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    • 2. 发明专利
    • Magnetic head manufacturing method, polishing tool for manufacture, and polishing tool manufacturing method
    • 磁头制造方法,制造抛光工具和抛光工具制造方法
    • JP2005028470A
    • 2005-02-03
    • JP2003193798
    • 2003-07-08
    • Hitachi Ltd株式会社日立製作所
    • CHIBA HIROSHISASAKI SHINJIINABA HIROSHIISONO CHIHIRO
    • B24B37/12B24B37/14G11B5/31B24B37/04
    • PROBLEM TO BE SOLVED: To satisfy characteristics required of a magnetic element part while obtaining a smooth levitation surface by reducing machining step difference on the levitation surface side in machining a magnetic head. SOLUTION: A surface table 30 for polishing a magnetic head levitation surface is provided with hard projecting parts 32 on the surface of an elastic support plate 31 formed of tin or its alloy, and the tip parts of the hard projecting parts 32 are formed as cutting edge parts 33 for polishing a workpiece (a raw bar of the magnetic head) 35. Insulating films formed of SiO 2 or the like are formed at portions excluding the hard projecting parts 32 on the surface of the elastic support plate 31. The density of the hard projecting parts 32 is set to at least 10 per μm 2 , and the cutting edge part 33 of each hard projecting part 32 is within the nearly same plane with a height within a range of 20 nm or less from the surface of the elastic support plate 31 or the surface of the insulating film 34. The levitation surface of the magnetic head is thereby finish-machined with high accuracy by polishing the workpiece 35. COPYRIGHT: (C)2005,JPO&NCIPI
    • 要解决的问题:为了满足磁性元件部分所需的特性,同时通过减少在磁头加工中的悬浮表面侧上的加工阶差,同时获得平滑悬浮表面。 解决方案:用于抛光磁头悬浮表面的表台30在由锡或其合金形成的弹性支撑板31的表面上设置有硬突出部分32,并且硬突出部分32的尖端部分 形成为用于研磨工件(磁头的原料棒)的切削刃部33。35.由表面上的硬突出部32以外的部分形成由SiO 2 等形成的绝缘膜 弹性支撑板31的密度。硬突出部32的密度设定为每μm 2 至少10,并且每个硬突出部32的切割边缘部33在几乎相同的平面内 高度在距离弹性支撑板31的表面或绝缘膜34的表面20nm以下的范围内。因此,通过对工件35进行研磨,磁头的悬浮表面被高精度地精加工。 版权所有(C)2005,JPO&NCIPI
    • 5. 发明专利
    • Manufacturing method for polishing tool
    • 抛光工具的制造方法
    • JP2007253308A
    • 2007-10-04
    • JP2006084464
    • 2006-03-27
    • Hitachi Ltd株式会社日立製作所
    • CHIBA HIROSHIINABA HIROSHISASAKI SHINJIYASUI HIROTOYO KIYOKUTO
    • B24D3/00
    • PROBLEM TO BE SOLVED: To obtain a smooth polished surface in processing of an electronic device formed by various materials having different hardnesses, and to satisfy a specific characteristic required by the device.
      SOLUTION: A polishing tool is manufactured through a substrate polishing process for smoothing the surface of a substrate, the process for forming a polishing grain layer used for polishing the surface of the electronic device on the substrate, and a surface processing process for making polishing grains project on the surface of the polishing grain layer. Thus, a smooth polishing of the device can be obtained so that the surface of the polishing tool and a polished section of the device are brought into contact with each other and slid with each other.
      COPYRIGHT: (C)2008,JPO&INPIT
    • 要解决的问题:为了在由具有不同硬度的各种材料形成的电子装置的加工中获得光滑的抛光表面,并且满足该装置所需的特定特性。 解决方案:通过用于平滑基板的表面的基板抛光工艺制造抛光工具,用于形成用于抛光基板上的电子器件的表面的抛光晶粒层的工艺,以及用于 使抛光颗粒在抛光颗粒层的表面上突出。 因此,可以获得装置的平滑抛光,使得抛光工具的表面和装置的抛光部分彼此接触并相互滑动。 版权所有(C)2008,JPO&INPIT
    • 6. 发明专利
    • Grinding surface plate and its manufacturing method
    • 研磨面板及其制造方法
    • JP2007152545A
    • 2007-06-21
    • JP2006258237
    • 2006-09-25
    • Hitachi Ltd株式会社日立製作所
    • SASAKI SHINJIINABA HIROSHICHIBA HIROSHIYO KIYOKUTOYASUI HIROTO
    • B24D3/00
    • B24D18/0054B24B37/12
    • PROBLEM TO BE SOLVED: To reduce surface roughness occurring on a grinding portion, and thereby to reduce damage caused by machining and to improve grinding efficiency.
      SOLUTION: Abrasive grains are pushed and fixed on the surface of the grinding surface plate with mechanical pressure, and then the surface of the grinding surface plate containing the abrasive grains is subjected to plasma treatment, thereby improving the adhesiveness between the abrasive grains and the surface plate, and reducing the number of rolling particles separating from the surface of the surface plate, so as to realize flat abrasive machining of the device surface consisting of a plurality of materials.
      COPYRIGHT: (C)2007,JPO&INPIT
    • 要解决的问题:为了减少在研磨部分上发生的表面粗糙度,从而减少由机械加工引起的损坏并提高研磨效率。 解决方案:磨料颗粒以机械压力推压固定在研磨面板的表面上,然后对包含磨粒的研磨面板的表面进行等离子体处理,从而提高磨粒之间的粘附性 和表面板,并且减少从表面板的表面分离的滚动颗粒的数量,以实现由多种材料组成的装置表面的平面磨料加工。 版权所有(C)2007,JPO&INPIT
    • 8. 发明公开
    • Apparatus for plasma-processing a disk substrate and method of manufacturing a magnetic disk
    • 用于制造磁盘用于磁盘基片的等离子体处理和方法的装置
    • EP0730266A3
    • 1998-07-01
    • EP95105143
    • 1995-04-05
    • HITACHI LTD
    • KOKAKU YUICHIINABA HIROSHISASAKI SHINJIKATAOKA HIROYUKIHONDA YOSHINORITERAKADO MASATOMOFURUSAWA KENJI
    • C30B29/04C23C16/26C23C16/27C23C16/44C23C16/458C23C16/50C23C16/509C23C16/54G11B5/66G11B5/73G11B5/84
    • H01J37/32082C23C16/26C23C16/4404C23C16/4412C23C16/4587C23C16/509C23C16/54G11B5/8404H01J37/32541
    • A continuous electrode (5) entirely held at substantially the same potential is disposed in a plasma processing chamber (4) to define the inner wall thereof. A disk substrate (1) is placed in the electrode, and a plasma is generated around the disk substrate in a uniform state. A cross-sectional area of the plasma extending over the upper and lower surfaces of the disk substrate is made larger than a combined area of the disk substrate and its holder (2). The plasma uniformly surrounds the outer periphery and a central hole of the disk substrate. Further, a gas exhaust system (10, 32, 33, 331) for exhausting a reactive gas from the plasma processing chamber is made up of a main exhaust path (10) and a bypass exhaust path (33) such that the bypass exhaust path is used to exhaust the reactive gas at a stroke from the plasma processing chamber after plasma processing has been performed on the disk substrate, thus reducing a time required to exhaust the reactive gas. This structure enables a diamond-like carbon (DLC) protective film (36) to be uniformly formed on both surfaces of the disk substrate while improving the productivity of magnetic disk substrates.
    • 的连续电极(5)在基本相同的电位完全保持在等离子体处理室(4)被布置成限定其内壁。 一种磁盘基片(1)以均匀的状态被放置在电极上,并产生等离子体周围的盘基片。 等离子体延伸过盘基片的上表面和下表面的截面积比所述盘基片的组合面积和其保持件变得更大(2)。 等离子体均匀包围外周边和所述盘基片的中心孔。 此外,排气系统(10,32,33,331),用于从该等离子体处理室排出的反应气体由主排气路径(10)和旁通排气通路(33)的检测所做的旁通排气通路 用于在从所述等离子体处理室的行程以排出反应气体后等离子体处理已被执行的盘基片,从而减少以排出反应气体所需的时间。 该结构使得类金刚石碳(DLC)保护膜(36),以均匀地形成在盘基片的两个表面上,同时提高磁盘用基板的生产率。
    • 9. 发明专利
    • DISK DRIVE ASSEMBLY USING MAGNETIC HEAD
    • JP2000187806A
    • 2000-07-04
    • JP36212798
    • 1998-12-21
    • HITACHI LTD
    • INABA HIROSHITASAKA KENJI
    • G11B5/60G11B5/255
    • PROBLEM TO BE SOLVED: To reduce the unevenness of lubricant film thickness due to contact with a magnetic disk surface which occurs more frequently because of the reduction of the flying height of a magnetic head and to enable replenishment of a lubricant lost by scattering due to the rotary motion of a magnetic disk. SOLUTION: At least one hole is formed in a head slider penetrating from the surface facing a magnetic medium to the back part, a lubricant supply source is provided at the slider back part, and the lubricant 9 is supplied to the surface of the slider facing the magnetic medium through the through hole 1. The amount of the lubricant which flows out toward the surface facing the magnetic disk is determined by the diameter of the through hole 1. The diameter of the through hole 1 is properly selected by calculating the amount of outflow per unit time and unit area from the pressure difference between the negative pressure produced directly below the magnetic head by the rotation of the magnetic disk and the atmospheric pressure above the magnetic head.
    • 10. 发明专利
    • PLANAR SILICON HEAD AND ITS MANUFACTURE
    • JPH10241116A
    • 1998-09-11
    • JP3882097
    • 1997-02-24
    • HITACHI LTD
    • INABA HIROSHITASAKA KENJIAZUMA KAZUFUMI
    • G11B5/31G11B21/21
    • PROBLEM TO BE SOLVED: To form a planar silicon head slider surface having excellent resistance to sliding by separating out island-shaped diamond on a silicon wafer and a Permalloy interface, and then dissolving and removing a silicon substrate in planar silicon head forming process to expose the island-shaped diamond crystallite. SOLUTION: A silicon wafer 4, where Permalloy 3 composed of Ni-Fe alloy is formed beforehand, is introduced on an electrode, and methane is introduced for generating plasma. At this point, a part where lamination of diamond carbon film is not needed is treated by resists 10, and removed afterward. An upper magnetic layer 5, coils 6, etc., are formed sequentially, and finally unnecessary silicon wafer part 7 opposed to the Permalloy 3 is dissolved and removed. And island-shaped discontinuous thin film having diamond construction with protrusion height of 10-3000Å is formed on the Permalloy 3 surface. Afterward, an alumina layer is formed by a sputtering, and diamond-shaped carbon film 2 is formed on a slider uppermost surface.