二隔离结构。第一有源区域使用第一工作电压，而第二有源区域使用不同于第一电压的第二工作电压。形成覆盖第一和第二有源区的氮化物层。形成覆盖氮化物层的氧化物层。去除覆盖在第一有源区上的氧化物层的第一部分以露出氮化物层的第一部分。使用湿蚀刻方法去除氮化物层的暴露的第一部分，同时留下覆盖第二有源区域的氮化物层的第二部分完好无损。此后，在第一有源区上形成具有第一厚度的第一栅极氧化物，第一栅极氧化物具有面对第一隔离结构的第一边缘和面向第二隔离结构的第二边缘。第一边缘与第一隔离结构隔开第一距离。第二边缘与第二隔离结构隔开第二距离。此后，在第二有源区上形成具有第二厚度的第二栅极氧化物，第二厚度不同于第一厚度。

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