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1. 发明专利

JPS5780638A Target of pickup tube 失效
标题翻译：抽吸管目标
公开(公告)号：JPS5780638A
公开(公告)日：1982-05-20
申请号：JP15708580
申请日：1980-11-10
申请人： Hitachi Ltd , Nippon Hoso Kyokai
发明人： NONAKA IKUMITSU , INOUE SHIGENORI , SHIDARA KEIICHI , UCHIDA TERUO
IPC分类号： H01J29/45 , H01L31/08
CPC分类号： H01J29/45
摘要： PURPOSE:To prevent deterioration of the characteristic of a pickup tube, by charging the density of As in the direction of film thickness, while keeping the set density of As of an Se-As photo conductive film as a peak value, after distributing the density of As of the Se-As photo conductive film touching an Se- As-Te photo conductive film with its specific quantity through a specific depth in the direction of film thickness. CONSTITUTION:A transparent electrode 2 (SnO2) and an N type trnsparent electrode 3 (CeO2) are formed on a base 1. Nexr, a P type photo conductive film 4 (Se: 90-97wt%, As: the remainder, T1: 30-60nm) and a P type photo conductive film 5 (Se: 64wt%, As : 3wt%, Te: remaineder, T2: 60-120nm) are formed. Then, a P type photo conductive film 7 composed of a portion 7(a) (T4: 10-30nm) in which the density of Se is kept in a specific value of 70-90wt% (the remainder: As) and a portion 7(b) (T5: 60-100nm) in which the density of se changes from a specific value to 97wt% is formed on the P type photo conductive film 5, and a P type photo conductive film 8 (Se: 97wt%, As: the remainder) is further formed. Thereby, the variation of the density distribution of As becomes small, and voltage-current characteristic is improved.
摘要翻译：目的：为了防止拾取管的特性劣化，通过在将膜的厚度方向充满As的密度，同时保持Se-As光导膜的As的设定浓度为峰值，在分配密度作为Se-As光导电膜的Se-As-Te光导电膜，其特定量通过膜厚方向上的特定深度接触。构成：在基底1上形成透明电极2（SnO 2）和N型透明电极3（CeO 2）。Nexr，P型光导膜4（Se：90-97wt％，As：余数T1： 30-60nm）和P型光导膜5（Se：64wt％，As：3wt％，Te：残留物，T2：60-120nm）。然后，将由Se的密度保持在70〜90重量％的特定值（余量：As）的部分7（a）（T4：10〜30nm）构成的P型光导膜7和在P型光电导膜5上形成有从特定值向97重量％变化的密度为7（b）（T5：60〜100nm）的P型光导膜8（Se：97重量％ As：其余部分）进一步形成。由此，As的密度分布的变化变小，电压 - 电流特性提高。

2. 发明授权

KR860000815B1 PHOTOCONDUCTIVE FILM 失效
公开(公告)号：KR860000815B1
公开(公告)日：1986-06-28
申请号：KR820002439
申请日：1982-05-28
申请人： HITACHI LTD
发明人： SHIDARA KEICHI , KUNIOKA KENKICHI , UCHIDA TERUO , KUSANO CHUSHIRO , TAKASAKI YUKIO , NONAKA YASUHIKO
IPC分类号： H01L31/0248 , H01J29/45 , H01L31/08
摘要： In order to reduce afterimage due to intensive light photoconductive film was made of amorphous material contg. selenium. The photoconductive layer consisted of mainly selenium and a little amount of tellurium along some part of the layer. At least one oxide or fluoride from II, III, VII gp. was arranged contiguously to tellurium along another width of the layer which could produce neg. elec. charge in selenium.

3. 发明授权

US3890525A Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer 失效
标题翻译：包含分级硒 - 碲层的图像拾取管的导光目标
公开(公告)号：US3890525A
公开(公告)日：1975-06-17
申请号：US37044673
申请日：1973-06-15
申请人： HITACHI LTD
发明人： HIRAI TADAAKI , MARUYAMA EIICHI , INAO KIYOHISA , YAMAMOTO HIDEAKI , GOTO NAOHIRO , ISOZAKI YUKINAO , SHIDARA KEIICHI , UCHIDA TERUO
IPC分类号： H01J29/45 , H01L31/00 , H01J31/38
CPC分类号： H01J29/456 , H01J9/233 , H01L31/00
摘要： A photoconductive target of an image pickup tube comprising a light-transmitting substrate, an N-type conductive layer deposited on the substrate and a P-type conductive layer making a rectifying contact with the N-type conductive layer, in which the P-type conductive layer includes at least selenium and tellurium, the composition of the P-type layer changes along the direction of the thickness of the layer, the average content of selenium in the P-type conductive layer is not less than 50 atomic percent, the content of tellurium at both surfaces of the P-type conductive layer is not more than 10 atomic percent, and the maximum tellurium content of 10 to 40 atomic percent is located on a plane in the P-type conductive layer nearer to the N-type conductive layer than the middle plane of the P-type conductive layer.
摘要翻译：包括透光基板，沉积在基板上的N型导电层和与N型导电层整流接触的P型导电层的图像拾取管的光电导靶，其中P型导电层至少包含硒和碲，P型层的组成沿着层的厚度方向发生变化，P型导电层中硒的平均含量不小于50原子％，含量在P型导电层的两面的碲的含量为10原子％以下，最大碲含量为10〜40原子％位于P型导体层的靠近N型导体的平面上层比P型导电层的中间平面。

4. 发明专利

DE3273528D1 PHOTOCONDUCTIVE FILM 未知
公开(公告)号：DE3273528D1
公开(公告)日：1986-11-06
申请号：DE3273528
申请日：1982-05-27
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： SHIDARA KEIICHI , TANIOKA KENKICHI , UCHIDA TERUO , KUSANO CHUSHIROU , TAKASAKI YUKIO , NONAKA YASUHIKO , INOUE EISUKE
IPC分类号： H01L31/0248 , H01J29/45 , H01L31/08 , H01J29/36
摘要： A photoconductive film comprises a photoconductive layer (3) which is mainly made of selenium and has a region (b) in the thickness direction containing tellurium. At least one of (i) a portion in a direction of hole flow of said region (b) and (ii) a portion in the hole flow direction of another region (c) which is located adjacent to said region (b) is doped with at least one member selected from oxides, fluorides and elements which belong to groups II, III and VII, which are capable of forming negative space charge in selenium, at a concentration in a range of 10 ppm to 1% by weight on an average. Typical examples of such dopants include CuO, In 2 O 3 , Se0 2 , V 2 0 5 , MoO 3 , WOa, GaF 2 , InF 3 , Zn, Ga, In, Cl, I and Br. The "after image" characteristic ascribable to incident light of high intensity can be significantly improved.

5. 发明专利

DE2333283A1 未知
公开(公告)号：DE2333283A1
公开(公告)日：1974-01-31
申请号：DE2333283
申请日：1973-06-29
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： SHIDARA KEIICHI , HIRAI TADAAKI , MARUYAMA EIICHI , INAO KIYOHISA , YAMAMOTO HIDEAKI , GOTO NAOHIRO , ISOZAKI YUKINAO , SHIDARA KEICHI , UCHIDA TERUO
IPC分类号： H01J29/45 , H01L31/00 , H01J29/36
摘要： A photoconductive target of an image pickup tube comprising a light-transmitting substrate, an N-type conductive layer deposited on the substrate and a P-type conductive layer making a rectifying contact with the N-type conductive layer, in which the P-type conductive layer includes at least selenium and tellurium, the composition of the P-type layer changes along the direction of the thickness of the layer, the average content of selenium in the P-type conductive layer is not less than 50 atomic percent, the content of tellurium at both surfaces of the P-type conductive layer is not more than 10 atomic percent, and the maximum tellurium content of 10 to 40 atomic percent is located on a plane in the P-type conductive layer nearer to the N-type conductive layer than the middle plane of the P-type conductive layer.

6. 发明专利

JPS57197876A PHOTOCONDUCTIVE FILM 失效
公开(公告)号：JPS57197876A
公开(公告)日：1982-12-04
申请号：JP8091481
申请日：1981-05-29
申请人： JAPAN BROADCASTING CORP , HITACHI LTD
发明人： SHIDARA KEIICHI , TANIOKA KENKICHI , UCHIDA TERUO , KUSANO CHIYUUSHIROU , TAKASAKI YUKIO , NONAKA IKUMITSU , INOUE SHIGENORI
IPC分类号： H01L31/0248 , H01J29/45 , H01L31/08
摘要： PURPOSE:To reduce the baking of a pickup tube target by making a substance forming negative space charge in Se contain into a region adjoining to a Te added region in a photoconductor layer, the principal ingredient thereof is Se. CONSTITUTION:A transparent conductive film, the principal ingredient thereof is SnO2, is formed onto a glass substrate, Se and As2Se3 are evaporated onto the conductive film as the first layer a' and As concentration is brought to 3%, SeAs2Se3 and Te are evaporated as the second layer b' and As concentration is brought to 2%. Te concentration is brought to 25-35%, and a layer consisting of Se, As, GaF3, etc. is evaporated as the third layer c'. In this case, As concentration is reduce to 3% from 20-25% while the concentration of GaF3, etc. forming the negative space charge in Se is brought to 10ppm through 1%, and the photoconductor layer is shaped. Accordingly, the effect of baking reduction to strong beams and baking generated after a static image is picked up for a long time can be reduced.

7. 发明专利

JPS522117A PHOTOCONDUCTIVE IMAGE PICKUP TUBE TARGET 失效
公开(公告)号：JPS522117A
公开(公告)日：1977-01-08
申请号：JP7114576
申请日：1976-06-18
申请人： JAPAN BROADCASTING CORP , HITACHI LTD
发明人： HIRAI TADAAKI , MARUYAMA EIICHI , INAO KIYOHISA , YAMAMOTO HIDEAKI , GOTOU TADAHIRO , ISOZAKI YUKINAO , SHIDARA KEIICHI , UCHIDA TERUO
IPC分类号： H01J29/45 , H01J31/38 , H01L31/00 , H01L31/08
摘要： PURPOSE:To provide a photoconductive image pickup tube target of simple fabricating step with less dark current with high sensitivity of red color.

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