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    • 1. 发明专利
    • Ball-grid-array type semiconductor device
    • 球形阵列型半导体器件
    • JP2003289122A
    • 2003-10-10
    • JP2003123531
    • 2003-04-28
    • Hitachi Ltd株式会社日立製作所
    • YAGUCHI AKIHIROHARUTA AKIRAICHITANI MASAHIROTANAKA TADAYOSHI
    • H01L23/12
    • H01L2224/48091H01L2224/73265H01L2924/00014
    • PROBLEM TO BE SOLVED: To realize a highly reliable BGA-type semiconductor device by suppressing the disconnection of conductive wiring and breakage of an external terminal. SOLUTION: Respective insulating films 3 covering respective lands 2b are separated from each other, and a dummy wiring 10 in addition to conductive wiring 2 connected to the lands 2 is projected from a side face 3b of the insulating film 3 covering the lands 2b. Thus, it is possible to increase the rate of wiring materials whose rigidity is large inside the insulating film 3, and to strengthen the constraint of the thermal deformation of the insulating film 3 itself by the dummy wiring 10. Also, it is possible to suppress the peeling of the side face 3b of the insulating film by the conductive wiring 2 and the dummy wiring 10, and to reduce the increase of the thermal deformation quantity of the insulating film 3 due to the generation of the peeling of the side face 3b. COPYRIGHT: (C)2004,JPO
    • 要解决的问题:通过抑制导电布线的断开和外部端子的断裂来实现高可靠性的BGA型半导体器件。 解决方案:覆盖相应焊盘2b的各绝缘膜3彼此分离,并且除了连接到焊盘2的导电布线2之外的虚设布线10从覆盖该焊盘的绝缘膜3的侧面3b突出 2b。 因此,能够提高绝缘膜3内部的刚性大的布线材料的使用率,并且通过虚设布线10来加强绝缘膜3本身的热变形的约束。另外,也可以抑制 通过导电布线2和虚拟布线10剥离绝缘膜的侧面3b,并且由于产生侧面3b的剥离而减少绝缘膜3的热变形量的增加。 版权所有(C)2004,JPO