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1. 发明专利

MY131415A SEMICONDUCTOR DEVICE 未知
公开(公告)号：MY131415A
公开(公告)日：2007-08-30
申请号：MYPI20021966
申请日：2002-05-29
申请人： HITACHI LTD
发明人： NAGATA TATSUYA , MIYAMOTO SEIJI , ANDO HIDEKO
IPC分类号： H01G4/228 , H01L23/498 , H01L23/12 , H05K1/02 , H05K1/11 , H05K3/46
摘要： THE INVENTION ELIMINATES A NEED TO INCREASE A SIZE OF A SEMICONDUCTOR DEVICE AND REDUCES OCCURRENCE OF NOISE. A SEMICONDUCTOR DEVICE OF THE INVENTION INCLUDES: A BASE (5) HAVING FRONT LAYERS (9, 11) PROVIDED ON RESPECTIVE SIDES OF A CORE LAYER (7) FORMED BY A PRINTED CIRCUIT BOARD, AND A SEMICONDUCTOR CHIP (1) MOUNTED ON THE BASE (5), WHEREIN THE SEMICONDUCTOR CHIP (1) IS JOINED TO ONE (9) OF THE FRONT LAYERS BY USING A JOINING MEMBER (3), AND THE OTHER FRONT LAYER (11) HAS A PLURALITY OF EXTERNAL TERMINALS (55)ARRANGED THEREON, AND THE CORE LAYER (7) HAS A PLURALITY OF THROUGH-HOLES (41, 43, 45, 75, 77) FORMED THEREIN TO ELECTRICALLY CONNECT THE SEMICONDUCTOR CHIP (1) TO THE PLURALITY OF EXTERNAL TERMINALS (55) TOGETHER, AND THE PLURALITY OF THROUGH-HOLES (41, 43, 45, 75, 77) INCLUDES A PLURALITY OF ARRAYED THROUGH-HOLES (41, 43, 45) ARRANGED CORRESPONDINGLY TO THE ARRANGEMENT OF THE PLURALITY OF EXTERNAL TERMINALS (55) AND ONE OR MORE ADDITIONAL THROUGH-HOLES (75, 77) FORMED BETWEEN THE PLURALITY OF ARRAYED THROUGH-HOLES (41, 43, 45).(FIG. 1)

2. 发明专利

DE69534483T2 未知
公开(公告)号：DE69534483T2
公开(公告)日：2006-07-06
申请号：DE69534483
申请日：1995-05-12
申请人： HITACHI LTD
发明人： TANAKA NAOTAKA , YAGUCHI AKIHIRO , KITANO MAKOTO , NAGATA TATSUYA , KUMAZAWA TETSUO , NAKAMURA ATSUSHI , SUZUKI HIROMICHI , TSUGANE MASAYOSHI
IPC分类号： H01L23/498 , H01L21/48 , H01L21/56 , H01L23/31 , H01L23/495
摘要： A lead frame for use with a plastic encapsulated semiconductor device includes a tab (4) on which the semiconductor chip (9) is mounted, chip pad supporting leads (5), inner leads (2a) to be electrically coupled with the semiconductor chip, outer leads (2b) formed in a monoblock structure together with the inner leads, and a frame (1) for supporting the chip pad supporting leads and outer leads. In the lead frame, there is disposed a dam member (3) only between the outer leads. Alternatively, dummy outer leads are formed between the frame and leads adjacent thereto so as to connect the dummy leads to the outer leads by the dam member. The frame is removed after the semiconductor device is assembled.

3. 发明专利

IN191568B Semiconductor device and method of manufacturing the same 未知
公开(公告)号：IN191568B
公开(公告)日：2003-12-06
申请号：IN1139CA1996
申请日：1996-06-28
申请人： HITACHI LTD
发明人： YAGUCHI MAKUTO , KITANO MAKUTO , NAGATA TATSUYA , KUMAZAWA TETSUO , HARUTA RYO , ICHITANI MASAHIRO
IPC分类号： H01L21/56 , H01L23/31 , H01L23/495 , H05K3/34 , H01L21/20
摘要： A semiconductor device comprises a semiconductor element (1) having a plane (1a) with a plurality of electrodes (2) formed thereon, a plurality of internal leads (3; 20) electrically connected to the electrodes (2) respectively, and an electrically insulating resin package (11) for sealing the semiconductor element (1) and the internal leads (3; 20), wherein the internal leads (3; 20) are substantially located in the range of the electrode formed plane (1a) and the resin package (11) has a plurality of external terminal receiving recesses (17) reaching the internal leads (3; 20) respectively in the range of said electrode formed plane (1a). The external terminal receiving recesses (17) is formed by a resin plate (8) having through-holes and integrally molded with the resin package (11). The resin plate (8) may have recesses (18) and film members (19) forming the bottom of said recesses (18) and to be broken after integrally molded with the resin package (11).

4. 发明专利

DE69534483D1 未知
公开(公告)号：DE69534483D1
公开(公告)日：2006-02-09
申请号：DE69534483
申请日：1995-05-12
申请人： HITACHI LTD
发明人： TANAKA NAOTAKA , YAGUCHI AKIHIRO , KITANO MAKOTO , NAGATA TATSUYA , KUMAZAWA TETSUO , NAKAMURA ATSUSHI , SUZUKI HIROMICHI , TSUGANE MASAYOSHI
IPC分类号： H01L21/48 , H01L21/56 , H01L23/31 , H01L23/495 , H01L23/498
摘要： A lead frame for use with a plastic encapsulated semiconductor device includes a tab (4) on which the semiconductor chip (9) is mounted, chip pad supporting leads (5), inner leads (2a) to be electrically coupled with the semiconductor chip, outer leads (2b) formed in a monoblock structure together with the inner leads, and a frame (1) for supporting the chip pad supporting leads and outer leads. In the lead frame, there is disposed a dam member (3) only between the outer leads. Alternatively, dummy outer leads are formed between the frame and leads adjacent thereto so as to connect the dummy leads to the outer leads by the dam member. The frame is removed after the semiconductor device is assembled.

5. 发明公开

EP2289419A4 ULTRASONIC PROBE, METHOD FOR MANUFACTURING THE SAME AND ULTRASONIC DIAGNOSTIC DEVICE 审中-公开
标题翻译： ULTRASCHALLSONDE，VERFAHREN ZUR IHRER HERSTELLUNG UNDULTRASCHALLDIAGNOSEGERÄT
公开(公告)号：EP2289419A4
公开(公告)日：2017-03-29
申请号：EP09746606
申请日：2009-05-13
申请人： HITACHI LTD
发明人： SANO SHUZO , YOSHIMURA YASUHIRO , NAGATA TATSUYA , FUKADA MAKOTO , SAKO AKIFUMI
IPC分类号： A61B8/00 , H04R19/00 , H04R31/00
CPC分类号： B06B1/0292 , A61B8/06 , A61B8/13 , A61B8/4455 , G01N29/2406 , Y10T29/49005
摘要： An ultrasonic probe is provided with a CMUT chip having a plurality of transducer elements that change electromechanical coupling coefficients or sensitivities in accordance with a bias voltage to transmit and receive ultrasonic waves, an electric conducting layer formed on the ultrasonic irradiation side of the CMUT chip, an acoustic lens arranged on the ultrasonic irradiation side of the CMUT chip, an insulating layer formed in the direction opposite to the ultrasonic irradiation side of the acoustic lens, a housing unit that stores the CMUT chip in which the electric conducting layer and the insulating layer are fixed with an adhesive and the acoustic lens, wherein the insulating layer is formed by the material that includes at least either silicon oxide or paraxylene to prevent a solvent of the adhesive from soaking into the adhered portion.
摘要翻译：超声波探头设置有具有多个换能器元件的CMUT芯片，该多个换能器元件根据用于发送和接收超声波的偏置电压来改变机电耦合系数或灵敏度，形成在CMUT芯片的超声照射侧上的导电层，布置在CMUT芯片的超声波照射侧的声透镜，与声透镜的超声波照射侧相反的方向形成的绝缘层，存储CMUT芯片的壳体单元，其中导电层和绝缘层用粘合剂和声透镜固定，其中绝缘层由包括至少一种氧化硅或对二甲苯的材料形成，以防止粘合剂的溶剂浸入粘附部分。

6. 发明公开

EP2608573A4 ULTRASOUND PROBE AND ULTRASOUND DIAGNOSTIC DEVICE USING SAME 审中-公开
标题翻译：超音波探头与超声波诊断装置
公开(公告)号：EP2608573A4
公开(公告)日：2016-11-30
申请号：EP11818259
申请日：2011-08-19
申请人： HITACHI LTD
发明人： YOSHIMURA YASUHIRO , NAGATA TATSUYA , SAKO AKIFUMI
IPC分类号： H04R19/00 , A61B8/00
CPC分类号： A61B8/4494 , A61B8/0883 , A61B8/0891 , A61B8/14 , A61B8/4444 , B06B1/0292 , G01N29/2456 , G10K11/002

7. 发明专利

JP2007201753A Ultrasonic probe 有权
标题翻译：超声探头
公开(公告)号：JP2007201753A
公开(公告)日：2007-08-09
申请号：JP2006017137
申请日：2006-01-26
申请人： Hitachi Ltd , Hitachi Medical Corp , 株式会社日立メディコ , 株式会社日立製作所
发明人： AONO TAKANORI , NAGATA TATSUYA , ASAFUSA KATSUNORI , KOBAYASHI TAKASHI , ISADA NAOYA
IPC分类号： H04R17/00 , A61B8/00 , G01N29/24 , H04R1/34
CPC分类号： G10K11/002 , A61B8/00
摘要： PROBLEM TO BE SOLVED: To provide a ultrasonic probe which prevents damage to a silicon substrate due to temperature variation while reducing noise due reflected waves and is excellent in transmission/reception performance and structure reliability.
SOLUTION: The ultrasonic probe 2 is equipped with: a first substrate 20 having the silicon substrate 21 and a ultrasonic transmitting/receiving element 3; an acoustic lens 11 installed on the upper surface of the first substrate 20; a damping layer 41 installed beneath the first substrate 20; and a second substrate 31 installed between the lower surface of the first substrate 20 and the upper surface of the damping layer 41. The second substrate 31 is formed from material having a coefficient of linear expansion and acoustic impedance which are approximately the same as those of the silicon substrate 21 of the first substrate 20.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种超声波探头，其防止由于温度变化而损坏硅基板，同时降低反射波的噪声，并且发送/接收性能和结构可靠性优异。
解决方案：超声波探头2配备有：具有硅基板21和超声波发送/接收元件3的第一基板20; 安装在第一基板20的上表面上的声透镜11; 设置在第一基板20下方的阻尼层41; 以及安装在第一基板20的下表面和阻尼层41的上表面之间的第二基板31.第二基板31由具有与线性膨胀和声阻抗系数大致相同的线性膨胀和声阻抗系数的材料形成第一衬底20的硅衬底21。版权所有：（C）2007，JPO＆INPIT

8. 发明专利

JP2007074263A Ultrasonic transducer and manufacturing method therefor 有权
标题翻译：超声波传感器及其制造方法
公开(公告)号：JP2007074263A
公开(公告)日：2007-03-22
申请号：JP2005258117
申请日：2005-09-06
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MACHIDA SHUNTARO , ENOMOTO HIROYUKI , TADAKI YOSHITAKA , NAGATA TATSUYA
IPC分类号： H04R17/00
CPC分类号： B06B1/0292
摘要： PROBLEM TO BE SOLVED: To provide a structure in which charges are hardly to be injected into an insulating film, even when a lower face of membrane touches lower electrode without having to use wafer lamination technology, and to provide its manufacturing method. SOLUTION: The ultrasonic transducer includes a lower electrode 1502, a hollow layer 1504 formed on the lower electrode 1502, an insulating film 1505 formed for covering the hollow layer 1504, and an upper electrode 1507 formed on the insulating film 1505. The hollow layer 1504 has a projection 1506 of the insulating film 1505, which projects to the hollow layer 1504. The upper electrode 1507 has an opening 1513. The upper electrode 1507 with formed opening 1513 and the projection 1506 of the insulating film 1505 are located at positions which are not overlapped with each other with a view from the upper plane. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：即使当膜的下表面接触下电极而不必使用晶片叠层技术时，提供几乎不将电荷注入绝缘膜的结构，并提供其制造方法。解决方案：超声波换能器包括下电极1502，形成在下电极1502上的中空层1504，形成为覆盖中空层1504的绝缘膜1505和形成在绝缘膜1505上的上电极1507。中空层1504具有突出到中空层1504的绝缘膜1505的突起1506.上电极1507具有开口1513.具有开口1513的上电极1507和绝缘膜1505的突起1506位于从上平面看不会彼此重叠的位置。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2007074045A Electroacoustic transducing element 有权
标题翻译：电动传动元件
公开(公告)号：JP2007074045A
公开(公告)日：2007-03-22
申请号：JP2005255817
申请日：2005-09-05
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： AZUMA TAKASHI , UMEMURA SHINICHIRO , NAGATA TATSUYA , FUKUDA HIROSHI , MACHIDA SHUNTARO , MINE TOSHIYUKI
IPC分类号： H04R19/00
CPC分类号： B06B1/0292 , H04R19/005
摘要： PROBLEM TO BE SOLVED: To provide an electroacoustic transducing element for preventing reduction in the azimuth resolution of an image or a dynamic range by suppressing a drift of the element characteristic so as to suppress deterioration in a transmission/reception ultrasonic wave beam.
SOLUTION: The electroacoustic transducing element includes: a first electrode formed on a substrate; a thin film provided on the substrate and whose base material is silicon or silicon compound; a second electrode formed on the thin film; an air gap layer provided between the first and second electrodes; an electric charge storage layer for storing electric charges given from the electrodes and provided between the first and second electrodes; and a source electrode and a drain electrode for measuring the electric charge amount stored in the electric charge layer.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：解决问题：提供一种电声转换元件，用于通过抑制元件特性的漂移来防止图像的方位分辨率或动态范围的降低，从而抑制发送/接收超声波束的劣化。电解转换元件包括：形成在基板上的第一电极; 设置在基板上的基材为硅或硅化合物的薄膜; 形成在薄膜上的第二电极; 设置在所述第一和第二电极之间的气隙层; 电荷存储层，用于存储从电极提供的并且设置在第一和第二电极之间的电荷; 以及用于测量存储在电荷层中的电荷量的源电极和漏电极。版权所有（C）2007，JPO＆INPIT

10. 发明专利

JP2006352808A ELECTRIC/ACOUSTIC TRANSDUCING ELEMENT, ARRAY TYPE ULTRASONIC TRANSDUCER AND ULTRASONIC DIAGNOSTIC DEVICE 审中-公开
公开(公告)号：JP2006352808A
公开(公告)日：2006-12-28
申请号：JP2005179959
申请日：2005-06-20
申请人： HITACHI LTD
发明人： UMEMURA SHINICHIRO , AZUMA TAKASHI , NAGATA TATSUYA , FUKUDA HIROSHI , MINE TOSHIYUKI , MACHIDA SHUNTARO
IPC分类号： H04R19/00 , A61B8/00
摘要： PROBLEM TO BE SOLVED: To stabilize electric/acoustic transduction property of a diaphragm type electric/acoustic transducing element and to reduce a noise level of an ultrasonic diagnostic device constituted using the electric/acoustic transducing element. SOLUTION: An electric/acoustic transducing element 9 is constructed from a capacitor cell 8 comprised of a lower electrode 2 formed on a silicon substrate 1 and an upper electrode 6 formed on an upper portion of the lower electrode with a cavity 4 in between, and an electrode short-circuiting preventive film 5 formed in the upper electrode 6 at the side of the cavity 4 is formed from a material of which the electric time constant becomes shorter than 1 sec and longer than 10 micro-sec such as silicon nitride containing silicon excessively in stoichiometry. As a result, the electrode short-circuiting preventive film 6 is going to have weak conductivity, thereby preventing the electrode short-circuiting preventive film 5 from being charged or drifted. As a result, electric/acoustic transduction property of the electric/acoustic transducing element 9 is stabilized and further, an acoustic noise level of the ultrasonic diagnostic device is reduced. COPYRIGHT: (C)2007,JPO&INPIT

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