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    • 4. 发明专利
    • Apparatus for mixing gas
    • 混合气体装置
    • JP2008049306A
    • 2008-03-06
    • JP2006229996
    • 2006-08-28
    • Hitachi Ltd株式会社日立製作所
    • MATSUMOTO TAKEHIROSATO MASAYUKIKOWATARI TAKEHIKO
    • B01F5/00B01F3/02F01N3/08
    • PROBLEM TO BE SOLVED: To solve such a problem that the size of a system becomes larger or the output of the system is decreased since a main conduit of a long section is required or several devices are arranged in the main conduit to cause a pressure loss in a fluid when two fluids are mixed almost uniformly with each other.
      SOLUTION: An auxiliary conduit is arranged through which an additional gas is made to pass and an outlet of the auxiliary conduit is arranged to be opened to the vicinity of the center of the main conduit through which a main gas is made to pass. A plate for dispersing the additional gas in the radial direction or a frustum-like structure, the cross-sectional area of which is made larger as the cross section near the auxiliary conduit is parted from the auxiliary conduit, is arranged in the vicinity of the center of the main conduit just after the outlet of the auxiliary conduit. A whirling member having a plurality of stator blades or rotor blades for forming a whirling flow in a current of the main gas is arranged for promoting the mixing of the additional gas with the main gas.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了解决由于需要长段的主管道或者在主管道中布置多个设备而导致系统尺寸变大或者系统的输出减小的问题,导致 当两种流体彼此几乎均匀地混合时,流体中的压力损失。

      解决方案:配置辅助导管,附加气体通过该辅助导管通过,并且辅助导管的出口被布置成向主导管的中心附近开放,主气体通过该导管通过 。 用于将附加气体分散在径向方向上的板或平截头体状结构,当辅助导管附近的横截面与辅助导管分离时,截面积更大的横截面积被设置在 主导管的中心位于辅助导管出口之后。 布置有用于在主气体的电流中形成旋转流的多个定子叶片或转子叶片的旋转构件,用于促进附加气体与主气体的混合。 版权所有(C)2008,JPO&INPIT

    • 5. 发明专利
    • Test method for semiconductor integrated circuit and transaction method
    • 半导体集成电路和交易方法的测试方法
    • JP2003270305A
    • 2003-09-25
    • JP2002073962
    • 2002-03-18
    • Hitachi LtdHitachi Ulsi Systems Co Ltd株式会社日立製作所株式会社日立超エル・エス・アイ・システムズ
    • SATO MASAYUKIOGAWA KATSUMI
    • G01R31/317G06Q50/00G06Q50/04G06F17/60
    • Y02P90/30
    • PROBLEM TO BE SOLVED: To provide a test method allowing an efficient and low-cost testing of a semiconductor device by selecting the most suitable tester among a plurality of testers with different architectures, and allowing easy correction of a test program, thus reducing a total development period. SOLUTION: The test program is prepared using a statement-type or operation-description-type language not regulated by the architecture of the tester as a common tester language. For each description of the test program, whether executable or not is judged with a plurality of testers prepared in advance. Based on the judgment results, the tester with the lowest testing cost is selected among ones capable of executing every description. The test is performed with the selected tester by converting the test program into a program executable by that tester. COPYRIGHT: (C)2003,JPO
    • 要解决的问题:为了提供一种测试方法,通过在具有不同体系结构的多个测试器中选择最合适的测试器,并且允许容易地校正测试程序,从而对半导体器件进行有效且低成本的测试,因此 减少总体发展时期。

      解决方案:测试程序是使用语言类型或操作描述类型语言编写的,该语言不受测试器体系结构的限制,作为常见的测试语言。 对于测试程序的每个描述,是否可以使用预先准备的多个测试器来判断是否可执行。 根据判断结果,选择能够执行每个描述的测试人员的测试成本最低。 通过将测试程序转换成可由该测试人员执行的程序,通过选定的测试仪进行测试。 版权所有(C)2003,JPO

    • 9. 发明专利
    • SEMICONDUCTOR DEVICE AND ITS MANUFACTURE
    • JPH11354576A
    • 1999-12-24
    • JP16160998
    • 1998-06-10
    • HITACHI LTD
    • SAITO TOSHIOSATO MASAYUKIISHIDA TAKASHI
    • H01L21/60H01L21/603
    • PROBLEM TO BE SOLVED: To set a connection part to be thin, to reduce cost and to improve connection reliability, in a semiconductor device executing flip chip connection. SOLUTION: Chip side gold electrode layers 2a arranged by connecting them to the pads 1a of a semiconductor chip 1, a chip supporting substrate 3 where substrate side gold electrode layers 2b are formed, Au-Si adhesion layers 2c, which are arranged between the chip side gold electrode layers 2a on the semiconductor chip 1 and the substrate side gold electrode layers 2b on the chip supporting substrate 3, and execute Au-Si eutectic junction with the chip side gold electrode layers 2a and the substrate side gold electrode layers 2b at the time of executing flip chip connection, a sealing part sealing the semiconductor chip 1 and the connection part 2 and a plurality of pin members 5, are installed. The chip side gold electrode layers 2a, the substrate side gold electrode layer 2b and the Au-Si adhesion layers 2c between them are arranged. Thus, flip chip connection is executed by low temperature heat press contact.